JPS5979420A - Multi-channel magneto-resistance effect type magnetic head - Google Patents

Abstract

PURPOSE:To apply a desired bias magnetic field to each MR element of each channel by providing two current supply power source terminals in common to all channels for a bias magnetic field generating means concerning each channel. CONSTITUTION:A current source for generation of bias magnetic field is connected between a connection part 22c of both foot parts of an E pattern of a channel CH1 at one side which is positioned at the most outerside and a center foot part 22s of a channel CHm positioning at the other side. In such a way, a bias conductor 22 is set in parallel to paired MR elements MRn1 and MRn2 and in series between adjacent channels respectively. Then bias magnetic field generating current source terminals tb and tb' are led out of both ends of the conductor 22, and ib1+ib2 is supplied between terminals tb and tb' from said current source. The bias magnetic field generating current (ib1+ib2) is supplied to the conduction parts corresponding to the elements MRn1 and MRn2 of a conductor 21. Thus bias magnetic fields HB and -HB which are opposite to each other are applied to each pair of MRn1 and MRn2.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a multi-channel magnetoresistive magnetic head.

BACKGROUND ART AND PROBLEMS Conventional magnetoresistive (hereinafter referred to as MR) type reproducing magnetic heads, especially the so-called rear type, which is placed at a position set back from the surface in contact with the MR single-element magnetic medium. For example, θ is an example of Ni. - On an insulating magnetic substrate (1) made of Zn-based ferrite, there is a strip-shaped conductive film (2) that serves as a current path as a bias magnetic field generating means for increasing the bias magnetic field for a single MR element by ζ electromagnetic induction, etc. is deposited, and an MR effect element (4) made of, for example, a Ni-Fe alloy or an N1-Go alloy thin film is formed on this via an insulating N (3), and further on this. Ni-Fe through insulation J??i f51
A pair of magnetic layers (6) and (7) made of a magnetic alloy or the like are held facing each other in a direction across the element (4) with a required spacing therebetween, and one of the magnetic layers ( The outer end of 6) faces the base (1) via at least one of the insulating layers (3) and (5), so that a magnetic gap g is formed, and the other The outer end of the magnetic layer (7) is connected to the base body (1) through windows drilled in the insulation M (3) and (5). Then, these conductive layer (2), MR single element 4), magnetic N (
6) and (7) are coated with a non-magnetic protective layer (8), and on top of this a protective substrate 00) is formed with an adhesive layer (9).
is made to be 1'lH. And both substrates (1
) and 00), the facing surface (11) with the magnetic recording medium
A magnetic gap g is formed on this contact surface (11), and a magnetic path including the magnetic gap g and the MR single element 4), that is, the magnetic substrate (1)-magnetic gap g-combined magnetic layer (61-MR element (4)-magnetic layer (7)
-Magnetic substrate (1,1 magnetic path can be formed.

In such a configuration, a current IB for generating a bias magnetic field is applied to the conductive layer (2). 3: When a required bias magnetic field is applied to the MR single element 4) and a current I is caused to flow through the MR single element 4), the recording recorded on the magnetic recording medium that is in contact with or facing the magnetic gap g. Shinso+ by magnetization
The research field is applied to the MR single element (7I), and an electrical signal, that is, an output signal, is obtained from both ends of the MR element (4) due to a change in resistance depending on the voltage.

However, such an MR effect type magnetic head, especially a rear type magnetic head in which magnetic bodies are arranged close to each other,
The problem is the nonlinearity of its characteristics.

However, in this type of magnetic head, in order to exhibit a quadratic curve as shown in Figure 3, the MR single element magnetic I]-resistance characteristic is Element 4)
When a high magnetic field ■]B is given to the sign (12
) is given, the MR single element 4)
The output signal due to the resistance change in the figure is indicated by the symbol (13
), resulting in an asymmetrical distorted signal as shown in the figure. However, the magnetoresistive characteristics of the MR element itself exhibit a widening characteristic as shown in Figure 4, and there are parts of the characteristic that have uneven linearity, so the required bias magnetic field With HP', it is possible to obtain a symmetrically distorted output signal (13') with no ζ distortion with respect to the signal magnetic field (12').

Some of the dirt is due to the influence of the demagnetizing field that occurs noticeably on both end faces of the MR single element, but as in the case of the rear type configuration explained in Figs. This seems to be due to the fact that in the case where the magnetic layers (6) and (7) are arranged close to each other, the influence of such a demagnetizing field on characteristic -1 becomes smaller.

A differential configuration has been proposed to eliminate such nonlinear line segments in a single MR element. This differential type MR magnetic head consists of 2 IT! It's M R elemental Ml
1 and MR2, each MR single element Rz and M11
Terminals t1 and t derived from each other end of 2.

are connected to independent constant current sources S1 and S2, and also connected to the input terminal of a differential amplifier Amp. Both MRs
A predetermined potential, for example, ground potential li, is applied to a common terminal t3 derived from the connection midpoint of elements Mlh and MR2, and a constant current i is applied in the opposite direction to each MR single element Ri and MR2. A bias magnetic field HB is applied to each MR single element lh and MR2 in opposite directions in a direction orthogonal to the direction. According to the differential type magnetic head having such a configuration, when a human input signal magnetic field common to each MR single element R1 and MR2 is returned from the magnetic recording medium, output signals 1 having mutually different polarities as shown in FIG. zu-(141) and (142) are 5. A signal (14) is obtained from the output terminal tout of mp to the amplifier, which has positive and negative signals and has a positive and negative polarity, that is, nonlinear components have been canceled out.

According to such a constant current type differential MR magnetic head,
The MR single-element nonlinear component can be canceled out, and a reproduced signal without symmetrical distortion can be obtained. However, in this type of magnetic head, three terminals t1 to L3
It requires two independent signal lines connected to the differential amplifier Amp and two independent constant current sources. Therefore, when applied to a multi-channel magnetic head, if the number of channels is n, it is necessary to derive at least 2n+1 terminals for this multi-channel magnetic head, and at least 20 constant current sources. Is required.

In addition, since it is a constant current drive, its power consumption is large.
The circuit size also increases, making it unsuitable for application to multi-channel magnetic heads where n is 10 to 50, for example.

In order to overcome these drawbacks, it has been proposed to connect a pair of MR single elements in series, apply a constant voltage to both ends of the pair, and take out the output differentially from the connection midpoint of the pixel elements. It was done.

According to such a differential magnetic head driven by constant voltage drive, the second harmonic component can be canceled in the same way as in the case of constant current drive described above, and the sensitivity at the time of iR power is lower than that of the constant current drive. This is twice as much as in the case of driving, and the SN ratio and signal power at the same power consumption are also the same as in the case of constant current driving. The multi-channel magnetic head can simplify the configuration because it eliminates the need to independently install two constant current sources for each channel, eliminates the need for multiple terminal leads, and eliminates the need for multiple wiring lines. brings great benefits.

A so-called self-bias type MR head driven by constant voltage has already been proposed. Examples of devices employing this self-bias type structure include the one disclosed in Japanese Patent Application Laid-Open No. 52-23920, and the so-called barber pole type. These are configured so that the direction of current flowing through each MR element has a required angle with the easy magnetization direction of each element, and the current flowing through the element generates a bias magnetic field having a required angle with this direction. .

For example, in a barber pole type MR head, a plurality of biconductive bands made of, for example, Au are formed obliquely to the direction of easy magnetization force along the longitudinal direction of the thin film MR element, just like the diagonal pattern in a barber pole. In this case, when attempting to reduce the size of the MR element in order to reduce the channel pitch in a multi-channel magnetic head, conductive bands It became necessary to narrow the spacing between the lines,
Along with this, the effective resistance of the MR element becomes smaller.

-(s) There are various problems such as difficulty in handling the output signal.

OBJECTS OF THE INVENTION The present invention provides a multi-channel magnetoresistive magnetic head that eliminates the above-mentioned drawbacks, and in particular, connects the current supply power terminal of the bias magnetic field generating means for each channel to, for example, a metal 51-channel. 2 in common
By simply providing 11111, the required bias magnetic field Iy can be applied to each MR element of each channel, thereby simplifying the configuration.

Summary of the Invention The basic structure of the present invention is shown in FIG.
Anti-effect element (MR element) MRnl and MRn
2 will be provided. Then, constant voltages Vl and V2 are supplied across the MR elements MRni and MRn2 in each column, and each MR element old? . , and MRn2 form a predetermined angle, for example 90°, with each current i leading thereto, and bias magnetic fields -IIB and -IIB of equal magnitude and opposite directions are applied along the MR element film. Further, an output terminal tsn is derived from the midpoint of the series connection of MR elements MR+1° and MRn2, and the output from differential amplifier A is differentially taken out.

Embodiment 4Nf Fig. 8 shows an example of the electrical connection mode of a multi-channel magnetoresistive magnetoresistive magnet according to the present invention.
Each channel Clh, C112, C1h...
MR element MRn of each column explained in FIG. 7 with respect to Cl1m.

and MRn> (Mln11 and MR12+ MR21
and MR22, MR31 and MRi2+...MR
m□ and MRm2) are provided, and a terminal t Sn (LSi + '82 +1',
83...tsm is derived. In addition, the MR element liver of each column in each channel C4 (n, 11 and MRn
2 are connected to respective predetermined voltages V1. It is connected in parallel to the common feed lines β1 and 12 to which 'v'2 is applied.

Each of these MR elements MRn1 (MRt1+ MR21...
・MRml) and MRn2 (MR12, MR22...
MRm2) is a metal thin film having an E-shaped pattern having a magnetoresistive effect, for example, as shown in FIG.
-Fe sparrow alloy or old -CO alloy thin film (21)
formed by its bilateral legs (211) and (21
2) are connected to the lines ρ] and RI2 to which the voltages Vl and V2 are applied, and the signal output terminals tsn (tst, ts21 HHHtsm) are connected to the central leg (21s), respectively.
) is derived.

Then, each leg (2h) and (21s) of the thin film (21)
), (21s) and (212), respectively.
Rn1 and MRn2 are formed. In this way, each MR element MRn and MRn2 of each channel CHn are connected in series with L-, so that a current i in the same direction is passed through them. The thin film (21) having an E-shaped pattern is formed symmetrically with respect to the center fiber that extends in the center of the medium leg (21s), and both MR elements MRn□ and MR
n2 are made to have the same characteristics.

These fi, MR elements Mllnl and MRn,
For example, bias magnetic fields I (8 and -HB) which are orthogonal to this current direction and opposite to each other are applied externally. In particular, in the present invention, C1 is a means for applying a bias magnetic field in the opposite direction to the MR elements MRn1 and MRn2.
By electromagnetic induction. As an example, as shown in FIG. 10 of 4J, the MR thin film (21) having an E-shaped pattern of magnetoresistive holes and constituting the MR elements MRnt and MRn of each column. Similar eg E? A bias conductor (2
2) is formed by breaking f#. bias conductor (22)
The two legs of the figure 5 pattern (22+) and (2
22) is shaped to have a connecting part (22c) for connecting it to the companion car, and each adjacent channel sequentially connects to the central leg part (22s) of an E-shaped pattern, that is, a pair of MR elements M
The part corresponding to the connection midpoint of Rnl and MRn2 is connected to the connecting part of both legs of the conductor pattern (22) of the next channel, and the part corresponding to the connection midpoint of the channel C1)1 located at the outermost stage is Connecting part of both legs of pattern (22c
) and the center leg (22s) of the other similar channel Cl1m, a current source for generating a bias magnetic field is connected. Connect this bias conductor (22
) is a pair of excitation R elements. , and MR,2, -C is arranged in parallel, and adjacent channels are arranged in series, and the bias magnetic field generation current source terminal t is connected from both ends of the arrangement.
Derive b and tb'. Then both terminals tb, tb
'I bi +' from the current source for generating bias magnetic field between '
b2 to each element M Rns and M of the conductor (21)
By passing a bias magnetic field generating current 1bt+fb2 through the current-carrying parts corresponding to Rn2, the MR elements MR in each column are
Bias magnetic fields HB in opposite directions to n1 and MRn2,
-Can darken HB.

As described above, in the present invention, the bias conductor (22) is provided, but the current conduction mode in this case is particularly important for the phantom MR element M 11 n ! in each channel. and M
Rn2 is connected in parallel), and the channels are connected in series, so the current-carrying terminal for generating a high-dus magnetic field is connected to a common power supply for all channels as shown in the figure. 'Mil child tb
, Lb'', the configuration is simple.

Next, the specific structure of the double multi-channel MR type (ejaculation belly button 1') according to the present invention will be described in
This will be explained with reference to the figure. FIG. 11 is an enlarged plan view of essential parts of an example of a multi-channel MR type magnetic head according to the present invention, FIG. 12 is an enlarged sectional view taken along the line A-A, and FIG. 'Enlargement on the B-B line of 'I' Li7i i7 old nel is not shown. (23) is partially provided with a magnetic substrate that becomes the core, for example, a magnetic substrate (23) made of Nt-Zn ferrite. , on which a bias conductor (22) and each feed line 1 of constant voltage V1 and v2 are connected.
Conductors (31) and (32) constituting conductors 11 and β2 are deposited, and each channel Cl1n (CIL+, CI+2
...C11m) MR elements MRn□ and MR of each column
n2 (MR1'1 and MR12+ MR21 and MG2
The MR thin film (21) forming the gates Rm1 and MRm2 is deposited in a desired pattern. These bias conductors (22), insulating layers (24) and MR
The thin film (21) is sequentially deposited on the entire surface of the magnetic substrate (23) by vapor deposition, sputtering, etc., and then
Pattern these. In this case, in order to increase the adhesion strength of this conductor layer to the base (23), for example, a Cr layer as an F layer may be applied, for example, to
It is deposited to a human thickness by vapor deposition or sputtering. Then, as described above in 1-, a conductive layer, for example, an Au metal layer, which forms the high-speed conductor (22) and the power supply conductors (31) and (32), is deposited by vapor deposition, sputtering, etc. Then, on top of this, Si3N4 or 1203, etc., which forms an insulating film (24), is deposited on the entire surface, and further on top of this, MR thin film 1 is deposited.
For example, a Ni--Fe alloy film or a N1--Go thread alloy film forming m(21) is similarly deposited on the entire surface by vapor deposition, sputtering, or the like.

After that, these MR thin film layers and one of the dirt
For example, the MR elements MRn1 and MR elements of each column, which go to each channel ClIn, are selectively connected to the color tIN, the dirt l·° conductor Mlr@, and a part of the upper surface j-. l
'jRn2, a part where the MR thin film (2I) of the above-mentioned 8-shaped pattern is formed, a part where a similar bias conductor is formed, and a constant voltage V1. Except for the portion forming the power supply conductor of V2 and the portion forming the terminal portion, the other portions are sequentially removed by etching using, for example, a spacing mask or using the upper layer pattern as a mask. However, in this case, it is desirable that the etching has a trapezoidal cross section that becomes narrower toward the upper layer. Next, history is to Al″?>°!ll1lI2!
A thin film (21) having the above-mentioned 18-shaped pattern is formed by selective etching. These etchings are performed by wet etching or dry etching, eg, chemical etching or ion etching.i4! Ru. In this way, the 8 elements forming the MR elements MRr+1 and M1112 in each column
An MR thin film (21) in a figure-shaped pattern is formed, and a bias conductor (22) in a figure-8 pattern and a power supply conductor (
31) and (32) are formed. Here, the bias conductor (22) has a connecting portion (22c) connecting the bilateral leg portions (22z) and (222) of the bias conductor (22), for example, the front channel of the adjacent channel. The central leg (2) of each conductor (22) of ClIn-+
2s), an extension part (22c'') extending to a position opposite to each other with the connecting part (22c) in between is provided.Furthermore, the power supply conductors (31) and (32) are connected along the arrangement direction of each channel ClIn. It can be formed as an elongated band pattern.

Next, the bias conductor (22) is placed on the end of the medium heat leg (22s), on the extension part (22c'), and on each feed conductor (31).
and (36) are drilled into contact windows (33) for connecting wiring conductor layers to be described later to the insulating layer (24) on the portion corresponding to each channel ClIn in (32).

Then, cover these patterns and cover the entire surface with, for example, 5
A non-magnetic insulating layer 1'M (37) made of i02 and having different processing and notching properties than the insulating layer (24) is deposited using a well-known technique. The thickness of this insulating layer (37) is the thickness that defines the magnetic gear ζ, which will be described later, and the magnetic gear no. This insulating layer (37) is selectively etched (for example, by wet JJQ etching or dry etching such as plasma etching) to form each leg of each E-shaped MR thin film (2I) of each channel. Windows (381) and (382) are formed between the parts at positions adjacent to each pair of MR elements Rn i and MRn2, respectively, so as to expose a part of the surface of the magnetic base (23). M
Each leg part (211), (212) of R boxin (21)
, people windows (3Ut) on each end of (21s)
, (392), (39s) are drilled and ζ these legs (2h), (212), (21s)
A portion of each surface is exposed to the outside. Furthermore, at the same time as each of these windows is drilled, the insulation IN (37) on the previously drilled windows (33) to (36) is removed by esonanging, and these windows (33) to (37) are opened again to the outside. Let's face it.

Next, a Ni-Fe alloy layer or the like is formed by vapor deposition, sputtering, etc. over the entire surface, including the inside of the windows (38+) and (3B2) and the position crossing each MR element Mlln1 and Mlln. A magnetic layer is formed and selectively etched by a wet method or a dry method in the same manner as described above to form each MR element MRn1 and MRn.
Corresponding to 2, the magnetic pairs of 1m (41t) and (4
12).

(421) and (422) are formed across both side edges of each MR element via an insulating layer (37), and are opposed to each other with a required distance G maintained between them in this MR element. Magnetic layers (4h) and (412), (4
The widths extending over the side edges of the MR element (2t) and (422) are each selected to be approximately 1 μm when the width of the MR element is 5 μm, for example. And here, a part of the magnetic layers (412) and (422) on the - side is the insulating layer (37).
) is connected to the magnetic substrate (23) through the windows (38z) and (382). - force, substrate (23
) on magnetic layers (411) and (412).

At least each window (33) to (36), (391) except for the part where (421) and (J22) are arranged
(392) For example, a conductive layer (40) is deposited over the entire surface of (39s) and selectively etched to form a layer between each window (391) and (36).
and (35), and between the windows (33) and (34), and the wiring part used to lead out the external output terminal tsn from the window (39S) is removed by etching. do. Then, one bias power supply terminal tb is led out from the extension (22c') of the bias conductor (21) of the channel CIl+ at one end, and the other bias power terminal tb is led out from the wiring part (40) connected to the center leg (22s) of the channel at the other end. Terminal L1]' is derived.

Then, for example, 5
A protective film (43) made of i02 or the like is applied, and a part (44) of a crow-like inorganic or organic adhesive is applied.
3+j A protective substrate (45), such as a glass substrate, is bonded. Then, the magnetic body (
23) for each channel ClIn pair of each MR single element pair 1' magnetic layer (4h) (421
) is cut and polished to form a surface facing the magnetic recording medium (5).
1) Form. In this way, a magnetic gap g1 and g2 having a gap length defined by C by the thickness of the non-O insulating layer (37) is connected to the magnetic base (23) facing the ζ contact surface (51). and the magnetic layers (4h) and (42t,). According to such a configuration, the magnetic layers (4h) and (42t,) of each column are formed for each channel Ctln.
12) and the magnetic substrate (23), each row of closed magnetic paths including the magnetic gap g and g2 and the MR single elements MRnl and MRn2 is formed between the magnetic layer (41) and the magnetic substrate (23).
) - Magnetic substrate (23) - Magnetic layer (412) (422
) - A multi-channel magnetic head formed in magnetic layers (41t) and (422) is constructed.

The method for manufacturing a multi-channel MR type magnetic head according to the present invention is not limited to the above-mentioned example. ) and the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) constituting the MR thin film (21) which constitutes the MR thin film (21) that constitutes the MR thin film (21) which constitutes the MR thin film (21) are then patterned. and the bias conductor (22) will not be misaligned to the other party 5, and the insulation #(
24), the bias magnetic field applied to each MR single element lln+ and liver n2 can be changed reliably and with high efficiency. Further, the insulation r@(24) is connected to the gap g1. Since it is removed in g2, this canon f? l1g2's Gichutsubu 4'
4 is defined only by the thickness of the insulation 1t4 (: (7)), so this gap length can be easily set. 37) have mutually different etching properties, for example, Al2O3.

When the structure is made of S i 3N 4 and 5in2, when selective etching is performed, for example, by plasma etching on the upper layer 5i02 insulation JM (37), the lower layer Al2O3 or Si3N 4 is hardly etched. There is an advantage in being able to prevent etching effects from occurring.

In the example shown above, each channel is provided with one pair of MR single elements, but a configuration in which a plurality of pairs of MR elements are provided is also possible.

In addition, in the example given above, when applied to a rear type MR magnetic head, when the end face of the MR single element is placed so as to face the surface in contact with the magnetic medium, ζ is also sandwiched between the MR single elements. Similarly, when magnetic bodies are arranged close to each other, these M
Since the R single element magnetoresistive characteristic shows a quadratic curve, it can also be applied to such a so-called front type MR magnetic head.

Furthermore, as described above, in the present invention, a bias magnetic field generated by energizing the bias conductor (22) is applied to each MR single element Rnt and MRn2 from outside the MR element. Substantially, both MR elements MRn of each channel pair, and Ml?
, 2 may become non-uniform, resulting in insufficient cancellation of nonlinear components. Therefore, in this case, considering the effect of this self-bias, the external bias magnetic field is applied to each MR single element Iln□ and M
It is desired that there is no difference regarding Rn2. For example, the currents jb1 and ib2 flowing along each MR single element Rnt and MRn2 of the aforementioned bias conductor (22) for obtaining an external bias magnetic field can be used to control the self-biasing of each MR single element Rro and MRn2. Set the value according to the influence of That is, as can be seen from Fig. 10, one M
The direction of the current i passing through the R element liver □, and the external
The legs (2) of the conductor (22) for increasing the magnetic field
The current 1bl flowing between 23) and (22+) is in the same direction as the other MR element MRn.
The direction of the current i flowing through the conductor (22) and the current jb2 flowing between the legs (22s) and (222) of the conductor (22) for applying an external high-speed magnetic field to it are opposite to each other. 71 comes. In other words, for one element MRn□, depending on the direction of the self-high "1" magnetic field and the external
In the same direction as the B-Iass magnetic field, the B-Iass magnetic field acts in the direction of strengthening due to the self-bias, and for the other element MRnz, the direction of the self-bias magnetic field and the externally applied bias magnetic field are in the opposite direction, and the bias magnetic field weakens due to the self-bias. Acts in the direction of That is, now pixel M
substantially 5. to Rru and MRn2. Magnetic field H+
and R2 are as follows. Here, I-IFJ and HB are each element MR.
The external bias magnetic fields to nt and MRn2, HMn and HMR2 are the self-bias magnetic fields of each element MRnx and MRn2.

By the way, in reality, the contribution rate A of the magnetic field due to the current ib flowing through the conductor (22) which acts as a bias magnetic field of the MR single element, and the bias magnetic field of the magnetic field due to the current j flowing through the MR element itself, which acts as "ζ". This is different from the ratio B. For example, as in the above-mentioned magnetic node, the lower f (15 magnetic 11 base (23) - magnetic layer (
41) ((lx) (412)) MR single element magnetic M (42) ((42t) (422
) If a closed magnetic path is formed by the height of the conductor (22), and the laminated portion of the MR single element of the conductor (22) is surrounded by this closed magnetic path, then , its contribution ratio can be considered to be almost 1, but since the MRR element itself faces outside the closed magnetic circuit through the gap G between the magnetic layers (41) and (42), Due to the leakage of magnetic flux, the contribution rate B is B·g1, and according to actual measurements, B/ζ 1/2 to 415.

On the other hand, for a differential type configuration, both MR elements MRnt.

The magnetic fields H1 and -R2 that should be substantially applied to MRn2 are:
Since the condition of Hr −It 2 needs to be satisfied, the currents ill and il for I(□ and H2()-)
Therefore, the currents ibs and ib2 can be selected as follows.

The legs (22s) of the 27f body (22) and (
221) and (222), along each MR single element Rn and MRnz, respectively) Current ib+ + ib2 flowing through each side stl and st2 77H A different note (3)
The current value based on the formula is (↓).
2c) ”, between the power supply positions P of
Obtained by setting R2 to the required value. For example, as shown in FIG. 14, each leg (221) and (222) has a resistor R made of a resistor layer set to a required resistance value, respectively.
It can be set by intervening the machine and 1 and 2. The setting of the resistances R1 and R2 of each resistor is, for example, the setting of the specific resistance of the back (for example, the resistor), the film thickness, the film width, etc., and the setting of the connecting part (2
2c) and the connection position P of the feeder line to 1110 part (2c)
2x) and (222), etc. can be obtained. .

Furthermore, in the above example, each side s of the conductor (22)
By setting the resistance values 171 and R2 related to b and st2, the currents ib1 and jb2 passing through each side sr1 and sh are set to the required values to create a substantial magnetic field due to the self-bias of each MR single element Rn1 and MRn2. However, in some cases, the self-bias that flows into these MR elements MRn1 and MRn2 is transferred to the bias correction conductor (L7) arranged separately from the bias conductor (22). It is also possible to cancel the magnetic field by a magnetic field generated by energization. As an example of this case, for example, as shown in FIG.
One bias correction conductor (50
), and a required current ic in the opposite direction to the current i flowing through the MR single element is applied to it. This bias correction conductor (50) is, for example, a bias conductor (50) as shown in FIG.
22) It can be formed by placing a thin conductor underneath with an insulating layer (51) interposed therebetween. In this way, the bias
The magnetic field generated by energization of conductor-1 for pins is exactly M
The self-bias magnetic field generated in the R element can be canceled out.

In addition, the influence of self-bias of these MR elements is 131
Needless to say, the means for generating the bias magnetic field according to the invention described above are also included! A pair of MR elements MRn+ and M
The present invention is not limited to the case where ζ is parallel to Rn, and adjacent channels are connected in series, so to speak, in a 1x chain configuration.

"Effects of the Invention" - As described above, according to the present invention, an inverse bias field of 1 HL is applied to each of the M and R elements, and outputs are taken out differentially. A bias conductor (22
) is made into a chain type pattern in which the pair of MR elements MRnt and 2 are connected in parallel, and adjacent channels are connected in series, so that a common current source for all channels, that is, 2 fl? i+ terminal t
Since only the derivation of b and tb' can be performed, the structure can be simplified, the manufacturing can be simplified, and the track pitch can be reduced, and the benefits as a multi-channel magnetic node can be improved. It is.

[Brief explanation of the drawing]

1121 is an enlarged plan view of the main part of the magnetoresistive magnetic head, FIG. 2 is a sectional view taken along the line A-A, FIG. The figure is a magnetoresistance characteristic curve diagram to explain the ratio-to-magnetism, and the fifth and first one is a differential type magnetism driven by constant current! 1 (A configuration diagram of an anti-effect type magnetic head, FIG. 6 shows its output waveform, 1, FIG. 7 is a basic configuration diagram of a magnetic head according to the present invention, and FIG. 8 is an electrical connection diagram of an example of the present invention. Figure 39 is a line layout configuration diagram of an example of the magnetoresistive element of the magnetic head according to the present invention, the first
Figure 0 is a layout diagram of an example of the bias conductor between the bias source lt, if'', and Figure 11 is a linear enlargement of the main part of an example of the magnetic head according to the present invention. and 1st (Figure 3 is an enlarged cross-sectional view on the line A-Δ and line B-B in Figure 11, No. 141'), 1 is a pattern diagram of an example of a high-strength magnetic field generating means for the magnetoresistive element. , FIG. 15 is a pattern diagram of a magnetic field 71' having a bias correction conductor for erasing the self-bias of the magnetoresistive element, and FIG. 16 is a 91% enlarged 1-plane view thereof. MRn+ and MRn2 (MR1'1 and MRs2+ M
R2 and liver 22...) are magnetic) anti-resistance effect elements, (2
1) is a tW crotch having a magnetoresistive effect, (22) is a bias conductor, (23) is its magnetic substrate, (24) and (3)
7) is an insulating layer, (41+) (4]2) (4
21)'(422> is the magnetic layer, (45) is the upper layer 5 (
It is a stupid board. 104 Figure 1 7 Figure 2 Figure 4 Procedural amendments February 15, 1980 Mr. Kazuo Wakasugi, Director-General of the Patent Office (Mr. Chief Adjudicator of the Patent Office)■, Indication of the case 1988 Patent Application No. 190186 2. Invention
Name: Multi-channel magnetoresistive magnetic head 3, relation to the person making the correction case Patent applicant address: 6-7-35, Kitashinyo, Tokyo Parts Store Name (21
8) Sony Corporation Representative Director Norio Ohga 4th Deputy Managing Director 1-8-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo (
New graduate building) 6. Number of inventions increased by amendment (1) In the specification, page 4, line 6, ``Incidentally, the MR element itself'' is corrected to ``Incidentally, in the case where no magnetic material is in close proximity to the MR element.'' do. (2) Ibid., same page, line 12, “occurs noticeably” is “occurs”
I am corrected. (3) On the same page, in the bottom three lines, "nonlinear line segment" is corrected to "nonlinear component." (4) Same, page 7, line 1, ``It will be doubled,'' will be corrected to ``It will be halved,''. (5) On the same page, in lines 2 and 3, ``signal power also'' is corrected to ``signal power is''. (6) Same page, same page, line 3, ``and each'' is corrected to ``and, compared to a constant current type differential MR magnetic head, each.'' (7) Same, same page, line 10, ``iwayuri'' is corrected to ``so-called.'' (8) Ibid., page 8, line 10, next to “Arises.” [Also,
Bias conductor terminals for applying a bias magnetic field are required at the midpoint of the two MR elements and on both sides thereof, and three bias conductor terminals are required for each magnetic head element. Therefore, a multi-channel magnetic head requires a large number of terminal leads. ” to join. (9) Same page, 3 lines from the bottom, correct ``Yonashite'' to ``1''. 00) Same, page 9, line 11, "output differentially from differential amplifier A" is corrected to "output from amplifier A." (11) Same, page 12, line 3 "Connection part" [Connection part (2
2C) Correct it as J. I am corrected. C3) On the same page, in the 5th line from the bottom, correct "AQ203 etc. to be applied," to "AQ203 etc. to be applied,". 04) Same, page 15, line 10, ``However,'' is deleted. 051 Same, page 18, line 13 “(412) and (4
22) Correct J to r (421) and (422) J. C6) Same, page 19, bottom 4 lines "(421)" [Corrected as (412) J. 07) Same, page 20, line 2 r C421) j to [(4
11) Correct it as J. Same page, lines 3 to 5, "formed between each channel CHn..." should be deleted. ←9 Same, same page, line 6, "The six pairs of closed magnetic circuits containing and are magnetic" is corrected to "The six pairs of closed magnetic circuits, each containing and, are magnetic." (a) Same, same page, line 7, "Magnetic substrate (c) - magnetism" is corrected to "magnetic substrate (c), magnetism". (21) Same page, line 8 r (412) (422)
- Magnetic layers (411) and (422) j [(412)
and (422)-Magnetic Substrate (23) Corrected as J. □□□ Same, page 21, line 8 [AC203, J is changed to “AQ2
03 or,” is corrected. (23) Same, same page, line 11, ``if you do'' is corrected to ``even if you do''. (24) Same, page 22, lines 3-4, "front type" is corrected to "shield type". (25) Same, page 23, 3-2 lines from the bottom are corrected. (26) Ibid., p. 25, lines 3-7, amended to read therefore. Qγ) Same, page 25, line 13, “Central part (22C) J is corrected to [Central part (22g) J]. (C) In the drawings, Fig. 11 is corrected as shown in the attached drawing.

Claims (1)

[Claims] A bias magnetic field generating means for generating the bias magnetic field is configured to apply a bias magnetic field in the opposite direction to the magnetoresistance effect elements arranged for each -f-jansle, and extract output differentially. A multi-channel magnetoresistive effect type sigma-node in which a bias conductor is arranged in parallel to the pair of magnetoresistive elements and in series between adjacent channels.