CN105845823A - Magnetic device and preparation method - Google Patents
Magnetic device and preparation method Download PDFInfo
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- CN105845823A CN105845823A CN201610199587.2A CN201610199587A CN105845823A CN 105845823 A CN105845823 A CN 105845823A CN 201610199587 A CN201610199587 A CN 201610199587A CN 105845823 A CN105845823 A CN 105845823A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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Abstract
The invention discloses a magnetic device and a preparation method and possible purposes of the magnetic device. The magnetic device comprises a substrate of an insulating material, and a unit composed of soft magnetic materials and attached to the substrate; the unit is composed of two similar or connected equilateral rectangular rings prepared by a soft magnetic material film having the thickness of 20-80 nm, wherein the length of a rectangle is 100 nm-1 [mu]m, the ratio between the length of a rectangle and ring thickness is 10:1-2:1, the distance between two rings is 50 nm, the joint between the two rings shares a same ring edge, and sharp corners of the two rectangular rings in the unit are all rounding. Compared with a magnetic random access memory, the magnetic device can write in information without a large writing field, and provide more stable magnetic domain states for new compiled codes. According to corresponding research, the device possesses more magnetic domain states, and therefore can provide storage information in more states; in addition, the device possesses a low switching field and the stability of more vortex states, and can be used for a magnetic reader-writer, and providing more switch selections for nanometer switching devices.
Description
Technical field
The present invention relates to a kind of magnetic device and the preparation method of this device and purposes.
Background technology
Owing to there is the stable vortex state magnetic domain being rotated both clockwise and counterclockwise in magnetic Nano ring, its excellent performance is wide
General for manufacturing and designing magnetic storage medium or magnetic recording device and magnetic switch device.Such as Chinese patent
Disclosed in CN2008102223121 a kind of utilize ferromagnetic nanometer ring strong magnetic resistance effect can as memory element magnetic field pass
Sensor, and for example United States Patent (USP) US7, ring-type memory element disclosed in 002,839B2.
For the read-write equipment of magnetic random memory or magnetic memory, it is desirable to there is low upset field.It turns over
Transition and the structure of magnetic Nano ring device, interannular magnetic interaction, material, ring size, ring width and thickness etc. have the biggest
Relation.For material, soft magnetic materials can obtain relatively low upset field, such as NiFe alloy, Co etc..For ring size
Speech, ring radius is the least, and the upset field of vortex state to Bulbus Allii Cepae state is the biggest, and ring width is the biggest, the upset field of vortex state to Bulbus Allii Cepae state
The least.Excessive ring radius makes memory density reduce.Excessive ring width, can cause again its vortex state unstable.Thickness is more
Little, signal to noise ratio can reduce and the degree of stability of vortex state also can decline.It is reported for single Co nanometer that thickness is 12 nanometers
Ring, its ring radius is 520 nanometers, and ring width is 175 nanometers, and the upset field of its vortex state to Bulbus Allii Cepae state is 410 oersteds, and along with
Ring width is reduced to 110 nanometers, and its upset field is 850 oersteds.And the single NiFe alloy nano-rings that thickness is 50 nanometers, its ring
Radius is 1200 nanometers, and ring width is 300 nanometers, and the upset field of its vortex state to Bulbus Allii Cepae state is 530 oersteds.So selecting properly
Ring radius, ring width and thickness, be necessary for magnetic random memory, but the research of this respect be the most very
Many.Along with the increase of packing density, magnetic interaction becomes most important to the impact of stable vortex state, but this respect
Research is the most few.
On the other hand, existing magnetic memory element and read-write equipment all only have two states, it is clear that if able to a kind of
State will make application be extended.
In single magnetic Nano ring structure, the vortex state domain structure being rotated both clockwise and counterclockwise due to existence, magnetic
Storage unit can be respectively defined as " 0 " and " 1 " by the difference of vortex state direction of rotation. if magnetic Nano ring has more
Stable domain state, on the basis of definition is binary, can obtain more code, and coding information can be more flexible.And
And this is for magnetic switch device, the switching information compiling bigger by motility can be obtained.
Summary of the invention
The present invention provides a kind of relatively prior art to have the magnetic device of lower upset field, provides the system of this device simultaneously
Preparation Method and purposes.
This magnetic device of the present invention, including the substrate of insulant and being made up of soft magnetic materials of being attached on substrate
Unit, described unit is to be two close or connected equilateral rectangles that 20～80nm soft magnetic material thin films are constituted by thickness
Ring is constituted, wherein: a length of 100nm of rectangular edges～1 μm, and the rectangle length of side: ring thickness is equal to 10:1～2:1, the spacing etc. of two interannulars
A ring limit, and the equal rounding of wedge angle of two straight-flanked rings in described unit is shared in 50 nm～two ring connecting places.In the present invention
Described soft magnetic materials refers to the magnetic material with low-coercivity and high magnetic permeability, such as: CoFe, CoFeB, Fe, Ni, also
Available multi-layer film structure, such as CoFe/NiFe etc..
Preferably, the straight-flanked ring width of the magnetic device of the present invention is 800nm, and ring thickness is 200nm, the spacing of two interannulars
Being zero, and the side of two ring connections is a straight line, four rounding of angle angular radius of two rings are 200 nm, are thusly-formed this
The device of bright a kind of form.
The straight-flanked ring width that the another kind of device form of the present invention is described is 800nm, and ring thickness is 200nm, two interannulars
Spacing be zero, and the side of two ring connections is all with the fillet of rounding, and eight rounding of angle angular radius of two rings are 200
nm。
The preparation method of the magnetic device of the present invention is: form required two by mask manufacture technology on backing material
Equilateral rectangle masterplate, for example with methods such as photoetching or electron beam exposure ion etchings, then carries out soft magnetic materials on masterplate
The thin film of the soft magnetic materials of two equilateral rectangles of formation of deposits, described soft magnetic materials deposition can use electron beam evaporation plating, or
Magnetron sputtering technique or molecular beam epitaxial growth technology.
The concrete preparation method of a kind of magnetic device of the present invention is: described backing material is silicon chip, is positioned over by silicon chip
On sol evenning machine, drip spin coating after full silicon chip with PMMA glue, obtain uniform glue-line, then the Si sheet scribbling glue-line is carried out after bake, electricity consumption
Son bundle exposure machine is exposed and develops and fixing, obtains the twin nuclei of required form, then by the method for electron beam evaporation plating double
Ring structure carries out the evaporation of soft magnetic materials, then removes photoresist, obtain the unit of the dicyclo soft magnetic film of required form.
The device that preferably the magnetic device preparation method of the present invention is prepared, the material being deposited with is Ni80Fe20Soft
Magnetic material, the thickness of thin film is 50 nm.
The magnetic device of the present invention can application in magnetic read-write device, it is possible in magnetic Nano switching device or magnetic
Application in sensor.
Device of the present invention is for magnetic random memory, it is not necessary to just can write information with the biggest write field, and carry
Supply more to stablize the compiled code that domain state becomes new.Corresponding research shows, one of device of the present invention can have more
Multiple magnetic domain form, therefore can provide more multi-mode storage information, and when the device of the present invention is as received for magnetic
Can have during rice switching device and more switch selection.The present invention is based on selecting certain thickness, ring radius and the magnetic of ring width
Nano-rings structure, discloses the impact of the magnetic interaction vortex state degree of stability on magnetic Nano ring device and upset field, for sending out
Exhibition magnetic Nano device provides experiment and theory and practice to provide foundation.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph of four kinds of different types of devices of the present invention, wherein: A is that two ring junctions are stacked
Adding the device of type (that is: two ring connecting places share a ring limit), its side connected is a straight line；B is two ring junction direct type
Device, its side connected is all with the fillet of rounding；C is that two rings connect plesiotype device；D is two ring types apart from each other
" device ".
Fig. 2 is micro-magnetic simulation drawing of four kinds of devices of the present invention.
Fig. 3 is that A device magnetic domain is with changes of magnetic field graph of a relation.
Fig. 4 is respectively micro-magnetic simulation drawing of A, B device of the present invention, wherein: ■ curve is A type device, and curve is Type B
Device.
Fig. 5 is upset field and the magnetic direction variation relation figure of the A device of the present invention, in figure: the song of hexagon point labelling
Line is Hn；The curve of positive triangle point-shaped labelling is Ha n1Curve；The curve of round dot labelling is Han2。
Fig. 6 and Fig. 7 is the device schematic diagram for read-write equipment of the present invention.Wherein in Fig. 6 and Fig. 7: 1 is bit line, and 2 are
Sense line, 3 is access transistor, and 4 is wordline, and 5 is the magnetic double nano ring element of the present invention, and 6 is sense amplifier.
Detailed description of the invention
The present invention explains orally in detail below in conjunction with embodiment.
One, embodiment prepared by device
Silicon chip is cut into 5 × 5mm2Size (silicon chip major parameter: p-type, resistivity:<0.0015>, crystal orientation:<100>, thickness:
375um), clean silicon chip, put in baking box, toast 30 minutes under 150 degree, after taking-up, be positioned on sol evenning machine, use suction pipe
Extract appropriate PMMA glue, drip full silicon chip (the positive glue of PMMA of 950K, model is AR-P 679), with the speed of 4000 turns, whirl coating 1
Minute, take off silicon chip, put into baking box, 150 degree baking 2 minutes after take out.Silicon chip after spin coating is put into electron beam exposure apparatus,
Electron beam exposure apparatus parameter is set to high pressure 30 kV, region dosage 300 uC/cm2, the coupled nanosecond ring pattern designed is used
Positive adhesive process is exposed on silicon chip.After silicon chip extracting, put into developer solution, develop 45 seconds, place into fixative solution 1 minute, going
After ionized water cleans, dry up silicon chip surface with nitrogen, and with microscope, amplification is adjusted to 100 times and observes nano-rings figure
Sample.The silicon chip with nano-rings pattern is put into electron beam evaporation plating instrument, and arranging electron beam evaporation plating long film speed is 0.02 nm/s,
Fine vacuum is 5 × 10-8Torr, the Ni of evaporation 50nm80Fe20On silicon chip, the Ta of last covered 3nm is as protective layer.From
Electron beam evaporation plating instrument takes out silicon chip, soaks half an hour in acetone, is then placed on ultrasonic inner several seconds and observes to electron beam photoresist
Completely fall off, be washed with deionized water clean, and dry up with nitrogen, prepare altogether and can be obtained by corresponding device.Prepared by the present invention
Embodiment prepares the device of four kinds of forms altogether, sees accompanying drawing 1.The dicyclo design parameter that four kinds of prepared degrees of coupling are different
For: (i) type coupled nanosecond twin nuclei (i.e. A device in accompanying drawing 1), the length of side of each ring is 800, a width of the 200 of ring limit
Nm, the length of side of ring endoporus is 400 nm, a length of 1400 nm of two interannulars, and i.e. two ring connecting places share a limit；(ii) type coupling
Closing nano double ring structure (i.e. B device in accompanying drawing 1), the length of side of each ring is 800, a width of 200 nm on ring limit, ring endoporus
The length of side is 400 nm, a length of 1600 nm of two interannulars；(iii) (i.e. C device in accompanying drawing 1) type nano double ring structure, by two points
Forming from monocycle, the spacing of two rings is 50 nm, and the length of side of each ring is 800, a width of 200 nm on ring limit, the length of side of ring endoporus
It is 400 nm；(iv) type nano double ring structure (i.e. D device in accompanying drawing 1), is separated monocycle by two equally and forms, each ring
The length of side is 800, a width of 200 nm on ring limit, and the length of side of ring endoporus is 400 nm, but the spacing of two rings is 500 nm.
Utilize micro-focusing Kerr magnetooptical effect instrument that four kinds of devices of the present invention are detected, it is possible to obtain each device is corresponding
Hysteresis curve, and observe in its hysteresis curve the magnetic domain at upturned position by magnetic force microscopy, its result sees accompanying drawing 3.A
Corresponding three adverse fields of the hysteresis curve of device, its size is respectively 120 oersteds, 300 oersteds and 460 oersteds, due to A
There are three adverse fields in device, the positive Bulbus Allii Cepae state-vortex state-anti-Bulbus Allii Cepae state of the magnetic Nano ring structure existence with document report
Twice transformation of magnetic domain is inconsistent, and inventor utilizes magnetic force microscopy to observe the change with magnetic field of its magnetic domain under different adverse fields
Change relation, knowable to the A device magnetic domain of Fig. 3 is with changes of magnetic field graph of a relation, three adverse fields of the hysteresis curve of A device correspond to
The transformation of positive Bulbus Allii Cepae state-upper ring vortex clockwise state-lower ring hour hands vortex state-anti-Bulbus Allii Cepae state, i.e. A device has novel magnetic domain knot
Structure.
Corresponding two adverse fields of the hysteresis curve of B device, overturn field between i.e. positive Bulbus Allii Cepae state-vortex state-anti-Bulbus Allii Cepae state, point
It is not 120 oersteds and 410 oersteds.Field is overturn between the contrast of B device and the vortex state-anti-Bulbus Allii Cepae state of C device and D device
For 510 and 590 oersteds, decrease more than 30%.And prior art, typically all single ring architecture or have certain ring spacing
Multiring structure, be analogous to the situation of C and D device, in the case of identical thickness, ring size and ring width, contrast with present
Monocycle device, A and B device has bigger advantage, i.e. more stable domain state and low upset field.Visible with prior art phase
Ratio, A, B device of the present invention has relatively low upset field.By accompanying drawing 2 understand described A and B device have relatively low vortex state to
Anti-Bulbus Allii Cepae state overturns field, and the magnetic domain of A device can realize continuously adjustabe control, and i.e. with changes of magnetic field, the magnetic domain of A device occurs
The transformation of positive Bulbus Allii Cepae state-upper ring vortex clockwise state-lower ring hour hands vortex state-anti-Bulbus Allii Cepae state, i.e. A device has novel magnetic domain knot
Structure, sees Fig. 3.Ining contrast to C device, the vortex state of B device reduces nearly 1/3rd to the upset field of anti-Bulbus Allii Cepae state.Visible right
Ratio and A and B device, the upset field of C and D device is relatively big, is unfavorable for the write of magnetic random memory.
For the performance that the device performance making the present invention is apparent, only A and B device is carried out micro-magnetic simulation, obtains accompanying drawing 4
Micro-magnetic simulation drawing.It can be seen in figure 3 that for A device (i.e. 8 word superimposed types in Fig. 4), its hysteresis curve occurs in that three
Individual step, corresponds respectively to the transformation between positive Bulbus Allii Cepae state-upper ring vortex clockwise state-lower ring hour hands vortex state-anti-Bulbus Allii Cepae state；
For B device, there are two steps in its hysteresis curve, is changed to positive Bulbus Allii Cepae state-vortex state-anti-Bulbus Allii Cepae corresponding to domain state
State.For B device, substantially reduce for the upset field of upset field contrast the 3rd step of A device of its second step.From
The simulation of micro-magnetic is it can be seen that its result is qualitative with experimental result is consistent.
The magnetic of this patent above-mentioned (i) (i.e. A device) it is obtained with from the accompanying drawing 5 of upset field with magnetic direction graph of a relation
Anisotropy behavior: A device has magnetic anisotropy in face, three adverse fields of its hysteresis curve are along with the change of magnetic direction
Can change.Hn、Han1And Han2Correspond respectively to positive Bulbus Allii Cepae state-upper adverse field of ring vortex clockwise state, upper ring clockwise
The adverse field of the adverse field of vortex state-lower ring hour hands vortex state and lower ring hour hands vortex state-anti-Bulbus Allii Cepae state (as in Fig. 2 to A device
Three peaks that hysteresis curve obtains after carrying out differential indicate).The position that we are parallel to the long limit of A device magnetic direction is defined as
0 degree, three upset fields are respectively 120 oersteds, 300 oersteds and 460 oersteds, Hn、Han1And Han2Along with magnetic field angle is from 0
Degree increases to 360 degree, has 4 degree of axis of symmetry, is i.e. changed to a cycle from 0 degree to 90 degree of magnetic field.HnAlong with magnetic field angle
Increase in nonlinear change, near 45 degree of magnetic field, reach maximum, be minima during 90 degree of magnetic field, Han1With HnBecome with magnetic field
The trend changed is consistent.And the 3rd adverse field Han3Only increase to 15 degree, 75 degree increasing to 90 degree from 0 in magnetic field is not 0, i.e. goes up
Ring vortex clockwise state and lower ring hour hands vortex state only increase to 15 degree, 75 degree in magnetic field from 0 and increase to 90 degree of existence, and magnetic field
The novel domain state of both is not there is from 15 degree to 75 degree.The magnetic anisotropy of A device can modulate three kinds of adverse field sizes,
And the change of domain state can be modulated so that A device has more advantage than C, D device, it may be assumed that available magnetic direction change
Modulate its adverse field and domain state.
Additionally, the magnetic domain of the A device of (i) type coupling double nano ring structure not only has the property that can realize continuously adjustabe control
Outside matter, the change of its magnetic domain also has positive Bulbus Allii Cepae state-upper ring vortex clockwise state-lower ring vortex clockwise state-anti-Bulbus Allii Cepae state.For
For the read-write that magnetic stores at random, the unit of nano-rings magnetic storage can be respectively defined as by the difference of vortex state direction of rotation
" 0 " and " 1 ". for the A device of this patent, the upper ring vortex clockwise state under its negative fluxfield and lower ring vortex clockwise state
Upper ring vortex clockwise state and the lower ring vortex clockwise state that can be respectively defined as under 0,1, and positive flux field can define more
New compiled code, the read-write compiling for magnetic random memory provides polynary selection.Furthermore, such as the upper ring up time in A device
Pin vortex state and lower ring vortex clockwise state, it is possible to make magnetic switch device have more different selection.
Fig. 6 and Fig. 7 is respectively the application A device structural representation as the embodiment circuit of magnetic cell.This enforcement
Example needs at the monolayer Ni at A device80Fe20On cover the MgO of 1 nm again, be deposited with the CoFeB of 3 nm on MgO, finally cover
Cover the Ta of 3nm as protective layer, even if A device becomes magnetic cell.Fig. 6 is signal write circuit, after being passed through electric current, and electricity
Flow and couple dicyclo memory element, signal write storage unit, it is desirable to the electric current of input does not break the magnetization of ring CoFeB layer through nanometer
State, electric current is after bit line and wordline, and in sense line, offset signal is 0, and access transistor passage is closed, and therefore, it can
By changing the direction that synchronous field size determines that the vortex state of layer of NiFe rotates, thus define write signal " 0 " and " 1 ", as
Really layer of NiFe vortex state is consistent with CoFeB layer vortex state direction of rotation, and signal is 1, otherwise, signal is 0.The embodiment of Fig. 7 is
Signal read circuit, after signal is written into nanometer coupling dicyclo memory element, reads to bit line by adding a read-out voltage
The number of winning the confidence, meanwhile, adds in wordline and selects voltage, and at this moment access transistor passage is opened, and therefore electric current flows through bit line
Can be detected by sense amplifier.In this case, when layer of NiFe vortex state and CoFeB layer vortex state direction of rotation it is on the contrary
High-impedance state, otherwise, layer of NiFe vortex state is consistent with CoFeB layer vortex state direction of rotation is low resistance state, and the record of a byte is
Determined by the current values detected.Relative to prior art, when this patent B device does magnetic random memory, its read and
Low upset field can be added during write just can realize (for monocycle), it addition, this patent A device stores at random as magnetic
Device, its code can have and more compiles selection, and the upper ring vortex clockwise state under positive flux field and lower ring can be selected suitable
Hour hands vortex state, or the upper ring vortex clockwise state under negative fluxfield and lower ring vortex clockwise state, be designated as compiled code 0 and 1.
Claims (9)
1. a magnetic device, including substrate and the unit being made up of soft magnetic materials being attached on substrate of insulant, its
The unit being characterised by described is two close or connected equilateral rectangles that 20～80nm soft magnetic material thin films are constituted by thickness
Ring is constituted, wherein: a length of 100nm of rectangular edges～1 μm, and the rectangle length of side: ring thickness is equal to 10:1～2:1, the spacing etc. of two interannulars
A ring limit, and the equal rounding of wedge angle of two straight-flanked rings in described unit is shared in 50 nm～two ring connecting places.
2. magnetic device as claimed in claim 1, it is characterised in that described straight-flanked ring width is 800nm, and ring thickness is
200nm, the spacing of two interannulars is zero, and the side of two ring connections is a straight line, and four rounding of angle angular radius of two rings are
200 nm。
3. magnetic device as claimed in claim 1, it is characterised in that described straight-flanked ring width is 800nm, and ring thickness is
200nm, the spacing of two interannulars is zero, and the side of two ring connections is all with the fillet of rounding, eight rounding of angle of two rings
Angular radius is 200 nm.
4. the preparation method of the magnetic device described in claim 1 or 2 or 3, it is characterised in that use mask on backing material
Manufacturing technology forms required two equilateral rectangle masterplate, then carries out two equilateral squares of soft magnetic materials formation of deposits on masterplate
The thin film of the soft magnetic materials of shape.
5. the preparation method of magnetic device as claimed in claim 4, it is characterised in that described backing material is silicon chip, by silicon
Sheet is positioned on sol evenning machine, drips spin coating after full silicon chip with PMMA glue, obtains uniform glue-line, then after the Si sheet scribbling glue-line is carried out
Dry, be exposed with electron beam exposure apparatus and develop and fixing, obtain the twin nuclei of required form, then with the side of electron beam evaporation plating
Method carries out the evaporation of soft magnetic materials in twin nuclei, then remove photoresist, obtains obtaining the dicyclo soft magnetic film of required form
Unit.
6. the preparation method of magnetic device as claimed in claim 5, it is characterised in that the material of evaporation is Ni80Fe20Soft magnetism
Material, the thickness of thin film is 50 nm.
7. the application in magnetic read-write device of the magnetic device described in claim 1 or 2 or 3.
8. the application in magnetic Nano switching device of the magnetic device described in claim 1 or 2 or 3.
9. the application in Magnetic Sensor of the magnetic device described in claim 1 or 2 or 3.
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| CN201610199587.2A CN105845823B (en) | 2016-04-04 | 2016-04-04 | A kind of magnetic device and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610199587.2A CN105845823B (en) | 2016-04-04 | 2016-04-04 | A kind of magnetic device and preparation method |
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| CN105845823B CN105845823B (en) | 2018-10-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195771A (en) * | 2017-05-02 | 2017-09-22 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
| CN110581214A (en) * | 2019-09-17 | 2019-12-17 | 云南大学 | Composite multilayer magnetic nanoring array memory device and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040213039A1 (en) * | 2003-04-23 | 2004-10-28 | Keio University | Magnetic ring unit and magnetic memory device |
| CN101363903A (en) * | 2008-09-16 | 2009-02-11 | 北京科技大学 | Magnetic field sensor utilizing ferromagnetic nanometer ring strong magnetic resistance effect |
-
2016
- 2016-04-04 CN CN201610199587.2A patent/CN105845823B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040213039A1 (en) * | 2003-04-23 | 2004-10-28 | Keio University | Magnetic ring unit and magnetic memory device |
| CN101363903A (en) * | 2008-09-16 | 2009-02-11 | 北京科技大学 | Magnetic field sensor utilizing ferromagnetic nanometer ring strong magnetic resistance effect |
Non-Patent Citations (1)
| Title |
|---|
| Y. REN等: "The angular dependence of magnetization reversal in coupled elongated Ni80Fe20 nanorings", 《JOURNAL OF APPLIED PHYSICS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195771A (en) * | 2017-05-02 | 2017-09-22 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
| CN107195771B (en) * | 2017-05-02 | 2019-10-25 | 云南大学 | Perpendicular magnetic anisotropic magnetic Nano lattice array device, preparation method and applications |
| CN110581214A (en) * | 2019-09-17 | 2019-12-17 | 云南大学 | Composite multilayer magnetic nanoring array memory device and preparation method and application thereof |
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| Publication number | Publication date |
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| CN105845823B (en) | 2018-10-09 |
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