JPS5968947A - Electrical apparatus - Google Patents

Electrical apparatus

Info

Publication number
JPS5968947A
JPS5968947A JP18013182A JP18013182A JPS5968947A JP S5968947 A JPS5968947 A JP S5968947A JP 18013182 A JP18013182 A JP 18013182A JP 18013182 A JP18013182 A JP 18013182A JP S5968947 A JPS5968947 A JP S5968947A
Authority
JP
Japan
Prior art keywords
signal
wiring
signal lines
lines
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18013182A
Other languages
Japanese (ja)
Inventor
Tai Sato
佐藤 耐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18013182A priority Critical patent/JPS5968947A/en
Publication of JPS5968947A publication Critical patent/JPS5968947A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Abstract

PURPOSE:To prevent transmission delay by Mirror effect by separating the wirings for electrical signals which are changed each other in the relation of reversed phase and arranging approximately the lines for sub-signals sent from the same signal source. CONSTITUTION:The ground wire GND, 4-bit signal lines A1-A4, B1-B4, clock phi1, power supply line Vcc are approximately wired in parallel on a SOS substrate, and the signal lines A1-A4 are connected to the poly-Si leadout lines D1-D4 through windows C1-C4. Simultaneously, the signal lines A1-A4 in which signals may be changed reversely are not approximated and the signal lines B1-B4 in which signals may change in the other timings are alternately provided. Thereby, the rising/falling times can be improved by about 40% or more due to reduction of effective capacitance between the adjacent wirings. For the signal lines A0-A2, the sub-signal lines A01-A22 are respectively disposed in both sides of wiring. For A1, the same electrical signal is applied to A11, A12 and a current of A11, A22 is set to 1/2 of A1. At this time, operation of A1 occurs quicker than that of A11, A12 and the rising/falling time is improved by 70% or more than the conventional time. This structure is very effective for IC having a small capacity of wiring to the ground and a large wiring capacitance and is capable of remarkably improving signal delay.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は1種々の位相の電気信号をそれぞれ伝える複数
の信号線をほぼ平行に配列した信号線配線を有する電気
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electrical device having signal line wiring in which a plurality of signal lines each transmitting electrical signals of various phases are arranged substantially in parallel.

〔発明の技術的背景およびその問題点〕マイクロコンピ
ュータ、ゲートアレイ等のような論理素子、あるいは多
ビツト構成のメモリなどにおいては、8本ないしは16
本の信号線が隣接して平行に配列されたバス線を有して
一′る。例えば。
[Technical background of the invention and its problems] In logic elements such as microcomputers, gate arrays, etc., or memories with multi-bit configurations, 8 to 16
The signal lines are arranged in parallel with bus lines arranged adjacent to each other in parallel. for example.

第1図に8ビツトマイクロコンピユータの中央部分の断
面図を示す。シリコン−オン・す7アイヤ(SOS)配
線であって、サファイ層の上に約1μm厚のシリコン酸
化膜をへだでて、厚さ1μm、巾Lμmのアルミニウム
配線Wl、W2.W3がある。
FIG. 1 shows a sectional view of the central portion of an 8-bit microcomputer. These are silicon-on-SOS (SOS) interconnects, with a silicon oxide film about 1 μm thick being exposed on the sapphire layer, and aluminum interconnections W1, W2, 1 μm thick and L μm wide. There is W3.

これらアルミニウム配線Wl、W2.W3は、間隔Sμ
mへたてられて配置されている。第2図は。
These aluminum wirings Wl, W2. W3 is the interval Sμ
It is arranged vertically. Figure 2 is.

基板が導体の場合でバルクのLSI配線に相当する。バ
ルク層の上に第1図と同様に配置されたアルミニウム配
線Wl、W2.W3がある。
When the substrate is a conductor, this corresponds to bulk LSI wiring. Aluminum wirings Wl, W2 . There is W3.

このようなアルミニウム配線の電位なΔVだげ駆動する
のに要する時間Δ↑は、その駆動源の駆動電流YIとし
、その配線の持つ容量乞Cとすると、次式で与えられる
The time Δ↑ required to drive the aluminum wiring by a potential ΔV is given by the following equation, where YI is the drive current of the drive source and C is the capacitance of the wiring.

Δt=工   ・・曲…(1) ■ この配線の持つ容RCは、隣りの配線との間の容量C・
と対地容量Cgとの和である。しかしながら■ 隣接する配線の変化を考慮すると、実効容量CF。
Δt=Equation...(1) ■ The capacitance RC of this wiring is the capacitance C・
and the ground capacity Cg. However, ■ Considering changes in adjacent wiring, the effective capacitance CF.

は隣接の配線の電位変化により次の如くなる。depends on the potential change of the adjacent wiring as follows.

■ 逆相変化の場合 隣接する配線の一方が高電圧から低電圧へ変化し、他方
が同時に低電圧から高電圧へと逆相に変化する場合は、
相対的に電圧変化が2倍になったと考えられる。したが
って、 CF、=2C1+Cg    ・・・・・・・・・(2
)となる。
■ In the case of reverse phase change If one of the adjacent wires changes from high voltage to low voltage, and the other wire simultaneously changes from low voltage to high voltage in reverse phase,
It is considered that the voltage change was relatively doubled. Therefore, CF,=2C1+Cg (2
).

■ 異相変化の場合 隣接する配線の一方が変化し、同時には他方が変化しな
い場合は、そのまま、 CE=Ci+Cg   ・・・・・・・・・ +3Jと
なる。
■ In the case of a different phase change If one of the adjacent wirings changes and the other does not change at the same time, then CE=Ci+Cg . . . +3J.

■ 同相変化の場合 隣接する配線の両方が同相で同時に同方向に変化する場
合は、相対的には電圧変化がないと考えられるので、 c  =c      ・・・・・・・・・ (4)g となる。
■ In the case of in-phase change If both adjacent wires are in the same phase and change in the same direction at the same time, it is considered that there is no relative voltage change, so c = c... (4) It becomes g.

第3図、第4図に示した第1図、第2図に示した配線の
実効容量CEの実測値によれば上述した3つの態様の差
は大きく、特に第3図に示す、シリコン・オン・サファ
イヤ配線の場合は、はぼ2:1:0の割合になっている
。この実効容量の差は(1)式よりそのまま動作速度へ
影響することになり、特に■逆相変化の場合は容認しが
たい信号線動作の遅れとなる。しかしながら、従来の電
気装置では、そのようなことを考慮した配線とはなって
おらず、このよ5なミラー効果による遅れによる伝送信
号の遅延が生じ問題となっていた。
According to the actual measured value of the effective capacitance CE of the wiring shown in FIGS. 1 and 2 shown in FIGS. 3 and 4, there is a large difference between the three aspects described above. In the case of on-sapphire wiring, the ratio is approximately 2:1:0. According to equation (1), this difference in effective capacitance directly affects the operating speed, and especially in the case of negative phase change (2), it causes an unacceptable delay in signal line operation. However, in conventional electrical devices, the wiring does not take such things into account, causing a problem in that transmission signals are delayed due to delays due to the mirror effect.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情を考慮してなされたもので、このよう
なミラー効果による伝送信号の遅延を防止することを目
的とする。
The present invention has been made in consideration of the above circumstances, and an object of the present invention is to prevent delays in transmission signals caused by such mirror effects.

〔発明の概要〕[Summary of the invention]

この目的を達成するために、第1の発明による電気装置
は、互いに逆相関係で変化する電気信号を伝える仮数の
信号線を互いに離して配置したことを特徴とする。
In order to achieve this object, the electrical device according to the first invention is characterized in that mantissa signal lines that transmit electrical signals that change in an antiphase relation to each other are arranged apart from each other.

また、第2の発明による電気装置は信号源からの電気信
号を伝える信号線に対して、同一の信号源からの電気信
号を伝える副信号線を近接して配置したことを特徴とす
る。
Further, the electric device according to the second invention is characterized in that a sub-signal line that conveys an electric signal from the same signal source is arranged close to a signal line that conveys an electric signal from the signal source.

〔発明の実施例〕[Embodiments of the invention]

第1の発明の一実施例による電気装置を第5図に示す。 An electrical device according to an embodiment of the first invention is shown in FIG.

第5図は電気装置のバス配線を示したもので、接地線G
ND、4ピットの信号線A□、A2゜A3.A4.信号
線B、 、 B2. B3. B4.クロックφ0.電
源av。oが、シリコン・オン争シリコン基板上に平行
に近接してアルミニウム配線されている。信号線A□、
A2.A3.A4はコンタクトC。
Figure 5 shows the bus wiring for electrical equipment.
ND, 4-pit signal line A□, A2゜A3. A4. Signal lines B, , B2. B3. B4. Clock φ0. power av. Aluminum wires are arranged in parallel and close to each other on a silicon substrate. Signal line A□,
A2. A3. A4 is contact C.

C2,C3,C4によりポリシリコン層の引出し線D1
.D2.D3.D4に接続されている。第6図に示すよ
うに同時に逆方向に変化する可能性のある信号線A□、
A2.A3.A4は隣接させず、別のタイミングで変化
する信号線B□、B2.B3.B4を交互に配置してい
る。
The lead line D1 of the polysilicon layer is formed by C2, C3, and C4.
.. D2. D3. Connected to D4. As shown in Figure 6, signal lines A□, which may change in opposite directions at the same time,
A2. A3. A4 is not placed adjacent to the signal line B□, B2 . B3. B4 are arranged alternately.

本実施例によれば、立上り/立下り時間(全室40%以
上改善することができる。これは本実施例による隣接す
る配線間の実効容量が(3)式で示すように減少したこ
とによるものである。
According to this example, the rise/fall time (in all rooms) can be improved by more than 40%. This is due to the fact that the effective capacitance between adjacent wirings according to this example is reduced as shown in equation (3). It is something.

なお別のタイミングで変化する信号線が存在しない場合
には、接地線、電源線などの変化しない配線を信号線間
に挿入することとしてもよい。
Note that if there is no signal line that changes at another timing, a wiring that does not change, such as a ground line or a power line, may be inserted between the signal lines.

次に第2の発明の一実施例による電気装置を第8図に示
す。第5図に示すように信号線A。、A□。
Next, an electric device according to an embodiment of the second invention is shown in FIG. Signal line A as shown in FIG. , A□.

A2に対してそれぞれ副信号線A。1.Ao2.A□□
A sub signal line A for each A2. 1. Ao2. A□□
.

A□2.A2□、A2□ を両隣に配している。例えば
信号線A1  に対する2つの副信号線入よ□、Aよ2
には。
A□2. A2□ and A2□ are placed on both sides. For example, enter two sub signal lines for signal line A1, A and 2.
for.

同一の電気信号が伝送される。信号線A1  と副信号
線A□1.A1□に対してはそれぞれ別の駆動トランジ
スタにより駆動するものとし、副信号線A□□。
The same electrical signal is transmitted. Signal line A1 and sub signal line A□1. A1□ is driven by separate drive transistors, and the sub signal line A□□.

A1□に流れる電流値を、信号線A□に流れる電流値の
1/2とする。信号線A□および副信号線A1□。
The current value flowing through A1□ is set to 1/2 of the current value flowing through signal line A□. Signal line A□ and sub signal line A1□.

A12の動作は、第9図に示すように信号線A□の動作
の方が副信号線AH,A□2の動作よりはやい。
Regarding the operation of A12, as shown in FIG. 9, the operation of the signal line A□ is faster than the operation of the sub signal lines AH and A□2.

これは電流がより多(流れ、かつ両隣の副信号線A0□
、A□2には同一の電気信号が流れているため、配線間
の実効容量が(4)式で示されるものとなるためである
This means that more current (flows) and the sub signal lines A0□ on both sides
, A□2, the same electrical signal is flowing through them, so the effective capacitance between the wirings is as shown by equation (4).

このように本実施例によれば、立上り/立下り時間は第
10図に示すように、従来例の場合に比べ実に約70%
以上改善することができる。なお副信号線を1本のみ設
けても一定の効果が期待できる。
In this way, according to this embodiment, the rise/fall time is approximately 70% compared to the conventional example, as shown in FIG.
This can be improved. Note that even if only one sub-signal line is provided, a certain effect can be expected.

第1の発明および第2の発明の実施例においては、シリ
コン・オン・サファイヤ(SOS)基板における集積回
路の配線について説明したが、プリント基板上における
配線や通常の線材を束ねた配線を有する電気装置に対し
ても、第1の発明および第2の発明を適用できる。
In the embodiments of the first invention and the second invention, the wiring of an integrated circuit on a silicon-on-sapphire (SOS) substrate has been described, but the wiring on a printed circuit board or the wiring having a bundle of ordinary wires is also described. The first invention and the second invention can also be applied to the device.

なお、第3図、第4図、第7図、第10図における実測
値は、シリコン・オン・サファイヤ基板で、アルミニウ
ム配線層厚が1μm、その下の配化膜厚が1μm、さら
にその下のサファイヤ層が250μmで、配線間隔Sと
配線幅りとの関係がS=1.5LとしてLを変化させて
実測したものである。
Note that the actual measured values in Figures 3, 4, 7, and 10 are for a silicon-on-sapphire substrate, with an aluminum wiring layer thickness of 1 μm, an underlying interconnection layer thickness of 1 μm, and a silicon-on-sapphire substrate. The sapphire layer is 250 μm, and the relationship between the wiring spacing S and the wiring width was actually measured by changing L, assuming that S=1.5L.

〔発明の効果〕〔Effect of the invention〕

以上の通り、本発明によれば、ミラー効果による伝送信
号の遅延を大幅に改善することができる。
As described above, according to the present invention, delay in transmission signals due to the Miller effect can be significantly improved.

特ニシリコン・オン・サファイヤ基板上ノ集積回路の場
合のように、配線の対地容泣が小さく、対配線容量が大
きい場合には、有効である。
This is particularly effective when the wiring has a small ground resistance and a large wiring capacitance, as in the case of an integrated circuit on a silicon-on-sapphire substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図はそれぞれ従来の電気装置の信号線配線
の具体例を示す断面図、 第3図、第4図はそれぞれ第1図、第2図に示す電気装
置における配線間の実効容量を示すグラフ。 第5図は第1の発明の一芙施例による電気装置の信号線
配線を示す平面図、第6図は同装置の電気信号を示すタ
イムチャート、第7図は同装置の電気信号の立上り/立
下り時間を示すグラフ。 第8図は第2の発明の一災施例による電気装置の信号線
配線を示す平面図、第9図は同装置の電気信号を示すタ
イムチャート、第10図は同装置の電気信号の立上り/
立下り時間を示すグラフである。 Wl、W2.W3・・・アルミニウム配線、L・・・配
線幅、S・・・配線間隔、co・・・配線間実効容量、
Ao。 A□、 A2. A3. A4. B□、B2yB3*
B4パ・信号線、C□、C2,C3,C4・・・コンタ
クト、Dよ、 D2 p D3 ’D4・・・引出し線
、Aol j A02 j A11 j A12 e 
A211A2゜・・・副信号線、GND・・・懺地線、
■cc・・・電源線、φ1・・・クロッ°り。
Figures 1 and 2 are cross-sectional views showing specific examples of signal line wiring in conventional electric devices, respectively. Figures 3 and 4 are cross-sectional views showing the effective relationship between wiring in the electric devices shown in Figures 1 and 2, respectively. Graph showing capacity. FIG. 5 is a plan view showing the signal line wiring of the electrical device according to one embodiment of the first invention, FIG. 6 is a time chart showing the electrical signals of the device, and FIG. 7 is the rise of the electrical signal of the device. /Graph showing fall time. Fig. 8 is a plan view showing the signal line wiring of the electric device according to the disaster embodiment of the second invention, Fig. 9 is a time chart showing the electric signal of the same device, and Fig. 10 is the rise of the electric signal of the same device. /
It is a graph showing fall time. Wl, W2. W3...aluminum wiring, L...wiring width, S...wiring spacing, co...inter-wiring effective capacitance,
Ao. A□, A2. A3. A4. B□, B2yB3*
B4 signal line, C□, C2, C3, C4...Contact, D, D2 p D3 'D4...Leader line, Aol j A02 j A11 j A12 e
A211A2゜...Sub signal line, GND...Saiji line,
■cc...power line, φ1...clockwise.

Claims (1)

【特許請求の範囲】 1、種々の位相の電気信号をそれぞれ伝える複数の信号
線をほぼ平行に配列した信号線配線を有する電気装置に
おいて、 互いに逆相関係で変化する電気信号を伝える複数の信号
線を互いに離して配置したことを特徴とする電気装置。 2、種々の位相の電気信号をそれぞれ伝える複数の信号
線をほぼ平行に配列した信号線配線を有する電気装置に
おいて。 信号源からの電気信号を伝える信号線に対して、前記同
一の信号源からの電気信号を伝える副信号線を近接して
配置したことを特徴とする電気装置。
[Claims] 1. In an electrical device having signal line wiring in which a plurality of signal lines each transmitting electrical signals of various phases are arranged substantially in parallel, a plurality of signals transmitting electrical signals that change in an opposite phase relationship with each other. An electrical device characterized by wires arranged at a distance from each other. 2. In an electrical device having signal line wiring in which a plurality of signal lines each transmitting electrical signals of various phases are arranged substantially in parallel. An electric device characterized in that a sub-signal line that conveys an electric signal from the same signal source is arranged close to a signal line that conveys an electric signal from the signal source.
JP18013182A 1982-10-14 1982-10-14 Electrical apparatus Pending JPS5968947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18013182A JPS5968947A (en) 1982-10-14 1982-10-14 Electrical apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18013182A JPS5968947A (en) 1982-10-14 1982-10-14 Electrical apparatus

Publications (1)

Publication Number Publication Date
JPS5968947A true JPS5968947A (en) 1984-04-19

Family

ID=16077950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18013182A Pending JPS5968947A (en) 1982-10-14 1982-10-14 Electrical apparatus

Country Status (1)

Country Link
JP (1) JPS5968947A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198134A (en) * 1986-02-26 1987-09-01 Hitachi Ltd Semiconductor device
JP2003007823A (en) * 2001-06-20 2003-01-10 Mitsubishi Electric Corp Signal bus arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198134A (en) * 1986-02-26 1987-09-01 Hitachi Ltd Semiconductor device
JP2003007823A (en) * 2001-06-20 2003-01-10 Mitsubishi Electric Corp Signal bus arrangement

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