JPS5978581A - 水銀カドミウムテルライド結晶の製造方法 - Google Patents

水銀カドミウムテルライド結晶の製造方法

Info

Publication number
JPS5978581A
JPS5978581A JP57190635A JP19063582A JPS5978581A JP S5978581 A JPS5978581 A JP S5978581A JP 57190635 A JP57190635 A JP 57190635A JP 19063582 A JP19063582 A JP 19063582A JP S5978581 A JPS5978581 A JP S5978581A
Authority
JP
Japan
Prior art keywords
crystal
mercury
quartz tube
cadmium
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57190635A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234157B2 (enrdf_load_stackoverflow
Inventor
Koki Nagahama
長浜　弘毅
Ryoji Okata
大方　亮二
Toshio Murotani
室谷　利夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57190635A priority Critical patent/JPS5978581A/ja
Publication of JPS5978581A publication Critical patent/JPS5978581A/ja
Publication of JPS6234157B2 publication Critical patent/JPS6234157B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
JP57190635A 1982-10-27 1982-10-27 水銀カドミウムテルライド結晶の製造方法 Granted JPS5978581A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57190635A JPS5978581A (ja) 1982-10-27 1982-10-27 水銀カドミウムテルライド結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57190635A JPS5978581A (ja) 1982-10-27 1982-10-27 水銀カドミウムテルライド結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS5978581A true JPS5978581A (ja) 1984-05-07
JPS6234157B2 JPS6234157B2 (enrdf_load_stackoverflow) 1987-07-24

Family

ID=16261347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57190635A Granted JPS5978581A (ja) 1982-10-27 1982-10-27 水銀カドミウムテルライド結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS5978581A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688344A1 (fr) * 1992-03-03 1993-09-10 Mitsubishi Electric Corp Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688344A1 (fr) * 1992-03-03 1993-09-10 Mitsubishi Electric Corp Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure.

Also Published As

Publication number Publication date
JPS6234157B2 (enrdf_load_stackoverflow) 1987-07-24

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