JPS60117789A - Semiconductor element package - Google Patents
Semiconductor element packageInfo
- Publication number
- JPS60117789A JPS60117789A JP22582283A JP22582283A JPS60117789A JP S60117789 A JPS60117789 A JP S60117789A JP 22582283 A JP22582283 A JP 22582283A JP 22582283 A JP22582283 A JP 22582283A JP S60117789 A JPS60117789 A JP S60117789A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- groove
- base
- stem base
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は半導体素子容器の改良に関するものである。[Detailed description of the invention] The present invention relates to improvements in semiconductor device containers.
光ビームを利用する半導体レーザ等で、はめ合い実装方
式に使用される半導体素子容器としては。As a semiconductor element container used in the fitting mounting method for semiconductor lasers etc. that utilize light beams.
肉厚の円盤状をなすステムベースの一面に半導体素子を
載置し、該素子を囲むように該ベース径よシ小さなフラ
ンジ直径を有する缶状キャップを気密封着して成る半導
体素子容器が多く用いられる。Many semiconductor device containers are made by placing a semiconductor device on one side of a thick disk-shaped stem base, and hermetically sealing the device with a can-shaped cap having a flange diameter smaller than the base diameter. used.
この容器は、該キャップのフランジ外周よυ外側に広が
るベース面および該ベースの外周ｌｆ＋ｉが実装の位置
決りの基準となるので特じこの部分の変形や異物付層は
好ましくない。キャップの気密封着には融着や電気溶接
が用いらｔするが、この際に、ロウ材の流れ出しや溶接
の溶解物の流れ出しがキャップの外周より外側のペース
面上に延びると実装位１耐決めの障害となる。In this container, since the base surface extending υ outward from the flange outer circumference of the cap and the outer circumference lf+i of the base serve as a reference for mounting positioning, it is particularly undesirable for deformation or foreign matter to occur in this part. Fusion or electric welding is used to hermetically seal the cap, but in this case, if the flow of brazing metal or melted material from welding extends beyond the outer circumference of the cap onto the pace surface, the mounting position 1 It becomes an obstacle to endurance.
第１図は従来の半導体レーザ容器の一例を示す断面図で
ある。厚さ１．５鶴および礎径９１ｎ１４の肉厚の円盤
状を成すステムベースｌの上面に、突起状のマウント部
２がステムベース１と一体成形されている。マウント部
２には、ヒートシンク３を介してレーザペレット４が接
着されている。レーザペレット４の背面の電極からはボ
ンディング線５によっ−Ｃ封ＭＩＪ−ドロへ一方の電気
的接続がなされ、レーザペレット４の接着面の電極かや
はヒートシンク３．マウント部２およびステムベース１
を弁して溶接リード７へ他方の軍、気的接続がなされる
。ステムベース１の上面にはフランジ直径７朋および肉
厚０２順の缶状のキャップ８が融着または霜、気溶接に
よって気密封着されており、該キャップ８の上面にはガ
ラス窓９が設ｖｆりれてレーザ光紫堆シ出せるようにな
っている。この第１図の例では、ステムベース１の上面
はチャツプ８０ノランジ部よシ外側において平面を成し
ているため、融着金属や溶接の醒解物などの流才し出し
１０がこの平面上に沿って外へ延び易く、キャップフラ
ンジ外周から０５朋も外へはみ出すことがある。FIG. 1 is a sectional view showing an example of a conventional semiconductor laser container. A protruding mount portion 2 is integrally molded with the stem base 1 on the upper surface of the stem base l, which has a thick disk shape with a thickness of 1.5 mm and a base diameter of 91 mm. A laser pellet 4 is bonded to the mount portion 2 via a heat sink 3. An electrical connection is made from the electrode on the back side of the laser pellet 4 to the -C-sealed MIJ-doro by a bonding wire 5, and the electrode on the adhesive surface of the laser pellet 4 is connected to the heat sink 3. Mount part 2 and stem base 1
The other side is electrically connected to the welding lead 7 through the valve. A can-shaped cap 8 with a flange diameter of 7 and a wall thickness of 02 is hermetically sealed to the upper surface of the stem base 1 by fusion, frost, or air welding, and a glass window 9 is provided on the upper surface of the cap 8. The vf is turned off and the laser beam can be emitted. In the example shown in FIG. 1, the upper surface of the stem base 1 forms a flat surface on the outside of the chutpu 80, so that the spilled metal 10, such as fused metal and welding melt, is placed on this flat surface. It tends to extend outward along the outer periphery of the cap flange, and may even protrude outward from the outer periphery of the cap flange.
このように従来の半導体レーザ容器は、実装位置決めの
障害となる異物が基準面に存在するという問題があった
。As described above, the conventional semiconductor laser container has a problem in that foreign matter is present on the reference surface, which becomes an obstacle to mounting positioning.
本発明は、この問題点を解決するためになされたもので
あって、ベース面上に、キャップフランジの外周に沿っ
て該キャップを取り囲む環状の溝が形成されており、該
ｔｔｖ ＭにおいＣ前述の流れ出しがベース面上全進行
するのを阻止することによって実装位置決めの障害を未
然に防止するものである。The present invention has been made to solve this problem, and an annular groove surrounding the cap is formed along the outer periphery of the cap flange on the base surface. By preventing the outflow from proceeding completely on the base surface, problems in mounting positioning can be prevented.
以下図面に従ってその具体的効果ケ説明しよう。The specific effects will be explained below according to the drawings.
第２図Ｖよ本発明の一実施例ケ示す断面図でるる。FIG. 2V is a sectional view showing one embodiment of the present invention.
第１図と異る点を特に説明する。なお第１図と同一部品
はそのまま同一番号で示してわゐ。ステムベース１１の
上面にはキャップ８の外周に沿って該キャップ８金取９
囲む幅０，２朋および深さ０，２朋の環状の溝２１が設
けられておシ、流れ出し２０は該溝２ｉ１Ｃよって阻止
さ７’Ｌるためステムベース面上を溝幅以上に外へ延び
ることがなく、実装位置決めの障害となることを未然に
防止することができる。清の形成は、ステムベース成形
後に機械加工又は打刻等の方法により追加工する仁とも
できるし、ステムベース成形時に同時にプレス成形で作
り込む仁ともできる。溝の幅および深さはキャップの肉
厚と同程度以下で充分効果がある。Points that are different from FIG. 1 will be explained in particular. The same parts as in Figure 1 are indicated by the same numbers. On the upper surface of the stem base 11, there is a metal tab 9 along the outer periphery of the cap 8.
A surrounding annular groove 21 with a width of 0.2 mm and a depth of 0.2 mm is provided, and since the outflow 20 is blocked by the groove 21C, it flows outward on the stem base surface by more than the groove width. Since it does not extend, it is possible to prevent it from becoming an obstacle to mounting positioning. The formation of the pores can be done by additionally machining or stamping after molding the stem base, or it can be formed by press molding at the same time as the stem base is molded. The width and depth of the groove should be about the same or less than the thickness of the cap to be sufficiently effective.
以上の説明で明らかなように１本発明を応用することに
よって、はめ合い実装方式に使用される半導体素子容器
の素材、メッキ等の選定が容易となバキャップの溶接条
件も緩和され、ひいては実装精度の向上が得られる。な
お上述のレーザーダイオードに眠らず、ＬＥＤや受光素
子にも応用できることは明らかである。As is clear from the above explanation, by applying the present invention, it is easy to select the material, plating, etc. of the semiconductor element container used in the in-fit mounting method, and the welding conditions for back caps are eased, which in turn improves the mounting accuracy. can be improved. It is clear that the present invention can be applied not only to the laser diode described above but also to LEDs and light receiving elements.
第１図は従来の半導体レーザ容器の一例τ示す断面図で
める。第２図は本発明の一実施例を示す断面図でのる。
１．１１・・・・・・ステムベース、２・・・・・・突
起状マウント部、３・・・・・・ヒートシンク、４・・
・・・・レーザベレット、５・・・・・・ボンブーイン
グ線、６・・・・・・封着リード、７・・・・・・溶接
リード、８・・・・・・キャップ、９・・・・・・ガラ
ス％’＜％ｌＯ，２０・・・・・・流れ出し、２１・・
・・・・溝。
東 ／Ｉ！Ｉ
某 ２ 図FIG. 1 is a sectional view showing an example of a conventional semiconductor laser container τ. FIG. 2 is a sectional view showing one embodiment of the present invention. 1.11...Stem base, 2...Protruding mount portion, 3...Heat sink, 4...
... Laser bullet, 5 ... Bomb wire, 6 ... Sealing lead, 7 ... Welding lead, 8 ... Cap, 9. ...Glass%'<%lO, 20...Flow out, 21...
····groove. East /I! I certain 2 figure
Claims (1)
載置し、該素子を囲むように該ベースよシ小さな直径を
有する缶状キャップ金気密封層して成る半導体素子容器
におい−Ｃ１Ｃ１該キヤツブに沿う該ベース面上に該キ
ャップを取り囲む環状の鍔が形成されていることｔ特徴
とする半導体素子容器。A semiconductor device container comprising a semiconductor device placed on one surface of a thick disk-shaped stem base, and a metal hermetic sealing layer of a can-shaped cap having a diameter smaller than that of the base so as to surround the device. A semiconductor device container characterized in that an annular flange surrounding the cap is formed on the base surface along the cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22582283A JPS60117789A (en) | 1983-11-30 | 1983-11-30 | Semiconductor element package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22582283A JPS60117789A (en) | 1983-11-30 | 1983-11-30 | Semiconductor element package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60117789A true JPS60117789A (en) | 1985-06-25 |
Family
ID=16835339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22582283A Pending JPS60117789A (en) | 1983-11-30 | 1983-11-30 | Semiconductor element package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117789A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1004522C2 (en) * | 1995-11-14 | 1999-02-23 | Rohm Co | Semiconductor laser diode assembly and method for its manufacture. |
| US6090642A (en) * | 1996-11-12 | 2000-07-18 | Rohm Co., Ltd. | Semiconductor laser diode assembly and method of manufacturing the same |
| EP1480301A1 (en) * | 2003-05-23 | 2004-11-24 | Agilent Technologies | A hermetic casing, for optical and optoelectronic sub-assemblies |
-
1983
- 1983-11-30 JP JP22582283A patent/JPS60117789A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1004522C2 (en) * | 1995-11-14 | 1999-02-23 | Rohm Co | Semiconductor laser diode assembly and method for its manufacture. |
| US6090642A (en) * | 1996-11-12 | 2000-07-18 | Rohm Co., Ltd. | Semiconductor laser diode assembly and method of manufacturing the same |
| EP1480301A1 (en) * | 2003-05-23 | 2004-11-24 | Agilent Technologies | A hermetic casing, for optical and optoelectronic sub-assemblies |
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