JPS5963819A - Circuit for generating high voltage pulse - Google Patents

Abstract

PURPOSE:To shorten the time required for the generation of a high voltage pulse by connecting a contact switch and a semiconductor switching element in parallel with a negative load and actuating the contact switch by the discharge of heat. CONSTITUTION:When AC power is applied between R and N, voltage is applied to a semiconductor Q through an inductor L and the contact switch S and the semiconductor Q is turned on and turned to low impedance. Subsequently, discharge is generated among a discharging electrode, a fixed electrode and a bimatal movable electrode through a capacitor C and heat is dispersed.

Description

[Detailed Description of the Invention] The present invention relates to a high-voltage pulse generation circuit, and more specifically, a contact switch (hereinafter referred to as a vehicle contact) in parallel with a negative 9 load (hereinafter simply referred to as a load). The present invention also relates to a device that is equipped with a semiconductor switch element (hereinafter simply referred to as a semiconductor) and that operates a contact point by heat dissipation to generate a high voltage pulse to a load.

Conventionally, this type of high-voltage pulse generation was completely
0047, Special Publication No. 56-27067, Special Publication No. 56-46
292, is known. The main focus of these efforts was on semiconductors and pulse oscillations, and no consideration was given to sensitivity to the load and surrounding conductivity or methods for preventing high-speed switching. On the other hand, in the generation of high-pressure pulses using the GLO method, sensitivity to temperature is taken into consideration, but there is a drawback that it takes time to generate high-pressure pulses.

The present invention was devised in order to eliminate such drawbacks, and is characterized by the extremely high contact opening speed of the contacts and the generation of one to several high voltage pulses by the use of semiconductors.

Embodiments of the present invention will be described below with reference to the drawings.

Figure 1 (a) N (+13 is an equivalent circuit diagram showing one embodiment of the present invention, and no load is connected.
, N is an AC power supply, 14 is an inductor, S is a contact, Q is a semiconductor, D is a diode, A is an inductor L and a contact S
B is the midpoint between the semiconductor Q and the N-side power supply, C is the capacitor, and the contact S is when the fixed pole and bimetal movable shelf are in the initial state and the contact is set to ON in the glow bulb. Furthermore, it has a discharge electrode. In Fig. 1(a), between AC power supplies R and N, connect the R side to the inductor, and connect the middle point A to the built-in point S.
ON contact in - half 4 body Q - middle point BN - first circuit passing through N side and R side - inductor l, - to middle point - discharge electrode in contact S - capacitor C - middle point BN ( 111.

Next, to explain the circuit, the inductor L is composed of a linear inductor having an impedance drop, such as a choke coil or a leakage coil.The semiconductor Q is composed of a linear inductor having an impedance drop, such as a choke coil or a leakage coil. A diac with a directional two-terminal thyristor, a bidirectional trigger diode, and a unidirectional two-terminal thyristor with a PNPN switch (Shockley diode) consists of Q, and V9o of the semiconductor Q is at least the impedance of the inductor L. This value is higher than the voltage drop value V+o and is equal to or lower than the peak voltage value Vpρ of the AC power source. In other words, ■D (V hit≧VPP).

Next, to explain the electrical 11711 operation, when AC power is applied between R and N, the first circuit becomes an inductor, and a voltage is applied to the semiconductor Q through the contact S, and the half 2Ω body Q is ignited, resulting in a low impedance. At the same time, the second circuit is discharged through the capacitor C between the discharge electrode, the fixed shelf, and the bimetal movable pole, and the heat is absorbed. Due to this heat dissipation, the bimetal movable shelf turns off the contacts at high speed IJfIj&. At the instant of this OFF, inductors 1 and 2 generate an induction kick voltage to generate one high voltage pulse between A and 8, completing the operation. When the operation is completed, the contact point S of the first circuit becomes open and non-conductive, and the semiconductor Q similarly becomes low impedance.

However, since the second circuit continues to receive 77 current, the contact point 3 continues to operate in an open state until the FF is cut off.

@1 Figure (b) shows a diode D connected in parallel with the contact S in Figure 1 (a), and the contact S is connected only in the positive half cycle.
This circuit is designed so that only the discharge electrodes in the circuit are turned off, and the electrical operation is performed in the same way as in FIG. 1(a), but the first circuit is conductive only in the negative half cycle, and the In the circuit, when the contact S is turned off, the discharge of the discharge electrode is stopped by 1F,
Canceling the thermal control and turning on the contact point S again. Contact point S
When turned on, the same operation is repeated again until the voltage is cut off, and one high voltage pulse is generated per operation.

Figures 2 (11), (b), and (c) are similar to Figures 1 (a) and (h).
) is an equivalent circuit diagram showing a second embodiment in which a heating element is used in place of the glow discharger FJ, and the same symbols as in FIG. 1 are omitted.

In the figure, the furnace is a contact point, LA is a heating element, l is a bimetal, and 2 is a thermal coupling. The contact point Sl has a /l'X type'm type inner m sphere and has a heating element such as nichrome wire or tungsten, and a movable bimetallic coil, and the contact point is set to be ON in the initial state.

Next, to explain the electrical operation shown in FIG. 2 (11), R
When an AC power supply is applied between 1N, a voltage is applied to the semiconductor Q through the tungsten-bimetal contact in the power supply R side and the contact point S', causing it to ignite and become low impedance. When the impedance of the semiconductor Q becomes low, the circuit becomes conductive, and the tungsten in the contact point S rapidly generates heat by itself, dissipating heat, moving the bimetal, and opening the contact point at high speed to turn it off.

At this moment of turning off, the inductor L generates an inductor kick voltage to generate one high voltage pulse between A and 8, completing the operation. When one operation is completed, the contact point S' becomes open and non-conducting.
The circuit is no longer energized and the semiconductor Q likewise has a low impedance. When the circuit is turned off, the self-heating of the heating element inside the contact point S' stops, and the heat Wfl't
During the process, the temperature decreases, and as a result, the bimetal contact points in the direction of turning on, and the contact point S' turns on.
be done. When the contact point S' is turned on, the same operation is repeated again until the voltage is cut off, producing one high voltage pulse.
This occurs once in wJ's work.

The second (&+(11) is a diode D connected in parallel with the contact point S' in FIG. 1(a), and the circuit is always energized during the first half cycle.The electrical operation is It is almost the same as Fig. 1(a), but the difference is that the voltage applied to the contact point J is only during the positive half cycle, and is not applied when the contact point S' is OFF and during the positive half cycle. This circuit generates three high-voltage pulses in one operation and repeats the operation indefinitely until the voltage is cut off, as in FIG. 1(a).

In Fig. 2(C), instead of the contact point S of the first IU(a), the heat generating f1ζL8 and the bimetal (1) are thermally coupled (2), and the heating element LA is, for example, a light bulb or a nichrome wire. , tungsten, thermistor, etc., and the contact is opened by thermally coupling (2) the bimetal (1) by heat dissipation of the heating element LA. The electrical operation is exactly the same as that shown in FIG. 2(a).

The above-mentioned Fig. 1 shows that the contacts S and S' are operated by heat dissipation by glow Ti electricity, and Fig. 2 shows that the contacts S and S' are operated by heat dissipation by emitted pH 4$. By setting the OFF time of the contacts S and S' to the load, for example, the time required for thermionic emission and discharge of the filament (cathode) of a fluorescent lamp, it is possible to respond to the load. Further, in order to correspond to the ambient temperature, if the temperature is set at least 10 to several 100 degrees Celsius higher than the ambient temperature, preferably 80 degrees Celsius or higher, stable operation can be performed without being affected by the ambient temperature F#Ia degrees.

Also, if the discharge capacitor C in Figure 1 is replaced with a resistor,
While it operates in the same way as capacitor C, it operates in the same way even if the connection between A-8 is rearranged. Further, the connection recombination between A-8 in FIG. 2 is the same, and does not limit the present invention in any way.

It should be noted that, except for the inductor L and the load, the high-voltage pulse generating circuit shown in FIGS. 1 and 2 of the present invention is used to control an AC blinking circuit and a switching circuit, which is a matter of literature.

FIG. 3(a), (++) shows an embodiment of the present invention. It is a mechanism diagram of Js. In the figure, 3 is a glass bulb, 5
is a fixed pole, 6 is a bimetal, 7 is a discharge electrode, and 8 is a commercial body. In figure (a), a glass bulb (3) is filled with gas, and a fixed pole (5) and a bimetal (6) are connected. The discharge electrode (7) is positioned slightly away from the fixed electrode (5) and the bimetal (6), and conductive wires are drawn from each to the outside of the glass bulb (3). It is. Next, in Figure (1)), a glass bulb (3) is filled with gas, and a bimetal (6) and a fixed electrode (5) are placed near a heating element (8) such as tungsten or nichrome wire, slightly apart. It has a conductive wire drawn out to the outside as shown in Figure (a). The operation is as explained in FIG. 81 and FIG.

FIG. 4 is a circuit diagram showing a first applied embodiment of the present invention, and explanations of the same symbols as shown in FIG. 1 described above will be omitted. In the figure, FL is a load, such as a 7ff lamp,
f and f2 are the cathodes of the load FL (filament 1-);
c' is a capacitor for extending the pulse width, RO is a resistor for discharging, and between R and N, an inductor L and a load FL form a series circuit, and both sides of the secondary side of the cathodes f1 and f2 of the carrier In between, the phlegm point S and the rectifier element are connected in parallel in the 1F row, and are connected in series with the semiconductor Q, and the discharge electrode of the contact point S is connected to the cathode f2 side via a resistor. . Further, a capacitor C' is connected in parallel with the load FL at the midpoint between the inductor L and the cathode and between the cathode f2 and the semiconductor Q.

Next, to explain the circuit of Fig. 4, the AC vLII sources R and N are AC10θV, 50Hz or 60H2,
The inductor L is, for example, a single-chip coil for FCL-30W, and is a linear inductor with an ishipetance drop voltage VID of about 55V, the load FL is, for example, an FCL-30W fluorescent lamp, and the contact S is, for example, the contact switch explained in FIG. 1.
The semiconductor Q is, for example, a silicon bidirectional switching element and has a voltage of V[lO90 to 130V.

rH about 50 mA% The diode D is, for example, a silicon rectifying element for rectification, and the capacitor C' is drawn with a value of at least 10Ω or more. Is the contact S the heat of the load FL? In order to synchronize with the lighting time leading to lil factor, ionization, and discharge, the breakage for discharge and the bimetal in the contact point S are mechanically and physically synchronized with the lighting time of the load container, and for example, the timing is adjusted depending on the ambient γ temperature. At 25°C, the lighting time of load Fl- is approximately 0.1 to 0.8 seconds,
Also, at a low temperature of 1.11 degrees -10'C, about 0.3 ~]
・Filaments f+ and f2 of load PL for 5 seconds
The red-hot time of the contact point S and the contact open time of the contact point S are thermally synchronized in accordance with the ambient temperature.

Next, to explain the electrical operation in FIG.
The semiconductor Q is formed by an electric path passing through the parallel circuit of the cathode fL, the contact point S and the rectifying element, and an electric path passing through the power supply N side and the cathode f2.
A voltage within the value of V is applied to the semiconductor (ICQ), which turns on and becomes low impedance.At the same time as the voltage is applied, it passes through the contact S and discharges through the resistor during a positive half cycle. There is a third circuit that charges the second circuit, the capacitor C'.When the semiconductor Q of the first circuit becomes low impedance, the first circuit becomes conductive and is energized.This energization causes the cathode f+, f2 is a negative half cycle of the rectifying element and a positive half cycle of the contact S, that is, the full wave due to parallel connection (actually due to conduction of the contact S), and the quality begins to rise rapidly by 7 and the load is reduced within a short time. FL reaches thermionic emission, while the discharge electrode of the contact point S also starts to rapidly self-heat every positive half cycle when the rectifying element is not connected. Similarly, the contact point S is turned ON. At the moment when the contact S turns OFF, the inductor L generates an inductive kick voltage, and the pulse width is extended by the action of the capacitor C' in the third circuit, and the load FL is
One high voltage pulse is applied between negative if+ and 12 of . At this time, if enough thermionic electrons are emitted from the negative electrodes 1Jif+ and f2, the load FL is changed to the negative electrode f+ by one high-voltage pulse.
, 12, the discharge occurs. When thermionic electrons of the cathodes f+ and 'f2 are insufficient, the @ryu Shikori continues to preheat by half a cycle of the mortar, and the contact point S is turned ON again and the same operation is repeated at an accelerated rate to generate a high-voltage pulse. occurs and causes the load ratio to discharge. When the load FL reaches 'M', the inductor drops its own impedance and supplies a constant m force to the load ratio. There are three operations during this impedance drop, one of which is that the impedance drop voltage VID is lower than Vso. In the second case, the contact point S is in the OFF state for a short period of time. In case 3, the load ratio exhibits mortar characteristics and the impedance becomes low. This means that in the semiconductor Q, the relationship between the [1] inductor L and the half-half body Q is ■o(Ve
The arc is extinguished by z. [2'l Since the contact S is in the OFF state, the arc is extinguished by the disappearance of the holding current (■). [3] By generating a high-voltage pulse and extending the time of the capacitor C', a reverse bias is applied to the semiconductor Q through the rectifier to the space charge between the junctions, which absorbs the space charge and extinguishes the arc. This [1
), [2), and [), the semiconductor Q undergoes a high-speed blocking transition and reaches a high impedance. On the other hand, since the load ratio is low impedance, the contact S of the second circuit stops discharging, returns the contact S, and turns ON.

At this time, even if the contact point S is turned on, the semiconductor f1 of the first circuit
, Q is high impedance, so current is no longer applied to the series-parallel circuit of contact point S1 diode D1 half 23T' body Q.
〃The load "1" continues to light up stably.Also, the above @3
The role of the capacitor C' in the circuit is not only to act as a charging station, but also to pass a sufficient preheating current to the charge ratio.
The duration of the pulse width is long when high voltage pulses are generated.
In addition, the arc generated when the contact S is turned off is erased to protect the contact and prevent radio noise. Further, after the load FL is turned on, high frequency noise generated from the load Fl itself is prevented 1F. In addition, the rectifying element also eliminates the arc spark of the connected rj:j S, like the capacitor (-).
When L is to be lit, it is lit by the generation of a high voltage pulse of IC) and 1.

Even at the final stage of blockage, it was possible to turn on the lamp with at least one to several high-voltage pulses. Moreover, even in the low state, the front hole and the contact point S are sensitive to the ambient temperature, so a stable high voltage pulse is generated.

/J Oh, it is a literary theory that even if the circuit shown in FIG. 4 is operated using the contact point S' shown in FIG. 2, the light will turn on in the same way.

FIG. 5 is a circuit diagram showing a second applied embodiment of the present invention, and the explanation of the same symbols shown in FIGS. 1 and 4 mentioned above will be omitted. In the figure, LP beam is a cage coil, Ll is a boosting coil of the leakage coil, L2 is a stabilizing coil of the leakage coil, and the circuit between R, and N is a series circuit passing through the boosting coil L1, the stabilizing coil 2, and the load FL. The circuit consists of a contact S and a rectifier element connected in parallel between both terminals of the secondary sides of cathodes f+ and f2 of the load Fl, two semiconductors Q connected in series, and a contact S.
A discharge electrode is connected to the cathode f2 side via a resistor.

In addition, a capacitor C' is connected in parallel with the load ratio at the midpoint between the stabilizing coil L2 and the cathode f1 and the midpoint between the negative ifa and the semi-p integral Q.
g, continued.

Next, to explain the circuit shown in Figure 5, the AC current @R,N
is AC100V, 5011z or 60Hz, the leakage coil LR is, for example, a leakage coil for FL-40W, and the boost secondary 'Fl! A linear inductor with a voltage of 200 V - and an inheedance drop voltage V+o of about 102 V, a load F[, is, for example, a PL-40W fluorescent lamp, and a contact S1, a rectifier D1, a semiconductor Q1, a resistor Ro, and a capacitor C' are shown in Fig. 4. It is composed of the same components as the first applied example. The 51st threshold circuit differs from the circuit in Figure 4 in that it has a step-up coil L1 in the inductor, and the VBO is expanded to 17 by using two 1ζQs and connecting them in series. In addition, the secondary side voltage is boosted and the doubler FEB is used.For example, when using an AC power supply of 200V, 50Hz or 60Hz, the semiconductor Q circuit uses 160 to 300V, so the circuit shown in Figure 4 The configuration is the same for all <1h], and does not limit the present invention in any way.

Next, to explain the electrical operation in Fig. 5, R, N
The voltage on the secondary side is boosted to a double voltage by the boost coil L1 of the single cage coil Lp to which the cross current fU fJ m is applied. Due to the boosted voltage, a voltage is generated across the two ends of the semiconductor Q by an electric path passing through the parallel circuit of the electric field R side, the stabilizing coil L2, the cathode f+, the contact point S and the rectifier resistor, and the electric path passing through the power source N side and the cathode f2. When the voltage is applied, the two VHO-enlarged semiconductors Q are ignited and become low impedance. When the impedance of the semiconductor Q becomes low, the circuit is energized, and thereafter the cathodes f+, f2, and the contact point S are rapidly warmed up by the operation exactly the same as in the applied example of the fourth mouthpiece 1, and when the contact point S is opened, a high voltage is generated. While generating a pulse to turn on the load ratio, the semiconductor Q undergoes a high-speed blocking transition to a high impedance. The function of capacitor C' is also exactly the same as in the first applied embodiment.

Note that the 251st contact point S' is added to the applied circuit of FIG. 5 of the present invention.
It is a literature theory that high voltage pulses are generated in the same way when operated using a .

As described above, the present invention has a remarkable effect on high-voltage pulse generation circuits in particular, and also has many advantages such as responsive operation to ambient temperature and load, extended load life, and high speed inhibition of semiconductors. It is also an extremely useful invention that can provide various application circuits with a simple and inexpensive 111η circuit.

[Brief explanation of the drawing]

14 and 2 are equivalent circuit diagrams showing one embodiment of the present invention, and FIG. 3 is a second circuit diagram showing one embodiment of the present invention.
．． It is a circuit diagram for r. R, N... AC electric gap fl, f2.
...Cathode (filament) L ...Inductor CI ...Capacitor Q
...Half fN',! y switch element Lρ
...Leakage coil s, s'...Contact switch Yes...Boost coil ASB
...Middle point [,2... Stable coil ... Load RO
...Resistance, A ... Heating element 1.6 ... Bimetal 2 ...
...Thermal bond 3 ...Glass bulb 5
...Fixed pole) (b) Hiro 11th side CC) Connection 21st (a ><b> 314th D C' α f+ I"L S

Claims (2)

[Claims] (1) A high-voltage pulse generation circuit comprising a contact switch and a semiconductor switching element in parallel with a square load, and operating the contact switch by heat dissipation. (2) The scope of the wartime claims includes connecting a diode in parallel to the wartime contact switch.