JPS60117632A - Tapered etching method of resin film - Google Patents
Tapered etching method of resin filmInfo
- Publication number
- JPS60117632A JPS60117632A JP58224106A JP22410683A JPS60117632A JP S60117632 A JPS60117632 A JP S60117632A JP 58224106 A JP58224106 A JP 58224106A JP 22410683 A JP22410683 A JP 22410683A JP S60117632 A JPS60117632 A JP S60117632A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resin film
- photo
- resist
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 title claims abstract description 31
- 229920005989 resin Polymers 0.000 title claims abstract description 31
- 238000005530 etching Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 18
- 238000001020 plasma etching Methods 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- 229920003986 novolac Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 12
- 229920001721 polyimide Polymers 0.000 abstract description 10
- 239000009719 polyimide resin Substances 0.000 abstract description 10
- 239000004020 conductor Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910000889 permalloy Inorganic materials 0.000 description 5
- 238000012719 thermal polymerization Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は樹脂膜のテーバエツチング方法に係わシ、特に
樹脂膜のエツチング端面の傾斜角を低くするのに好適な
エツチング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of Taber etching a resin film, and more particularly to an etching method suitable for lowering the inclination angle of the etched end face of a resin film.
一般に樹脂膜のエツチング方法としては樹脂股上にフォ
トレジスト膜を形成し、このフォトレジスト膜をマスク
として酸素プラズマなどによ＃）樹脂膜をエツチングす
る方法が知られている。この場合、エツチングによ多形
成される樹脂！パターン端部の傾斜角は４５〜６０度と
なシ、急峻な段差を発生するという問題があった。A generally known method for etching a resin film is to form a photoresist film on the resin ridge, and use this photoresist film as a mask to etch the resin film using oxygen plasma or the like. In this case, the resin is formed by etching! Since the inclination angle of the pattern end is 45 to 60 degrees, there is a problem in that a steep step is generated.
例えば、近年、高密度磁気バブルメモリ素子を実現する
ために、使用する磁気バブル転送路のパターン周期λが
微小化し、これに用いる磁気バブル径ｄも小さくなシ、
現在では１Ｍビットの磁気バブルメモリ素子が実用化さ
れている。そして、この素子で使用されている磁気バブ
ル径ｄは約２μｍ、マイナループの転送路パターンの周
期λは７〜８μｍ程度であシ、この場合の記憶密度は１
Ｍｂ／ｃｔｌである。さらに高密度素子として、マイナ
ループの転送路パターン周期λが４〜６μｍの素子では
、マイナループ部の下地絶縁膜の１部をエツチングし、
マイナループ部の転送マージンを向上する方法が知られ
ている。すなわち、絶縁膜として用いる樹脂膜の段差部
の発生によシ、この樹脂膜上に形成されるパーマロイパ
ターンに段差が形成され、この段差によってパーマロイ
パターンにパターン切れを発生させたシ、また、このパ
ーマロイパターンからなる磁気バブル転送路の転送マー
ジンを低下させたシするなどの問題があった。For example, in recent years, in order to realize high-density magnetic bubble memory elements, the pattern period λ of the magnetic bubble transfer paths used has become smaller, and the diameter d of the magnetic bubbles used therein has also become smaller.
At present, a 1M bit magnetic bubble memory element has been put into practical use. The diameter d of the magnetic bubble used in this element is about 2 μm, the period λ of the minor loop transfer path pattern is about 7 to 8 μm, and the storage density in this case is 1
Mb/ctl. Furthermore, for a high-density device in which the minor loop transfer path pattern period λ is 4 to 6 μm, a part of the underlying insulating film in the minor loop portion is etched.
A method of improving the transfer margin of the minor loop portion is known. That is, due to the occurrence of a step in the resin film used as an insulating film, a step is formed in the permalloy pattern formed on this resin film, and this step causes pattern breakage in the permalloy pattern. There were problems such as a reduction in the transfer margin of the magnetic bubble transfer path made of a permalloy pattern.
したがって本発明は前述した問題に鑑みてなされたもの
であシ、その目的とするところは、樹脂膜端部のエツチ
ング面角度を基板面に対して低い傾斜角でしかも容易に
形成可能にした樹脂膜のテーパエツチング方法を提供す
ることにある。Therefore, the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to create a resin film that can be easily formed with a low etching surface angle relative to the substrate surface at the edge of the resin film. An object of the present invention is to provide a method for taper etching a film.
このような目的を達成するために本発明は、樹脂膜上に
ポジ形フォトレジストパターンを形成し、ベーク処理を
行ない、フォトレジストパターン端部に傾斜面を形成さ
せた後、プラズマエツチングを行なってフォトレジスト
パターンの傾斜面を樹脂膜に転与させたものである。In order to achieve such an object, the present invention involves forming a positive photoresist pattern on a resin film, performing a baking process to form an inclined surface at the end of the photoresist pattern, and then performing plasma etching. The inclined surface of the photoresist pattern is transferred to the resin film.
次に図面を用いて本発明の実施例を詳細に説明する。 Next, embodiments of the present invention will be described in detail using the drawings.
実施例１
第１図ないし第３図は本発明による樹脂膜のテーバエツ
チング方法を磁気バブルメモリ素子の樹脂絶縁膜の形成
に適用した場合の一実施例を示す要部断面工程図である
。これらの図において、まず第１図に示すようにＧ、Ｇ
、Ｇ基板１上に磁性ガーネット膜２を液相成長させた後
、Ｓ ｊ ０２ ％４３を被着形成する。次に、図示し
ないがこの５ｉＯＪＢ、４３上にコンダクタパターンを
形成した後、この８１０ｇ［３および図示しないコンダ
クタパターン上に厚さ約０．３ ｍｍのポリイミド樹脂
膜４を塗布形成する。次にこの樹脂膜４上にポジ形フォ
トレジストＡＺ１３５０Ｊ（Ｈｏｅｃｈｓｔ社商品）を
回転塗布し、約８０℃で２０分間プリベークを行なって
ポジ形フォトレジストＪＮ５を形成した後、ｉ＜Ａｓｐ
Ｅｇ社製の２００１形マスクアライナを用いて近接露光
を行なってフォトレジストパターンを形成する。この際
、このフォトレジストＷＡ５の端面傾斜角θ１は、ＳＥ
Ｍ観察によれば約８０度であった。ここで、以後の傾斜
角の測定は全てこの８部Ｍ断面観察によって行なう。次
にフォトレジストパターン形成後のウェハをフォトレジ
ストの軟化温度１４０度以上の高温度１５０度で約２０
分間ベークする。これによってフォトレジスト膜５はレ
ジスト・リフローを生じ、流動して第２図に示すように
その傾斜角０２は約２５度となる。この場合、ベーク炉
はダン産業展の循環形クリーンオープンを使用した。Embodiment 1 FIGS. 1 to 3 are cross-sectional process diagrams showing essential parts of an embodiment in which the Taber etching method for a resin film according to the present invention is applied to the formation of a resin insulating film of a magnetic bubble memory element. In these figures, first, as shown in Figure 1, G, G
After a magnetic garnet film 2 is grown on the G substrate 1 by liquid phase growth, S j 02 % 43 is deposited. Next, a conductor pattern (not shown) is formed on this 5i OJB 43, and then a polyimide resin film 4 with a thickness of about 0.3 mm is formed by coating on this 810g[3 and the conductor pattern (not shown). Next, a positive photoresist AZ1350J (manufactured by Hoechst) was spin-coated on this resin film 4, and prebaked at about 80°C for 20 minutes to form a positive photoresist JN5.
A photoresist pattern is formed by performing close exposure using a 2001 type mask aligner manufactured by Eg. At this time, the end face inclination angle θ1 of this photoresist WA5 is SE
According to M observation, it was about 80 degrees. Here, all subsequent measurements of the inclination angle are performed by observing this 8-section M cross section. Next, the wafer after the photoresist pattern has been formed is heated at a high temperature of 150 degrees, which is higher than the softening temperature of the photoresist at 140 degrees, for about 20 minutes.
Bake for a minute. As a result, the photoresist film 5 undergoes resist reflow and flows, so that its inclination angle 02 becomes approximately 25 degrees as shown in FIG. In this case, the baking oven used was a recirculating type clean open manufactured by Dan Industrial Exhibition.
次にこの高温度でベークしたウエノ１をバレル形プラズ
マエツチング装置（東京応化製ＯＰＭ−１）を使用シ、
圧力約Ｉ Ｔｏｒｒ 、 ＲＦ出力１００Ｗ、ガスは空
気を用いてエツチングを行なった。この場合、エツチン
グのレートはフォトレジストＡ Ｚ １３５０Ｊが１８
０＾／分、ポリイミド樹脂が１５０＾／分である。この
ような条件で約３０分間エツチングを行なうと、第３図
に示すようにフォトレジスト膜５の端面傾斜角θ８が約
２５度、ポリイミド樹脂膜４の端面１頃斜角θ４は約２
０度となる。次にこのウェハをアセトンに浸積してフォ
トレジスト膜５を除去する。Next, Ueno 1 baked at high temperature was etched using a barrel-type plasma etching device (OPM-1 manufactured by Tokyo Ohka).
Etching was performed using air at a pressure of about I Torr and an RF output of 100 W. In this case, the etching rate of photoresist AZ 1350J is 18
0^/min, polyimide resin is 150^/min. When etching is performed for about 30 minutes under these conditions, as shown in FIG. 3, the end face inclination angle θ8 of the photoresist film 5 becomes about 25 degrees, and the inclination angle θ4 around the end face 1 of the polyimide resin film 4 becomes about 25 degrees.
It becomes 0 degrees. Next, this wafer is immersed in acetone to remove the photoresist film 5.
このような方法によれば、ポリイミド樹脂膜４端部の傾
斜角θ４が約２０度と極めて緩やかに形成することがで
きた。According to such a method, the inclination angle θ4 of the end portion of the polyimide resin film 4 was able to be formed extremely gently at about 20 degrees.
実施例２
実施例１によシ製作したウェハは、ポリイミド樹脂膜４
のエツチング後にアセトンに浸漬してフォトレジスト膜
５を除去するのに長時間を要する。Example 2 A wafer manufactured according to Example 1 had a polyimide resin film 4.
After etching, it takes a long time to remove the photoresist film 5 by immersing it in acetone.
これは前述したようにレジストフローを発生させるだめ
の高温度ベークによシフオドレジスト膜５が熱重合を起
しているためである。そこでポジ形フォトレジスト膜５
のベースレジンであるノボラック樹脂の平均分子量に着
目して平均分子量に対して軟化温度および重合温度を調
べた。その結果第４図に示すようなデーゾが得られた。This is because the shift resist film 5 undergoes thermal polymerization due to high temperature baking to generate resist flow, as described above. Therefore, the positive photoresist film 5
Focusing on the average molecular weight of the novolak resin, which is the base resin of , the softening temperature and polymerization temperature were investigated with respect to the average molecular weight. As a result, a deso as shown in FIG. 4 was obtained.
この場合、この実施例では、Ｓｉウェハ上に約１μｍの
厚さにフォトレジスト膜を形成し、約１０μｍ幅のパタ
ーンを形成した後、前述したクリーンオープンを用いて
ベークし、光顕微鏡観察によシフオドレジストだれか発
生した温度を軟化温度とし、熱重合温度は同様にベーク
後、アセトンに約１分間浸種してフォトレジスト膜が不
溶化した温度とした。In this case, in this example, a photoresist film is formed to a thickness of about 1 μm on a Si wafer, a pattern with a width of about 10 μm is formed, and then baked using the clean open method described above, and observed by light microscopy. The temperature at which the photoresist film was partially generated was defined as the softening temperature, and the thermal polymerization temperature was defined as the temperature at which the photoresist film became insolubilized by soaking in acetone for about 1 minute after baking.
同図において、平均分子量６１０ｏ〜８３００の範囲に
位置するＦｌ、ＦＢ、ＦＢ、Ｆ４の４種類が市販されて
いるフォトレジストであシ、平均分子量１８５０および
４０００に位置するＦ５およびＦＯは新たに作製したフ
ォトレジストであり、黒丸のドツトは熱重合温度、白丸
のドツトはレジストリフロー発生温度をそれぞれ示した
ものである。In the figure, four types of commercially available photoresists, Fl, FB, FB, and F4, which have average molecular weights in the range of 610 to 8,300, are used, and F5 and FO, which have average molecular weights of 1,850 and 4,000, are newly prepared. The black dots indicate the thermal polymerization temperature, and the white dots indicate the resist reflow generation temperature.
同図から明らかなよりに平均分子量４０００以下のフォ
トレジストＦ５ 、Ｆａを用いれば、軟化温度以上でか
つ熱重合が起らないベーク温度マージンが得られる。し
たがって、平均分子Ｎ１８５０および４０００のフォト
レジストＦ５およびＦＯを用いて実施例１と同様にポリ
イミド樹脂膜のエツチングを行なったところ、ポリイミ
ド拉ｊ脂膜の傾斜角は約１５度となり、かつアセトンに
浸種することでエツチング後のフォトレジスト膜を完全
に取り除くことかできた。As is clear from the figure, if a photoresist F5 or Fa having an average molecular weight of 4000 or less is used, a baking temperature margin above the softening temperature and without thermal polymerization can be obtained. Therefore, when a polyimide resin film was etched in the same manner as in Example 1 using photoresists F5 and FO with average molecular weights of N1850 and N4000, the inclination angle of the polyimide resin film was about 15 degrees. By doing so, we were able to completely remove the photoresist film after etching.
このような方法によれば、ノボラック樹脂の平均分子量
が４０００以下のフォトレジストをその軟化温度以上の
高温ベークを行なってもアセトンで容易かつ短時間で除
去でき、作業性を向上させることができる。According to such a method, even if a photoresist whose novolak resin has an average molecular weight of 4000 or less is baked at a high temperature above its softening temperature, it can be easily and quickly removed with acetone, and workability can be improved.
以上説明したように本発明によれば、樹脂膜端部の傾斜
角を約３０度以下と極めて低く形成することができる。As explained above, according to the present invention, the inclination angle of the end portion of the resin film can be formed as extremely low as about 30 degrees or less.
また、このような方法によれは、パーマロイパターンで
形成されるイ呂気バブル転送路の途中においてパーマロ
イ転送パターンの下地である樹脂膜の膜厚を変化させて
もその段光による素子の動作マージンの低下を防止する
ことができる。さらに平均分子量４０００以下のノボラ
ック樹脂を含むフォトレジストを用いることにより、エ
ツチング後のフォトレジスト除去がアセトンで容易に可
能となるので、工程が簡素化され、経済的に礎気バブル
メモリ素子が生埋可能となるなどの極めて侵れた効果が
得られる。Furthermore, in this method, even if the thickness of the resin film underlying the permalloy transfer pattern is changed in the middle of the bubble transfer path formed by the permalloy pattern, the operating margin of the element due to the light generated by the change in thickness will be reduced. It is possible to prevent a decrease in Furthermore, by using a photoresist containing a novolac resin with an average molecular weight of 4,000 or less, the photoresist can be easily removed with acetone after etching, which simplifies the process and allows for economical live burying of air bubble memory elements. You can achieve extremely profound effects such as being able to do so.
第１図ないし第３図は本発明による樹脂膜のテーバエツ
チング方法の一例を示す要部断面工程図、第４図はフォ
トレジストのベースレジンの平均分子量による熱特性の
変化を示す特性図である。
１・・・・Ｇ、Ｇ、Ｇ基板、２・轡・・磁性ガーネット
、３・・ｅ ａ ５ｉｎｓ Ｌ ４−・・・ポリイミド
樹脂膜、５・・・−フォトレジスト膜。
第４図
−１−埒分１量Figures 1 to 3 are cross-sectional process diagrams of essential parts showing an example of the Taber etching method for a resin film according to the present invention, and Figure 4 is a characteristic diagram showing changes in thermal characteristics depending on the average molecular weight of the base resin of the photoresist. . 1... G, G, G substrate, 2... Magnetic garnet, 3... e a 5ins L 4-... Polyimide resin film, 5...- Photoresist film. Figure 4-1-1 quantity
Claims (1)
上にポジ形フォトレジスト膜を形成する工程と、前記フ
ォトレジスト膜をベークして該フォトレジスト膜端部に
フォトレジストの傾斜を形成する工程と、前記樹脂膜、
ポジ形フォトレジスト膜をプラズマエツチングして該樹
脂膜端部に傾斜を形成する工程と、前記ポジ形フォトレ
ジストｇをエツチング除去する工程とからなることを特
徴とした樹脂膜のテーパエツチング方法。 ２、前記ポジ形フォトレジスト膜に、ノボラック樹脂の
平均分子量が４０００以下のフォトレジストを用いたこ
とを特徴とする特許請求の範囲第１項記載の樹脂膜のテ
ーバエツチング方法。[Claims] 1. A step of coating and forming a resin film on a substrate, a step of forming a positive photoresist film on the resin ridge, and a step of baking the photoresist film to form an end portion of the photoresist film. a step of forming a slope of photoresist; the resin film;
A method for taper etching a resin film, comprising the steps of plasma etching a positive photoresist film to form a slope at the end of the resin film, and removing the positive photoresist g by etching. 2. The Taber etching method for a resin film according to claim 1, characterized in that the positive photoresist film is a photoresist whose novolac resin has an average molecular weight of 4000 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224106A JPH0634349B2 (en) | 1983-11-30 | 1983-11-30 | Method for manufacturing magnetic bubble memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224106A JPH0634349B2 (en) | 1983-11-30 | 1983-11-30 | Method for manufacturing magnetic bubble memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117632A true JPS60117632A (en) | 1985-06-25 |
| JPH0634349B2 JPH0634349B2 (en) | 1994-05-02 |
Family
ID=16808629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58224106A Expired - Lifetime JPH0634349B2 (en) | 1983-11-30 | 1983-11-30 | Method for manufacturing magnetic bubble memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0634349B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002044805A3 (en) * | 2000-12-01 | 2002-11-28 | Koninkl Philips Electronics Nv | Method of increasing the conductivity of a transparent conductive layer |
| EP1503229A1 (en) * | 2003-08-01 | 2005-02-02 | BAE SYSTEMS Information and Electronic Systems Integration, Inc. | Method of forming interlayer connections in integrated optical circuits, and devices formed using same |
| JP2014113807A (en) * | 2012-12-12 | 2014-06-26 | Toshiba Corp | Ink jet head and ink jet head manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158071A (en) * | 1974-11-18 | 1976-05-21 | Nichiden Varian Kk | SUPATSUTAETSUCHINGUHO |
| JPS5745308A (en) * | 1980-01-29 | 1982-03-15 | Nishihara Environ Sanit Res Corp | Liquid surface decanter |
-
1983
- 1983-11-30 JP JP58224106A patent/JPH0634349B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158071A (en) * | 1974-11-18 | 1976-05-21 | Nichiden Varian Kk | SUPATSUTAETSUCHINGUHO |
| JPS5745308A (en) * | 1980-01-29 | 1982-03-15 | Nishihara Environ Sanit Res Corp | Liquid surface decanter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002044805A3 (en) * | 2000-12-01 | 2002-11-28 | Koninkl Philips Electronics Nv | Method of increasing the conductivity of a transparent conductive layer |
| EP1503229A1 (en) * | 2003-08-01 | 2005-02-02 | BAE SYSTEMS Information and Electronic Systems Integration, Inc. | Method of forming interlayer connections in integrated optical circuits, and devices formed using same |
| JP2014113807A (en) * | 2012-12-12 | 2014-06-26 | Toshiba Corp | Ink jet head and ink jet head manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0634349B2 (en) | 1994-05-02 |
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