JPS5965989A - Magnetic bubble transfer gate - Google Patents

Abstract

PURPOSE:To realize the transfer of a bubble between loop-like transfer lines by power consumption being as minute as possible in a transfer gate which is capable of executing the transfer of a bubble by providing a band-like conductor pattern which is formed so that a part of the transfer line is overlapped. CONSTITUTION:A bubble is transferred to a position of 35 through positions of 33 and 34 on the second transfer line 22 by a counterclockwise in-face rotating magnetic field. When the bubble comes to the position of 35, the rotating magnetic field is directed to the direction as indicated with an arrow 27. When a current pulse is impressed from this phase to a conductor pattern 24 in the direction as indicated with an arrow 25, a bias magnetic field distribution is induced in a gap part between the second transfer line and the third transfer line due to disorder of a current distribution caused by an opening provided on the conductor pattern 24. The bubble of the position of 35 receives driving force for going toward a position of 36 by this bias magnetic field distribution and is transferred to the position of 36. During this time, the bubble is held in the position of 36 by a cavity of the bias magnetic field distribution, which is generated in the position of 36.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a transfer gate in a magnetic bubble device. More specifically, the present invention relates to a transfer gate that can arbitrarily transfer bubbles between two loop-shaped transfer paths.

Since the magnetic bubble element is essentially a serial access memory device, it has the disadvantage that access to information becomes slow when trying to make the memory more compact by increasing the storage density.

In order to overcome the drawbacks of such magnetic bubble elements, the Institute for Transactions on Magnetics (IEK) was already launched in November 1981.
E Transaction on Magnetie
In a paper published in MAG-17, No. 3, pp. 3038-3040 of the ``S'' magazine, a new element-depleted magnetic bubble resistor called the on-chip cache method was proposed, and it was proposed to shorten access time. It has been shown to be very effective. FIG. 1 schematically shows the element configuration of the on-chip cache method described in the above paper. In FIG. 1, li is a bubble generator and 2 is a bubble detector. 4 is a minor loop for caching in which frequently accessed information (bubble string) is stored. 5 is a storage minor loop in which information that is accessed infrequently is stored. Transfer of puzzles between the major transfer path 3 and the cache minor loop 4 is performed by a first transfer gate 6. Transfer of bubbles between the cache minor loop 4 and the storage minor loop 5 is performed by the second transfer gate 7. FIG. 2 shows the specific shape of the conductor pattern used in the second transfer gate shown in the above paper. As can be understood from Figure 2, conventional conductor patterns have narrow meandering parts, which have high electrical resistance, which is a serious problem in that the power consumption required to stably transfer bubbles increases. However, it is an object of the present invention to provide a magnetic bubble transfer gate that can transfer bubbles between loop-shaped transfer paths necessary for an on-chip cache method with as little consumption and force as possible. It is in.

That is, the present invention provides a first magnetic bubble transfer path formed on a magnetic thin film capable of holding magnetic bubbles, and a loop-shaped second magnetic bubble transfer path formed at a constant distance from the $1 transfer path. , and a loop-shaped third magnetic bubble transfer path formed at a constant interval from the second transfer path, in a transfer gate formed in a magnetic bubble element. Jt is a band-shaped conductor pattern formed between the conductor pattern and the transfer path so that a part thereof overlaps with a part of the second and third transfer paths, respectively, and an opening is formed in the conductor pattern.

This magnetic bubble transfer gate is characterized in that one end of the opening reaches near the second transfer path, and the other end reaches near the third transfer path.

Next, the present invention will be explained in detail based on an example of implementation of the present invention shown in FIG. In FIG. 3, 21f'i is a first transfer path, 22 is a loop-shaped second transfer path, 23 is a loop-shaped third transfer path, 24 is a conductor pattern, and the bubble transfer direction 31 is a broken line arrow. It is indicated by. 32 represents an opening provided in the conductor pattern, and 41 represents the direction of the bias magnetic field. In this embodiment and second and third embodiments to be shown later, the first transfer path 21. The second transfer path 22 and the third transfer path are formed by selectively implanting ions into the magnetic thin film. Since the puzzle transfer means between the first transfer path 21 and the second transfer path 22 is already known, the explanation thereof will be omitted here. From the second transfer path 22 to the third transfer path 2
The transfer of the bubble to No. 3 is performed as follows. The bubble is transferred to position 35 via positions 33 and 34 on the second transfer path 22 by a counterclockwise in-plane rotating magnetic field (hereinafter simply referred to as a rotating magnetic field). When it reaches , the rotating magnetic field is oriented in the direction of arrow 27.

When a current pulse is applied to the conductor pattern 24 in the direction of the arrow 25 from this phase, the second
A bias magnetic field distribution is induced in the gap between the transfer path and the third transfer path. The bubble at position 35 receives a driving force toward position 36 due to this bias magnetic field distribution and is transferred to (etl rR at 36).If the application continues over the phase range shown by the arrow of vt current pulse 29, The bubble is held at position 36 by the concavity of the bias magnetic field distribution generated at position 36. At the time when W, the current pulse is cut off, the rotating magnetic field is pointing in the direction of arrow 28, and at this time, the bubble is held at position 36. A charged wall that attracts bubbles is formed at the position.Thereafter, as the charged wall moves by the rotating magnetic field, the bubbles are transferred to the third transfer path and transferred to the position 38.

Transfer of bubbles from the third transfer path to the second transfer path is performed as follows. On the third transfer path 23, the bubble is transferred to position 36 after passing through 38% 39 r. When the bubble reaches position 36, the rotating magnetic field is
It is facing the direction of 8.

From this phase, if a current pulse in the direction of arrow 26 is applied to the conductor button 24 in the phase range shown by arrow 30, the puzzle can be solved in the same way as in the case of bubble transfer from the second transfer path to the third transfer path. It is possible to transfer from the third transfer path to the second transfer path.

The transfer of bubbles from the third transfer path to the @2 transfer path is 38
．． The positions of 39, 36, 35, and 4o are sequentially performed. In the above bubble transfer, if a current pulse is not applied to the conductor button, the bubble will be transferred to the second transfer path or t'
Transfer continues through the i-th transfer path.

The conductor button 24 shown in the above embodiment has a wider conductor width than the conventional conductor button shown in FIG. 2, and therefore has a lower electrical resistance. Therefore, by implementing the present invention, it is possible to realize a magnetic bubble transfer gate that can stably transfer bubbles between loop-shaped transfer paths with little power consumption. This is a second embodiment of the present invention tilted. When the puzzle being transferred through the second transfer path 22 reaches the position 35, if a current pulse in the phase range shown by the arrow 29 is applied to the conductor button 24 in the direction of the arrow 25, then using FIG. Based on the explained principle, the bubble passes through 36 positions to the third transfer path 2.
Transferred to 3. The direction lines of the rotating magnetic field when the two τ flow pulses are applied and when they are stopped are respectively represented by arrows 27 and 28.

Similarly, when the bubble being transferred through the third transfer path 23 comes to the position 36, a current pulse in the phase range shown by the arrow 30 in the direction of the arrow 26 is applied to the conductor button 24, and the bubble moves to the position 35. is transferred to the second transfer path 22. The directions of the rotating magnetic field when the current pulse is applied and when it is stopped are respectively represented by arrows 28 and 27.

FIG. 5 shows a third implementation Fll of the present invention in which the central axes of the second transfer path 22 and the third transfer path 23 are slightly shifted. When the bubble being transferred through the second transfer path 22 reaches the position 35, if a current pulse in the phase range shown by the arrow 29 is applied to the conductor button 24 in the direction of the arrow, the bubble will wake up using FIG. Based on the principle explained above, the bubble is transferred to the third transfer path 23 via 36 locations. The directions of the rotating magnetic field when the current pulse is applied and when it is stopped are respectively represented by arrows 27 and 28. Similarly, when the bubble being transferred through the third transfer path 23 reaches position 36, the arrow 2 appears on the conductor pattern 24.
If a current pulse in the phase range indicated by the arrow 30 is applied in the direction of 6, the bubble will pass through the position 35 and move to the second transfer path 22.
will be forwarded to. The directions of the rotating magnetic field when the current pulse is applied and when it is stopped are respectively represented by arrows 28 and 27.

The first transfer path, the second transfer path, the third transfer path, and the conductor button may have various shapes other than the embodiments shown in FIGS. 3, 4, and 5. Needless to say, any shape that can transfer bubbles according to the principle explained using FIG. 2 is included in the present invention.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of an on-chip carriage type magnetic bubble element. Fig. 2 shows a conventional conductor button, and Figs. 3, 4, and 5 show examples of the transfer gate of the present invention, and at the same time show the operation of a magnetic bubble element using the transfer gate. Figure shown. IFi bubble generator, 2 is bubble detector, 3 is major transfer path, 4 is cache Jfl-minor loose,
5 is a storage minor loop, 6 is the first transfer gate, 7 is the second transfer gate, 21
is the first transfer path, 22t is the loop-shaped second transfer path, 2
3 is the loose third transfer path, 24t1 conductor slam, 25.26 is the direction of the current pulse, 27.28 is the direction of the rotating magnetic field, 29°30tj is the applied phase range of the current pulse, and 31 is the bubble transfer. Direction, 32 is the opening provided in the conductor button, 33+34135@36v37138+
:19+40 is the position of the bubble during transfer, and 41 is the direction of the bias magnetic field. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] 1. A first magnetic bubble transfer path formed on a magnetic thin film that holds and obtains magnetic bubbles, and a second magnetic bubble transfer path formed at a constant distance from the first transfer path and shaped like an FC loop. In a transfer gate formed in a magnetic bubble element having a magnetic bubble transfer path and a loop-shaped third magnetic bubble transfer path formed at a constant interval from the second transfer path, A band-shaped conductor pattern is formed between the transfer path and the third transfer path so that a portion of the conductor pattern overlaps with a portion of the second and third transfer paths, respectively. 1. A magnetic bubble transfer gate characterized in that one end of the opening reaches near the second transfer path, and the other end reaches near the third transfer path. 2. The magnetic bubble transfer gate according to claim 1, in which the magnetic bubble transfer path is selectively formed in a magnetic thin film.