JPS599114B2 - 光電式メモリ装置 - Google Patents
光電式メモリ装置Info
- Publication number
- JPS599114B2 JPS599114B2 JP50150070A JP15007075A JPS599114B2 JP S599114 B2 JPS599114 B2 JP S599114B2 JP 50150070 A JP50150070 A JP 50150070A JP 15007075 A JP15007075 A JP 15007075A JP S599114 B2 JPS599114 B2 JP S599114B2
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- voltage
- light
- polarization
- photovoltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 74
- 230000010287 polarization Effects 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 39
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 4
- 239000000463 material Substances 0.000 description 63
- 239000004973 liquid crystal related substance Substances 0.000 description 53
- 239000002245 particle Substances 0.000 description 39
- 230000005684 electric field Effects 0.000 description 34
- 239000013078 crystal Substances 0.000 description 31
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 23
- 230000005855 radiation Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 18
- 239000004988 Nematic liquid crystal Substances 0.000 description 15
- 238000005286 illumination Methods 0.000 description 15
- 229910002113 barium titanate Inorganic materials 0.000 description 14
- 230000015654 memory Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 210000002858 crystal cell Anatomy 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 229910002971 CaTiO3 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000002285 radioactive effect Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002999 depolarising effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007787 long-term memory Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000012857 radioactive material Substances 0.000 description 1
- 239000000941 radioactive substance Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H5/00—Direct voltage accelerators; Accelerators using single pulses
- H05H5/04—Direct voltage accelerators; Accelerators using single pulses energised by electrostatic generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/12—Cells using conversion of the radiation into light combined with subsequent photoelectric conversion into electric energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Recording Or Reproduction (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/533,365 US4051465A (en) | 1973-11-01 | 1974-12-16 | Ferroelectric ceramic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51105239A JPS51105239A (US06580902-20030617-M00005.png) | 1976-09-17 |
| JPS599114B2 true JPS599114B2 (ja) | 1984-02-29 |
Family
ID=24125647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50150070A Expired JPS599114B2 (ja) | 1974-12-16 | 1975-12-16 | 光電式メモリ装置 |
Country Status (12)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6435277U (US06580902-20030617-M00005.png) * | 1987-08-27 | 1989-03-03 | ||
| JPH01176283U (US06580902-20030617-M00005.png) * | 1988-06-01 | 1989-12-15 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1979000096A1 (en) * | 1977-08-15 | 1979-03-08 | Photovoltaic Ceramic Corp | Optical memory with storage in three dimensions |
| US4144591A (en) * | 1977-08-15 | 1979-03-13 | The United States Of America As Represented By The Secretary Of The Army | Memory transistor |
| US4247914A (en) * | 1979-06-12 | 1981-01-27 | The United States Of America As Represented By The Secretary Of The Army | Optical memory with fiber optic light guide |
| US4250567A (en) * | 1979-06-20 | 1981-02-10 | The United States Of America As Represented By The Secretary Of The Army | Photovoltaic-ferroelectric beam accessed memory |
| JPS5755591A (en) * | 1980-09-19 | 1982-04-02 | Hitachi Ltd | Information recording method |
| JPS57117186A (en) * | 1981-01-12 | 1982-07-21 | Tdk Corp | Ferrodielectric memory and its driving method |
| US4533215A (en) * | 1982-12-02 | 1985-08-06 | The United States Of America As Represented By The Secretary Of The Navy | Real-time ultra-high resolution image projection display using laser-addressed liquid crystal light valve |
| US4566086A (en) * | 1983-06-13 | 1986-01-21 | Ncr Corporation | Information storage system utilizing electrets |
| DE3434388A1 (de) * | 1984-09-19 | 1986-06-26 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zur erzeugung der ersten ableitung eines zweidimensionalen bildes und optisches bauelement zur durchfuehrung des verfahrens |
| DE3447208A1 (de) * | 1984-12-22 | 1986-06-26 | Bayer Ag, 5090 Leverkusen | Verfahren zum auslesen von informationen aus elektrisch polarisierbaren datentraegern mittels elektronenstrahlen |
| JPH0766575B2 (ja) * | 1986-02-17 | 1995-07-19 | 株式会社日立製作所 | 電子ビームによる情報再生装置 |
| JPS63245567A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 画像処理装置 |
| US5910393A (en) * | 1987-06-10 | 1999-06-08 | Mitsubishi Denki Kabushiki Kaisha | Optical recording material |
| US4965784A (en) * | 1988-05-31 | 1990-10-23 | Sandia Corporation | Method and apparatus for bistable optical information storage for erasable optical disks |
| US4931019A (en) * | 1988-09-01 | 1990-06-05 | Pennwalt Corporation | Electrostatic image display apparatus |
| US5003528A (en) * | 1988-09-09 | 1991-03-26 | The United States Of America As Represented By The Secretary Of The Air Force | Photorefractive, erasable, compact laser disk |
| US5267179A (en) * | 1989-08-30 | 1993-11-30 | The United States Of America As Represented By The United States Department Of Energy | Ferroelectric optical image comparator |
| DE69026246T2 (de) * | 1989-11-29 | 1996-08-29 | Dainippon Printing Co Ltd | Elektrostatisches kopierverfahren |
| US5206829A (en) * | 1990-10-24 | 1993-04-27 | Sarita Thakoor | Thin film ferroelectric electro-optic memory |
| SE501106C2 (sv) * | 1992-02-18 | 1994-11-14 | Peter Toth | Optiskt minne |
| JPH05282717A (ja) * | 1992-03-31 | 1993-10-29 | Canon Inc | 記録媒体の製造方法、及び記録媒体、及び情報処理装置 |
| JP2890011B2 (ja) * | 1992-08-19 | 1999-05-10 | 富士写真フイルム株式会社 | 情報記録方法 |
| US5375085A (en) * | 1992-09-30 | 1994-12-20 | Texas Instruments Incorporated | Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers |
| US5621559A (en) * | 1994-04-18 | 1997-04-15 | California Institute Of Technology | Ferroelectric optical computing device with low optical power non-destructive read-out |
| FR2757992B1 (fr) * | 1996-12-26 | 1999-01-29 | Commissariat Energie Atomique | Support d'enregistrement d'informations, dispositif de lecture de ce support et procedes de mise en oeuvre de ce dispositif |
| US6515957B1 (en) * | 1999-10-06 | 2003-02-04 | International Business Machines Corporation | Ferroelectric drive for data storage |
| JP2003263804A (ja) * | 2002-03-08 | 2003-09-19 | Pioneer Electronic Corp | 誘電体記録媒体とその製造方法及びその製造装置 |
| US7397624B2 (en) | 2003-11-06 | 2008-07-08 | Seagate Technology Llc | Transducers for ferroelectric storage medium |
| US20050237906A1 (en) * | 2004-04-27 | 2005-10-27 | Gibson Gary A | High density data storage |
| US20060083048A1 (en) * | 2004-06-18 | 2006-04-20 | Naumov Ivan I | Multi-stable vortex states in ferroelectric nanostructure |
| US7593250B2 (en) * | 2004-06-18 | 2009-09-22 | Board Of Trustees Of The University Of Arkansas | Ferroelectric nanostructure having switchable multi-stable vortex states |
| US7626842B2 (en) * | 2006-11-16 | 2009-12-01 | Freescale Semiconductor, Inc. | Photon-based memory device and method thereof |
| WO2010131241A2 (en) | 2009-05-13 | 2010-11-18 | Yevgeni Preezant | Improved photo-voltaic cell structure |
| WO2011100551A1 (en) * | 2010-02-12 | 2011-08-18 | Rutgers, The State University Of New Jersey | Ferroelectric diode and photovoltaic devices and methods |
| US20120038778A1 (en) * | 2010-08-11 | 2012-02-16 | United States Of America, As Represented By The Secretary Of The Army | Self-Scanning Passive Infrared Personnel Detection Sensor |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2691738A (en) * | 1949-04-08 | 1954-10-12 | Bell Telephone Labor Inc | Electrical device embodying ferroelectric lanthanum-containing substances |
| US2663802A (en) * | 1951-12-11 | 1953-12-22 | Philip E Ohmart | Neutron detector |
| US2876368A (en) * | 1953-04-06 | 1959-03-03 | Tracerlab Inc | Nuclear electret battery |
| US2775650A (en) * | 1954-12-31 | 1956-12-25 | Bell Telephone Labor Inc | Ferroelectric recording and reproduction of speech |
| US2926336A (en) * | 1955-04-14 | 1960-02-23 | Bell Telephone Labor Inc | Ferroelectric device |
| US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
| NL295918A (US06580902-20030617-M00005.png) * | 1962-07-31 | |||
| US3508213A (en) * | 1967-06-14 | 1970-04-21 | Honeywell Inc | Ferroelectric memory apparatus using the transcharger principle of operation |
| US3497698A (en) * | 1968-01-12 | 1970-02-24 | Massachusetts Inst Technology | Metal insulator semiconductor radiation detector |
| US3521244A (en) * | 1968-10-23 | 1970-07-21 | Rca Corp | Electrical circuit for processing periodic signal pulses |
| US3609002A (en) * | 1969-12-30 | 1971-09-28 | Bell Telephone Labor Inc | Multiple element optical memory structures using fine grain ferroelectric ceramics |
| US3623030A (en) * | 1970-05-22 | 1971-11-23 | Nasa | Semiconductor-ferroelectric memory device |
| US3693171A (en) * | 1970-12-30 | 1972-09-19 | Itt | Ferroelectric-photoelectric storage unit |
| US3681765A (en) * | 1971-03-01 | 1972-08-01 | Ibm | Ferroelectric/photoconductor memory element |
| FR2146903B1 (US06580902-20030617-M00005.png) * | 1971-07-23 | 1978-06-02 | Anvar | |
| FR2153140B1 (US06580902-20030617-M00005.png) * | 1971-09-20 | 1974-05-31 | Thomson Csf | |
| US3702724A (en) * | 1971-10-13 | 1972-11-14 | Atomic Energy Commission | Ferroelectric ceramic plate electrooptical light scattering device and method |
| US3740734A (en) * | 1972-03-15 | 1973-06-19 | Bell Telephone Labor Inc | Coarse grain polycrystalline ferroelectric ceramic optical memory system |
| FR2241846B1 (US06580902-20030617-M00005.png) * | 1973-08-21 | 1977-09-09 | Thomson Csf | |
| US3855004A (en) * | 1973-11-01 | 1974-12-17 | Us Army | Method of producing current with ceramic ferroelectric device |
| JPS50115830A (US06580902-20030617-M00005.png) * | 1974-02-22 | 1975-09-10 |
-
1975
- 1975-11-25 AU AU86915/75A patent/AU499874B2/en not_active Expired
- 1975-11-25 ZA ZA757388A patent/ZA757388B/xx unknown
- 1975-11-26 IT IT29686/75A patent/IT1049819B/it active
- 1975-12-09 GB GB50328/75A patent/GB1544086A/en not_active Expired
- 1975-12-11 DE DE19752555816 patent/DE2555816A1/de not_active Ceased
- 1975-12-11 CA CA241,569A patent/CA1054244A/en not_active Expired
- 1975-12-12 IL IL48659A patent/IL48659A/xx unknown
- 1975-12-15 BE BE6045294A patent/BE836659A/xx not_active IP Right Cessation
- 1975-12-15 FR FR7538281A patent/FR2307336A1/fr active Granted
- 1975-12-16 JP JP50150070A patent/JPS599114B2/ja not_active Expired
- 1975-12-16 CH CH1629075A patent/CH604321A5/xx not_active IP Right Cessation
-
1977
- 1977-04-05 US US05/784,761 patent/US4160927A/en not_active Expired - Lifetime
- 1977-08-15 US US05/824,895 patent/US4101975A/en not_active Expired - Lifetime
- 1977-08-15 US US05/824,896 patent/US4103341A/en not_active Expired - Lifetime
- 1977-08-15 US US05/824,894 patent/US4139908A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6435277U (US06580902-20030617-M00005.png) * | 1987-08-27 | 1989-03-03 | ||
| JPH01176283U (US06580902-20030617-M00005.png) * | 1988-06-01 | 1989-12-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2307336B1 (US06580902-20030617-M00005.png) | 1982-07-30 |
| AU8691575A (en) | 1977-06-02 |
| CH604321A5 (US06580902-20030617-M00005.png) | 1978-09-15 |
| JPS51105239A (US06580902-20030617-M00005.png) | 1976-09-17 |
| AU499874B2 (en) | 1979-05-03 |
| IL48659A0 (en) | 1976-02-29 |
| US4101975A (en) | 1978-07-18 |
| FR2307336A1 (fr) | 1976-11-05 |
| IL48659A (en) | 1978-09-29 |
| DE2555816A1 (de) | 1976-06-24 |
| ZA757388B (en) | 1977-07-27 |
| US4160927A (en) | 1979-07-10 |
| IT1049819B (it) | 1981-02-10 |
| CA1054244A (en) | 1979-05-08 |
| BE836659A (fr) | 1976-06-15 |
| US4139908A (en) | 1979-02-13 |
| GB1544086A (en) | 1979-04-11 |
| US4103341A (en) | 1978-07-25 |
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