JPS60101949A - Cleavage opening apparatus for semiconductor crystal plate - Google Patents
Cleavage opening apparatus for semiconductor crystal plateInfo
- Publication number
- JPS60101949A JPS60101949A JP58208240A JP20824083A JPS60101949A JP S60101949 A JPS60101949 A JP S60101949A JP 58208240 A JP58208240 A JP 58208240A JP 20824083 A JP20824083 A JP 20824083A JP S60101949 A JPS60101949 A JP S60101949A
- Authority
- JP
- Japan
- Prior art keywords
- crystal plate
- semiconductor crystal
- cleavage
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、半導体素子を作製する上で良く利用さJしる
半導体結晶板をへき開する装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for cleaving a semiconductor crystal plate, which is often used in manufacturing semiconductor devices.
(従来例の構成とその問題点)
近年、半導体結晶板へき開装置は、その必要性が増して
きている。半導体結晶板上に、結晶成長を行ない素子を
作製したり、電極を作製して素子を作製する場合、半導
体結晶板のへき開を、ひずみなく、清浄な環境下で行な
う事はM要である。(Structure of conventional example and its problems) In recent years, the need for semiconductor crystal plate cleaving devices has been increasing. When fabricating an element by growing crystals on a semiconductor crystal plate or fabricating an element by fabricating electrodes, it is essential that the semiconductor crystal plate be cleaved without strain and in a clean environment.
しかも、へき開時の条件が半導体結晶板での歩留シ、作
製した素子の特性の良し悪しに影響を及ぼす0
以下に、従来の半導体結晶板へき開装置について説明す
る。半導体結晶板の一部をへき開によシ切シ離す場合に
は、第1図に示すように、丑ずダイヤモンドカッター等
によシ、半導体結晶板1の端面1a、lニジ、溝2を2
〜3謳の長さ程度つける。Moreover, the conditions during cleaving affect the yield of the semiconductor crystal plate and the quality of the characteristics of the manufactured devices.A conventional semiconductor crystal plate cleaving apparatus will be described below. When separating a part of the semiconductor crystal plate by cleavage, as shown in FIG.
Write about the length of ~3 poems.
次に、その結晶板を第2図に示す、台12、スライドガ
ラス14、スライドガラス固定台16、などからなる半
導体結晶板へき開装置10の二枚のスライドガラス14
により挾み込む。その時、半導体結晶板1につけた溝2
が、スライドガラス端面14aに重なるようにする。ス
ライドガラス]4をし、っかりと固定し、半導体結晶板
1のスライドガラスに遠い方の端を下に押さえることに
より、溝2を含む平面でへへ開される。Next, the crystal plate is transferred to two glass slides 14 of a semiconductor crystal plate cleaving apparatus 10, which includes a table 12, a slide glass 14, a slide glass fixing table 16, etc., as shown in FIG.
Incorporate more. At that time, the groove 2 made in the semiconductor crystal plate 1
so that it overlaps the end surface 14a of the slide glass. A glass slide] 4 is fixed firmly, and the end of the semiconductor crystal plate 1 that is far from the slide glass is held down, thereby opening the semiconductor crystal plate 1 in a plane including the groove 2.
し、かじながら、上記の構成では、半導体結晶板1が、
台12上に落下した時に、結晶板表面全面が台12の面
12aに接触することになりその結果へ、き開時に出る
GaAsの細粒により、結晶板の表面を傷つけたシ、へ
き開裂置台の面上のホコリやコ゛ミが半導体結晶板に刺
着する、などの問題が生じる。そして、それが原因とな
シ半導体結晶板の平坦度や鏡面度が損われてし青い、半
導体結晶板を用いて作製した素子の電気特性、光学特性
、及びウェハ面内での歩留りを著しく損なうことになる
。However, in the above configuration, the semiconductor crystal plate 1 is
When the crystal plate falls onto the table 12, the entire surface of the crystal plate comes into contact with the surface 12a of the table 12, and as a result, the surface of the crystal plate is damaged by the fine particles of GaAs released during cleaving. Problems arise such as dust and dirt on the surface of the semiconductor crystal board sticking to the semiconductor crystal board. This causes a loss in the flatness and specularity of the semiconductor crystal plate, which significantly impairs the electrical properties, optical properties, and in-wafer yield of devices fabricated using the semiconductor crystal plate. It turns out.
(発明の目的)
本発明は、上記の問題点を解消するものであり、半導体
結晶板の表面の清浄度、鏡面度、平坦度を損なうことな
く、へき開を行なうことができる半導体結晶板へき開装
置を提供することを目的としたものである。(Object of the Invention) The present invention solves the above-mentioned problems, and provides a semiconductor crystal plate cleavage device that can perform cleavage without impairing the cleanliness, specularity, and flatness of the surface of the semiconductor crystal plate. The purpose is to provide the following.
(発明の構成)
上記目的を達成するために本発明の半導体へき開装置は
、半導体結晶板を両面から挾む挾持体と、上に凹なる面
を有する受台とを備え、前記半導体結晶板のへき開用が
前記凹面で保持される」:うにしたことを特徴とするも
のであり、この構成によって半導体結晶板の表面の清浄
度、鏡面度、平坦度を損なうことなく、へき開を行なう
ことができる。(Structure of the Invention) In order to achieve the above object, a semiconductor cleavage device of the present invention includes a clamping body that clamps a semiconductor crystal plate from both sides, and a pedestal having an upwardly concave surface, The cleavage is held by the concave surface, and with this configuration, cleavage can be performed without impairing the cleanliness, specularity, and flatness of the surface of the semiconductor crystal plate. .
(実施例の説明)
以下に本発明の実施例について、具体的に説明する。第
3図は本発明の実施例の一例を示す。半導体へき開装置
10は、台12、半導体結晶板1を挾みこむスライドガ
ラス14、スライドガラス固定台16を備え、台12上
の表面にはへき開面に平行な方向の深さが一定でへき開
面に垂直方向に深さが変化している凹面i3が設けられ
ている。(Description of Examples) Examples of the present invention will be specifically described below. FIG. 3 shows an example of an embodiment of the present invention. The semiconductor cleavage apparatus 10 includes a table 12, a slide glass 14 for sandwiching the semiconductor crystal plate 1, and a slide glass fixing table 16. The surface of the table 12 has a constant depth in the direction parallel to the cleavage plane. A concave surface i3 whose depth varies in the vertical direction is provided.
このため、へき間抜、半導体結晶板1が落下した場合、
半導体結晶板1の表面1bは、へき開装置の台12上の
面と、二本の直線で接する。しかも、そのうちの1本は
、半導体結晶板表面1bとへき開面の交わる直線であシ
、半導体結晶板表面の清浄度、鏡面度、平坦度は、へき
開の前後でほとんど変わらない。Therefore, if there is a gap or the semiconductor crystal board 1 falls,
The surface 1b of the semiconductor crystal plate 1 is in contact with the surface on the table 12 of the cleavage device through two straight lines. Moreover, one of the lines is a straight line where the semiconductor crystal plate surface 1b and the cleavage plane intersect, and the cleanliness, specularity, and flatness of the semiconductor crystal plate surface are almost unchanged before and after the cleavage.
第4図は本発明の他の実施例として、前記凹面を球面と
した例を示したものである。この実施例の場合、凹面工
3の径方向の寸法は、図示のようにへき開した半導体結
晶板1の長さ寸法よシも大きく、シかも、その一部がス
ライドガラス14の下方に位置するようにしている。こ
のようにした場合、へき間抜の半導体結晶板1は第4図
(b)に示すようにその全部が凹面13内に落下するこ
とになシ、シたがって、その接触部も四隅の点接触とな
るので半導体結晶板表面1bは完全に保護されることに
なる。FIG. 4 shows another embodiment of the present invention in which the concave surface is a spherical surface. In this embodiment, the radial dimension of the concave surface treatment 3 is larger than the length dimension of the cleaved semiconductor crystal plate 1 as shown in the figure, and a portion of it may be located below the slide glass 14. That's what I do. In this case, as shown in FIG. 4(b), the entire semiconductor crystal plate 1 with a gap will not fall into the concave surface 13, and therefore, the contact portions will also be placed at the four corner points. Since the contact occurs, the semiconductor crystal plate surface 1b is completely protected.
第5図は、さらに本発明の他の実施例を示しだもので、
この例は四面13を複数個の平面で形成するようにした
ものでアシ、凹面13をこのようにしても第3図の場合
とほぼ同様の効果が得られ、その加工も容易である。FIG. 5 further shows another embodiment of the present invention,
In this example, the four surfaces 13 are formed by a plurality of planes, and even if the reeds and concave surfaces 13 are formed in this manner, substantially the same effect as in the case of FIG. 3 can be obtained, and the processing is also easy.
(発明の効果)
以上のように、本発明の半導体結晶板へき開装置は半導
体結晶板が落下する台上に凹面が設けられており、これ
により半導体結晶板表面の清浄度。(Effects of the Invention) As described above, in the semiconductor crystal plate cleaving apparatus of the present invention, a concave surface is provided on the table on which the semiconductor crystal plate falls, thereby improving the cleanliness of the semiconductor crystal plate surface.
鏡面度、平坦度がそこなわれることがなく、その実用的
効果は大なるものがある。The specularity and flatness are not impaired, and the practical effect is great.
第1図はへき開作業工程の1つを説明するだめの半導体
結晶板の平面図、第2図は半導体へき開装置の従来例を
示す断面図、第3図(a) 、 (b)は本発明の一実
施例としての半導体へき開装置のそれぞれへき開削、へ
き間抜を示す断面図、第4図(a)。
(1,) 、 (c)は本発明の他の実施例としての半
導体へき開装置のそノシぞノシへき開削、へき間抜を示
す断面図、」二面図、第5図(a) l (b)はさら
に本発明の他の実施例としての半導体へき開装置のそれ
ぞれへき開削、へき間抜を示ず断面図である。
1・・・半導体結晶板、10・・・半導体へき開装置、
12・・・台、13・・・凹面、14・・・スライドガ
ラス、16・・・スライドガラス固定台。
第1図
1a
第2図
第3図
(0)
(b)
第4図
(a)
(b)
第5図
(a)
■
(b)Fig. 1 is a plan view of a semiconductor crystal plate for explaining one of the cleaving operations, Fig. 2 is a sectional view showing a conventional example of a semiconductor cleaving device, and Figs. 3 (a) and (b) are the present invention. FIG. 4(a) is a cross-sectional view showing cleavage cutting and cleavage thinning of a semiconductor cleavage apparatus as one embodiment of the present invention. 5(a) l b) is a cross-sectional view of a semiconductor cleavage apparatus as another embodiment of the present invention without showing cleavage and cleavage. 1... Semiconductor crystal plate, 10... Semiconductor cleavage device,
12...stand, 13...concave surface, 14...slide glass, 16...slide glass fixing stand. Figure 1 1a Figure 2 Figure 3 (0) (b) Figure 4 (a) (b) Figure 5 (a) ■ (b)
Claims (3)
面を有する受台とをそなえ、前記半導体結晶板のへき開
用が前記凹面で保持されることを特徴とする半導体結晶
板へき開装置。(1) Semiconductor crystal plate cleavage device comprising a clamping body that holds a semiconductor crystal plate from both sides and a pedestal having an upwardly concave surface, and the semiconductor crystal plate is held by the concave surface. Device.
1請求範囲第(1)項記載の半導体結晶板へき開装置。(2) A special feature characterized by a concave surface forming a spherical surface.
1. A semiconductor crystal plate cleaving device according to claim (1).
とする肪γ1゛請求範囲第(1)項記載の半導体結晶板
へき開装置。(3) The semiconductor crystal plate cleaving device according to claim (1), wherein the concave surface is composed of a plurality of flat surfaces.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208240A JPS60101949A (en) | 1983-11-08 | 1983-11-08 | Cleavage opening apparatus for semiconductor crystal plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208240A JPS60101949A (en) | 1983-11-08 | 1983-11-08 | Cleavage opening apparatus for semiconductor crystal plate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60101949A true JPS60101949A (en) | 1985-06-06 |
Family
ID=16552972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58208240A Pending JPS60101949A (en) | 1983-11-08 | 1983-11-08 | Cleavage opening apparatus for semiconductor crystal plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60101949A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4828953A (en) * | 1971-08-19 | 1973-04-17 | ||
JPS4933185U (en) * | 1972-06-23 | 1974-03-23 | ||
JPS5130915U (en) * | 1974-08-28 | 1976-03-05 |
-
1983
- 1983-11-08 JP JP58208240A patent/JPS60101949A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4828953A (en) * | 1971-08-19 | 1973-04-17 | ||
JPS4933185U (en) * | 1972-06-23 | 1974-03-23 | ||
JPS5130915U (en) * | 1974-08-28 | 1976-03-05 |
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