JPS60112683A - Surface smoothing method for ceramic substrate - Google Patents

Surface smoothing method for ceramic substrate

Info

Publication number
JPS60112683A
JPS60112683A JP21866783A JP21866783A JPS60112683A JP S60112683 A JPS60112683 A JP S60112683A JP 21866783 A JP21866783 A JP 21866783A JP 21866783 A JP21866783 A JP 21866783A JP S60112683 A JPS60112683 A JP S60112683A
Authority
JP
Japan
Prior art keywords
ceramic substrate
coating composition
substrate
coating
surface roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21866783A
Other languages
Japanese (ja)
Other versions
JPH0343230B2 (en
Inventor
岩森 優範
真 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Soda Co Ltd
Original Assignee
Nippon Soda Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soda Co Ltd filed Critical Nippon Soda Co Ltd
Priority to JP21866783A priority Critical patent/JPS60112683A/en
Publication of JPS60112683A publication Critical patent/JPS60112683A/en
Publication of JPH0343230B2 publication Critical patent/JPH0343230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035Silica

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、セラミックスの表面処理に係り、さらに詳し
くは、集積回路モジュール用のセラミック基板の表面粗
さを減少させる表面平滑化方法に関する。集積回路モジ
ュールは、平滑な基板上にパターンニングを行い、それ
をエツチングすることによシ製作されるが、その基板と
して、シリコン基板、ガラス基板と共にセラミック基板
が広く使用されている。セラミック基板は、微細な無機
物結晶を成形後、焼結して製造すゐため、シリコン基板
、ガラス基板等に比較して、その表面は大きな凹凸のあ
る粗いものである。集積回路モジュールの高集積度化に
伴って、パターンの巾が小さくなるに従い基板の表面粗
さが問題となシ、表面粗さの大きいセラミック基板を用
いる場合の集積度には限界が生じる。セラミック基板の
表面を平滑化する方法として、機械的な研摩方法が一般
に採用されているが、高硬度の無機物結晶の集合体であ
る極く薄いセラミック基板の機械研摩は極めて困難であ
シ、結晶粒の欠損や、結晶粒界に添っでの割れを生じ易
いため歩留シが悪く、極めて高価なものとなっている。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to surface treatment of ceramics, and more particularly to a surface smoothing method for reducing surface roughness of a ceramic substrate for an integrated circuit module. Integrated circuit modules are manufactured by patterning and etching a smooth substrate, and ceramic substrates are widely used along with silicon substrates and glass substrates. Ceramic substrates are manufactured by molding fine inorganic crystals and then sintering them, so their surfaces are rough and have large irregularities compared to silicon substrates, glass substrates, etc. With the increase in the degree of integration of integrated circuit modules, the surface roughness of the substrate becomes a problem as the width of the pattern becomes smaller, and there is a limit to the degree of integration when using a ceramic substrate with a large surface roughness. Mechanical polishing methods are generally used to smooth the surface of ceramic substrates, but it is extremely difficult to mechanically polish extremely thin ceramic substrates, which are aggregates of highly hard inorganic crystals. Since grain defects and cracks along grain boundaries are likely to occur, the yield is poor and the product is extremely expensive.

機械研摩法に代るセラミック基板の表面平滑化方法とし
て、特開昭55−75981号公報に、セラミック基板
の表面に少なくとも1つの非重合体のシリコン化合物を
含有する液状の被覆組成物を被覆して乾燥し、加熱焼成
する方法が提案されている。しかしながら、該方法にお
いて例示される被覆組成物には、塗膜形成性を付与する
ために、エチレン結合を有する不飽和有機シリコン化合
物が添加されているため、ゲル化が起シ易く被覆組成物
の安定性が悪い。また、不飽和有機シリコン化合物を含
有しない被覆組成物はそれを含有するものに比べて塗膜
形成性が慈くなる。さらに、エチレン結合を有する不飽
和シリコン化合物は高価であシ入手が困難である。
As a method for smoothing the surface of a ceramic substrate in place of the mechanical polishing method, JP-A-55-75981 discloses a method of coating the surface of a ceramic substrate with a liquid coating composition containing at least one non-polymer silicon compound. A method of drying and heating and baking has been proposed. However, since the coating composition exemplified in this method contains an unsaturated organosilicon compound having an ethylene bond in order to impart film-forming properties, gelation tends to occur and the coating composition Poor stability. Furthermore, coating compositions that do not contain unsaturated organosilicon compounds have better film-forming properties than those that contain them. Furthermore, unsaturated silicon compounds having ethylene bonds are expensive and difficult to obtain.

することをその目的とする。Its purpose is to.

本発明者等は、前記目的を達成すべく鋭意研究した結果
、アルコキシシラン類と水とを反応させて得られるオリ
ゴマーを主成分とする有機溶剤溶液が、塗膜形成性に優
れ、かつ極めて安定であることに着目し、本発明を完成
した。
As a result of intensive research to achieve the above object, the present inventors have found that an organic solvent solution containing oligomers as a main component obtained by reacting alkoxysilanes with water has excellent coating film forming properties and is extremely stable. The present invention was completed by paying attention to this fact.

本発明は、セラミック基板表面に、アルコキシシラン類
と水とを反応させて得られるオリゴマーを含有する有機
溶剤溶液を被覆組成物として塗布して塗膜を形成した後
、加熱焼成することを特徴とするセラミック基板の表面
平滑化方法である。
The present invention is characterized in that an organic solvent solution containing an oligomer obtained by reacting alkoxysilanes with water is applied as a coating composition to the surface of a ceramic substrate to form a coating film, and then heated and baked. This is a method for smoothing the surface of a ceramic substrate.

本発明において、アルコキシシラン類は、下記一般式(
1) %式%(1) (ここにRは、炭素数1〜18の1価の炭化水素基の同
種または異種を表す。)で表される化合物であシ、水と
反応させることによシ、R −o+si、o ′+結合を有するオリゴマーまたはポ
リR マーを容易に形成する。アルコキシランとして、テトラ
メトキシシラン、γトラエトキシシラン、テトライソプ
ロポキシシラン、テトラブトキシシラン、ジメトキシジ
ェトキシシラン、ジメトキシジインプロポキシシラン、
ジェトキシジブトキシシラン、ジイソプロポキシジブト
キシシラン、テトラジエチルヘキソキシシラン等が挙ケ
ラれ、テトラメトキシラン、テトラエトキシシラン、テ
トライソプロポキシシラン、テトラブトキシシラン等が
1朶的に生産されており、入手が容易であるので好まし
く使用される。
In the present invention, alkoxysilanes are expressed by the following general formula (
1) A compound represented by the formula % (1) (where R represents the same or different type of monovalent hydrocarbon group having 1 to 18 carbon atoms), which can be reacted with water. It easily forms oligomers or polyR-mers having Si, R-o+si, and o'+ bonds. As the alkoxylan, tetramethoxysilane, γtraethoxysilane, tetraisopropoxysilane, tetrabutoxysilane, dimethoxyjethoxysilane, dimethoxydiynepropoxysilane,
Jetoxydibutoxysilane, diisopropoxydibutoxysilane, tetradiethylhexoxysilane, etc. are listed, and tetramethoxylan, tetraethoxysilane, tetraisopropoxysilane, tetrabutoxysilane, etc. are produced in one place. , is preferably used because it is easily available.

本発明において、前記したアルコキシシラン類の1種ま
たは2種以上と水とを反応させて得られる重合度2〜2
0.分子量として500〜l0Q000のオリゴマーを
Si酸化物に換算して1〜15重量%含有する有機溶剤
溶液を被覆組成物として用いる。アルコキシシランのモ
ノマーは、大気中の水分を吸収して容易に重合するため
、被覆組成物を白濁化させ安定性が悪くなるので好まし
くなく、また、重合度が20を起えるポリマーは有機溶
剤に溶解しにくく、溶解したとしても被覆組成物の粘度
が大きくなシ過ぎるので好ましくない。
In the present invention, the degree of polymerization obtained by reacting one or more of the above alkoxysilanes with water is 2 to 2.
0. An organic solvent solution containing 1 to 15% by weight of an oligomer having a molecular weight of 500 to 10Q000 in terms of Si oxide is used as a coating composition. Alkoxysilane monomers are undesirable because they absorb moisture in the air and easily polymerize, making the coating composition cloudy and poor stability.Also, polymers with a degree of polymerization of 20 are not suitable for organic solvents. It is not preferred because it is difficult to dissolve and even if it does dissolve, the viscosity of the coating composition is too high.

被覆組成物中のオリゴマー濃度は、Si酸化物に換算し
た濃度が小さ過ぎると、それをセラミック基板に塗布し
て塗膜を形成し、加熱焼成した際に形成されるS1酸化
物被膜の厚さが薄くなシセラミック基板の平滑化のため
の被覆組成物の塗布および加熱焼成の繰返し回数が多く
なるので好ましくなく、また、濃度が大き過ぎると形成
される塗膜が厚くなシ過ぎ、加熱焼成時にクジツクを生
じ易くなるので好ましくない。オリゴマーの生成反応は
、アルコキシシラン類と水とを有機溶剤中において直接
反応させてもよく、マた、アルコールと酢酸等の有機酸
との存在下に反応させてもよい。
If the concentration of the oligomer in the coating composition is too low in terms of Si oxide, the thickness of the S1 oxide film formed when it is applied to a ceramic substrate to form a coating film and heated and baked will decrease. This is undesirable because it increases the number of repetitions of coating and heating and baking the coating composition for smoothing the ceramic substrate. This is not preferable because it sometimes tends to cause scratches. The oligomer production reaction may be carried out by directly reacting alkoxysilanes with water in an organic solvent, or in the presence of an alcohol and an organic acid such as acetic acid.

有機溶剤としては、オリゴマーを溶解し得るものであれ
ばいずれをも使用することができ、たとえば、オクタン
等の常温で液体の脂肪族炭化水素類、ベンゼン、トルエ
ン、キシレン等の芳香族炭化水素類、)リクロロエチレ
ン、パークロロエチレン、クロロベンゼン等のハロゲン
化炭化水素類、メタノール、エタノール、イソプロパツ
ール、ノルマルブタノール等の低級アルコール類、酢酸
メチル、酢酸エチル等のエステル類、アセチルアセトン
、ベンゾイルアセトン等のβ−ジケト/類、アセト酢酸
、グロビオニル酪酸等のケトン酸類およびその低級アル
キルエステル類等が挙げられる。
Any organic solvent can be used as long as it can dissolve the oligomer, such as aliphatic hydrocarbons that are liquid at room temperature such as octane, aromatic hydrocarbons such as benzene, toluene, and xylene. ,) Halogenated hydrocarbons such as dichlorethylene, perchlorethylene, and chlorobenzene, lower alcohols such as methanol, ethanol, isopropanol, and n-butanol, esters such as methyl acetate and ethyl acetate, acetylacetone, benzoylacetone, etc. Examples include β-diketo acids, ketonic acids such as acetoacetic acid and globionylbutyric acid, and lower alkyl esters thereof.

これらの有機溶剤は単独で用いてもよく、また、2種以
上の混合溶剤として用いてもよい。まだ、被覆組成物に
は、ガラス質形成剤としてアルカリ金属酸化物、リン化
合物等を所望によシ添加することができる。
These organic solvents may be used alone or as a mixed solvent of two or more. Furthermore, alkali metal oxides, phosphorus compounds, etc. can be added to the coating composition as desired as glass-forming agents.

本発明において、前記被覆組成物をセラミック基板表面
に塗布して塗膜を形成させた後、150℃以上の温度で
加熱焼成することにより、表面の平滑な金属酸化物被膜
が該セラミック基板上に形成される。セラミック基板の
表面粗さによるが、1回の被覆組成物の塗布、および加
熱焼成でセラミック基板の表面粗さを解消できない場合
には、それを複数回繰返すことによシ、平滑化すること
ができる。加熱焼成温度が低く過ぎると、オリゴマーの
置換基または水酸基が完全に脱離せず酸化物被膜内に残
留する場合があシ好ましくない。また、極端に高すぎる
と、酸化物被膜の結晶化または結晶が成長し粒状化する
ので好ましくない。好ましい加熱焼成温度は、通常、3
00℃〜ioo。
In the present invention, the coating composition is applied to the surface of the ceramic substrate to form a coating film, and then heated and baked at a temperature of 150°C or higher to form a metal oxide coating with a smooth surface on the ceramic substrate. It is formed. Depending on the surface roughness of the ceramic substrate, if the surface roughness of the ceramic substrate cannot be eliminated by applying the coating composition and heating and baking it once, it can be smoothed by repeating the process multiple times. can. If the firing temperature is too low, the substituents or hydroxyl groups of the oligomer may not be completely eliminated and may remain in the oxide film, which is not preferable. On the other hand, if it is extremely high, the oxide film will crystallize or the crystals will grow and become granular, which is not preferable. The preferred heating and firing temperature is usually 3
00℃~ioo.

℃である。被覆組成物のセラミック基板への塗布法には
、特に制限はないが、均一な厚さの塗膜の得られる浸漬
引上げ法が好ましく使用される。
It is ℃. There are no particular restrictions on the method of applying the coating composition to the ceramic substrate, but a dipping and pulling-up method is preferably used since it provides a coating film of uniform thickness.

添付第1図に、本発明の方法で処理したセラミック基板
の表向粗さの測定結果を、未処理のセラミック基板およ
び市販されているガラス基板と比較して示す。第1図か
ら明らかな如く、本発明の方法による処理を繰返すこと
にょシ、セラミック基板は平滑化され、ガラス基板に近
い平滑度が得られる。
The attached FIG. 1 shows the measurement results of the surface roughness of a ceramic substrate treated by the method of the present invention in comparison with an untreated ceramic substrate and a commercially available glass substrate. As is clear from FIG. 1, by repeating the treatment according to the method of the present invention, the ceramic substrate is smoothed and has a smoothness close to that of a glass substrate.

本発明は、安価で安定な被覆組成物を用いるセラミック
基板の経済的なかつ工業的な表面平滑化方法を提供する
ものであり、その産業的意義は極めて重要である。
The present invention provides an economical and industrial surface smoothing method for ceramic substrates using an inexpensive and stable coating composition, and its industrial significance is extremely important.

以下に、本発明を実施例により、さらに詳細に説明する
。ただし、本発明の範囲は、下記実施例によシ何等限定
されるものではない。
EXAMPLES Below, the present invention will be explained in more detail with reference to Examples. However, the scope of the present invention is not limited in any way by the following examples.

実施例1 被覆組成物の調製; テトラメトキシシラン: 126fにエタノール:42
75’1酢酸:199fおよび塩酸: 0.1 fを加
え、70℃の温度下に10時間攪拌し反応させ、分子量
L000〜IQOOOのオリゴマーをSiO□に換算し
た濃度で5チ含有する被覆組成物を調製した。
Example 1 Preparation of coating composition; Tetramethoxysilane: 126f to ethanol: 42
75'1 Acetic acid: 199f and Hydrochloric acid: 0.1f were added, stirred and reacted at a temperature of 70°C for 10 hours, and a coating composition containing oligomers with a molecular weight of L000 to IQOOOO at a concentration of 5x in terms of SiO□ was obtained. was prepared.

セラミック基板の平滑化処理; 100■×150調×2鱈の市販のアルミナ基板を前記
調製した被覆組成物に浸漬し、25cm1分の速度で引
上げた後、150℃の温度に10分間保持して乾燥し塗
膜を形成した。2いて500℃の温度に30分間保持し
て加熱焼成して5i02被膜を形成した。さらに2回、
被覆組成物の塗布および加熱焼成を前記と同一の条件で
行いSiO□被膜を形成した。アルミナ基板および5i
02被覆の各回毎に薄膜段差測定器(小坂研究所製:E
T−10型)を用い、触針: 0.5 μmR1荷重:
 20mg1測定速度4μm/ secの条件で表面粗
さを測定した。表面粗さの測定結果を、市販のガラス基
板の表面粗さと共に第1図中に示す。添付第1図から明
らかな如く、被覆組成物の塗布および加熱焼成を繰返す
度数が増加するにつれて、表面が平滑化する。
Smoothing treatment of ceramic substrate: A commercially available alumina substrate of 100 × 150 × 2 pieces was immersed in the coating composition prepared above, pulled up by 25 cm at a speed of 1 minute, and then held at a temperature of 150 ° C. for 10 minutes. It dried to form a coating film. 2 and then held at a temperature of 500° C. for 30 minutes to form a 5i02 film. Two more times
The coating composition was applied and fired under the same conditions as above to form a SiO□ film. Alumina substrate and 5i
02 For each coating, use a thin film step measuring device (manufactured by Kosaka Institute: E).
T-10 type), stylus: 0.5 μmR1 load:
The surface roughness was measured under the conditions of 20 mg/measurement speed of 4 μm/sec. The measurement results of the surface roughness are shown in FIG. 1 together with the surface roughness of a commercially available glass substrate. As is clear from the attached FIG. 1, the surface becomes smoother as the number of times the coating composition is applied and heated and baked increases.

実施例2 種々の被覆組成物を調製し、該被覆組成物を用いて、市
販のアルミナ基板の平滑化処理を行った。
Example 2 Various coating compositions were prepared, and a commercially available alumina substrate was smoothed using the coating compositions.

被覆組成物の調製条件、アルミナ基板の平滑化処理条件
および表面粗さの測定結果を実施例1と共に第1表に示
す。
The preparation conditions of the coating composition, the smoothing treatment conditions of the alumina substrate, and the measurement results of the surface roughness are shown in Table 1 together with Example 1.

第1表中において、表面粗さは、最大山と最大釜との段
差をμmで表す。
In Table 1, the surface roughness represents the step difference between the maximum peak and the maximum pot in μm.

(以下&>U) 実施例3 被核組成物の安定性: 実施例1で調製した被覆組成物について、密閉容器中に
入れ、室温下に長時間放置し、その間の20℃における
粘度変化を測定した。
(Hereinafter &>U) Example 3 Stability of nucleated composition: The coating composition prepared in Example 1 was placed in a sealed container and left at room temperature for a long time, and the viscosity change at 20 ° C. It was measured.

測定結果を第2表に示す。The measurement results are shown in Table 2.

第2表 また、これら長時間放置した被覆組成物を用いて、実施
例1と同様にして、アルミナ基板の平滑化処理を行った
ところ、実施例1と同等の表面粗さの平滑表面を得るこ
とができた。
Table 2 Also, when alumina substrate was smoothed in the same manner as in Example 1 using these coating compositions left for a long time, a smooth surface with the same surface roughness as in Example 1 was obtained. I was able to do that.

【図面の簡単な説明】[Brief explanation of drawings]

第1図 実施例1で測定した、基板の表面粗さを表す曲
線 だて軸倍率 5QOOO倍 横軸倍率 aooo倍 使用符号 Aニガラス基板 B;セラミック基板 C:1回目の平滑化処理後の基板 D:2回目の平滑化処理後の基板 E:3回目の平滑化処理後の基板 特許出願人 日本曹達株式会社 代理人(6286)伊藤晴之 (7125)横山吉美゛
Figure 1. Curve representing the surface roughness of the substrate measured in Example 1. Axis magnification: 5QOOOO times Horizontal axis magnification: aooo times Code used: A, glass substrate B; ceramic substrate C: substrate D after first smoothing treatment. :Substrate E after second smoothing treatment:Substrate after third smoothing treatment Patent applicant Nippon Soda Co., Ltd. Agent (6286) Haruyuki Ito (7125) Yoshimi Yokoyama

Claims (1)

【特許請求の範囲】 1、セラミック基板表面に、アルコキシシラン類と水と
を反応させて得られるオリゴマーを含有する有機溶剤溶
液を被覆組成物として塗布して塗膜を形成した後、加熱
焼成することを特徴とするセラミック基板の表面平滑化
方法 2、オリゴマーの分子量が500〜l0QOOOである
特許請求の範囲第1項記載の方法 3、被覆組成物中のオリゴマー濃度がケイ素酸化物に換
算して1〜15重量%である特許請求の範囲第1項記載
の方法 4、被覆組成物の塗膜を形成したセラミック基板の加熱
焼成温度が150℃以上である特許請求の範囲第1項記
載の方法 5、セラミック基板表面への被覆組成物の塗布および加
熱焼成を2回以上繰返す特許請求の範囲第1項記載の方
[Claims] 1. An organic solvent solution containing an oligomer obtained by reacting alkoxysilanes with water is applied as a coating composition to the surface of a ceramic substrate to form a coating film, and then heated and baked. A method 2 for smoothing the surface of a ceramic substrate characterized by 1 to 15% by weight, method 4 according to claim 1, and method according to claim 1, wherein the heating and firing temperature of the ceramic substrate on which the coating film of the coating composition is formed is 150° C. or higher. 5. The method according to claim 1, in which applying the coating composition to the surface of the ceramic substrate and heating and baking are repeated two or more times.
JP21866783A 1983-11-22 1983-11-22 Surface smoothing method for ceramic substrate Granted JPS60112683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21866783A JPS60112683A (en) 1983-11-22 1983-11-22 Surface smoothing method for ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21866783A JPS60112683A (en) 1983-11-22 1983-11-22 Surface smoothing method for ceramic substrate

Publications (2)

Publication Number Publication Date
JPS60112683A true JPS60112683A (en) 1985-06-19
JPH0343230B2 JPH0343230B2 (en) 1991-07-01

Family

ID=16723533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21866783A Granted JPS60112683A (en) 1983-11-22 1983-11-22 Surface smoothing method for ceramic substrate

Country Status (1)

Country Link
JP (1) JPS60112683A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0270229A2 (en) * 1986-12-03 1988-06-08 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0270229A2 (en) * 1986-12-03 1988-06-08 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics

Also Published As

Publication number Publication date
JPH0343230B2 (en) 1991-07-01

Similar Documents

Publication Publication Date Title
US5152834A (en) Spin-on glass composition
US5302198A (en) Coating solution for forming glassy layers
EP0447611B1 (en) Planarizing silsesquioxane copolymer coating
US5472488A (en) Coating solution for forming glassy layers
US4694040A (en) Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof
EP0327311B1 (en) A coating fluid for forming an oxide coating
US20010024685A1 (en) Method for forming a protective coating and substrates coated with the same
TW574319B (en) Film forming composition, porous film and their preparation
JP2016053155A (en) Polyarylene material
JPS60112683A (en) Surface smoothing method for ceramic substrate
JP2002201415A (en) Application liquid for silica-based coating film formation, method for manufacturing silica-based coating film, and semiconductor device
KR100405312B1 (en) Organic silicate polymer and low dielectric insulation film comprising the same
JPH03221577A (en) Coating solution for insulating film formation
JPS6150903B2 (en)
JPH08283661A (en) Composition for coating layer
JPH0260397B2 (en)
JPH08120225A (en) Composition for forming coating silica film
KR100422916B1 (en) Organic silicate polymer and low dielectric insulation film comprising the same
JP2001262062A (en) Coating liquid for forming silica coating film, preparation process of silica coating film, silica coating film, semiconductor element using the film and multi-layer wiring board
JP4248609B2 (en) Silica-based coating composition and silica-coated substrate
JPH05179202A (en) Coating solution for forming silica coating film
US4835017A (en) Liquid composition for forming silica-based coating film
JP2520834B2 (en) Inorganic film forming method and film forming article
JPH09183665A (en) Coating composition for optical device
JPS6155164A (en) Production of silica film-forming coating solution