JPS60117483A - Magnetic bubble memory device - Google Patents

Abstract

PURPOSE:To prevent errors in the junction part between an ion implantation transfer path and a ''Permalloy'' transfer path from having influences upon adjacent loops by providing a deep groove-shaped cusp or a projecting part with an ion implantation pattern near the junction part and between adjacent loops. CONSTITUTION:A deep groove-shaped cusp 15 or/and a projecting part 16 are provided in the junction part between an ion implantation transfer path 13 and a ''Permalloy '' transfer path 11 and between adjacent loops by an ion implantation pattern. By this constitution, a bubble is acquired by the cusp 15 or the projecting part 16 formed with the ion implantation pattern even if the bubble tries to go to adjacent loops from the transfer path when the bubble is transferred from the ion implantation transfer path 13 to the ''Permalloy'' transfer path 11 in the direction of an arrow 17. Consequently, errors have no influences upon adjacent loops and are limited only in a loop from which the bubble goes away.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a magnetic bubble memory device having a bubble transfer path formed by a mother-Malloy pattern and a bubble transfer path formed by ion implantation on one element.

Background of the Technology In a magnetic bubble memory using magnetic bubbles, there is a method of increasing the storage density by forming multiple bubble transfer paths by ion implantation. However, the bubble transfer path using this ion implantation method has a four-turn driving force compared to the conventional one.
Gu-maroino and turn-yoshi also have the disadvantage of being small,
It has been difficult to design function f-), which requires a relatively strong driving force. For this reason, it has been considered to use a Noyer-Malloy pattern in such locations, and a magnetic bubble memory device has been developed that is a combination of an ion-implanted No-Pull device and a No-Ya-Malloy device.

Prior Art and Problems FIG. 1 is a diagram for explaining a magnetic bubble memory device that is a combination of a conventional ion-implanted bubble device and a Tonoyamalloy device. line, 3 is detector 4
a reading major line having a 5. 5 is a minor loop, 61-2 is a swaszogut connecting the major line for writing and the minor loop, 7 is a replicatorgut connecting the major line for reading and the minor loop, and a is the ion implantation area. There is.

In this conventional example, several bits close to 6.7 (parts indicated by thick lines) of minor loop groups 5-1, 5-2, etc., major line 1 for writing, and major line 3 for reading are arranged in a permalloy pattern. A transfer path is formed using the ion implantation method, and the other portions (portions indicated by thin lines) are formed by ion implantation.

Such a front device has a problem in that bubbles are easily released from the transfer path at the junction between the ion-implanted transfer path and the No. 9-Malloy transfer path and jump into other minor loops, causing errors.

Purpose of the Invention In view of the above conventional problems, an object of the present invention is to provide a magnetic bubble memory device in which errors at the junction between an ion implantation transfer path and a permalloy transfer path do not extend to adjacent loops. It is something to do.

According to the present invention, the structure and object of the invention is to provide a magnetic bubble having a minor loop in which the ion implantation transfer paths formed in the ion implantation method 1 and the permalloy transfer paths formed in the permalloy thin film are connected. To provide a magnetic bubble memory device characterized in that a deep groove-like cusp or protrusion is provided in the ion implantation pattern near and between the junction of an ion implantation transfer path and a permalloy transfer path. This is achieved by

Embodiment of the Invention FIG. 2 is a diagram for explaining a magnetic bubble memory device according to the present invention. In the figure, 10 is a major line, and 11 is a line formed of multiple permalloy thin films.
Malloy transfer path, 12 is an ion implantation region, 13 is an ion implantation transfer path formed by ion implantation, 14 is a dirt conductor pattern, 15 is a deep groove-shaped cusp formed between minor loops by ion implantation turn; 16
1 and 2 respectively show protrusions formed by the ion implantation pattern between the minor loops.

In this embodiment, as shown in FIG. 2, the ion implantation transfer path 13 (in this embodiment, it is formed in a sawtooth shape) and the permalloy transfer path 11 are connected at the junction and between adjacent loops. Deep groove-like cusp 15 and protrusion 16 along the turn
One or both of these are provided.

In this embodiment configured as described above, the bubble is connected from the ion implantation transfer path 13 to the permalloy transfer path 1 as shown by the arrow 17.
1, even if the bubble attempts to leave the transfer path and go toward an adjacent loop, it will be captured by the cusp 15 or protrusion 16 of the ion implantation A' turn. Therefore, adjacent loops are not affected, and errors can be confined to the loops where the bubble is far away.

Effects of the Invention As explained in detail above, the magnetic bubble memory device of the present invention has a deep groove formed by the ion implantation pattern near the junction between the ion implantation transfer path for transferring bubbles and the permalloy transfer path and between adjacent minor loops. By providing a shaped cusp or protrusion, the cusp or protrusion can capture the bubbles that are separated from the transfer path near the joint, and the error can be minimized without affecting other adjacent loops. It is a big thing.

[Brief explanation of the drawing]

FIG. 1 is a diagram illustrating a magnetic bubble memory device having a conventional ion implantation transfer path and an IP-Malloy transfer path, and FIG. 2 is a diagram illustrating a magnetic bubble memory device according to the present invention. In the drawing, 10 is a major line, 11 is a No. 4-Malloy transfer path, 12 is an ion implantation region, 131d4 is an on-implantation transfer path, 14 is a conductor no. turn, 15 is a cusp according to an ion implantation pattern, and 16 is an ion implantation No. 4 transfer path. The protrusions due to turns are shown respectively.

Claims (1)

[Claims] 1. In a magnetic bubble memory device having a minor loop in which multiple ion implantation transfer paths formed by the ion implantation method and a 74-minor Malloy transfer path formed by a 74-Malloy thin film are connected, the ion implantation transfer path and the /4' - A magnetic bubble memory device characterized in that a deep groove-like cusp or protrusion is provided near the junction with the Malloy transfer path and between the ion implantations and the turns.