JPS5989760A - Production device of photosensitive body for electrophotography - Google Patents

Abstract

PURPOSE:To reduce the time required for maintenance with easier washing of electrodes by providing an attachable and detachable cover on the surface of the plasma generating electrodes in a plasma CVD device which produces a photosensitive body. CONSTITUTION:A part or the entire surface of plasma generating electrodes 4 provided in a vacuum vessel 3 of a plasma CVD device is put under a removable cover 5. A hole for blowing gas is provided to the cover 5 in accordance with the hole of the electrode 4 for blowing gas. A gaseous mixture of, for example, silane, Ar, H2 is introduced into the vessel 3 and is held in a plasmatic state by a high frequency, so that a-Si is deposited on an electrophotographic photosensitive drum 6 which is heated, cooled and supported by a susceptor 7. The deposition on the electrode 4 is too much and the continuous movement of the device is difficult if there is no cover 5, but if the cover 5 is used, a required maintenance is merely to exchange the same with a previously washed cover.

Description

[Detailed Description of the Invention] The present invention relates to X-rays, ? ! The purpose is to facilitate equipment maintenance in manufacturing electrophotographic photoreceptors that are sensitive to infrared radiation, ultraviolet light, visible light, and infrared light (hereinafter collectively referred to as light). In recent years, electrophotographic photoreceptors manufactured using the plasma OVD method, particularly water-bulked amorphous silicon, hydrogenated amorphous silicon carbide, hydrogenated amorphous silicon nitride, hydrogenated amorphous silicon oxide, Hydrogenated amorphous silicon germanium, hydrogenated amorphous silicon carbonitride,
Hydrogenated amorphous silicon carbide oxide, hydrogenated silicon nitride oxide, hydrogenated amorphous silicon germanium carbide, hydrogenated amorphous silicon germanium nitride, hydrogenated amorphous silicon germanium oxide, hydrogenated amorphous silicon carbonitride Germanium, hydrogenated amorphous silicon germanium carbide, hydrogenated amorphous silicon nitride silicon germanium (hereinafter referred to as
They are collectively called α-81. ) has superior characteristics compared to conventional amorphous selenium electrophotographic photoreceptors, such as better photosensitivity, almost no residual potential, high heat resistance, and several tens of times more hardness. .

However, in the α-81 electrophotographic photoreceptor, the α-81 precipitation rate (approximately 1000 X/m) is slow and the manufacturing time is long. If the α-S1 powder adheres to the generating electrode and does not clean the inside of the device, the α-S1 powder may cause an electrical shock between the electrode and the surrounding area (4) and may cause pinholes on the photoreceptor for secondary photographs. It had the following drawbacks.

The present invention facilitates cleaning of the electrode and shortens the time required for maintenance.

Hereinafter, the present invention will be explained in detail based on examples. 1st
The figure shows a sectional view of a plasma O'VD apparatus according to the present invention. 1 is a gas cylinder and 2 is a mass flow controller to precisely control the flow rate. 6 is a vacuum chamber, and 4 is an electrode for plasma generation, which also serves as a gas outlet. Reference numeral 5 denotes a removable cover covering the surface of the electrode 4, and has holes for blowing out gas corresponding to the gas blowing ports of the electrode 4. Reference numeral 6 designates a photosensitive drum for electrophotography, and 7 designates a support body for heating, cooling, and supporting the drum, and also serves as a counter electrode to the electrode 4, which is grounded. 8 is an exhaust port, 9 is a power supply for plasma generation, and generally 13.56
A high frequency power source of MHz is used. Reference numeral 10 denotes a gas pipe for introducing gas into the electrode 4.

In a conventional plasma OVD device without a cover 5, the gas introduced into the vacuum chamber, such as a mixed gas of silane, argon, and hydrogen, becomes a plasma state due to high frequency, and α-81 is produced everywhere in the vacuum chamber that the plasma touches. (This kind of manufacturing method is called plasma OVD.) In particular, the precipitation on the electrodes is remarkable, and on the unheated electrodes α
-81 powder adheres to the electrodes, making it difficult to operate the device continuously without cleaning the electrodes. Also, cleaning usually takes about 30 minutes to 1 hour. On the other hand, if the cover 5 according to the present invention is used, the equipment can be operated again simply by replacing the cover with a previously cleaned cover, and the number of productions per day can be increased by about 20 to 30%. In addition, the cost of the electrophotographic photoreceptor can be reduced, which is useful.

[Brief explanation of drawings]

FIG. 1 is a sectional view of an electrophotographic photoreceptor according to the present invention. 4°°°°°° Electrode for plasma generation 5 too... - Kanoku - 6...Drums 7...Support that's all Applicant: Suwa Seikosha Co., Ltd. Agent Patent Attorney Mogami Figure 1

Claims (1)

[Claims] (1) II! Plasma O for producing photoreceptors for secondary photographs
1. An electrophotographic photoreceptor manufacturing apparatus in a VD apparatus, characterized in that a removable cover is provided on a part or the entire surface of a plasma generation electrode provided in a vacuum chamber of the plasma OVD apparatus.