JPS5970974A - Detection of deterioration in semiconductor laser - Google Patents
Detection of deterioration in semiconductor laserInfo
- Publication number
- JPS5970974A JPS5970974A JP17984082A JP17984082A JPS5970974A JP S5970974 A JPS5970974 A JP S5970974A JP 17984082 A JP17984082 A JP 17984082A JP 17984082 A JP17984082 A JP 17984082A JP S5970974 A JPS5970974 A JP S5970974A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- deterioration
- signal
- circuit
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体レーザの劣化検出方法に関し特にディジ
タル光ディスクに使用される半導体レーザの劣化検出に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method for detecting deterioration of a semiconductor laser, and more particularly to a method for detecting deterioration of a semiconductor laser used in a digital optical disk.
従来の光デイスク装置では、半導体レーザの劣化検出は
″積極的には行なっておらず定期的にあるいは劣化時に
交換するようになっていたので、半導体レーザの急激な
劣化やある期間使用後の半導体レーザの特性を把握しな
がら使用することかできなかった。このため、例えばデ
ィスクに情報を記録したいとき、所定の記録電流を流し
ても半導体レーザの劣化により記録パワーが不足し、正
常な情報記録をでさないという問題が発生する可能性が
あった。In conventional optical disk devices, the deterioration of the semiconductor laser was not actively detected, and it was replaced periodically or when it deteriorated. It was only possible to use the laser while understanding its characteristics.For this reason, for example, when you wanted to record information on a disk, even if a specified recording current was applied, the recording power would be insufficient due to the deterioration of the semiconductor laser, making it impossible to record information normally. There was a possibility that the problem of not being able to display the data could occur.
本発明の目的は光デイスク装置のイニシャル動作時に、
半導体レーザの劣化を毎回あるいは定期的に行なうこと
により、上述した記録障害を未然に防止することにある
。The purpose of the present invention is to
The purpose is to prevent the above-mentioned recording failure by deteriorating the semiconductor laser every time or periodically.
上記目的を達成するため、本発明では、半導体レーザが
劣化すると微分量子効率が下るという性質に着目し、装
置のイニシャル動作時に任意の2点のパワーを出すため
に必要な電流値を・サンプルホールドしておぎ、その差
を検出することにより半導体レーザの劣化状態を判断す
るようにしたことを特徴とする。In order to achieve the above object, the present invention focuses on the property that the differential quantum efficiency decreases as the semiconductor laser deteriorates, and samples and holds the current value required to output power at any two points during the initial operation of the device. The present invention is characterized in that the state of deterioration of the semiconductor laser is determined by keeping the semiconductor laser cool and detecting the difference.
以下本発明の一実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は半導体レーザの電流と出力パワーの特性を示す
。曲線1は正常時の、曲線2は劣化時の半導体レーザの
特性を示し、11□l I21 I’+2・工、2はあ
るパワーP、、P2を出すために必要な半導体レーザの
電流値を示す。半導体レーザの正常時のplとP2のパ
ワーを出すための電流値の差(121Ll)と劣化時の
P−1とP、のパワーを出すための電流値の差(I22
’2+ )をある劣化基準電圧と比較し、半導体レ
ーザの劣化を検出する。FIG. 1 shows the current and output power characteristics of a semiconductor laser. Curve 1 shows the characteristics of the semiconductor laser when it is normal, and curve 2 shows the characteristics of the semiconductor laser when it is deteriorated. show. The difference between the current values for producing the powers of pl and P2 when the semiconductor laser is normal (121Ll) and the difference between the current values for producing the powers of P-1 and P when the semiconductor laser is degraded (I22)
'2+) is compared with a certain deterioration reference voltage to detect deterioration of the semiconductor laser.
第2図は上記動作を実施する回路の1例を示し、18は
半導体レーザ10を駆動するための回路、19は半導体
レーザ10に流れている一流の劣化を検出する回路であ
り、パワー21時の駆動電流サンプルホールド回路14
とパワーP2時の駆動i電流サンプルホールド回路15
を含んでいる。サンプルホールド回路の切替えは、第5
図に示す如<、P、−CHK信号21と、P2−CHK
信号22とにより制御する。これらの信号は装置のイニ
シャル時を示ず信号CHK−GATE20から作られる
。FIG. 2 shows an example of a circuit that performs the above operation, in which 18 is a circuit for driving the semiconductor laser 10, 19 is a circuit for detecting deterioration of the first-rate flowing through the semiconductor laser 10, and when the power is 21 Drive current sample hold circuit 14
and drive i current sample hold circuit 15 at power P2
Contains. The sample and hold circuit is switched by the fifth
As shown in the figure, <, P, -CHK signal 21 and P2-CHK
It is controlled by the signal 22. These signals do not indicate the initial time of the device and are generated from the signal CHK-GATE20.
サンプル回路14.15にホールドされた駆動電流の値
はコンパレータ16により比較され、その差信号26が
コンパレータ17で半導体レーザの劣化基準となる信号
24とを比較されて半導体の劣化検出が行なわれる。The drive current values held in the sample circuits 14 and 15 are compared by a comparator 16, and the difference signal 26 is compared by a comparator 17 with a signal 24 serving as a deterioration reference for the semiconductor laser to detect deterioration of the semiconductor.
レーザパワーを変える時の半導体レーザ駆動回路18の
働きは次の通りである。まず、半導体レーザ10にパワ
ーP、を出すために駆動電流をある値に設定する。この
駆動電流によりレーザ10はパワーP、で発光し、モニ
タにパワーに比例したモニタ電流が流れる。そしてモニ
タ電流は抵抗4により電圧に変換され、オペアンプ5で
増幅されてモニタ出力信号28となる。自動パワー制御
回路8はモニタ出力信号28と基準信号27が一致する
ように動作し、一定のパワーP。The operation of the semiconductor laser drive circuit 18 when changing the laser power is as follows. First, a drive current is set to a certain value in order to output power P to the semiconductor laser 10. This drive current causes the laser 10 to emit light with a power P, and a monitor current proportional to the power flows through the monitor. The monitor current is converted into a voltage by the resistor 4 and amplified by the operational amplifier 5 to become the monitor output signal 28. The automatic power control circuit 8 operates so that the monitor output signal 28 and the reference signal 27 match, and the power P is constant.
が得られる。次に他の一点P2の駆動電流を得るためP
、−CHK信号21をオンにし、オペアンプ5の増幅度
を変化させると(実施例では増幅度を下げる)、モニタ
出力信号28と基準回圧27とのバランスがくずれ、変
動した分だけ一致しようと動作する。実施例ではレーザ
電流をもつとたくさん流す方向に働き、最終的にパ゛ワ
ーP、にて安定する。このようにしてパワーP。is obtained. Next, to obtain the drive current at another point P2, P
, -CHK signal 21 is turned on and the amplification degree of the operational amplifier 5 is changed (in the embodiment, the amplification degree is lowered), the balance between the monitor output signal 28 and the reference circuit pressure 27 is lost, and it is attempted to match by the amount of change. Operate. In the embodiment, when the laser current is applied, it works in the direction of flowing a large amount, and finally becomes stable at the power P. In this way, the power P.
時と22時のレーザ駆動電流を得て前述したような劣化
検出を行なう。Deterioration detection as described above is performed by obtaining the laser drive currents at 22:00 and 22:00.
以上の説明から明らかな如く本発明によれば装置の実使
用(リード・ライト)前にレーザの劣化状態を知ること
ができるため半導体レーザ″のパワー不足によるリード
・ライトの障害をなくすことができる。As is clear from the above description, according to the present invention, it is possible to know the state of deterioration of the laser before the device is actually used (read/write), thereby eliminating read/write failures due to insufficient power of the semiconductor laser. .
第1図は半導体レーザパワーと出力パワーの関係を、第
2図は第1図の曲線1と曲線2の微分量子効率を検出し
その検出値と基準値を比較する回路を示す。第3図は第
2図の回路に使う信号のタイミングチャートを示す。
1・・・正常時の半導体レーザの一流と出力パワーの関
係、
2・・・劣化時の半導体レーザ′の一流と1」)カパヮ
ーの関係、
3・・・半導体レーザのモニタ、
4・・・モニタの負荷抵抗、 5・・・OPアンプ、6
.7・・・抵抗、
8・・・自動パワー制御回路、
9・・・半導体レーザ駆動トランジスタ、10・・・半
導体レーザ、 11・・・抵抗、12・・・スイッ
チ1.1ろ・・・スイッチ2.14・・・リードザング
ルボールド回路、15・・・ライトサンプルホールド回
路、16.17・・・コンパレータ、
18・・・半導体レーザ駆動回路、
19・・・劣化検出回路、
20・・・半導体レーザのチェック信号、21・・・リ
ード時の半導体レーザチェック信号、22・・・ライト
時の半導体レーザチェック信号、23・・・ライト電流
とリード1流の差信号、24・・・劣化検出の基準信号
、
25・・・”2CI−1に時のゲイン切替スイッチ、2
6・・・抵抗、
27・・・基単ハワーにおける基準電圧、28・・・モ
ニタ出力信号。
代理人弁理士 薄 田
茅 l 図
茅 2 図
第3図
CHK (rlVE 20−ローーコーfl−CHバ2
/−[−一]−FIG. 1 shows the relationship between semiconductor laser power and output power, and FIG. 2 shows a circuit that detects the differential quantum efficiency of curves 1 and 2 in FIG. 1 and compares the detected value with a reference value. FIG. 3 shows a timing chart of signals used in the circuit of FIG. 1...Relationship between the semiconductor laser's first-class power and output power during normal operation, 2...Relationship between the semiconductor laser's first-class power and 1') capacitance during deterioration, 3...Semiconductor laser monitor, 4... Monitor load resistance, 5...OP amplifier, 6
.. 7... Resistor, 8... Automatic power control circuit, 9... Semiconductor laser drive transistor, 10... Semiconductor laser, 11... Resistor, 12... Switch 1.1... Switch 2.14... Read zangle bold circuit, 15... Write sample hold circuit, 16.17... Comparator, 18... Semiconductor laser drive circuit, 19... Deterioration detection circuit, 20... Semiconductor laser check signal, 21... Semiconductor laser check signal during read, 22... Semiconductor laser check signal during write, 23... Difference signal between write current and first read current, 24... Deterioration detection Reference signal of 25..." 2CI-1 is the gain changeover switch, 2
6...Resistance, 27...Reference voltage in unit power, 28...Monitor output signal. Representative Patent Attorney Usui Tamaya 2 Figure 3 CHK (rlVE 20-LawCofl-CH BA2
/-[-1]-
Claims (1)
において、任意の2点以上の電流値におけるレーザ出力
値をモニタ信号により検出し、この検出出力によりレー
ザの劣化を検出することを特徴とする半導体レーザの劣
化検出方法。A semiconductor laser driven by superimposing a pulse on a DC bias, wherein a laser output value at two or more arbitrary current values is detected using a monitor signal, and deterioration of the laser is detected based on the detected output. Deterioration detection method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17984082A JPS5970974A (en) | 1982-10-15 | 1982-10-15 | Detection of deterioration in semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17984082A JPS5970974A (en) | 1982-10-15 | 1982-10-15 | Detection of deterioration in semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5970974A true JPS5970974A (en) | 1984-04-21 |
JPH0544627B2 JPH0544627B2 (en) | 1993-07-06 |
Family
ID=16072812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17984082A Granted JPS5970974A (en) | 1982-10-15 | 1982-10-15 | Detection of deterioration in semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5970974A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60231183A (en) * | 1984-04-28 | 1985-11-16 | Fujitsu Ltd | Measurement of characteristics of semiconductor light emitting apparatus |
JP2012018067A (en) * | 2010-07-07 | 2012-01-26 | Fujitsu Ltd | Semiconductor laser evaluating device and semiconductor laser evaluating method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558069U (en) * | 1978-10-13 | 1980-04-19 | ||
JPS5710991A (en) * | 1980-06-24 | 1982-01-20 | Fujitsu Ltd | Laser diode control circuit |
-
1982
- 1982-10-15 JP JP17984082A patent/JPS5970974A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558069U (en) * | 1978-10-13 | 1980-04-19 | ||
JPS5710991A (en) * | 1980-06-24 | 1982-01-20 | Fujitsu Ltd | Laser diode control circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60231183A (en) * | 1984-04-28 | 1985-11-16 | Fujitsu Ltd | Measurement of characteristics of semiconductor light emitting apparatus |
JPH0579948B2 (en) * | 1984-04-28 | 1993-11-05 | Fujitsu Ltd | |
JP2012018067A (en) * | 2010-07-07 | 2012-01-26 | Fujitsu Ltd | Semiconductor laser evaluating device and semiconductor laser evaluating method |
Also Published As
Publication number | Publication date |
---|---|
JPH0544627B2 (en) | 1993-07-06 |
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