JPS60795U

JPS60795U - High density magnetic bubble memory element

Info

Publication number: JPS60795U
Application number: JP2825784U
Authority: JP
Inventors: 柳瀬　武泰; 博史井上
Original assignee: 富士通株式会社
Priority date: 1984-03-01
Filing date: 1984-03-01
Publication date: 1985-01-07

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は磁気バブルメモリ装置の１例の一部開切した斜
視図、第２図は伝播路のパーマロイパターンの１例の平
面図、第３図は本考案にかかる実施例の磁気バブルメモ
リ素子の構成図、第４図はそのマイナーループの平面図
、第５図は第４図の■−■線における断面図である。５・・・基板、６．　６　１＊　　６　２・・・＄−ｎ
・・・マイナーループ、７．８・・・メジャーライン、
９・・・バブル発生器、１０・・・検出器、１１．１１
’・・・トランスファゲート、スワップゲート、レプリ
ケートゲート等、１２　１．　１２　２．　１２　３．
　１３　　ｒ、　　１３　２…パーマロイパターン、１
４・・・スペーサ、１５…磁性薄膜、１６・・・絶縁層
。FIG. 1 is a partially cutaway perspective view of an example of a magnetic bubble memory device, FIG. 2 is a plan view of an example of a permalloy pattern of a propagation path, and FIG. 3 is a magnetic bubble memory according to an embodiment of the present invention. FIG. 4 is a plan view of a minor loop thereof, and FIG. 5 is a cross-sectional view taken along the line ■--■ in FIG. 4. 5... Substrate, 6. 6 1* 6 2...$-n
...minor loop, 7.8...major line,
9... Bubble generator, 10... Detector, 11.11
'...Transfer gate, swap gate, replicate gate, etc. 12 1. 12 2. 12 3.
13 r, 13 2... Permalloy pattern, 1
4... Spacer, 15... Magnetic thin film, 16... Insulating layer.

Claims

[Claims for Utility Model Registration] 1. A first permalloy layer having a major line for writing and reading information and a minor loop for accumulating information, and selecting every other bit of the permalloy pattern constituting the minor loop. In a magnetic bubble memory element in which the remaining every other bit pattern is a second nopermalloy layer, and the L12th permalloy layer is sequentially formed via a spacer, the pattern of the second permalloy layer farther from the substrate surface is A high-density magnetic bubble memory element characterized in that the period is larger than the pattern period of a first permalloy layer close to a substrate surface. 2. In the high-density magnetic bubble memory device according to Claim 1 of the Utility Model Registration Claim, the permalloy pattern period of the portion other than the minor loop is made twice or more larger than the permalloy pattern period constituting the minor loop. Features a high-density magnetic bubble memory element.