JPS5996705A - Manufacture of magnetic recording medium - Google Patents
Manufacture of magnetic recording mediumInfo
- Publication number
- JPS5996705A JPS5996705A JP57206740A JP20674082A JPS5996705A JP S5996705 A JPS5996705 A JP S5996705A JP 57206740 A JP57206740 A JP 57206740A JP 20674082 A JP20674082 A JP 20674082A JP S5996705 A JPS5996705 A JP S5996705A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetic
- nickel
- cobalt
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 43
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 18
- 239000010941 cobalt Substances 0.000 claims abstract description 18
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052742 iron Inorganic materials 0.000 claims abstract description 18
- 239000003446 ligand Substances 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 239000000696 magnetic material Substances 0.000 claims description 31
- 150000004696 coordination complex Chemical class 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 125000004434 sulfur atom Chemical group 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 2
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 229960003540 oxyquinoline Drugs 0.000 abstract 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 25
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- 239000006249 magnetic particle Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- -1 sodium halogens Chemical class 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 150000004700 cobalt complex Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- JMDHEFYLRULTSM-UHFFFAOYSA-N 1,3-diphenyl-2-sulfanylidenepropane-1,3-dione Chemical compound C=1C=CC=CC=1C(=O)C(=S)C(=O)C1=CC=CC=C1 JMDHEFYLRULTSM-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000981595 Zoysia japonica Species 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000012279 sodium borohydride Substances 0.000 description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WAKHLWOJMHVUJC-SQFISAMPSA-N (2z)-2-hydroxyimino-1,2-diphenylethanol Chemical compound C=1C=CC=CC=1C(=N/O)/C(O)C1=CC=CC=C1 WAKHLWOJMHVUJC-SQFISAMPSA-N 0.000 description 1
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 235000019658 bitter taste Nutrition 0.000 description 1
- VDTVZBCTOQDZSH-UHFFFAOYSA-N borane N-ethylethanamine Chemical compound B.CCNCC VDTVZBCTOQDZSH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 150000004697 chelate complex Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- NZZIMKJIVMHWJC-UHFFFAOYSA-N dibenzoylmethane Chemical compound C=1C=CC=CC=1C(=O)CC(=O)C1=CC=CC=C1 NZZIMKJIVMHWJC-UHFFFAOYSA-N 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000008098 formaldehyde solution Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 235000001727 glucose Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- MHTSJSRDFXZFHQ-UHFFFAOYSA-N quinoline-8-thiol Chemical compound C1=CN=C2C(S)=CC=CC2=C1 MHTSJSRDFXZFHQ-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Hard Magnetic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、磁気記録媒体の製造方法に関し、とくに、磁
気テープ、磁気ディスク、磁気カードなど磁気記録を用
途とする磁性体を基体上に形成させる製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a magnetic recording medium, and particularly to a method of manufacturing a magnetic material used for magnetic recording such as a magnetic tape, a magnetic disk, and a magnetic card on a substrate.
従来、磁気記録媒体は、(イ)ガンマ−三酸化第二鉄γ
−FezO3など磁性体の微細針状粉末をバインダーと
する高分子の溶液中に混合分散し、この溶液を電気絶縁
性の基体上にドクターブレード法などの方法によって塗
布し、その後乾燥して基体上に磁性粉末層を形成する分
散液のコーテング方法、(ロ)特殊な化学的前処理によ
って活性化された基体を無電解メッキ液中に導入浸漬し
、化学反応によって磁性体層を基体上に形成する無電解
メッキ法、(ハ)磁性金属の真空蒸着によって基体上に
磁性胤を形成する気相メッキ法などの製造方法によって
いる0
磁気記録を目的とする場合に9記録畜度を大きくするた
めに極めて高い均一性と比較的大きい保磁力9周波数特
性の向上のために磁性粉の微細さ、出力特性の向上のた
め大きい飽和残留磁束密度が要求さ庇る。ある種の磁性
体材料でこの要求を満足するためには、(a)磁性体粒
子の短径rを小さくシ、粒子の長径lを長くする、つま
シ針状比l/γが大きいこと、(b)磁性体粒子を磁化
方向に配向させること、および(C1このような磁性体
粒子を基体上に薄く、かつ均一に形成させることが重要
となる。Conventionally, magnetic recording media use (a) gamma - ferric trioxide γ
- Fine acicular powder of magnetic material such as FezO3 is mixed and dispersed in a solution of polymer as a binder, this solution is applied onto an electrically insulating substrate by a method such as a doctor blade method, and then dried and applied onto the substrate. (b) A substrate activated by special chemical pretreatment is introduced into an electroless plating solution and immersed, and a magnetic layer is formed on the substrate by a chemical reaction. (c) Vapor-phase plating method in which magnetic seeds are formed on the substrate by vacuum deposition of a magnetic metal. Extremely high uniformity and relatively large coercive force 9 Fineness of magnetic powder is required to improve frequency characteristics, and large saturated residual magnetic flux density is required to improve output characteristics. In order to satisfy this requirement with a certain type of magnetic material, (a) the short axis r of the magnetic particles should be small, the long axis l of the particles should be long, and the acicular ratio l/γ should be large; (b) It is important to orient the magnetic particles in the magnetization direction and (C1) to form such magnetic particles thinly and uniformly on the substrate.
従来の製造方法、例えば上記(イ)の分散溶液のコーテ
ング方法によれば、たとえl/γの大きな磁性体粒子を
使用しても基体上に薄く、かつ均一に磁性体粒子を塗布
形成させることは極めて困難な欠点がある。また、従来
の製造方法の上記(口jおよび←慢の方法では、l/γ
の大きい磁性体を形成さ ″せることが非常に困難であ
る。そのため、極めて特殊な製造方法を用いなければな
らないため量産性に欠ける欠点がある。さらに、上記(
ロ)の製造方法である無電解メッキ法では、磁性体を基
体上に形成させるに必要な時間、つまり、反応速度が著
しく低いこと、また、磁性体が基体上に無秩序に形成さ
れるため磁気特性に劣る欠点があった。According to conventional manufacturing methods, for example, the dispersion solution coating method described in (a) above, even if magnetic particles with a large l/γ are used, it is not possible to coat and form magnetic particles thinly and uniformly on a substrate. has extremely difficult drawbacks. In addition, in the conventional manufacturing method described above (l/γ
It is extremely difficult to form a magnetic material with a large
In the electroless plating method, which is the manufacturing method for (b), the time required to form the magnetic material on the substrate, that is, the reaction rate, is extremely low. It had the disadvantage of inferior characteristics.
本発明の目的は、このような従来欠点を除去した高性能
かつ量産性に優れた磁気記録媒体の製造方法を提供する
ことにある。An object of the present invention is to provide a method for manufacturing a magnetic recording medium that eliminates such conventional drawbacks and has high performance and excellent mass productivity.
本発明によれば、窒素、酸素または硫黄の原子を含む配
位子と鉄、ニッケル、およびコバルトの少なくとも一つ
から選らばれた金属のイオンを主成分とする金属錯体の
溶液を基体上に付着・乾燥させて上記金属錯体を層状に
付着形成する工程と、上記基体上に付着形成した金属錯
体を還元する工程と、還元した金属錯体を反応の核とし
て磁界印加中で還元雰囲気によって、鉄、ニッケル、お
よびコバルトなどのイオンを還元して上記基体上に鉄、
ニッケル、コバルトを主成分とする磁性体を形成する工
程を含むことを特徴とする磁気記録媒体の製造方法が得
られる。According to the present invention, a solution of a metal complex mainly composed of a ligand containing nitrogen, oxygen, or sulfur atoms and ions of a metal selected from at least one of iron, nickel, and cobalt is deposited on a substrate.・A step of drying and forming the metal complex in a layered manner; a step of reducing the metal complex adhered and formed on the substrate; and a step of reducing iron, iron, By reducing ions such as nickel and cobalt, iron and
A method for manufacturing a magnetic recording medium is obtained, which includes a step of forming a magnetic material containing nickel and cobalt as main components.
本発明による磁気記録媒体の製造方法には次のような特
徴がある。すなわち、
1)基体の材料は、プラスチックやセラミックスなど電
気絶縁性の材料または、アルミ、銅などの電気良導性の
材料を使用することができる。The method for manufacturing a magnetic recording medium according to the present invention has the following features. That is: 1) As the material of the substrate, an electrically insulating material such as plastic or ceramics, or a electrically conductive material such as aluminum or copper can be used.
11)基体上に金属錯体を形成し、これを反応の核とし
て磁性体粒子を成長させることができる。11) A metal complex is formed on a substrate, and magnetic particles can be grown using this as a reaction nucleus.
1ii) 磁性体粒子の成長時に磁界を利用して成長す
る磁性粒子の針状形成とその配向を規制することができ
る。1ii) When growing magnetic particles, a magnetic field can be used to control the needle-like formation and orientation of the growing magnetic particles.
以上の三つを本発明の基本的な特徴としているが、この
特徴を一層効果的に発現させるため゛に次のような方法
が加わる。すなわち、
tv) 使用する全島錯体をあらかじめ形成し、これ
を基体上に形成する。形成法としては、金属錯体の溶液
を吹き付け、流延、印刷などの方法によシ基体上に塗布
したり、あるいは、金属錯体の溶液中に基体を浸漬させ
るなど溶液を用いる方法がある。この場合、金属錯体の
基体への接着を向上させるため高分子などをバインダー
として加えることも有効である。そのほか、金属錯体を
蒸着やスパッターなどの方法によって形成することも有
効である。The above three are the basic features of the present invention, but the following methods are added to make these features more effective. That is, tv) Preform the whole island complex to be used and form it on the substrate. The formation method includes applying a solution of the metal complex onto the substrate by methods such as spraying, casting, or printing, or using a solution such as immersing the substrate in the solution of the metal complex. In this case, it is also effective to add a polymer or the like as a binder to improve the adhesion of the metal complex to the substrate. In addition, it is also effective to form the metal complex by methods such as vapor deposition and sputtering.
■)基体上に付着形成した金属錯体を還元させる方法は
、次のような還元雰囲気を用いて実施することかできる
。(2) The method of reducing the metal complex deposited on the substrate can be carried out using the following reducing atmosphere.
力 次亜リン酸ナトリウム、水素化ホウ素ナトリウム、
ジメチルアミンボラン、ジエチルアミンボラン、ヒドラ
ジン、ホルムアルデヒド、ブドウ糖、ロッシェル塩、蟻
酸などの還元剤を含む溶液の雰囲気(化学還元法)。Power Sodium hypophosphite, Sodium borohydride,
Atmosphere of a solution containing reducing agents such as dimethylamine borane, diethylamine borane, hydrazine, formaldehyde, glucose, Rochelle's salt, formic acid, etc. (chemical reduction method).
イ)鉄、ニッケルおよびコバルトよシ卑な金属又は金属
錯体のイオンを含む溶液雰囲気(酸化還元電位の相違に
よる還元法)。b) A solution atmosphere containing ions of metals or metal complexes less base than iron, nickel, and cobalt (reduction method based on differences in redox potential).
〜 つ)紫外線などによる光照射雰囲気(光還元法)。~ 1) Light irradiation atmosphere using ultraviolet rays (photoreduction method).
工)水素ガスなどの還元性を有するガスの雰囲気。Engineering) Atmosphere of reducing gas such as hydrogen gas.
なお、これらの還元雰囲気は単独でも良好だが、それぞ
れを組み合わせた還元雰囲気による方法でも良好な結果
が得られる。Note that although these reducing atmospheres are good when used alone, good results can also be obtained by a method using a reducing atmosphere in combination with each other.
vD 還元した金属錯体を反応の核として磁界印加中
で鉄、ニッケル、およびコバルトなどのイオンを還元し
て基体上に鉄、ニッケル、コバルトを主成分とする磁性
体を形成する工程の還元反応は、上記V)と同様な還元
雰囲気を用いて実施することができる。vD The reduction reaction is a process in which ions such as iron, nickel, and cobalt are reduced while a magnetic field is applied using the reduced metal complex as a reaction nucleus to form a magnetic material mainly composed of iron, nickel, and cobalt on a substrate. , can be carried out using the same reducing atmosphere as in V) above.
金属錯体を形成する配位子としては、塩素、臭 ′
素ナトハロゲン、シアン、およびアンモニウム塩どを含
むことは勿論だが、窒素N、酸素Oおよび硫黄Sなどの
原子の不対電子に基因するキレート型配位子を用いるこ
とに本発明の特徴がある。このキレート型配位子の配位
の仕方としては、錯形成する金属種によっても異なるが
、0−0.0−N。Ligands that form metal complexes include chlorine, odor
The present invention is characterized by the use of chelate-type ligands based on unpaired electrons of atoms such as nitrogen (N), oxygen (O), and sulfur (S), although they naturally include sodium halogens, cyanide, and ammonium salts. The manner of coordination of this chelate type ligand is 0-0.0-N, although it varies depending on the metal species forming the complex.
0−8 、 N−N 、 N−8、8−8、などの配位
型がある。There are coordination types such as 0-8, N-N, N-8, and 8-8.
本発明のように、錯体の金属が、鉄、ニッケルおよびコ
バルトなどの鉄族金属の場合、これらの金属とキレート
錯体を形成する配位子としては、例えば、アセチルアセ
ントン、ジベンゾイルメタン。As in the present invention, when the metal of the complex is an iron group metal such as iron, nickel, and cobalt, examples of the ligand that forms a chelate complex with these metals include acetylacecentone and dibenzoylmethane.
1.1.1−トリフルオロ−3−(2−テノイル)アセ
トン、N−二トロンフェニルヒドロキンルアミンのアン
モ−ラム塩、N−ベンゾイル−N−7エニルヒドロキゾ
ルアミン、1−ニトロン−2−ナフトールなどで代表さ
れるO−0配位型、8−キノリツール、α−ベンゾイン
オキシムなどで代表される0−N配位型、モノチオ・ジ
ベンゾイルメタン、1,1.1− トリフルオロ−3
−(2−チオテノイル)アセトンなどで代表されるO−
8配位型ジメチルグリオキシム、α−ベンジルオキシム
。1.1.1-Trifluoro-3-(2-thenoyl)acetone, ammorum salt of N-nitrone phenylhydrokylamine, N-benzoyl-N-7enylhydroxolamine, 1-nitrone-2- O-0 coordination type represented by naphthol etc., 0-N coordination type represented by 8-quinolitool, α-benzoin oxime etc., monothio-dibenzoylmethane, 1,1.1-trifluoro-3
-O- represented by (2-thiothenoyl)acetone etc.
8-coordinated dimethylglyoxime, α-benzyloxime.
ジフェニルチオカルバゾンなどで代表されるN−N配位
型、8−キノリンチオールなどで代表されるN−8配位
型、ジエチルジチオカルバミン酸のナトリウム塩やアン
モニウム塩などで代表されるS−8配位型、そのほか、
1−(2−ピリジルアゾ)−2−す7ドル々どで代表さ
れる0−N−N配位型、 EDTAなどで代表される多
座配位型などが有効である。N-N coordination type such as diphenylthiocarbazone, N-8 coordination type such as 8-quinolinthiol, and S-8 coordination type such as sodium salt and ammonium salt of diethyldithiocarbamic acid. position type, etc.
Effective examples include the 0-N-N coordination type represented by 1-(2-pyridylazo)-2-su7doldo, and the multidentate coordination type represented by EDTA.
基体上にこの種の配位子、金属錯体を形成する場合、配
位子、金ha体だけの場合でも良いが、基板との接着性
を向上するため、■高分子などのバインダーを添加する
方法、■配位機能をもったある種の化合物を高分子の主
鎖または側鎖に設けた、いわゆる配位高分子を用いる方
法、■配位子と金属の錯形成によって架橋型の高分子量
の錯体になる、いわゆる架橋配位子を用いる方法などに
よっても有効な結果が得られた。When forming this type of ligand and metal complex on a substrate, it is possible to use only the ligand and gold halide, but in order to improve adhesion to the substrate, a binder such as a polymer is added. Methods: ■ A method using a so-called coordination polymer, in which a certain type of compound with a coordination function is attached to the main chain or side chain of the polymer, ■ A cross-linked type of high molecular weight by complex formation of a ligand and a metal. Effective results were also obtained by methods using so-called bridging ligands, which form complexes of .
本発明では、基体上に形成される配位子や金属錯体の表
面密度によって磁性体の形成密度を制御できる特徴があ
る。磁気記録の感度や分解精度は、基板上の磁性体の形
成密度に著しく影炉される。The present invention is characterized in that the formation density of the magnetic material can be controlled by the surface density of the ligand or metal complex formed on the substrate. The sensitivity and resolution accuracy of magnetic recording are significantly influenced by the density of magnetic material formed on the substrate.
通常の無電解メッキ法や蒸着法などの従来の製造方法で
は、メッキ液組成などメッキ条件や蒸着条件によって磁
性体の形成密度を制御しているが、制御方法が極めて回
前Eであシ再現性に欠く量産しにくい欠点のほかに、形
成された磁性体の磁気特性も比較的悪い。しかし、本発
明によれは、基体上に形成する配位子や金属錯体の表面
密度をあらかじめ制御することができるため、その後に
形成される磁性体は、配位子や金属錯体の表面密度に比
例して成長してくるので磁性体の形成@度を比較的自由
に制御したシ、規定することが容易にできる利点がある
。さらに、本発明によれば金属錯体を核とL7て磁性体
が成長するため針状比の大きい磁性体が得られ、1だ、
その成長方向を磁場によって一次元的に規制し配向させ
ることも加わるため磁気特性にすぐれた磁性体が形成で
きる。In conventional manufacturing methods such as normal electroless plating and vapor deposition methods, the density of magnetic material formed is controlled by plating conditions such as plating solution composition and vapor deposition conditions, but the control method is extremely difficult to reproduce. In addition to the disadvantage that it lacks properties and is difficult to mass-produce, the magnetic properties of the formed magnetic material are also relatively poor. However, according to the present invention, the surface density of the ligands and metal complexes formed on the substrate can be controlled in advance. Since the magnetic material grows proportionally, it has the advantage that the degree of formation of the magnetic material can be controlled and defined relatively freely. Furthermore, according to the present invention, since the magnetic material grows with the metal complex as the nucleus and L7, a magnetic material with a large acicular ratio can be obtained, which is 1.
Since the growth direction is one-dimensionally regulated and oriented by a magnetic field, a magnetic material with excellent magnetic properties can be formed.
本発明によれは、形成される磁性体は、鉄、ニッケルお
よびコバルトの強磁性金属またはこれらの金属の合金組
成を主成分とするが、磁性体の磁気特性や耐摩耗性など
機械的性質を向上させるため、リンP、ホウ素B、寿ど
の非金属元素やタングステンW、マンガンMn、レニウ
ムRe、スズSn。According to the present invention, the formed magnetic material is mainly composed of ferromagnetic metals such as iron, nickel, and cobalt, or alloy compositions of these metals, but the magnetic material has mechanical properties such as magnetic properties and wear resistance. In order to improve the performance, nonmetallic elements such as phosphorus P, boron B, and longevity, tungsten W, manganese Mn, rhenium Re, and tin Sn are used.
亜鉛Zn、バナジウムV、銅Cuなどの金属元素を含む
ことも有効である。It is also effective to include metal elements such as zinc Zn, vanadium V, and copper Cu.
本発明によれば、用いる金属錯体の金属が、形成される
磁性体の主成分元素である鉄、ニッケル。According to the present invention, the metal of the metal complex used is iron or nickel, which is the main component element of the magnetic material to be formed.
コバルトと同−金属であるため、■磁性体が金属錯体を
核として成長しやすいこと、■磁性体の組成制御が容易
であること、捷た、■得られた磁性体の磁気特性が良好
なことなどの利点がある。Because it is the same metal as cobalt, 1) the magnetic material can easily grow with the metal complex as the nucleus, 2) the composition of the magnetic material can be easily controlled, 1) the resulting magnetic material has good magnetic properties. There are advantages such as:
以下に、本発明を実施例によシ詳細に説明する。The present invention will be explained in detail below using examples.
塩化ニッケルNiCl2のIM水溶液100mA’を調
製し、これに緩衝溶液を加えてpHを5〜6に調節する
。このニッケル水溶液中にアセチルアセトンの0.1M
ベンゼン溶液50m1を加え入れ、両液を充分攪拌混合
するとベンゼル相にアセチルアセトンN1(n)錯体が
分離形成される。水相と分離したアセチルアセトンN
i (Ill錯体のベンゼン溶液中にポリメタアクリル
醒メチルを加え入れて液解するまで充分攪拌する。この
溶液を膜厚的20μmのポリエチレンテレフタレートの
フィルムの片面上に吹き付けたのち圧縮空気で流延し、
フィルム上のベンゼン溶液を薄くかつ均一に塗布し、乾
燥する。A 100 mA' IM aqueous solution of nickel chloride NiCl2 is prepared, and a buffer solution is added thereto to adjust the pH to 5-6. 0.1M of acetylacetone in this nickel aqueous solution
When 50 ml of benzene solution is added and both liquids are sufficiently stirred and mixed, an acetylacetone N1(n) complex is separated and formed in the benzene phase. Acetylacetone N separated from aqueous phase
i (Add methyl polymethacrylate into a benzene solution of Ill complex and stir thoroughly until it dissolves. Spray this solution onto one side of a polyethylene terephthalate film with a film thickness of 20 μm, and then cast with compressed air. death,
Apply the benzene solution thinly and evenly on the film and dry.
このようにして、アセチルアセトンの金属錯体が形成さ
れたフィルムを、pH6に調節された0、5Mの次亜リ
ン酸ナトリウム水溶液とヒドラジン水溶液、およびpH
4に調節された水素化ホウ素ナトリウムの水溶液中にそ
れぞれ浸漬する。いづれの場合も、フィルム上の金属錯
体が還元されて金属錯体の着色が消色してくる。全島錯
体の還元反応は、上述したような還元液中に浸漬させる
方法のほか、還元液をスプレー状にしてフィルム上の金
属錯体に吹き付ける方法を行なったが、いづれの場合も
金属錯体の還元が認められた。In this way, the film in which the metal complex of acetylacetone was formed was mixed with a 0.5 M aqueous sodium hypophosphite solution and a hydrazine aqueous solution adjusted to pH 6, and
4 in an aqueous solution of sodium borohydride. In either case, the metal complex on the film is reduced and the coloring of the metal complex disappears. For the reduction reaction of the whole island complex, in addition to the method of immersing it in the reducing solution as described above, the method of spraying the reducing solution onto the metal complex on the film was carried out, but in both cases, the reduction of the metal complex was difficult. Admitted.
以上のようにして、フィルム上の金属錯体を還元したの
ち、フィルムを第1表のような組成と濃度の液中にそれ
ぞれ入れ第1表のような反応条件で磁界的10000’
e をかけて約1分間反応させ、フィルム試料4種類を
作製した。反応稜、それぞれのフィルム試料をとシ出し
、充分水洗し、乾燥した。なお、磁界の印加方向は、フ
ィルム面内で磁気特性評価時の磁化方向に平行になるよ
うにつねに加えた。各々のフィルム試料をSEMで観察
した結果、磁性体はフィルム上の金属錯体を核として磁
性体粒子が針状に連鎖した状態で磁化方向に配向、成長
していた。また、針状に連鎖した磁性体をとり出し、X
MAで分哲したところ第2表に示したような組成である
ことが判明した。次に、それぞれの試料について磁気特
性を測定した結果、第2表のような良好な特性を示した
。After reducing the metal complex on the film as described above, the film was placed in a solution having the composition and concentration as shown in Table 1, and a magnetic field of 10,000' was applied under the reaction conditions as shown in Table 1.
E was applied to react for about 1 minute, and four types of film samples were prepared. The reaction ridge and each film sample were taken out, thoroughly washed with water, and dried. Note that the direction of application of the magnetic field was always parallel to the magnetization direction at the time of evaluating the magnetic properties within the plane of the film. As a result of observing each film sample with an SEM, it was found that the magnetic particles were oriented and grown in the magnetization direction in a state in which magnetic particles were chained in an acicular shape with the metal complex on the film as a nucleus. In addition, we took out a magnetic substance chained in a needle shape and
When analyzed by MA, it was found that the composition was as shown in Table 2. Next, the magnetic properties of each sample were measured, and the results showed good properties as shown in Table 2.
また、磁性体の成長反応時に印加する磁界の影響を検討
したところ、少なくとも100〜30000e第1表
〔実施例2〕
塩化コバルトCoC42の1M水溶液100m/を2個
調製し、各々緩衝溶液によってpHを9〜10および5
〜10に調整する。pHが9〜10および5〜10のコ
バルト水溶液中に、それぞれモノチオ・ジベンゾイルメ
タンの1lflトルエン溶液、および8−キノリツール
(オキシノ)の1Mクロロホルム溶液を加え入れて充分
攪拌すると有機相にコバルト錯体が形成される。四塩化
炭素溶液およびクロロホルム溶液にそれぞれポリスチレ
ン、およびポリビニルブチラールを加え入れて溶解する
まで充分に攪拌混合する。この溶液中にそれぞれポリエ
チレンテレフタレートのフィルムを浸漬し、乾燥すると
フィルム上にコバルト錯体の薄層が均一に形成される。In addition, we investigated the influence of the magnetic field applied during the growth reaction of the magnetic material, and found that it was at least 100 to 30,000e. 9-10 and 5
Adjust to ~10. When a 1fl toluene solution of monothio dibenzoylmethane and a 1M chloroform solution of 8-quinolitool (Oxino) are added to cobalt aqueous solutions with pHs of 9-10 and 5-10, respectively, and stirred thoroughly, a cobalt complex is added to the organic phase. It is formed. Add polystyrene and polyvinyl butyral to the carbon tetrachloride solution and chloroform solution, respectively, and stir and mix thoroughly until dissolved. A film of polyethylene terephthalate is immersed in each of these solutions and when dried, a thin layer of cobalt complex is uniformly formed on the film.
コバルト錯体が形成されたフィルムに5KWの超高圧水
銀灯を約3 Q sec照射すると錯体色が消失し、コ
バルトが還元された。この状態のフィルムを第1表に示
すような組成と濃度の液中に入れ、第1表に示したよう
な反応条件下で磁場約10000eをフィルム面内で磁
化方向にかけて反応させると、ただちにフィルム上の錯
体を核として磁化方向に針状連鎖形状の磁性体が形成し
てくる。反応稜、水洗、乾燥し実施例1と同様にして磁
性体の組成と磁気特性を測定した結果、第3表および第
4表に示すような値が得られた。When the film on which the cobalt complex was formed was irradiated with a 5 KW ultra-high pressure mercury lamp for about 3 Q seconds, the complex color disappeared and the cobalt was reduced. When the film in this state is placed in a solution with the composition and concentration shown in Table 1, and a magnetic field of approximately 10,000 e is applied in the film plane in the direction of magnetization under the reaction conditions shown in Table 1, the film immediately changes. With the above complex as a core, a magnetic substance in the form of an acicular chain is formed in the direction of magnetization. The reaction edge was washed with water, dried, and the composition and magnetic properties of the magnetic material were measured in the same manner as in Example 1. As a result, the values shown in Tables 3 and 4 were obtained.
第3表
第4表
〔実施例3〕
塩化ニッケルNiC4とα−ペンジルジオキンムIM水
溶液400mlを調製し、緩衝溶液によってpH8〜1
1に調節する。この水溶液クロロホルム100m7!を
加え入れて充分混合攪拌すると、有機相にニッケル錯体
が抽出される。クロロホルム溶液にポリメチルメタアク
リレートおよびアント2キノンを加えて溶解するまで充
分攪拌する。ポリエチレンテレフタレートのシート上に
この溶液を塗布後乾燥してシート上にニッケル錯体を付
着形成する。Table 3 Table 4 [Example 3] 400 ml of an aqueous solution of nickel chloride NiC4 and α-penzyldioquine IM was prepared, and the pH was adjusted to 8 to 1 using a buffer solution.
Adjust to 1. This aqueous solution of chloroform is 100m7! When added and thoroughly mixed and stirred, the nickel complex is extracted into the organic phase. Add polymethyl methacrylate and anth-2quinone to the chloroform solution and stir thoroughly until dissolved. This solution is applied onto a polyethylene terephthalate sheet and dried to form a nickel complex on the sheet.
ニッケル錯体が付着・形成したシートに6KWの水銀灯
で約3oomJ/cIrL2の露光量を照射した。The sheet on which the nickel complex was attached and formed was irradiated with an exposure amount of about 3 oomJ/cIrL2 using a 6 KW mercury lamp.
アントラキノンの増感作用にょシニッケル錯体はただち
に還元されて消色する。還元されたニッケル錯体力;付
着形成したシートを第5表に示したような液中に入れて
、第5表に示された反応条件下で磁場約10000e
′t−シート面内で磁化方向にかけて反応させた。反応
後、充分水洗し、乾燥した。Sensitizing effect of anthraquinone The nickel complex is immediately reduced and loses its color. Reduced nickel complex force: The adhered sheet is placed in a liquid as shown in Table 5, and a magnetic field of about 10,000 e is applied under the reaction conditions shown in Table 5.
The reaction was carried out in the magnetization direction within the t-sheet plane. After the reaction, it was thoroughly washed with water and dried.
実施例1と同様にして磁性体の組成と磁気特性を第5表
および第6表に示した。The composition and magnetic properties of the magnetic material are shown in Tables 5 and 6 in the same manner as in Example 1.
第5表
第6表
〔実施例4〕
鉄の1−(2−ピリジルアゾ)−2−ナラトール錯体O
IMベンゼン溶液を調製し、このヘンセン溶液中にポリ
メタアクリル酸メチルを加え入れて充分混合し溶解する
。ポリエチレンテレフタレートのフィルム上にこの溶液
を流延後、乾燥してフィルム上に金属錯体を均一に形成
する。Table 5 Table 6 [Example 4] Iron 1-(2-pyridylazo)-2-naratol complex O
An IM benzene solution is prepared, and polymethyl methacrylate is added to the Hensen solution and thoroughly mixed and dissolved. This solution is cast onto a polyethylene terephthalate film and then dried to uniformly form a metal complex on the film.
金属錯体が形成されたフィルムにホルムアルデヒドの溶
液を塗布し、超高圧水銀灯で約380nm付近の紫外線
を照射すると鉛体色が消失し、金包鉛体が還元された。When a formaldehyde solution was applied to the film on which the metal complex was formed and the film was irradiated with ultraviolet rays around 380 nm using an ultra-high pressure mercury lamp, the lead color disappeared and the metal complex was reduced.
この状態のフィルムを第7表に示した液中に入れて第7
表のような反応条件下で磁場約10000eをフィルム
面内で磁化方向にかけて反応させた。反応後、充分水洗
し、乾燥した。The film in this state was placed in the liquid shown in Table 7.
Under the reaction conditions shown in the table, a magnetic field of about 10,000 e was applied in the film plane in the direction of magnetization to cause a reaction. After the reaction, it was thoroughly washed with water and dried.
実施例1と同様にして磁性体の組成と磁気特性を第7表
上記の実施例は、いずれも反応時に印加する磁界はフィ
ルム面内に平行であった。フィルム面に垂直に磁化を要
する場合には反応中のみならず洗浄、乾燥時にもフィル
ム面に垂直方向に磁界を印加することで、上記の実施例
と同様の効果があシ、本発明は垂直記録方式の磁気記録
媒体にも極めて有効であることが立証された。Table 7 shows the composition and magnetic properties of the magnetic material in the same manner as in Example 1. In all of the above examples, the magnetic field applied during the reaction was parallel to the plane of the film. When magnetization perpendicular to the film surface is required, applying a magnetic field perpendicular to the film surface not only during the reaction but also during washing and drying can produce the same effect as in the above embodiment. It has been proven that this method is also extremely effective for magnetic recording media.
以上、本発明によれば、従来の製造方伝にくらべて次の
効果がある。As described above, the present invention has the following effects compared to the conventional manufacturing method.
(1)金属錯体の触媒作用によるため基体上での磁性体
の成長反応が早く磁気記録媒体の裁着性にすぐれる。(1) Due to the catalytic action of the metal complex, the growth reaction of the magnetic material on the substrate is fast and the adhesion of the magnetic recording medium is excellent.
(2)磁性体は基体上の金属錯体を反応の核として成長
するため、基体上の磁性体苦度を金橋錯体の表面密度に
よって容易に制御することができる。このため、磁気特
性にすぐれた磁気記録媒体が容易に見られる。(2) Since the magnetic substance grows using the metal complex on the substrate as a reaction nucleus, the bitterness of the magnetic substance on the substrate can be easily controlled by the surface density of the gold bridge complex. Therefore, magnetic recording media with excellent magnetic properties can easily be found.
(3)磁界によって磁性体の成長方向を配向規制するこ
とができるため、−次元的に配向した磁性体の連鎖が得
られる。このため、針状比の太きい磁性体が形成され、
したがって保磁力や角型比など性能にすぐれた磁気記録
媒体かえられる。(3) Since the growth direction of the magnetic material can be regulated by a magnetic field, a chain of magnetic materials oriented in a -dimensional direction can be obtained. For this reason, a magnetic material with a large acicular ratio is formed,
Therefore, magnetic recording media with superior performance such as coercive force and squareness ratio can be replaced.
手続補正書(自発)
特許庁長官 殿
1、事件の表示 昭和57年特 許 願第2067
40号2、発明の名称 磁気記録媒体の製造方法3
、補正をする者
事件との関係 出 願 人東京都)巷区芝
五丁目33番1号
(423) 日本電気株式会社
代表者 関本忠弘
4、代理人
〒108 東京都港区芝五丁目37番8号 住友三田
ビル5 補正の対象
明細書の「発明の詳細な説明」の欄。Procedural amendment (voluntary) Commissioner of the Patent Office 1, Indication of case 1981 Patent Application No. 2067
40 No. 2, Title of the invention: Method for manufacturing magnetic recording medium 3
, Relationship to the case of the person making the amendment Applicant: 5-33-1 Shiba, Iwa-ku, Tokyo (423) Representative: Tadahiro Sekimoto 4, Agent: 5-37 Shiba, Minato-ku, Tokyo 108 No. 8 Sumitomo Sanda Building 5 "Detailed Description of the Invention" column of the specification subject to amendment.
6、補正の内容
(1) 第7頁1−4行の「アンモ−ラム」を1アン
モニウム」に訂正。6. Contents of amendment (1) On page 7, lines 1-4, "ammorum" was corrected to "1 ammonium".
(2)第8頁7行の「ナフドル」を「ナフトール」に訂
正。(2) Corrected "Nafdol" in line 7 of page 8 to "Naftol".
(3) 第9頁6行の「欠く」を「乏しく、」に訂正
。(3) On page 9, line 6, “lack” was corrected to “scarce.”
(4)第11頁2行の「液解」を「溶解」に訂正。(4) Corrected “liquid dissolution” in line 2 of page 11 to “dissolution”.
(5)第13頁第1表のC欄の「酒豪ナトリウム」を1
酒石酸ナトリウム」に訂正。(5) “Sakego Sodium” in column C of Table 1 on page 13 is 1
Corrected to ``Sodium Tartrate.''
(6)第14頁4行の「調整」を「調節」に訂正。(6) “Adjustment” in line 4 of page 14 was corrected to “adjustment”.
(7)第16頁実施例3の3行の「水溶液」の後に「に
」を追加。(7) Added “ni” after “aqueous solution” in the third line of Example 3 on page 16.
(8)第19頁2行の「ナフトール」を「ナフトール」
に訂正。(8) “Naphthol” in line 2 of page 19 is “naphthol”
Corrected.
(9)同頁5行の1テレクタレート」を「テレフタレー
ト」に訂正。(9) Corrected "1 terephthalate" in line 5 of the same page to "terephthalate."
(11) 第20頁第7表のj欄の「0.09Jの下
の空白に上から下へro、o 1 * 0.2.0.1
5.0.50 Jの順で追加。(11) In column j of Table 7 on page 20, write ro, o 1 * 0.2.0.1 in the blank space below 0.09J from top to bottom.
5.0.50 Added in the order of J.
Claims (1)
れた金属のイオンを主成分とする金属錯体を層状に付着
形成する工程と、前記基体上に付着形成した金属錯体を
還元する工程と、還元した金属錯体を反応の核として磁
界印加中で還還雰凹気によって鉄、ニッケル、およびコ
バルトなどのイオンを還元して前記基体上に鉄、ニッケ
ル、コバルト・を主成分とする磁性体を形成する工程を
含むことを特徴とする磁気記録媒体の製造方法。[Claims] Ligand iron containing nitrogen, oxygen or sulfur atoms. A step of depositing and forming a metal complex mainly composed of ions of a metal selected from at least one of nickel and cobalt, a step of reducing the metal complex deposited and formed on the substrate, and a step of reducing the reduced metal complex. A step of reducing ions such as iron, nickel, and cobalt in a reducing atmosphere while applying a magnetic field as a reaction nucleus to form a magnetic material mainly composed of iron, nickel, and cobalt on the substrate. A method of manufacturing a magnetic recording medium, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57206740A JPS5996705A (en) | 1982-11-25 | 1982-11-25 | Manufacture of magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57206740A JPS5996705A (en) | 1982-11-25 | 1982-11-25 | Manufacture of magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5996705A true JPS5996705A (en) | 1984-06-04 |
Family
ID=16528313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57206740A Pending JPS5996705A (en) | 1982-11-25 | 1982-11-25 | Manufacture of magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5996705A (en) |
-
1982
- 1982-11-25 JP JP57206740A patent/JPS5996705A/en active Pending
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