JPS5960844A - Ion source device - Google Patents
Ion source deviceInfo
- Publication number
- JPS5960844A JPS5960844A JP57168537A JP16853782A JPS5960844A JP S5960844 A JPS5960844 A JP S5960844A JP 57168537 A JP57168537 A JP 57168537A JP 16853782 A JP16853782 A JP 16853782A JP S5960844 A JPS5960844 A JP S5960844A
- Authority
- JP
- Japan
- Prior art keywords
- main discharge
- discharge chamber
- thermal cathode
- discharge room
- hot cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005192 partition Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はガス放電によってプラズマを生成し、該プラズ
マかつイオンを引出し加速するイオン源装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an ion source device that generates plasma by gas discharge, extracts and accelerates the plasma and ions.
従来のイオン源装置は、その陰極として加熱したフィラ
メントから直接イオンを引き出していたためその寿命が
短かく保守などの血判なものであつた。これを解決する
ために、本願発明者の発明したイオンビームを引出すた
めのプラズマを生成する主放電室と該主放電室から仕切
られた副放電室から成り、該主放電室と副放電室の仕切
り用隔壁の全部又は一部が該主放電室の熱陰極の役割を
果し、該副放電室内にあって該熱陰極を放電又は電子衝
撃で加熱するために設けられた補助電極を有するイオン
源では、該熱陰極を支持する構造物が、従来よりイオン
源の熱陰極として用いられて来たタングステンフィラメ
ントを支持する場合に比べて大きくなって、不経済であ
りしかもイオン源の装置全体が大型化する。又、副放電
室をイオン源に取付けると、少なくともその取付は面積
の部分をカスプ磁場でおおうことが出来ず、プラズマ中
のイオンの損失が増大するので、熱陰極を含む副放電室
は、出来る限りコンパクトにすべきである。さら匿熱陰
極体の全表面積に対する副放電室側の面積の比は、副放
電室内に入る放射熱を低減するために出来る限り小さく
した方が良い。Conventional ion source devices directly extract ions from a heated filament as a cathode, and therefore have a short lifespan and require maintenance. In order to solve this problem, the present inventor invented a system consisting of a main discharge chamber that generates plasma for extracting the ion beam, and a sub-discharge chamber separated from the main discharge chamber. All or part of the partition wall serves as a hot cathode of the main discharge chamber, and an ion having an auxiliary electrode provided in the sub-discharge chamber to heat the hot cathode by discharge or electron impact. In the source, the structure supporting the hot cathode is larger than the structure supporting the tungsten filament that has been conventionally used as the hot cathode of the ion source, making it uneconomical and making the entire ion source device larger. Become larger. Furthermore, if the sub-discharge chamber is attached to the ion source, at least that area cannot be covered with a cusp magnetic field, increasing the loss of ions in the plasma. It should be made as compact as possible. Furthermore, the ratio of the area on the sub-discharge chamber side to the total surface area of the heat shielding cathode body is preferably made as small as possible in order to reduce radiant heat entering the sub-discharge chamber.
この発明は、上述した従来装置の欠点を改良したもので
、必要とされる主放電室側の熱陰極面積を確保した上で
該熱陰極のサイズをより小さくすることを目的とする。The present invention improves the drawbacks of the conventional device described above, and aims to further reduce the size of the hot cathode while securing the required area of the hot cathode on the main discharge chamber side.
本発明のイオン源装置は、前記熱陰極の前記主放電側の
面に凹凸をつけることにより、熱電子放出面積を凹凸が
ない場合に比べて増大させるものである。In the ion source device of the present invention, by providing unevenness on the main discharge side surface of the hot cathode, the thermionic emission area is increased compared to a case without unevenness.
本発明によれば熱陰極体のサイズを主放電室側の熱陰極
面積を変えることなく小さく出来るので、これを支持す
る構造物、副放電室、副放電室内に入る放射熱熱陰極を
加熱するための電力をすべて小さく出来る。According to the present invention, the size of the hot cathode body can be reduced without changing the area of the hot cathode on the main discharge chamber side, so that the structure that supports it, the sub-discharge chamber, and the radiant heat cathode that enters the sub-discharge chamber are heated. All the power required for this can be reduced.
本発明の一実施例を第1図に示す。イオン源の主放電室
4は、放電陽極壁1、イオンビームを引出すグリッド電
極3と、熱陰極5を含む副放電室隔壁からなる。放電陽
極壁にはプラズマの閉込めを改善するための永久磁石2
を取付けてもよい。An embodiment of the present invention is shown in FIG. The main discharge chamber 4 of the ion source consists of a discharge anode wall 1, a grid electrode 3 for extracting the ion beam, and a sub-discharge chamber partition wall containing a hot cathode 5. A permanent magnet 2 is installed on the discharge anode wall to improve plasma confinement.
may be installed.
副放電室8は熱陰極5を含む隔壁、補助電極6、及びタ
ングステンフィラメント7から成り、真空又は低気圧ガ
スで満される。熱陰極5の主放電室4側の面には凹凸が
つけられている。この凹凸の程度を表わす代表的な長さ
が、主放電室内に生成されるプラズマ中の電子の温度と
密度で定まるデバイ長より充分大きければ、熱陰極面に
つけた凹凸によってその実効的な面積は増大する。先ず
、加熱すれたタングステンフィラメント7から放出され
た電子で補助電極6をその所定温度まで加熱する。次に
、熱陰極5と補助電極6との間に加熱電源101こよっ
て交流又は直流又は反流と直流が重畳された電圧を印加
して熱陰極5を電子衝撃によって加熱した後、熱陰極5
と補助電極6の温度を所定値に継持することが出来る様
になればタングステンフィラメント7と補助電極6との
間の電源を切離す、こうして、熱陰極より放出される電
子によって主放電室内のガスを電離させアーク放電を行
う。The sub-discharge chamber 8 consists of a partition including a hot cathode 5, an auxiliary electrode 6, and a tungsten filament 7, and is filled with vacuum or low-pressure gas. The surface of the hot cathode 5 on the main discharge chamber 4 side is uneven. If the typical length representing the degree of this unevenness is sufficiently larger than the Debye length, which is determined by the temperature and density of electrons in the plasma generated in the main discharge chamber, the effective area of the unevenness on the hot cathode surface can be increase First, the auxiliary electrode 6 is heated to its predetermined temperature by electrons emitted from the heated tungsten filament 7. Next, the hot cathode 5 is heated by electron impact by applying a voltage of alternating current, direct current, or a superimposed countercurrent and direct current using the heating power source 101 between the hot cathode 5 and the auxiliary electrode 6.
When the temperature of the tungsten filament 7 and the auxiliary electrode 6 can be maintained at a predetermined value, the power supply between the tungsten filament 7 and the auxiliary electrode 6 is disconnected. Ionizes the gas and creates an arc discharge.
第1図において、熱陰極5、補助電極6は要求が満され
る限り、どの様な祠料、形状、構造であってもよい。又
、この様な副放電室は1個又は複数個でおってもよく、
その設置場所も任意である。In FIG. 1, the hot cathode 5 and the auxiliary electrode 6 may have any abrasive material, shape, and structure as long as the requirements are met. Also, there may be one or more sub-discharge chambers,
The installation location is also arbitrary.
さらに熱陰極につけた凹凸形状も任意である。Furthermore, the uneven shape formed on the hot cathode is also arbitrary.
第1図は本発明装置の断面図でおる。 1・・・放電陽極壁、 2・・・永久磁石、 3・・・引出し電極、 4・・・主放電室、 5・・・熱 陰 極、 6・・・補助電極、 7・・・タングステンフィラメント、 8・・・副放電室、 9・・・絶 縁 材、 10・・・加熱電源。 FIG. 1 is a sectional view of the device of the present invention. 1...discharge anode wall, 2...Permanent magnet, 3... Extraction electrode, 4... Main discharge chamber, 5...Heat, negative pole, 6... Auxiliary electrode, 7...Tungsten filament, 8... Sub-discharge chamber, 9... Insulation material, 10...Heating power supply.
Claims (1)
と、該主放電室から仕切られた副放電室から成り該主放
電室と副放電室との仕切り用隔壁の一部又は全部が主放
電室の塊状の熱陰極の役割をし、該副放電室内にあって
該熱陰極を放電又は電子衝撃で加熱するために設けられ
た補助電極を有するイオン源において、熱陰極の主放電
側の面に凹凸をつけたことを特徴とするイオン源装置。It consists of a main discharge chamber that generates plasma from which the ion beam is extracted, and a sub-discharge chamber that is partitioned from the main discharge chamber, and a part or all of the partition wall between the main discharge chamber and the sub-discharge chamber serves as the main discharge chamber. In an ion source that has an auxiliary electrode that serves as a lumpy hot cathode and is located in the sub-discharge chamber and is provided to heat the hot cathode by electric discharge or electron impact, the main discharge side surface of the hot cathode is An ion source device characterized by having unevenness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57168537A JPS5960844A (en) | 1982-09-29 | 1982-09-29 | Ion source device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57168537A JPS5960844A (en) | 1982-09-29 | 1982-09-29 | Ion source device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5960844A true JPS5960844A (en) | 1984-04-06 |
Family
ID=15869852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57168537A Pending JPS5960844A (en) | 1982-09-29 | 1982-09-29 | Ion source device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5960844A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4984271A (en) * | 1987-05-11 | 1991-01-08 | Hitachi, Ltd. | Cipher system with closed cipher procedure |
-
1982
- 1982-09-29 JP JP57168537A patent/JPS5960844A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4984271A (en) * | 1987-05-11 | 1991-01-08 | Hitachi, Ltd. | Cipher system with closed cipher procedure |
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