JPS60103703A - Power amplifier circuit - Google Patents
Power amplifier circuitInfo
- Publication number
- JPS60103703A JPS60103703A JP20996583A JP20996583A JPS60103703A JP S60103703 A JPS60103703 A JP S60103703A JP 20996583 A JP20996583 A JP 20996583A JP 20996583 A JP20996583 A JP 20996583A JP S60103703 A JPS60103703 A JP S60103703A
- Authority
- JP
- Japan
- Prior art keywords
- fundamental wave
- short
- transmission line
- harmonics
- circuited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】 (技術分野) 本発明は、効率の高い電力増幅回路に関する。[Detailed description of the invention] (Technical field) The present invention relates to a highly efficient power amplifier circuit.
(従来技術)
従来、高効率電力増幅回路として主に電流源として動作
する増幅素子と特定の高調波インピーダンスを持つ負荷
回路で構成されたF級電力増幅器が用いられていた。(Prior Art) Conventionally, a class F power amplifier has been used as a high-efficiency power amplification circuit, which is composed of an amplification element that mainly operates as a current source and a load circuit having a specific harmonic impedance.
第1図は従来のF級電力増幅器の一例を示す回路図であ
る。第1図において、増幅素子ノの負荷は1/4波長伝
送線路2と基本波に共限する並列共振回路3により構成
されていた。このF級電力増幅器は、1/4波長伝送線
路2の出力側を高調波に対して短絡させ、増幅素子1の
負荷、つまシ1/4波長伝送線路2の入力側を基本波お
よび奇数次高調波に対して開放、偶数次高調波に対して
短絡とすることによシ効率の高い電力増幅をはかるもの
であった。しかしながら、1/4波長伝送線路2の出力
側は、その短絡に並列共振回路3のコンデンサを利用し
ているため高調波に対して十分な短絡となシ得ず、又並
列共振回路3は基本波を取り出すために基本波で共振さ
せ高インピーダンスとしているだめ、結局第1図に示す
回路構成でI′i1/4波長伝送線路2の出力側を基本
波、高調波に対して短絡とすることができなかった。そ
のだめ1/4波長伝送線路2の入力側、即ち増幅素子1
の負荷は基本波、奇数次高調波で開放とならず、又偶数
次高調波で短絡とならないという欠点があシ理想的な効
率のよい電力増幅が得られなかった。FIG. 1 is a circuit diagram showing an example of a conventional class F power amplifier. In FIG. 1, the load on the amplifying element is composed of a quarter-wavelength transmission line 2 and a parallel resonant circuit 3 that is mutually limited to the fundamental wave. This class F power amplifier short-circuits the output side of the 1/4 wavelength transmission line 2 with respect to harmonics, and connects the load of the amplifying element 1 and the input side of the 1/4 wavelength transmission line 2 to the fundamental wave and odd-numbered harmonics. Highly efficient power amplification was achieved by opening to harmonics and shorting to even-order harmonics. However, since the output side of the 1/4 wavelength transmission line 2 uses the capacitor of the parallel resonant circuit 3 for short-circuiting, it cannot be sufficiently short-circuited against harmonics, and the parallel resonant circuit 3 is basically In order to extract the wave, it is necessary to resonate with the fundamental wave and create a high impedance, so in the end, the output side of the I'i 1/4 wavelength transmission line 2 is short-circuited to the fundamental wave and harmonics using the circuit configuration shown in Fig. 1. I couldn't do it. Otherwise, the input side of the 1/4 wavelength transmission line 2, that is, the amplification element 1
The load has the disadvantage that it is not open-circuited by the fundamental wave and odd-numbered harmonics, and is not short-circuited by even-numbered harmonics, and ideally efficient power amplification cannot be obtained.
(発明の目的)
本発明の目的は従来技術の前記欠点を解決したF級動作
の高効率電力増幅回路を提供するものである。(Object of the Invention) An object of the present invention is to provide a high-efficiency power amplifier circuit of class F operation that solves the above-mentioned drawbacks of the prior art.
(発明の構成)
本発明は、両端をそれぞれ高周波短絡した基本波の1/
2波長伝送線路と、前記1/2波長伝送線路の中点に出
力側を接続した増幅素子と、前記172波長伝送線路の
中点に一端を接続した基本波で共振する直列共振回路と
を備え、前記直列共振回路の他端から基本波出力を得る
ことを特徴とする電力増幅回路である。(Structure of the Invention) The present invention provides a 1/1/2 fundamental wave whose both ends are short-circuited with high frequency.
A 2-wavelength transmission line, an amplifying element whose output side is connected to the midpoint of the 1/2 wavelength transmission line, and a series resonant circuit that resonates with a fundamental wave and whose one end is connected to the midpoint of the 172-wavelength transmission line. , a power amplifier circuit characterized in that a fundamental wave output is obtained from the other end of the series resonant circuit.
(実施例)
第2図は、本発明の実施例を示す回路図であって、1/
2波長伝送線路5の両端a r bをそれぞれ高周波的
に短絡し、1/2波長伝送線路5の両端a。(Example) FIG. 2 is a circuit diagram showing an example of the present invention, and is 1/1
Both ends a and r b of the two-wavelength transmission line 5 are short-circuited at high frequency, and both ends a of the half-wavelength transmission line 5 are short-circuited.
bから1/4波長の個所、つまり中点Cに増幅素子例え
ば砒化ガリウム電界効果トランジスタ(GaAsFFT
) 4のドレインを接続するとともに直列共振回路6
の一端をも接続し、そして該直列共振回路6の他端を出
力端子7に接続しである。なお、1/2波長伝送線路5
の線路長は、入力基本波の該伝送線路5における波−長
の1/2であり、直列共振回路6は基本波を取シ出すだ
めの回路で基本波に共振する。An amplification element such as a gallium arsenide field effect transistor (GaAsFFT
) Connecting the drain of 4 and creating a series resonant circuit 6
One end of the series resonant circuit 6 is also connected to the output terminal 7, and the other end of the series resonant circuit 6 is connected to the output terminal 7. In addition, the 1/2 wavelength transmission line 5
The line length is 1/2 of the wavelength of the input fundamental wave on the transmission line 5, and the series resonant circuit 6 is a circuit for extracting the fundamental wave and resonates with the fundamental wave.
GaAsFFT 4に基本波信号が入力されると、前記
1/2波長伝送線路の両端は基本波、高調波に対して高
周波的に短絡されているので、172波長伝送線路の線
路上には基本波、2倍波に対して第3図のような電圧が
分布する。第3図において、a。When a fundamental wave signal is input to the GaAsFFT 4, since both ends of the 1/2 wavelength transmission line are short-circuited at high frequency with respect to the fundamental wave and harmonics, the fundamental wave appears on the 172-wavelength transmission line. , the voltage is distributed as shown in FIG. 3 for the second harmonic. In FIG. 3, a.
bは1/2波長伝送線路5の両端を示し、Cは中点を示
す。つまシ中点Cでは基本波に対し開放、2倍波に対し
て短絡となる。3次以上の高調波に関しても同様に中点
Cではすべての奇数次高調波に対して開放、すべての偶
数次高調波に対して短絡となる。本実施例はこのような
インピーダンス特性を持つ1/2波長伝送線路を第2図
に示すようにGaAsFET 4のドレインに負荷とし
て接続することにより、GaAsFET 4の電圧波形
を短形波、電流を半波整流正弦波となし、F級モードで
動作する高効率の電力増幅回路を実現している。なお、
希望する基本波は直列共振回路6を介して出力端子より
得る。b indicates both ends of the 1/2 wavelength transmission line 5, and C indicates the midpoint. At the center point C, the circuit is open to the fundamental wave and short-circuited to the second harmonic. Regarding harmonics of the third order or higher, similarly, at the midpoint C, there is an open circuit for all odd harmonics and a short circuit for all even harmonics. In this example, by connecting a 1/2 wavelength transmission line having such impedance characteristics to the drain of GaAsFET 4 as a load as shown in Fig. 2, the voltage waveform of GaAsFET 4 is changed to a rectangular wave and the current is changed to a half wave. This realizes a highly efficient power amplifier circuit that operates in class F mode using rectified sine waves. In addition,
The desired fundamental wave is obtained from the output terminal via the series resonant circuit 6.
(発明の効果)
本発明は172波長伝送線路の両端を高周波的に短絡し
、その中点に増幅素子の出力側に接続するとともに基本
波を取シ出すだめの直列共振回路を接続して増幅回路を
構成しているので、増幅素子の負荷は奇数次開放、偶数
次短絡となシ、所定のF級動作をする高効率の電力増幅
回路を得ることができる。前記電力増幅回路の使用によ
り放熱器やバッテリーを小さくでき、装置の小型化、軽
量化を計ることができる。(Effects of the Invention) The present invention short-circuits both ends of a 172-wavelength transmission line in terms of high frequency, connects the output side of an amplifying element to the midpoint, and connects a series resonant circuit for extracting the fundamental wave for amplification. Since the circuit is constructed, the load of the amplifying element is neither odd order open circuit nor even order short circuit, and a highly efficient power amplification circuit that performs a predetermined class F operation can be obtained. By using the power amplifier circuit, the heat sink and battery can be made smaller, and the device can be made smaller and lighter.
伝送線路上の電圧分布図である。
4− GaAsFET 、5−1/2波長伝送線路、6
・・直列共振回路、7・・・出力端子。
第3図
1 事件の表示
昭和58年 特 許 願第 209965 号2発明の
名称
電力増幅回路
3 補正をする者
事件との関係 特許出願人
住 所(〒105) 東京都港区虎ノ門1丁目7番12
号住 所(〒105) 東京都港区虎ノ門1丁目7香1
2号5、 補正ノ対−7明細書中「発明の詳細な説明」
の欄(1)明細書第1頁第17杓Hに「F級電力増幅器
」とあるのを「F級電力増幅器回路」ど補正する。
(2) 同書第2頁第111行目から第15行目に「高
調波に対して短絡」とあるのを「高調波に対して理想的
に短絡」と補正する。
(3) 同書第4頁第19行目に「短形波」とあるのを
「矩形波」と補正する。It is a voltage distribution diagram on a transmission line. 4- GaAsFET, 5-1/2 wavelength transmission line, 6
...Series resonant circuit, 7...Output terminal. Figure 3 1 Display of the case 1982 Patent Application No. 209965 2 Name of the invention Power amplifier circuit 3 Person making the amendment Relationship to the case Patent applicant Address (105) 1-7 Toranomon, Minato-ku, Tokyo 12
Address (105) 1-7 Kaoru, Toranomon, Minato-ku, Tokyo
No. 2 No. 5, “Detailed Description of the Invention” in the Amendment No. 7 Specification
Column (1) In the 17th column of the specification, page 1, ``F-class power amplifier'' should be corrected to ``F-class power amplifier circuit.'' (2) In the same book, page 2, lines 111 to 15, the phrase ``short-circuited to harmonics'' is corrected to ``ideally short-circuited to harmonics.'' (3) In the 19th line of page 4 of the same book, the phrase "rectangular wave" is corrected to "rectangular wave."
Claims (1)
線路と、前記1/2波長伝送線路の中点に出力側を接続
した増幅素子と、前記1/2波長伝送線路の中点に一端
を接続した基本波で共振する直列共振回路とを備え、前
記直列共振回路の他端から基本波出力を得ること特徴と
する電力増幅回路。A fundamental wave 1/2 wavelength transmission line whose both ends are short-circuited at a high frequency, an amplification element whose output side is connected to the midpoint of the 1/2 wavelength transmission line, and one end connected to the midpoint of the 1/2 wavelength transmission line. A power amplification circuit comprising a series resonant circuit that resonates with a connected fundamental wave, and obtaining a fundamental wave output from the other end of the series resonant circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20996583A JPS60103703A (en) | 1983-11-10 | 1983-11-10 | Power amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20996583A JPS60103703A (en) | 1983-11-10 | 1983-11-10 | Power amplifier circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60103703A true JPS60103703A (en) | 1985-06-08 |
Family
ID=16581607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20996583A Pending JPS60103703A (en) | 1983-11-10 | 1983-11-10 | Power amplifier circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60103703A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147921U (en) * | 1986-03-12 | 1987-09-18 | ||
JPS62147920U (en) * | 1986-03-12 | 1987-09-18 |
-
1983
- 1983-11-10 JP JP20996583A patent/JPS60103703A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147921U (en) * | 1986-03-12 | 1987-09-18 | ||
JPS62147920U (en) * | 1986-03-12 | 1987-09-18 |
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