JPS5986219A - Charged beam type optical lens barrel - Google Patents

Charged beam type optical lens barrel

Info

Publication number
JPS5986219A
JPS5986219A JP19588182A JP19588182A JPS5986219A JP S5986219 A JPS5986219 A JP S5986219A JP 19588182 A JP19588182 A JP 19588182A JP 19588182 A JP19588182 A JP 19588182A JP S5986219 A JPS5986219 A JP S5986219A
Authority
JP
Japan
Prior art keywords
current detector
beam current
aperture
blanking
charged beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19588182A
Other languages
Japanese (ja)
Inventor
Shuichi Tamamushi
秀一 玉虫
Tadahiro Takigawa
忠宏 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19588182A priority Critical patent/JPS5986219A/en
Publication of JPS5986219A publication Critical patent/JPS5986219A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To facilitate alignment between optical systems thereby to permit an improvement in working efficiency, by providing a beam current detector. CONSTITUTION:A beam current detector constituted by a coil is provided at one or more arbitrary positions on the part of a beam transport path on the downstream side of a blanking electrode 21, and a beam is modulated by the blanking electrode 21, thereby making it possible to measure the beam current at the position where the beam current detector is provided without affecting the beam. For example, current detector coils 230a-230e are respectively disposed under apertures. The arrangement is such that whether or not the beam is intercepted by a projection lens aperture owing to, for example, the deflecting operation is judged simply by making comparison between the respective outputs of control circuit 28, 29 connected to the beam current detectors.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は電子ビーム露光装置やイオンビーム露光装置等
の荷電ビーム装置に用いられる荷電ビーム光学鋭部の改
良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an improvement in a charged beam optical sharp part used in a charged beam apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus.

〔従来技術とその問題点〕[Prior art and its problems]

近時、半導体ウェハやマスク基板等の試料に微細パター
ンを形成するものとして各種の電子ビーム露光装置が開
発されている。そしてこれらの装置のうちで成子ビーム
の寸法及び形状を変化させながら描画を行なう、所請ビ
ーム寸法可変型の°電子ビーム露光装置が高速描画に最
も適しているといわれている。
Recently, various electron beam exposure apparatuses have been developed to form fine patterns on samples such as semiconductor wafers and mask substrates. Among these devices, a variable beam size type electron beam exposure device, which performs writing while changing the size and shape of the electron beam, is said to be most suitable for high-speed writing.

第1図はこのような装置に用いられる従来の′鑞子ビー
ム光学鏡簡の要部を示す概略構成図である。
FIG. 1 is a schematic diagram showing the main parts of a conventional forceps beam optical mirror used in such an apparatus.

図中1は成子銃、2は第1コンデンサレンズ、3はブラ
ンキング−極、4は第2コンデンサレンズ、5はビーム
壷形用の第1アパーチヤマスク、6はビーム寸法変化用
の偏向電極、7は投影レンズ、8はビーム壷形用の第2
アパーチヤマスク、9は縮少レンズ、10は走査用偏向
−極、9′は対物レンズ、40は試料である。ブランキ
ング成極3の中心に形成された第1クロスオーバP s
 第2コンデンサレンズによシ偏向器6の中心に結像さ
れ、この偏向中心に第2クロスオーバP2が形成されて
いる。第lアパーチャマスク5の像は投影レンズ7によ
って第2アパーナヤマスク8上に形成されている。しか
して偏向器6により礒子ビームを所定方向に偏向すると
上記アパーチャ像の第2アパーチヤマスク8のアパーチ
ャに対する位置が変化する。これにより以下、縮少レン
ズ9、対物レンズ11等で第2アパーチヤマスク8の像
を試料面に結像すると、最終的に試料面に結像される像
は前記第2アパーチヤマスク8のアパーチャとその面に
結像している第1アパーチヤマスク5の像との重なり部
分となる。したがって偏向器6で゛イ子ビームを偏向す
ることによって、試料面に照射されるビーム寸法及び形
状を可変にすることが出来る。
In the figure, 1 is the Nariko gun, 2 is the first condenser lens, 3 is the blanking pole, 4 is the second condenser lens, 5 is the first aperture mask for the beam pot shape, and 6 is the deflection electrode for changing the beam size. , 7 is a projection lens, 8 is a second beam bottle type
9 is an aperture mask, 9 is a reduction lens, 10 is a scanning deflection pole, 9' is an objective lens, and 40 is a sample. The first crossover P s formed at the center of the blanking polarization 3
An image is formed at the center of the deflector 6 by the second condenser lens, and a second crossover P2 is formed at the center of this deflection. The image of the l-th aperture mask 5 is formed on the second aperture mask 8 by the projection lens 7. When the aperture beam is deflected in a predetermined direction by the deflector 6, the position of the aperture image relative to the aperture of the second aperture mask 8 changes. As a result, when the image of the second aperture mask 8 is formed on the sample surface using the reduction lens 9, the objective lens 11, etc., the image finally formed on the sample surface is the image of the second aperture mask 8. This is the overlapped portion between the aperture and the image of the first aperture mask 5 formed on its surface. Therefore, by deflecting the ion beam with the deflector 6, the size and shape of the beam irradiated onto the sample surface can be varied.

しかしながら、この棟の装置にあっては次のような問題
点があった。すなわち、前記第1図に示した構成では、
投影レンズ7及び縮小レンズ9、対物レンズ9′上でビ
ームがレンズのアパーチャの中心を通り、ビーム寸法変
化用偏向観極6を動作させてビームを偏向させてもビー
ムがアパーチャにさえぎられないようにしなければ良好
な成形ビームが得られない。このため調整が煩雑で作業
能率が低下した。
However, the equipment in this building had the following problems. That is, in the configuration shown in FIG.
The beam passes through the center of the aperture of the lens on the projection lens 7, reduction lens 9, and objective lens 9', and the beam is not blocked by the aperture even if the beam is deflected by operating the beam dimension changing deflection pole 6. Otherwise, a good shaped beam cannot be obtained. This made adjustments complicated and reduced work efficiency.

なお上述した問題は咀子ビーム光学蜆筒に限らずイオン
ビーム光学綿筒についても同様に云えることである。
Note that the above-mentioned problem is not limited to the mass beam optical tube but also applies to the ion beam optical tube.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、光学系の軸合わせの容易化をはかり得
て、作業能率の向上をはかり得る荷電ビーム光学鏡筒を
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a charged beam optical lens barrel that can facilitate axis alignment of an optical system and improve work efficiency.

〔発明の概要〕[Summary of the invention]

本発明の骨子はブランキング′磁極以後のビーム輸送径
路上の1つ以上の任意の箇所に第2図に示すようなコイ
ル230からなるビーム電流検出器を取りつけ、ブラン
キング電極210によってビーkEを哀調することによ
りその箇所におけるビーム電流をビームに影響を与える
ことなく測定できるようにしたことにある。220はブ
ランキング板である。
The gist of the present invention is to attach a beam current detector consisting of a coil 230 as shown in FIG. The purpose of this method is to make it possible to measure the beam current at that point without affecting the beam. 220 is a blanking plate.

すなわち本発明は1組以上のブランキング−極をもち2
枚のビーム成形用アパーチャマスクおよび1組以上の偏
向器を備え、荷電ビームの寸法及び形状を可変制御し該
ビームを試料向上に照射する竹畦ビーム九学鋭筒におい
て少なくとも一つのビーム電流検出器を取りつけたもの
である。
That is, the present invention has one or more sets of blanking-poles and 2
At least one beam current detector in a bamboo ridge beam tube equipped with two beam shaping aperture masks and one or more sets of deflectors, which variably controls the size and shape of the charged beam and irradiates the beam onto the sample. It is equipped with a.

〔祐明の効果〕[Yumei's effect]

本発明によればビームに影響を与えることなくビーム輸
送径路上の任意の箇所に於けるビーム電流を測定するこ
とが出来、実際の運転状態でのビームの様子を解析する
ことが出来る。ひいては軸合わせを容易にし作兼能率の
向上をはかり得る。
According to the present invention, the beam current at any point on the beam transport path can be measured without affecting the beam, and the behavior of the beam under actual operating conditions can be analyzed. In turn, alignment of the axes can be facilitated and productivity can be improved.

〔発明の実施例〕[Embodiments of the invention]

M3図は本発明の一実施例に係わる1疏子ビーム光学鏡
筒を示す概略構成図である。第1図と同一部分には、同
一符号を付して、その詳しい説明は省略する。
FIG. M3 is a schematic configuration diagram showing a single beam optical lens barrel according to an embodiment of the present invention. Components that are the same as those in FIG. 1 are designated by the same reference numerals, and detailed explanation thereof will be omitted.

21〜26はそれぞれC「子銃軸合わせコイル、第2コ
ンデンサ軸合わせコイル、投影レンズ軸合せコイル、縮
少レンズ軸合わせコイル、対物レンズ軸合わせコイルで
あり127〜31はそれぞれ第2図で説明したようなビ
ーム電流検出器のコイル230a〜230eによシミ流
を検出し軸合わせコイルに制御信号を与える制御回路で
ある。
21 to 26 are respectively C's subgun alignment coil, second condenser alignment coil, projection lens alignment coil, reduction lens alignment coil, and objective lens alignment coil, and 127 to 31 are respectively explained in FIG. This is a control circuit that detects a stain current through the coils 230a to 230e of a beam current detector such as the one shown in FIG.

このように構成された嘔子ビーム光学鋭筒の作用を説明
する。
The operation of the thus constructed Yokobeam optical sharp tube will be explained.

上記のようなビーム寸法可変−子ビーム光学鏡筒テハビ
ーム輸送径路上の投影レンズアパーチャ縮少レンズアパ
ーチャ対物レンズアパーチャでさえぎられるビームがビ
ーム寸法変化に対応して変動すると試料面での成形寸法
に応じて亜流密度が変わってしまう。従ってその調整は
煩雑で手間がかかった。
Variable beam dimensions as described above - Child beam optical column Teha Projection lens on the beam transport path Aperture reduction lens Aperture Objective lens If the beam blocked by the aperture changes in response to changes in beam dimension, it will change depending on the shaping dimension at the sample surface. The substream density changes. Therefore, the adjustment was complicated and time-consuming.

そこで、第3図に示すように各アパーチャの下に亜流検
出器コイル2308〜230eを置く、すると偏向操作
等によシ投影しンズアパーナヤでビームがさえ切られて
いるか否かは電流検出器に接続される制御回路28.2
9の出力を比較すればよい。
Therefore, as shown in Fig. 3, subcurrent detector coils 2308 to 230e are placed under each aperture, and then a current detector is connected to detect whether the beam is even cut off by the deflection operation, etc. control circuit 28.2
All you have to do is compare the outputs of 9.

ビーム電流検出器の感度は、第2図に示すような断面形
状の場合、ビーム中心からコイルの中心までの距離をr
1コイルの面積をsl ビーム電流を■−1(1sin
 wt(ただしWはブランキング周波数、tは時間、I
Oは非ブランキング時のビーム電流1コイルの芯材料の
比M磁率をμ、コイルの巻数nとして発生する電圧は、 μ・μoIos V == nw 2πr 代表的な値としr−=l、5J、 S=Icm 、 l
0=1 ttA 。
The sensitivity of the beam current detector is determined by the distance r from the beam center to the coil center when the cross-sectional shape is as shown in Figure 2.
The area of 1 coil is sl The beam current is -1 (1sin
wt (where W is blanking frequency, t is time, I
O is the beam current during non-blanking 1 The specific M magnetic flux of the core material of the coil is μ, and the voltage generated is μ・μoIos V == nw 2πr As a typical value, r-=l, 5J , S=Icm, l
0=1 ttA.

w==4πXl07(20?、1f(z)、n=100
0. n=1000として、 V=1.70(mV’) となる。この電圧を検出することによりビーム電流を知
ることが出来る。
w==4πXl07(20?, 1f(z), n=100
0. Assuming n=1000, V=1.70 (mV'). By detecting this voltage, the beam current can be determined.

〔発明の他の実施例」 第2図に於ける31の電流検出器をクロスオーバ縮少型
の装置にも用いることができる。
[Other Embodiments of the Invention] The current detector 31 in FIG. 2 can also be used in a crossover reduction type device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の成子ビーム光学鏡筒の構成を示す図、第
2図は゛電流検出器の一例を示す図、第3図は本発明の
一実施例に係わる電子ビーム光学鋭部を示す概略構成図
である。 3・・・ブランキング−極、6・・・ビーム寸法変化用
電極、23(la〜230f・・・磁場検出コイル、第
  1 図 # 第2図
FIG. 1 is a diagram showing the configuration of a conventional electron beam optical column, FIG. 2 is a diagram showing an example of a current detector, and FIG. 3 is a schematic diagram showing an electron beam optical acute part according to an embodiment of the present invention. FIG. 3... Blanking pole, 6... Electrode for beam size change, 23 (la to 230f... Magnetic field detection coil, Fig. 1 # Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 2枚のビーム成形用アパーチャマスクおよび側向器を備
え荷電ビームの寸法および形状を可変制御し、少なくと
も1組のブランキング電極をもち該ビームを試料面上に
照射する荷電ビーム光学鏡筒において、上記ビーム輸送
径路中央なくとも1個所に磁場検出コイルを用いたビー
ム電流検出器を1し、ブランキング成極でビームを変調
し、該ビーム電流検出器で電流を検出することを特徴と
する荷電ヒーム光学硯筒。
A charged beam optical column that is equipped with two beam shaping aperture masks and a side deflector, variably controls the size and shape of a charged beam, and has at least one set of blanking electrodes that irradiates the beam onto a sample surface, A beam current detector using a magnetic field detection coil is installed at at least one center of the beam transport path, the beam is modulated by blanking polarization, and the current is detected by the beam current detector. Heem optical inkstone cylinder.
JP19588182A 1982-11-10 1982-11-10 Charged beam type optical lens barrel Pending JPS5986219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19588182A JPS5986219A (en) 1982-11-10 1982-11-10 Charged beam type optical lens barrel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19588182A JPS5986219A (en) 1982-11-10 1982-11-10 Charged beam type optical lens barrel

Publications (1)

Publication Number Publication Date
JPS5986219A true JPS5986219A (en) 1984-05-18

Family

ID=16348536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19588182A Pending JPS5986219A (en) 1982-11-10 1982-11-10 Charged beam type optical lens barrel

Country Status (1)

Country Link
JP (1) JPS5986219A (en)

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