JPS5971188A - Magnetic bubble domain detecting device - Google Patents
Magnetic bubble domain detecting deviceInfo
- Publication number
- JPS5971188A JPS5971188A JP57179714A JP17971482A JPS5971188A JP S5971188 A JPS5971188 A JP S5971188A JP 57179714 A JP57179714 A JP 57179714A JP 17971482 A JP17971482 A JP 17971482A JP S5971188 A JPS5971188 A JP S5971188A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic bubble
- magnetic
- film thickness
- detection element
- domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は磁気バブルドメイン検出装置、特に動作安定性
、信頼性が高くかつ高出力が得られる磁気バブルドメイ
ン検出装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble domain detection device, and particularly to a magnetic bubble domain detection device that has high operational stability, reliability, and high output.
第1図は磁気バブルドメイン検出装置の一例を示す要部
平面構成図である。同図において、1は磁気バブル転送
路、2は磁気バブルドメイン検出素子、3は磁気バブル
、4は磁気バブルドメイン検出素子2の磁化Mの方位、
5は磁気バブル拡大器、6は消去器、7 a r 7
bは検出器電流Idの印加用端子兼用の出力端子、8は
拡大器5を構成する基本パターンであり、上記磁気バブ
ルドメイン検出素子2と磁気バブル転送路1と磁気バブ
ル拡大器5はパーマロイ等の軟磁性材料で形成されてい
る。ここで、磁気バブルドメイン検出装置は、磁気バブ
ル転送路1と磁気パズルドメイン検出素子2と磁気バブ
ル拡大器と検出器電流印加用端子兼用の出力端子7a、
7bで構成されている。FIG. 1 is a plan view showing the main parts of an example of a magnetic bubble domain detection device. In the figure, 1 is a magnetic bubble transfer path, 2 is a magnetic bubble domain detection element, 3 is a magnetic bubble, 4 is the direction of magnetization M of the magnetic bubble domain detection element 2,
5 is a magnetic bubble expander, 6 is an eraser, 7 a r 7
b is an output terminal that also serves as a terminal for applying the detector current Id; 8 is a basic pattern constituting the expander 5; the magnetic bubble domain detection element 2, the magnetic bubble transfer path 1, and the magnetic bubble expander 5 are made of permalloy or the like; It is made of soft magnetic material. Here, the magnetic bubble domain detection device includes a magnetic bubble transfer path 1, a magnetic puzzle domain detection element 2, a magnetic bubble expander, and an output terminal 7a which also serves as a detector current application terminal.
7b.
このような構成において、磁気バブル3は、回転磁界H
rが1回転する毎に転送路1および基本パターン8を1
ステツプずつ磁気バブルドメイン検出素子2の方向、つ
まり矢印P方向へ転送される。そして、拡大器5の中で
は磁気バブル3は層状に重ね合った基本バタンにより磁
気バブルの進行方向(矢印P方向)と直角方向に細長い
ひも状に拡大される。ここで、ひも状に引き延ばされた
磁気バブル3が磁気バブルドメイン検出素子2の下に到
達すると、該磁気バブルドメイン検出素子2の磁化Mの
方位4が磁気バブル3からの浮遊磁界の影響を受けて回
転する。これに伴ない磁気ノXプルドメイン検出素子2
の抵抗値が変化する。この抵抗変化を予め端子7a、7
b間に印加した検出器電流Idにより電圧変化に変換し
、当該電圧変化を端子7a、7bから取り出す。したが
って、出力電圧はひも状に引き延ばされた磁気バブル3
の長さが長いほど大きくなる。このように磁気バブルド
メイン検出装置に拡大器5を設置することは極めて有効
な手段であり、このような拡大器の基本パタン8には第
2図(a)〜(f)に代表例を示すように各種の形状が
知られている。In such a configuration, the magnetic bubble 3 is exposed to the rotating magnetic field H
Transfer path 1 and basic pattern 8 are changed by 1 every time r rotates once.
The information is transferred step by step in the direction of the magnetic bubble domain detection element 2, that is, in the direction of arrow P. In the expander 5, the magnetic bubble 3 is expanded into a long and thin string in a direction perpendicular to the traveling direction of the magnetic bubble (direction of arrow P) by the basic batons superimposed in layers. Here, when the magnetic bubble 3 stretched like a string reaches below the magnetic bubble domain detection element 2, the direction 4 of the magnetization M of the magnetic bubble domain detection element 2 is influenced by the stray magnetic field from the magnetic bubble 3. It rotates in response to the Along with this, the magnetic X-pull domain detection element 2
resistance value changes. This resistance change can be measured in advance at terminals 7a and 7.
It is converted into a voltage change by the detector current Id applied between the terminals 7a and 7b, and the voltage change is taken out from the terminals 7a and 7b. Therefore, the output voltage is the magnetic bubble 3 stretched like a string.
The longer the length, the larger it becomes. Installing the magnifying device 5 in the magnetic bubble domain detection device in this way is an extremely effective means, and typical examples of the basic pattern 8 of such a magnifying device are shown in FIGS. 2(a) to (f). Various shapes are known.
従来、磁気バブルドメイン装置には、第:alm(a)
(b)に示すように大別して2種類の装置が知られてい
た。すなわち、9は薄膜形検出素子である。この種の薄
膜形検出素子9の膜厚は反磁界を小さくするだめに概略
200A〜400Aの範囲に選定され、膜厚が薄いこと
から薄膜形検出装置と称されている。一方、第3図(b
)に示す10は拡大器を兼ねた検出素子である。この種
の検出素子10では、製造工程の簡略化のため、検出素
子と転送路どが一体構造となっており、両者共1%13
17.’4は等しく、概略4000A〜6000A の
範囲に選定されるので厚膜形検出装置と称されている。Conventionally, magnetic bubble domain devices include the following:alm(a)
As shown in (b), two types of devices were known. That is, 9 is a thin film type detection element. The film thickness of this type of thin film detection element 9 is selected to be approximately in the range of 200A to 400A in order to reduce the demagnetizing field, and because of its thin film thickness, it is called a thin film detection device. On the other hand, Fig. 3 (b
10 shown in ) is a detection element that also serves as a magnifier. In this type of detection element 10, in order to simplify the manufacturing process, the detection element and the transfer path are integrated, and both have a 1% 13
17. '4 is the same and is selected within the range of approximately 4000A to 6000A, so it is called a thick film type detection device.
この種の磁気バブルドメイン検出装置では、検出素子製
造時に同時に転送路や拡大器も製作できる利点がある反
面、検出素子の膜厚が厚いため、薄膜形検出装置に比べ
て反磁界が大きく、電気折抗が小さい。このため、性能
は薄膜形検出装置に比べて劣る。また、この種の検出装
置では磁気バブルドメインの拡大倍率1を200倍〜4
00倍に拡大して出力を増幅している。そして、厚膜形
検出装置は主に磁気バブルの直径2μm〜5μmの磁気
バブル記憶装置に使用され、現状技術の主流となってい
る。This type of magnetic bubble domain detection device has the advantage that the transfer path and expander can be fabricated at the same time as the detection element is manufactured, but on the other hand, the film thickness of the detection element is thick, so the demagnetizing field is larger than that of a thin film type detection device, and the electrical The fold is small. Therefore, the performance is inferior to that of a thin film type detection device. In addition, in this type of detection device, the magnification magnification 1 of the magnetic bubble domain is 200 times to 4 times.
The output is amplified by 00 times magnification. The thick film type detection device is mainly used in magnetic bubble storage devices with magnetic bubbles having a diameter of 2 μm to 5 μm, and is the mainstream of current technology.
近年、磁気バブル記憶装置σの高速度、高密度化の要請
に対して磁気バブル径10μm〜1.5μm。In recent years, in response to the demand for higher speed and higher density of magnetic bubble storage devices σ, magnetic bubble diameters of 10 μm to 1.5 μm have been developed.
容量4Mb〜16Mbの磁気バブル記憶装置を目標とし
た場合、厚膜形検出装置と薄膜形検出装置とでは以下に
説明するような重大な欠陥があった。下記第1表は磁気
バブル径が1.0μm〜1.5μmの磁気バブルドメイ
ン検出装置の特性の代表例を示し3−
たものである。When a magnetic bubble storage device with a capacity of 4 Mb to 16 Mb is targeted, the thick film type detection device and the thin film type detection device have serious defects as explained below. Table 1 below shows representative examples of the characteristics of magnetic bubble domain detection devices with magnetic bubble diameters of 1.0 μm to 1.5 μm.
第 1 表
なお、上記第1表に示す検出効率(V/A )は、検出
器電流=1〜3mA
の関係式から求めたものである。Table 1 Note that the detection efficiency (V/A) shown in Table 1 above was determined from the relational expression of detector current = 1 to 3 mA.
同表において、薄膜形検出装置の検出効率は大きいが、
素子を流れる電流密度が106AAyn2をはるかに超
える。そして、この電流密度が106)Jcrn”以上
となると、エレクトロマイグレーションが原因する素子
劣化が発生し、信頼性設計上望ましく4−
々い。さらに過大電流の印加による素子の導体パタンの
断線も大きな問題であった。In the same table, the detection efficiency of the thin film detection device is high, but
The current density flowing through the device is much greater than 106 AAyn2. If this current density exceeds 106) Jcrn, element deterioration will occur due to electromigration, which is undesirable in terms of reliability design.Furthermore, disconnection of the element's conductor pattern due to the application of excessive current is a major problem. Met.
とのように当該薄膜形検出装置では信頼性の欠如が大き
な問題となっていた。一方、厚膜形検出装置では、電流
密度が105A/、n2 のオーダであり、薄膜形検
出装fMに比べて信頼性は高いが、検出効率が低い。ま
た、この種の検出装置は、転送路が検出素子を兼ねてい
るため、素子の設計余裕度が極めて狭くなるという欠点
があった。さらに当該検出装置では検出素子自体が第3
図伽)に示すように複雑な幾何学的形状を有しているた
め、直径1.5μm以下の磁気バブル用のバタンルール
、スなわち概略0.5μm〜1.0μmのバタンルール
ではバタン形成が極めて困難と外る。したがって当該薄
膜形検出装置を直径1.5丸以下の磁気バブルに適用す
ることは困難であった。The lack of reliability was a major problem with the thin film detection device. On the other hand, in the thick film type detector, the current density is on the order of 105 A/, n2, and although the reliability is higher than that of the thin film type detector fM, the detection efficiency is lower. Further, in this type of detection device, since the transfer path also serves as the detection element, there is a drawback that the margin for designing the element is extremely narrow. Furthermore, in this detection device, the detection element itself
As shown in Figure 3), since it has a complex geometrical shape, a batan rule for magnetic bubbles with a diameter of 1.5 μm or less, that is, a batan rule of approximately 0.5 μm to 1.0 μm, does not form a batten. is considered extremely difficult. Therefore, it has been difficult to apply the thin film type detection device to magnetic bubbles with a diameter of 1.5 circles or less.
したがって本発明は、軟磁性材料で形成される磁気バブ
ルドメイン検出素子の膜厚を概略1000に〜2ooo
Xの範囲で形成することによって、設計余裕度が広く、
動作安定性がすぐれ、信頼性が高く、かつ出力の大きい
磁気バブルドメイン検出装置を提供することを目的とし
ている。Therefore, in the present invention, the film thickness of the magnetic bubble domain detection element formed of a soft magnetic material is approximately 1000 to 200 mm.
By forming within the range of X, the design margin is wide,
It is an object of the present invention to provide a magnetic bubble domain detection device with excellent operational stability, high reliability, and large output.
以下図面を用いて本発明の実施例を詳細に説、明する。Embodiments of the present invention will be described and explained in detail below using the drawings.
第4図(:q) 、 (h)は発明者等の実験により明
らかにされた第3図(a)に示す薄1漠形検出装置に概
略径1,5μmの磁気バブルを使用した場合の検出素子
9の膜厚と各種特性との関係を示す図であり、第4図(
a)は検出素子の膜厚と効率との関係および検出素子の
膜厚と電流密度との関係を示し、第4図(b)は検出素
子の膜厚と検出素子の下を磁気バブルが円滑に転送でき
る領域との関係をそれぞれ示しだものである。すなわち
、第4図(a)において、当該検出素子の膜厚を厚くす
ることにより、特性■で示すように電流密度が小さくな
ると同時に効率も低下するので出力も減少する。々お、
ここで同図(a)に示す特性]は理論上の特性である。Figures 4(:q) and (h) show the results of experiments conducted by the inventors when a magnetic bubble with an approximate diameter of 1.5 μm is used in the thin, vague-shaped detection device shown in Figure 3(a). FIG. 4 is a diagram showing the relationship between the film thickness and various characteristics of the detection element 9;
Figure 4 (a) shows the relationship between the film thickness of the detection element and efficiency and the relationship between the film thickness of the detection element and current density, and Figure 4 (b) shows the relationship between the film thickness of the detection element and the relationship between the magnetic bubble passing under the detection element. This shows the relationship between each area and the area that can be transferred to. That is, in FIG. 4(a), by increasing the film thickness of the detection element, the current density decreases and the efficiency also decreases, as shown by characteristic (2), and the output also decreases. Oh,
Here, the characteristics shown in FIG. 3(a) are theoretical characteristics.
例えば、検出素子の膜厚を概略1000A以上にすると
、電流密度が106A/crn2以下となった。壕だ、
検出素子の膜厚を概略2oooX以上にすると、当該検
出素子の下を通過する磁気バブルが当該素子を形成する
軟磁性薄膜の磁極にトラップされた。また、転送が不能
となった。すなわち、同図(b)で示すように検出素子
の膜厚が概略2000A〜3000A以下となる領域A
では当該検出素子の下を磁気バブルが円滑に転送できる
が、膜厚が概略2000A〜aoooi以上となる領域
Bでは磁気バブルが円滑に転送できないということが明
らかとなった。以上の説明から検出素子の軟磁性膜厚を
概略1000′に〜2oooiの範囲とし、転送路の軟
磁性膜厚を概略5000X以上とすることによって、出
力電圧が高く、かつ信頼性が十分に高い磁気バブルドメ
イン検出装置を可能にしたものである。For example, when the film thickness of the detection element was approximately 1000 A or more, the current density became 106 A/crn2 or less. It's a trench.
When the film thickness of the detection element was approximately 2 oooX or more, magnetic bubbles passing under the detection element were trapped by the magnetic poles of the soft magnetic thin film forming the element. Also, transfer became impossible. In other words, as shown in FIG. 6(b), a region A where the film thickness of the detection element is approximately 2000A to 3000A or less.
It has become clear that, although magnetic bubbles can be transferred smoothly under the detection element, magnetic bubbles cannot be transferred smoothly in region B where the film thickness is approximately 2000A~aoooi or more. From the above explanation, by setting the soft magnetic film thickness of the detection element in the range of approximately 1000' to 2000' and making the soft magnetic film thickness of the transfer path approximately 5000x or more, the output voltage is high and the reliability is sufficiently high. This makes the magnetic bubble domain detection device possible.
第5図(a)〜(f)は本発明による磁気バブルドメイ
ン検出装置の実施例を示す要部平面構成図であり、前述
の図と同記号は同一要素となるのでその説明は省略する
。同図において、11は本発明による検出素子であり、
この検出素子11は膜厚が概略7−
1500Aである。この場合、使用する磁気バブルの直
径は概略1,5μmである。FIGS. 5(a) to 5(f) are plan configuration diagrams of essential parts showing an embodiment of the magnetic bubble domain detecting device according to the present invention, and since the same symbols as those in the above-mentioned figures represent the same elements, the explanation thereof will be omitted. In the figure, 11 is a detection element according to the present invention,
The film thickness of this detection element 11 is approximately 7-1500A. In this case, the diameter of the magnetic bubble used is approximately 1.5 μm.
以上説明したように本発明による磁気バブルドメイン検
出装置によれば、検出素子の膜厚を概略xoooX〜2
00ONの範囲に選定することにより、動作安定性が優
れ、信頼性が高く、設計余裕度が広く、シかも出力が大
きい磁気バブルドメイン検出装置が実現できるという極
めて優れた効果が得られた。As explained above, according to the magnetic bubble domain detection device according to the present invention, the film thickness of the detection element is approximately xooooX~2
By selecting the range of 00ON, extremely excellent effects were obtained in that a magnetic bubble domain detection device with excellent operational stability, high reliability, wide design latitude, and large output could be realized.
第1図は磁気バブルドメイン検出装置の一例を示す要部
平面構成図、第2図(a)〜(f)は各種基本バタンを
示す平面図、第3図(a) 、 (b)は薄膜形検出装
置、厚膜形検出装置の一例を示す平面構成図、第4図(
a)は概略径1.5μmの磁気バブルを使用した場合の
検出素子の膜厚と効率の関係および検出素子膜厚と電流
畜産の関係を示す図、第4図(b)は概略径1.5μm
の磁気バブルを使用した場合の検出素子の膜厚と磁気バ
ブルの転送領域の関係を示す図、第5図(a)〜(f)
は本発明による磁気バブルドメイン8−
検出装置の実施例を示す平面図である。
1・・壷・磁気バブル転送路、2魯・・・磁気バブルド
メイン検出素子、3−・・・磁気バブル、4・・・・磁
気バブルドメイン検出素子2の磁化の方位、5・・・・
磁気バブル拡大器、6・・・・消去器、7 a + 7
b・・・・検出器電流印加用端子兼用の出力端子、8
・・・・基本バタン、9・・幸・薄膜形検出素子、10
・・・・厚膜形検出素子、11・・・・本発明による検
出素子。
検1jつ咲厚 (入)
(b)
嫂斂−t″3#It!厚 (入)
第5図Fig. 1 is a plan view of the essential parts of an example of a magnetic bubble domain detection device, Figs. 2 (a) to (f) are plan views showing various basic buttons, and Figs. 3 (a) and (b) are thin film Figure 4 is a plan configuration diagram showing an example of a shape detection device and a thick film shape detection device.
a) is a diagram showing the relationship between the film thickness of the detection element and efficiency and the relationship between the film thickness of the detection element and current husbandry when a magnetic bubble with an approximate diameter of 1.5 μm is used, and FIG. 5 μm
Figures 5(a) to 5(f) are diagrams showing the relationship between the film thickness of the detection element and the transfer area of the magnetic bubble when using a magnetic bubble of
1 is a plan view showing an embodiment of a magnetic bubble domain 8-detecting device according to the present invention. 1. Pot/magnetic bubble transfer path, 2. Magnetic bubble domain detection element, 3. Magnetic bubble, 4. Direction of magnetization of magnetic bubble domain detection element 2, 5.
Magnetic bubble expander, 6... eraser, 7 a + 7
b... Output terminal that also serves as detector current application terminal, 8
...Basic button, 9...Sachi Thin film detection element, 10
. . . Thick film type detection element, 11 . . . Detection element according to the present invention. Detection 1j Tsusaki Atsushi (In) (b) 嫂斂-t''3#It! Thick (In) Figure 5
Claims (1)
ドメインの有無を検知する軟磁性薄膜から力る磁気バブ
ルドメイン検出素子を少なくとも具備してなる磁気バブ
ルドメイン検出装置において、前記磁気バブルドメイン
検出素子を形成する軟磁性薄膜の膜厚を概略1000A
〜2000 Aの範囲で形成したことを特徴とする磁気
バブルドメイン検出装置。In a magnetic bubble domain detection device comprising at least a magnetic bubble domain detection element that detects the presence or absence of magnetic bubble domains generated in a magnetic thin film having uniaxial magnetic anisotropy, the magnetic bubble domain detection element receives force from a soft magnetic thin film. The thickness of the soft magnetic thin film forming the
A magnetic bubble domain detection device characterized in that the magnetic bubble domain is formed in the range of ~2000 A.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57179714A JPS5971188A (en) | 1982-10-15 | 1982-10-15 | Magnetic bubble domain detecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57179714A JPS5971188A (en) | 1982-10-15 | 1982-10-15 | Magnetic bubble domain detecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5971188A true JPS5971188A (en) | 1984-04-21 |
Family
ID=16070582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57179714A Pending JPS5971188A (en) | 1982-10-15 | 1982-10-15 | Magnetic bubble domain detecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5971188A (en) |
-
1982
- 1982-10-15 JP JP57179714A patent/JPS5971188A/en active Pending
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