JPS5994838A - Device for wire bonding - Google Patents
Device for wire bondingInfo
- Publication number
- JPS5994838A JPS5994838A JP57205736A JP20573682A JPS5994838A JP S5994838 A JPS5994838 A JP S5994838A JP 57205736 A JP57205736 A JP 57205736A JP 20573682 A JP20573682 A JP 20573682A JP S5994838 A JPS5994838 A JP S5994838A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- ball
- inert gas
- stage
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/78268—Discharge electrode
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
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- H01L2924/11—Device type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はワイヤボンディング装（至）に関し、主として
ネイルヘッドワイヤボンディング装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding device, and mainly relates to a nail head wire bonding device.
ネイルヘッドワイヤボンディングは通′帛以下の工程に
従って行なわれる。Nail head wire bonding is performed according to the following steps.
第１図に示すように水平方向に可動なステージにとりつ
けられた上下方向に動く７−ム１に固定されたキャピラ
リー２から金り細紐３を導出させ、水素トーチあるいは
電気トーチ用対仏（４により金ｈ Ｍｌ 線３の先端を
溶かしボールを作る。次に第２図のように７−ム１を降
ろしリードフレームにタイボンディングされた半導体チ
ップ上の電極パッド５と前記ホールを熱圧着させる。次
に第３図に示すように７−ム１を上げなからア・−ム全
体を外部リード６上に移動させ、再度アームを降ろしリ
ードと金属細線を熱圧着する。次に第４図のようにアー
ムを上げて金庫＃ｌｉ 糾を切断し、以下上記の工程を
繰り返す。As shown in Fig. 1, a thin gold string 3 is led out from a capillary 2 fixed to a vertically movable 7-mm 1 attached to a horizontally movable stage. Step 4 melts the tip of the gold h Ml wire 3 to form a ball. Next, as shown in Fig. 2, lower the wire 7 and bond the electrode pad 5 on the semiconductor chip tie-bonded to the lead frame and the hole by thermocompression. Next, as shown in Fig. 3, without raising the arm 1, move the entire arm onto the external lead 6, lower the arm again, and thermo-compress the lead and the thin metal wire.Next, as shown in Fig. 4. Raise the arm as shown, cut the safe #li, and repeat the above steps.
従来から一般的に用いられている水素トーチは高速化す
るにしたがい炎がトーチの収動に追随できなくなるため
晶速目動ポンディング装置では電気トーチが主に用いら
れている。As the speed of the hydrogen torch, which has been commonly used in the past, increases, the flame cannot follow the retraction of the torch, so electric torches are mainly used in crystal speed variable pounding devices.
電気トーチは第１図あるいは第５図に示すようにワイヤ
３を一方の電極とし、対極４がワイヤの直下に米た時両
極間にパルス電圧を印加し放電を起こさせこの放電によ
ってワイヤの先端を溶がし表面張力によってポールを形
成（ボール７ツブ）するものである。As shown in Figure 1 or Figure 5, an electric torch uses a wire 3 as one electrode, and when a counter electrode 4 is placed directly below the wire, a pulse voltage is applied between the two electrodes to cause an electric discharge, which causes the tip of the wire to rise. The material is melted to form a pole (7 balls) using surface tension.
従来、金腑細ヤＪとしては、その化学的安定性のために
純金線が用いられている。近年、生が性を向上させるた
めに高速かつ自動のポンディング装置が実用化されてい
るが、従来の純金線では、ワイヤの引軛り強度が小さい
ために、ボンティング作業中にワイヤ切れ等の間組が出
てきている。そこでボンディング性をそこなわない範囲
で各種の元素を微量添加し、ワイヤの引張り強度を大き
くした金線が用いられている。Conventionally, pure gold wire has been used as the gold wire due to its chemical stability. In recent years, high-speed and automatic bonding equipment has been put into practical use to improve bonding properties, but conventional pure gold wire has low wire drag strength, so wire breakage occurs during bonding work. The middle group is coming out. Therefore, gold wires are used in which the tensile strength of the wire is increased by adding trace amounts of various elements within a range that does not impair bonding properties.
上記の不純物を添加した金線をホールアップしてみると
、ボール表向に添加不純物の酸化物が析出する。添加不
純物として酸化しやすい元素たとえばベリリウム（−Ｂ
ｅ ） 、マグネシウム（Ｍｇ ）、力／Ｌ−シ＋７ム
（Ｃａ）、チタン（Ｔｉ ） 、アルミニウム（Ａ１／
）、マンガン（Ｍｎ）などを含む場合は、これらの酸化
物の析出した状態のボールが半導体素子上の電極パッド
に熱圧着されるために電極とポール間の接合強度が減少
してしまう。When a gold wire doped with the above impurities is holed up, oxides of the added impurities are precipitated on the surface of the ball. Elements that are easily oxidized as added impurities, such as beryllium (-B
e), Magnesium (Mg), Force/L-Si+7 (Ca), Titanium (Ti), Aluminum (A1/
), manganese (Mn), etc., the balls in which these oxides are precipitated are bonded by thermocompression to the electrode pads on the semiconductor element, reducing the bonding strength between the electrodes and the poles.
一方、近年の金価格の高脚にともない、全以外のボンデ
ィングワイヤを用いようとする試みがなされている。例
えば銀は、金と同６一度の物理的特性を持っているが、
ボールアップ時に酸化しやすいため、窒ｆあるいは不活
性ガス雰囲気中でポールアップしなければならない。On the other hand, as the price of gold has increased in recent years, attempts have been made to use bonding wires other than wires. For example, silver has the same physical properties as gold, but
Since it is easy to oxidize when the ball is raised, the pole must be raised in a nitrogen atmosphere or an inert gas atmosphere.
不純物添加の金ワイヤにおける不純物元素の酸化および
その酸化物の析出を防止するために、あるいは、卸ワイ
ヤな簡単な方法で実用に供するために、第５図に示すよ
うに電、気トーチ用対極４の桜に窒素あるいは不活性ガ
スが吹きつけられるようなノズル７を設け、ポールアッ
プを鴛素あるいは不活性ガス気流中で行なった。ここで
ノズル７は７−ム１が取りつけられている水平方向に可
動なステージに１雉され、沃累あるいは不活°性ガスが
確実にポールアップ位置に吠きつけられているようにし
た。In order to prevent the oxidation of impurity elements and the precipitation of their oxides in impurity-doped gold wires, or to put them into practical use in a simple way for wholesale wires, a counter electrode for electric torches is used as shown in Figure 5. A nozzle 7 was installed to spray nitrogen or inert gas onto the cherry tree No. 4, and pole-up was performed in a stream of chlorine or inert gas. Here, the nozzle 7 was blown onto a horizontally movable stage to which the 7-mm 1 was attached to ensure that the sludge or inert gas was directed to the pole-up position.
このような、ガス免流中でのポールアップでは留素ある
いは不活性ガス雰囲気をつくるためにはある程度以上の
ガス流蓋が必要である。しかし逆にガス流量が多すぎる
とボールの形成が不安定になり、ボール寸法が一定しな
くなったり、場合によってはボールが形成されないこと
があり、ガス流ｉのコン）ｐ−ルがＳかしいという欠点
を有していることが明らかとなった。In such pole-up during gas flow relief, a gas flow lid of a certain level or more is required to create a fluorine or inert gas atmosphere. However, if the gas flow rate is too high, on the other hand, the formation of the ball becomes unstable, the ball dimensions become inconsistent, or in some cases, the ball may not be formed. It has become clear that it has some drawbacks.
本発明は、不活性ガス気流中でも安定したポール形成が
行なえるワイヤボンディング装置を提供することを目的
とする。本発明のワイヤボンディング装置は水平方向に
可動なステージと、該ステージにＪａｙ、付けられた上
下方向に動く７−ムと該アームに取付けられたキャピラ
リーと、電気トーチ用対ｊｄ！！、有するワイヤボンデ
ィング装置において、キャピラリーから導出される金属
細線の先端部で放電によってポール状になる部分の近傍
に、前記ステージに接続している複数のノズルを設けて
なることを特徴とする。第６図は本発明による一実施例
の概略図である。SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding device that can stably form a pole even in an inert gas flow. The wire bonding apparatus of the present invention includes a horizontally movable stage, a vertically movable arm attached to the stage, a capillary attached to the arm, and a pair for an electric torch. ! A wire bonding apparatus having a wire bonding apparatus is characterized in that a plurality of nozzles connected to the stage are provided near a portion of the thin metal wire led out from the capillary that becomes pole-shaped due to discharge. FIG. 6 is a schematic diagram of an embodiment according to the present invention.
第５図に示すような一方向からの窒素あるいは不活性ガ
スの吹きつけによるポール形成の不安定性の原因は、気
流によってもたらされる横風によるもので、第６図の実
施例のとおり本発明によれば、電気トーチ用対極をはさ
んで複数の方向から窒素あるいは不活性ガスが吹きつけ
られるためボールアップ時には、実質的に横風の影響を
避けることができ安定したポール形成を行なうことがで
きる。さらにボール形成位制での雰囲気は、一方向から
吹きつける場合に比べて、より完全になる。The cause of the instability of pole formation due to the blowing of nitrogen or inert gas from one direction as shown in FIG. 5 is due to the cross wind brought about by the air current. For example, since nitrogen or inert gas is blown from a plurality of directions across the counter electrode for the electric torch, the influence of cross winds can be substantially avoided during ball-up, making it possible to form a stable pole. Furthermore, the atmosphere in the ball formation system is more complete than when blowing from one direction.
このためワイヤ中の添加不純物の酸化及びその酸化物の
析出を防ぐことができる。また、欽ワイヤのようなり・
ｌ化されやすいワイヤでも信頼性のある結線が実駒、で
きるものである。また各ノズルからの蟹素あるいは不活
性ガスの流電は同一とすることが鎚ましい。“
以上のように、本発明によれば、簡単に、しかも確実な
窒素あるいは不活性ガス算囲気な作り出すことができか
つ、ポールアップが安定して行なうことができるもので
ある。したが９て、酸化しやすい元素を含有した金ワイ
ヤあるいは鑓ワイヤのように酸化しやすいワイヤを用い
て信頼性のおけるポンディングを高速で行なうことがで
きるものである。Therefore, oxidation of added impurities in the wire and precipitation of the oxides can be prevented. Also, like Kin wire,
Even wires that are easily damaged can be connected reliably. Further, it is preferable that the current of the crab element or inert gas from each nozzle is the same. “As described above, according to the present invention, it is possible to easily and reliably create a nitrogen or inert gas atmosphere, and pole-up can be performed stably. , it is possible to perform reliable bonding at high speed using a wire that is easily oxidized, such as a gold wire containing an element that is easily oxidized or a wire that is easily oxidized.
第１図から第４図はネイルヘッドワイヤボンデおいて１
・・・・・・アーム ２・・・・・・キャピラリー ３
・・・・・・ワイヤ ４・・・・・・電気トーチ用対極
５・・・・・・半導体チップ電極パッド ６・・・・
・・外部リード ７・・・・・・ガス吹きつけノズルで
ある。
才 ／ロ オ ２ 図
計 ３ ロ オ ４ 図
オＳ口
オｅ 図Figures 1 to 4 show nail head wire bonding at 1
...Arm 2 ...Capillary 3
...Wire 4...Counter electrode for electric torch 5...Semiconductor chip electrode pad 6...
...External lead 7... Gas spray nozzle. Sai / Roo 2 Diagram 3 Roo 4 Diagram O S mouth O e Diagram
Claims (1)
れ上下方向に動くアームと、該アームに取＋１けられた
キャピラリーと、電気トーチ用対椿とを有するワイヤボ
ンティング装置において、キャピラリーから導出される
金属細線の先端部で放電によってボール状になる部分の
近傍に、前記ステージに接続している複数のノズルを設
けてなることを特゛徴とするワイヤボンディング装置。In a wire bonding device having a horizontally movable stage, an arm attached to the stage and movable in the vertical direction, a capillary attached to the arm, and a pair of camellias for an electric torch, A wire bonding apparatus characterized in that a plurality of nozzles connected to the stage are provided near a portion of a thin metal wire formed into a ball shape by electric discharge at the tip thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57205736A JPS5994838A (en) | 1982-11-24 | 1982-11-24 | Device for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57205736A JPS5994838A (en) | 1982-11-24 | 1982-11-24 | Device for wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5994838A true JPS5994838A (en) | 1984-05-31 |
Family
ID=16511808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57205736A Pending JPS5994838A (en) | 1982-11-24 | 1982-11-24 | Device for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994838A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607137A (en) * | 1983-06-27 | 1985-01-14 | Shinkawa Ltd | Device for forming ball for wire bonder |
| JP2011146754A (en) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | Bonding structure of bonding wire, and method for forming the bonding structure |
-
1982
- 1982-11-24 JP JP57205736A patent/JPS5994838A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607137A (en) * | 1983-06-27 | 1985-01-14 | Shinkawa Ltd | Device for forming ball for wire bonder |
| JP2011146754A (en) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | Bonding structure of bonding wire, and method for forming the bonding structure |
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