JPS5971385A - Method for treating fluorescent substance - Google Patents

Method for treating fluorescent substance

Info

Publication number
JPS5971385A
JPS5971385A JP18115882A JP18115882A JPS5971385A JP S5971385 A JPS5971385 A JP S5971385A JP 18115882 A JP18115882 A JP 18115882A JP 18115882 A JP18115882 A JP 18115882A JP S5971385 A JPS5971385 A JP S5971385A
Authority
JP
Japan
Prior art keywords
phosphor
fluorescent substance
zinc
electron beam
luminance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18115882A
Other languages
Japanese (ja)
Other versions
JPS6141948B2 (en
Inventor
Takao Wada
隆夫 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Itron Corp
Original Assignee
Ise Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ise Electronics Corp filed Critical Ise Electronics Corp
Priority to JP18115882A priority Critical patent/JPS5971385A/en
Publication of JPS5971385A publication Critical patent/JPS5971385A/en
Publication of JPS6141948B2 publication Critical patent/JPS6141948B2/ja
Granted legal-status Critical Current

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  • Luminescent Compositions (AREA)

Abstract

PURPOSE:To improve the luminance of a fluorescent substance, excitable with slow electron rays, and used for fluorescent display tubes, etc., by bringing metallic zinc into contact with a fluorescent substance, and irradiating the fluorescent substance with fast electron rays at such a level as to recoil the zinc atom. CONSTITUTION:For example, a fluorescent substance 2 of ZnO:Zn is placed on a quartz glass plate 1, and a metallic zinc plate 3 having 0.2mm. thickness is further placed thereon. The zinc plate 3 is then irradiated with fast electron rays accelerated in an electron ray accelerator from above at 7 MeV and 5X10<17> electrons/cm<2> intensity.

Description

【発明の詳細な説明】 この発明は、螢光表示管等に用いられる低速電子線励起
螢光体の輝度を向上させる螢光体処理方法に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a phosphor processing method for improving the brightness of a low-speed electron beam-excited phosphor used in a fluorescent display tube or the like.

螢光表示管に用いられる螢光体は、低電圧にて明かるい
輝度が得られるZnO:Zn螢光体が一般的であって、
これは青緑色の発光を呈する。近年、青緑色以外の発光
色を呈するものとして、青色の発光を呈するZnS :
AtrC1% 赤または橙色の発光を呈する(ZnCd
)S:Ag 、C−1%黄色の発光を呈するZ n S
 : A u e A L等の螢光体が提案されている
The phosphor used in fluorescent display tubes is generally ZnO:Zn phosphor, which can provide bright brightness at low voltage.
This exhibits blue-green luminescence. In recent years, ZnS that emits blue light has been used as a material that emits light in a color other than blue-green:
AtrC1% Emit red or orange light (ZnCd
)S:Ag,C-1%ZnS exhibiting yellow luminescence
: Fluorescent materials such as AueAL have been proposed.

しかし、これらの螢光体は青緑色のものに比べて明かる
さに難点があり、明かるい発光輝度が得られるものが望
まれている。また、従来用いられている青緑色を呈する
螢光体であっても、より明かるい発光が得られれば陽極
電圧を低下させることができるので、小形化または省エ
ネルギー上も好ましい。
However, these phosphors have a disadvantage in brightness compared to blue-green phosphors, and a phosphor that can provide bright luminance is desired. Furthermore, even with conventionally used phosphors exhibiting blue-green color, if brighter light emission can be obtained, the anode voltage can be lowered, which is also preferable from the standpoint of miniaturization and energy saving.

したがってこの発明の目的は、発光輝度を向上させるこ
とができる新規な螢光体処理方法を提供することにある
Therefore, an object of the present invention is to provide a novel phosphor treatment method that can improve luminance.

このような目的を達成するためにこの発明は、螢光体に
その螢光体粉末の粒子よシ十分大きな寸法を有する金属
亜鉛を混在させ、これに高速電子線を照射したものであ
る。以下、実施例を示す図面を用いてこの発明の詳細な
説明する。
In order to achieve this object, the present invention mixes metallic zinc having a size sufficiently larger than the particles of the phosphor powder in the phosphor, and irradiates the phosphor with a high-speed electron beam. Hereinafter, the present invention will be described in detail using drawings showing embodiments.

第1図はこの発明に係る螢光体処理方法を適用して螢光
体を処理している状態を示す図である。
FIG. 1 is a diagram showing a state in which a phosphor is being processed by applying the phosphor processing method according to the present invention.

同図において、1は石英ガラス板であり、その上に処理
を行うZnO:Znの螢光体2が載せられており、その
螢光体2の上に0.2朋厚の金属亜鉛板3が載せられて
いる。このように配置されたものに、上方、即ち亜鉛板
3側から電子線加速器で加速された矢印で示す高速電子
線を照射する。実施例では7MeVで5 X 10” 
electron/c!lの照射を行なっている。
In the figure, 1 is a quartz glass plate, on which is placed a ZnO:Zn phosphor 2 to be processed, and on top of the phosphor 2 is a metal zinc plate 3 with a thickness of 0.2 mm. is listed. A high-speed electron beam accelerated by an electron beam accelerator and shown by an arrow is irradiated onto the thus arranged object from above, that is, from the side of the zinc plate 3. In the example, 5 x 10" at 7 MeV
electron/c! 1 irradiation is being carried out.

このようにして処理された螢光体2を用いて形成された
螢光面を有する陽極と、処理の行なわれていない螢光体
を用いて形成された螢光面を有する陽極とをそれぞれ使
用し、複数の陽極を有する螢光表示管を形成して輝度測
定を行なった。この結果、高速電子線の照射処理を行な
った螢光体を用いている陽極の輝度は、処理を行なわな
かった螢光体を用いている陽極の輝度に対して120〜
13Mの値が得られた。
An anode having a fluorescent surface formed using the phosphor 2 treated in this way and an anode having a fluorescent surface formed using the untreated phosphor are used, respectively. Then, a fluorescent display tube with multiple anodes was formed and the luminance was measured. As a result, the brightness of an anode using a phosphor that has been treated with high-speed electron beam irradiation is 120 to
A value of 13M was obtained.

この効果は次の原因によって生じたものと思われる。こ
の螢光体の発光は電子がZnの格子間原子からZnの空
格子点に遼移するために発生すると考えられている。し
たがって、znの格子間原子が多い程その遷移が増加し
、発光輝度が強いことになる。
This effect is thought to be caused by the following reasons. It is believed that the light emission of this phosphor is caused by the transfer of electrons from Zn interstitial atoms to Zn vacancies. Therefore, the more interstitials there are in zn, the more the transition will occur, and the luminance will be stronger.

第1図のように亜鉛板3の上から電子線照射を行うと、
電子線は亜鉛原子を反跳させると同時に高密度の電子−
正孔プラズマを形成する。そして、この電子−正孔プラ
ズマの再結合が起る時、再結合エネルギを反跳された亜
鉛原子に与える。このため亜鉛板3中ではZnの格子間
原子の移動が活発になシ、このZnの格子間原子が螢光
体中に拡散される。したがって螢光体中におけるZHの
格子間原子が増加し、上述の発光輝度が増加したものと
思われる。
When electron beam irradiation is performed from above the zinc plate 3 as shown in Fig. 1,
The electron beam recoils the zinc atoms and at the same time causes a high density of electrons to
Forms hole plasma. When this electron-hole plasma recombination occurs, recombination energy is imparted to the recoil zinc atoms. Therefore, Zn interstitial atoms move actively in the zinc plate 3, and these Zn interstitial atoms are diffused into the phosphor. Therefore, it is thought that the number of ZH interstitial atoms in the phosphor increased, and the above-mentioned luminance increased.

第2図はこの発明の他の実施例を示す断面図であシ、第
1図と同一部分および相当部分は同記号ヲ用いている。
FIG. 2 is a sectional view showing another embodiment of the present invention, and the same symbols are used for the same parts and corresponding parts as in FIG. 1.

この例では石英ガラスのカプセル4の中に螢光体2を入
れておき、その螢光体2の内部に亜鉛板3を入れて、上
方から矢印で示す高速電子線の照射を行なったものであ
る。この場合、螢光体2は亜鉛板3の上側および下側を
問わず発光輝度が増加し、輝度増加月は螢光体2のどの
場所でも均一であった。
In this example, a phosphor 2 is placed inside a quartz glass capsule 4, a zinc plate 3 is placed inside the phosphor 2, and a high-speed electron beam shown by the arrow is irradiated from above. be. In this case, the luminance of the phosphor 2 increased both above and below the zinc plate 3, and the increase in luminance was uniform everywhere on the phosphor 2.

なお、以上の実施例では7 M e Vで5 X 10
’“′electrons/iの電子線照射を行なった
場合を示したが、l〜IOM@Vの電子線照射であれは
同動結果が得られた。また、螢光体もZnO:Znのほ
かに、ZnS:Af+C1z  (ZnCd)S:At
、Ct。
In addition, in the above example, 5×10 at 7 M e V
'"'The case of electron beam irradiation with electrons/i was shown, but the same result was obtained with electron beam irradiation of l~IOM@V.Furthermore, the phosphor was also ZnO:Zn and other , ZnS:Af+C1z (ZnCd)S:At
, Ct.

zn S : A u * AZ等Zn化合物螢光体で
あれば関度の覗象が確認された。また、亜鉛板3は板に
限定されることなく螢光体の粒子より十分大きい金属亜
鉛を十分な量だけ螢光体2の中に混在させた混合体に高
速電子線を照射しても同様の結果が得られた。々お、金
属亜鉛と螢光体粉末との混在率は1:1以上が望ましい
In the case of Zn compound phosphors such as zn S : A u *AZ, the appearance of a relationship was confirmed. The zinc plate 3 is not limited to a plate, and the same effect can be obtained by irradiating a high-speed electron beam onto a mixture in which a sufficient amount of metallic zinc, which is sufficiently larger than the particles of the phosphor, is mixed in the phosphor 2. The results were obtained. Preferably, the mixing ratio of metallic zinc and phosphor powder is 1:1 or more.

以上説明したようにこの発明に係る螢光体処理方法は、
螢光体と金属亜鉛を混在させたものに高速電子線を照射
したので、電子線照射前に比べて螢光体の発光輝度を向
止させることができるという優れた効果を有する。
As explained above, the phosphor treatment method according to the present invention includes:
Since a mixture of phosphor and metallic zinc was irradiated with a high-speed electron beam, it had the excellent effect of being able to control the luminance of the phosphor compared to before irradiation with the electron beam.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明に保る螢光体処理方法の一実施例を用
いて螢光体を処理している状態を足す図、第2図は他の
実施例を用いて螢光体を処理している状部を示す断面図
である。 1,4・−・・石英ガラス、2・・・Φ螢光体、3−・
Φ・亜鉛板。 特許出願人 伊勢電子工業株式会社 代理人山川政樹Ctか1名)
Fig. 1 is a diagram showing a state in which a phosphor is processed using one embodiment of the phosphor processing method according to the present invention, and Fig. 2 is a diagram showing a state in which a phosphor is processed using another embodiment. FIG. 1, 4... quartz glass, 2... Φ phosphor, 3-...
Φ・Zinc plate. Patent applicant: Ise Electronics Co., Ltd. agent Masaki Yamakawa Ct or one person)

Claims (1)

【特許請求の範囲】[Claims] 螢光体に金属亜鉛を接触させ、これに金属亜鉛の亜鉛原
子を反跳させるレベルの高速電子線を照射することを特
徴とする螢光体処理方法。
A method for treating a phosphor, which comprises bringing metal zinc into contact with the phosphor and irradiating the phosphor with a high-speed electron beam at a level that causes the zinc atoms of the metal zinc to recoil.
JP18115882A 1982-10-15 1982-10-15 Method for treating fluorescent substance Granted JPS5971385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18115882A JPS5971385A (en) 1982-10-15 1982-10-15 Method for treating fluorescent substance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18115882A JPS5971385A (en) 1982-10-15 1982-10-15 Method for treating fluorescent substance

Publications (2)

Publication Number Publication Date
JPS5971385A true JPS5971385A (en) 1984-04-23
JPS6141948B2 JPS6141948B2 (en) 1986-09-18

Family

ID=16095898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18115882A Granted JPS5971385A (en) 1982-10-15 1982-10-15 Method for treating fluorescent substance

Country Status (1)

Country Link
JP (1) JPS5971385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128063A (en) * 1990-11-09 1992-07-07 Nec Corporation Zno:zn phosphor for vacuum fluorescent display

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128063A (en) * 1990-11-09 1992-07-07 Nec Corporation Zno:zn phosphor for vacuum fluorescent display

Also Published As

Publication number Publication date
JPS6141948B2 (en) 1986-09-18

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