JPS5979533A - Liquid phase epitaxial growth method - Google Patents

Abstract

PURPOSE:To enable epitaxial growth under a supercooling state by a method wherein first and second sliding members are superposed and disposed on a susceptor, a crystalline layer forming material in the solution reservoir of the second sliding member is brought previously to the state of a saturated solution, the second sliding member is moved to drop the saturated solution into the liquid reservoir of the first sliding member and the first sliding member is moved to bring the solution into contact with a substrate. CONSTITUTION:The first sliding member 26 with through-holes 23-25 encasing a crystal material to be formed and the second sliding member 30 with through- holes 27-29 are superposed and disposed on the susceptor 22 made of carbon, to an end section thereof the PbTe substrate 21 is buried. The PbSnTe materials 32, 34, 36 functioning as a buffer layer, an active layer and a confining layer are each entered in the through-holes 27, 28, 29, and these compositions are changed previously by dissolving dummy thin-boards 31A and 31B, 33A and 33B and 35A and 35B along the materials. These solutions are brought to a supercooling state, the second sliding member 30 is moved, the solutions are dropped into the holes of the first sliding member 26, the member 26 is slid, and the substrate 21 is moistened with these solutions.

Description

[Detailed Description of the Invention] Gl) Technical Field of the Invention The present invention is directed to the improvement of the liquid phase epitaxial growth method with a thickness of 1 μm.
It is something to do.

(L)) Technology R-view infrared laser elements are generally made of lead-tin-tellurium.In order to obtain such crystals in a large area and in a thin layer for convenient device formation, , Te/V/L7 lead oxide (Pbi'e), which makes it easy to obtain single crystals with a relatively large area.
pb, )HSnXTet7) Crystal 1 on a single crystal substrate of
14 is currently being formed by an 11th-plane epitaxial growth method.

((2) Conventional techniques and problems Regarding such conventional liquid phase epitaxial growth methods,
This will be explained using FIG.

First, a PbTe substrate 3 is placed in the recess 2 of a support base 1 made of rectangular parallelepiped carbon, and a dummy thin plate 7 is placed in the recess 4.5.6.
, 8.9 is buried. The slide member 10 is made of carbon and has a rectangular parallelepiped shape. In J2 and 13, there is a P for forming the first k+7 buffer layer to be formed on the substrate.
b 1-ysnX'l'e additive 14, Pbl for forming the second active layer; (SnX'l'e material 115, Pbl for forming the third confinement layer. Filler 16f: Filled by varying the X value.

Hydrogen (H2)
The Pb 1-ysnyTe material to be formed on the substrate is melted by introducing it into a reaction tube in a gas atmosphere, and
The components in the dummy thin plate are saturated with a solution of 1-X5nX'I'e. Then the predetermined lI′4! The first layer of Pbl -
Sl'1y-Te (1) crystal layer, 'Is 2 M +
/) Pb 1-xSll X're crystal layer, third
Pb1-ysnXTe crystal layers of Pb1-ysnXTe were successively formed.

However, this conventional method has the drawback that an epitaxial growth layer cannot be formed on the substrate when the l'# liquid, which is the material for forming the crystal layer, is supercooled.

The method of epitaxially growing this crystal layer forming material on a substrate in a supercooled state is to keep the temperature of the solution of the crystal layer forming JJ material in the turtle tank lower than the saturation temperature of the solution by A i"c. This method allows the growth conditions of the epitaxial layer to be stabilized and allows the epitaxial layer to be accurately grown to the desired thickness (the thickness of Δ). This method is increasingly being used because it allows control over

However, in the conventional method, when the temperature of the solution is lowered at a predetermined cooling rate, the cooling component of the solution is deposited on the dummy thin plate. The drawback was that cooling growth was not possible.

0) Purpose of the Invention The present invention eliminates the above-mentioned drawbacks, makes it possible to perform epitaxial growth on a semi-substrate in which the solution of the crystal layer to be formed on the substrate is kept in a supercooled state, and allows the solution to be formed at any desired growth temperature. The aim of this project is to provide a new ``epicary growth force'' method that can control the degree of supercooling (8T) of .

(e) Structure of the invention - To achieve the above object, the liquid phase epitaxial growth method of the present invention includes a support base in which a substrate is embedded, a support base that slides on the support base, and a crystal layer to be formed on the substrate. a first slide member having a liquid reservoir for containing a liquid;
A second slide member having a liquid reservoir that moves on the slide member and houses the material of the crystal layer to be formed on the substrate and the dummy thin plate.
a slide member, melting the moon flakes in the liquid reservoir of the second slide member at a predetermined temperature to form a saturated solution of the crystal layer forming material in advance, and moving the second slide member. to cause the saturated solution to fall into the liquid reservoir of the first sliding member, and then further move the first sifting member to bring the solution into contact with the substrate to form a crystal layer on the substrate. This is a characteristic feature.

(f゛) Embodiment of the Invention An embodiment of the invention will be described below in detail with reference to the drawings.

From Fig. 2 to Fig. 6, liquid A''1'' was obtained by the method of the present invention.
FIG. 7 is a sectional view showing the second step in the epitaxial growth process, and shows the temperature change over time in the heating furnace during the growth process.

As shown in FIG. 2, the phase epitaxial growth apparatus used in the PJ method of the present invention has a support base 22 made of a rectangular parallelepiped-shaped carbon member in which a Pt+Te substrate 21 is embedded, and a support base 22 made of a rectangular parallelepiped-shaped carbon member. "Support stand 22"
A first slide member 26 having through holes 23, 24, 25 for accommodating the crystal material to be formed on the substrate; , h (11 through holes 27.28.2!J' for accommodating the crystal layer forming material to be formed on the plate), and a second slide member 30 having 11 through holes 27, 28, 2! The second slide members are arranged at intervals of about 10 cm;
The intervals between the fi holes are narrow as shown in the figure.

A tammy thin plate 31A of Pb]zsnX'I'e having the same composition (X value) as the buffer layer forming material of the first M2 is placed so as not to run along the side wall inside the through hole 27 of the second slide member 300. 3] Apply only 13 and install the hole 2.
7 contains a material 32 for forming a first buffer layer to be formed on the substrate.

Next, a material having the same composition as the active layer forming material of the second layer (lf) is applied to the side wall of the through hole 28 of the second slide member 30 (lf).
Dummy thin plates 33A and 3313 of Pb I-X:'+nyTe of
'b 1-zSnXTe (7) Accommodates IA charge 34.

The same composition as the confinement layer forming material of the third layer (1
m) Pb, -XSrtXTetutamii i'tNN35
A, 35B for forming the third confinement layer to be formed on the substrate in the through hole 29 (Q Pb
1-X:5TIXTe) Contains 36 particles.

This J, the eel support 22, the first slide member 26, and the second slide member 30 are inserted into a reaction tube in a hydrogen (H2) gas atmosphere, and first, as shown in FIG.
The through hole 27 of the second slide member 3° at a temperature of 00°C.
28. Melt the crystal layer forming material 32゜34.3G in 29 and make dummy thin plates 81A, 31B, 33 and 33E35A.
, 35'J3 are dissolved in each crystal layer forming material to the extent that the solution of the crystal layer forming material is saturated. At this time, at a temperature of 500°C)) b, −XSnXT
A saturated solution of e is formed in all the through holes 27, 28, 29.

Next, as shown in FIG. 2, the second slide member 30 is moved in three directions (arrows) to achieve the deaf state shown in FIG.

And Pb1zsnxTe for forming the third layer at 500℃f
t7) Saturated melt o, 36 to the first slide part 4: J' 2
6 into the through hole 25.

Next, in this state, the temperature of the heating furnace is set to Tg=510°C, and the dummy thin plate 33]3 is placed on the second M active layer forming material 34.
．． Dissolve the components of 33A in pbl at 510°C.
yshXTe no saturated solution g! 3, the second slide member 30 is moved in the direction of arrow C in FIG. 3 to bring it into the state shown in FIG. 4. and Pb1-Xs for forming the second layer.
A saturated solution of nyTe at 510°C is dropped into the through hole 2 of the first slide member 26.

Next, in this state, the temperature of the heating furnace is set to 1゛3=520 in Figure 9.
In this state, the components of the tammy thin plate 3], A, 3113 are dissolved in the buffer layer forming material 32 of the first layer 520
After forming a saturated solution of Cvc:b-PL)I-XSnXTe, the second slide member 30 is moved in the direction of the arrow in FIG. 4 to bring it into the state shown in FIG. and the first
The saturated solution 32 at 20° C. is applied to the first slide member 26
into the through hole 23 of.

In this way, it is easy to provide a saturated bath at temperatures of 520° C., 510° C., and 500° C. for forming the first, second, and third layers11).

While lowering the temperature of this heating furnace, move the first slide member 26 in the direction of the arrow 1j2 in FIG. By bringing the buffer layer forming material 32 in the through hole 23 into contact with the substrate zl, a first J?41 buffer layer can be formed on the substrate in a supercooled state of 5°C.

Next, while lowering the temperature of the heating furnace, the first one was heated to 505℃.
The slide member 26 is moved in the direction of arrow E, and the board 21 is moved.
''Secondly, the through hole 24 of the slide part 26 is installed, and the material 34 of Pb1-χSn; -P
A crystalline layer of b1 zsnzTe can be formed from a supercooled state of 5°C.

Next, the first slide member 26 is moved in the direction of arrow E at 495° C. while lowering the temperature of the furnace, and the third hn inside the through hole 25 of the slide member 26 is placed on the plate 21.
Forming rD Pt)1. ．． 5nXTe material 36 is brought into contact with the third confinement layer P1')l-Xsnx on the substrate.
A crystalline layer of Te can be formed from a supercooled state of 5°C.

Here, if the third layer confinement layer forming material is formed in a saturated solution at a temperature of =L95'C, Pb1-χ at 4.95°C
A saturated solution of So,<'I'S is formed, which is preformed on the second slide member and then dropped into the through hole of the first slide member, and is heated to 1.95°C using this solution.
If a crystal layer is formed from a saturated solution, epitaxial growth from a saturated solution is possible as in the conventional method.

■ Effects of the invention - As stated above, the method of the present invention enables epitaxial growth in a supercooled state with arbitrary temperature differences, and the interface between the plate and the epitaxial layer formed thereon is clearly defined. This has the effect of providing an epitaxial layer, and if an infrared laser device is formed using this crystal, the characteristics of the device will be improved.

FIG. 7 is a diagram showing temporal changes in the heating temperature used in the method of the present invention.

In the figure, 1.22 is a support, 2.4 and 5.6 degrees are recesses, and 3.21 is a PbTe substrate. , 8.9.31A.

;31B, 33A, 38B, 35A, 35B
is a dummy thin plate, i.

is a slide member, 11.12.13.23, 24°25
．． 27, 28, 29 are through holes, t+, 32ij: buffer layer forming material, 15.34 are active layer forming materials, 26 is the first slide member, 30 is the second slide member, A, B
, C, D, E are arrows indicating the metuid direction, TI, T, .
T3 indicates the heating rehearsal temperature.

Figure 1 Figure 5 Figure 6 One 141tI

Claims (1)

[Claims] A support base in which the substrate is buried, and a γf (
A slide member of Il having a reservoir, and a second slide member that moves on the first slide member and has a reservoir containing the material of the crystal layer to be formed on the nail plate and a dummy thin plate. The material in the liquid reservoir of the second slide member is melted at a predetermined temperature to form a saturated solution 6'i of the crystal layer forming material in advance, and the second slide member is moved to record fiiJ. After dropping the saturated solution into the liquid reservoir of the first slide member, further move the first slide member to bring the I# liquid into contact with the substrate to form a crystal layer on the substrate. Liquid phase epitaxy A1 characterized by
/I/ Growth method.