JPS596002B2 - Sankabutsuyudenzairiyou - Google Patents
SankabutsuyudenzairiyouInfo
- Publication number
- JPS596002B2 JPS596002B2 JP50158849A JP15884975A JPS596002B2 JP S596002 B2 JPS596002 B2 JP S596002B2 JP 50158849 A JP50158849 A JP 50158849A JP 15884975 A JP15884975 A JP 15884975A JP S596002 B2 JPS596002 B2 JP S596002B2
- Authority
- JP
- Japan
- Prior art keywords
- value
- composition
- dielectric
- dielectric constant
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【発明の詳細な説明】
本発明は、La、Ti、S、に、Zn、Nbの成分で構
成され、誘電率温度係数が−700〜+700pμm/
Cの範囲にある温度補償用酸化物誘電材料に関するもの
である。Detailed Description of the Invention The present invention is composed of La, Ti, S, Zn, and Nb, and has a dielectric constant temperature coefficient of -700 to +700 pμm/
The present invention relates to an oxide dielectric material for temperature compensation in the range of C.
本発明の目的は誘電率εが40以上で誘電体損失(ta
nδ)が小さくかつ誘電率温度係数(εT。The purpose of the present invention is to provide a dielectric loss (ta) when the dielectric constant ε is 40 or more.
nδ) is small and the temperature coefficient of dielectric constant (εT) is small.
にと記す)の値を制御可能なマイクロ波誘電材料、コン
デンサ材料に適した組成物を提供することである。マイ
クロ波領域において誘電材料は従来からマイクロ波回路
のインピーダンスの整合、誘電体共振器等に応用されて
いる。It is an object of the present invention to provide a composition suitable for a microwave dielectric material and a capacitor material, which can control the value of . In the microwave region, dielectric materials have been conventionally applied to impedance matching of microwave circuits, dielectric resonators, etc.
特に近来通信網の増加に伴い使用周波数領域も低域ある
いは準ミリ波、ミリ波領域と広がク、マイクロ波IC化
の要請とともにその技術が進歩し発振器の周波数の安定
化、遅延時間の制御およびマイクロ波回路用IC基板等
に高誘電率低損失の誘電材料を使つた小型化の検討が積
極的に進められている。従来の一般的な誘電材料として
はBaO一TiO2系のものが知られているが、負の誘
電率温度係数で大きい値を示し、任意の正負値に制御す
るのは困難であつた。In particular, with the recent increase in communication networks, the frequency range used has expanded to the low range, sub-millimeter wave, and millimeter wave ranges, and with the demand for microwave ICs, the technology has advanced, stabilizing the oscillator frequency and controlling the delay time. Furthermore, studies are actively underway to miniaturize IC substrates for microwave circuits and the like by using dielectric materials with high dielectric constant and low loss. BaO-TiO2-based dielectric materials are known as conventional general dielectric materials, but they exhibit a large negative temperature coefficient of dielectric constant, and it has been difficult to control the dielectric constant to any positive or negative value.
また、アルミナ焼結体やMgTiO3、CaTi03系
等は正のεT、には得られるが、誘電率が低かつたわ誘
電損失が大きい欠点がある。本発明はこれらの欠点を除
いたものであわ、新たにLa、Ti、Bに、Nb、Zn
で構成される酸化物誘電体組成物においてx(La2T
i207)y(Sr2Nb207)2(Zn2Nb20
7)の組成物を合成すると優れたマイクロ波誘電材料、
コンデンサ材料になることを見い出したものである。Furthermore, alumina sintered bodies, MgTiO3, CaTi03, etc. can be used to obtain positive εT, but they have the drawbacks of low dielectric constant and large dielectric loss. The present invention eliminates these drawbacks and newly adds La, Ti, B, Nb, and Zn.
In an oxide dielectric composition composed of x(La2T
i207)y(Sr2Nb207)2(Zn2Nb20
7) An excellent microwave dielectric material can be obtained by synthesizing the composition of
It was discovered that it can be used as a material for capacitors.
ここで、本発明はx(La2Ti207)y(Sr2N
b207)Z(Zn2Nb207)であられされる組成
物においてXの値が0≦X<1.0|yの値が0≦y≦
0.6、zの値が0<z≦0.3を満足する組成範囲内
であることを特徴とするものである。Here, the present invention provides x(La2Ti207)y(Sr2N
b207) In the composition coated with Z (Zn2Nb207), the value of X is 0≦X<1.0 | the value of y is 0≦y≦
0.6, and the value of z is within a composition range satisfying 0<z≦0.3.
試料はx(La2Ti207)y(Sr2Nb207)
Z(Zn2Nb207)の組成でLa203、TiO2
、SrC03、ZnO、Nb2O5の原料を各組成に応
じて秤量し、ボールミルにて混合後1000℃−4hr
で仮焼し圧縮成型後1200℃〜1380℃で2時間空
′気中または酸素気流中で焼成を行なつて得られたもの
である。その後誘電率の常温測定を9GH2で温度係数
を1MH2で測定した。x(La2Ti207)y(5
に2Nb207)Z(Zn2Nb2〜の組成でXの値、
yの値、zの値を変えたときの、各特性を第1表に示す
。The sample is x(La2Ti207)y(Sr2Nb207)
With the composition of Z (Zn2Nb207), La203, TiO2
, SrC03, ZnO, and Nb2O5 according to each composition, and mixed in a ball mill at 1000°C for 4 hours.
After calcination and compression molding, the material was calcined at 1200 DEG C. to 1380 DEG C. for 2 hours in air or in an oxygen stream. Thereafter, the dielectric constant was measured at room temperature at 9GH2 and the temperature coefficient was measured at 1MH2. x(La2Ti207)y(5
2Nb207) Z (value of X in the composition of Zn2Nb2~,
Table 1 shows each characteristic when the value of y and the value of z are changed.
第1表に示すごとく、La2Ti2O7/Sr2Nb2
O7/Zn2Nb2α◆の組成比を変えた場合、Sr2
Nb2Olすなわちyの値が多くなるにしたがい誘電率
の温度係数は小さくなジ、y一0.125〜0.15の
組成の間で、+45ppm/Cから−30ppm/℃
という小さな値を示す。As shown in Table 1, La2Ti2O7/Sr2Nb2
When the composition ratio of O7/Zn2Nb2α◆ is changed, Sr2
Nb2Ol, that is, as the value of y increases, the temperature coefficient of dielectric constant decreases. Between the composition of y-0.125 and 0.15, it ranges from +45 ppm/C to -30 ppm/°C.
This shows a small value.
特にx=0.765,y00.135,z=0.1の組
成では−2〜−4ppm/℃ という小さな値を示す。
さらにyの値が多くなると正から負のε をT−K
示し値は大きくなる傾向を示す。In particular, the composition of x=0.765, y00.135, and z=0.1 shows a small value of -2 to -4 ppm/°C.
Furthermore, as the value of y increases, T-K changes from positive to negative ε.
The indicated value shows a tendency to increase.
y〈0.6ではεT.Kが負に大きくなV1またTan
δ も大きくなり実用的に好ましくない。Z>0.3で
はX,yのどんな組合せの組成に訃いてもεが30以下
となり本発明から除外される。以上のごとくX,y訃よ
びzの値を適宜に選ぶことで任意に正,負のεT.Kの
値を得ることが可能である。When y〈0.6, εT. V1 or Tan where K is negatively large
δ also becomes large, which is not practical. When Z>0.3, ε becomes 30 or less regardless of the composition of any combination of X and y, and is excluded from the present invention. As described above, by appropriately selecting the values of X, y, and z, positive or negative εT. It is possible to obtain the value of K.
一方焼成温度も1220℃〜1380℃と比較的低温度
で焼結体を得ることができ経済的である。このように本
発明の組成物は誘電率が30以上で誘電体損失が小さく
、かつ誘電率の温度係数が小さく、また正、負の任意の
値を得ることができる優れた材料であることがわかる。On the other hand, the sintered body can be obtained at a relatively low firing temperature of 1220°C to 1380°C, which is economical. As described above, the composition of the present invention has a dielectric constant of 30 or more, low dielectric loss, and a small temperature coefficient of dielectric constant, and is an excellent material that can obtain any positive or negative value. Recognize.
Claims (1)
2O_7)z(Zn_2Nb_2O_7)であらわされ
る組成物(ただしx+y+z=1)においてXの値が0
≦x<1.0、yの値が0≦y≦0.6、zの値が0<
z≦0.3の条件を満す範囲で作られる組成をもつこと
を特徴とする酸化物誘電材料。1 x(La_2Ti_2O_7)y(Sr_2Nb_
2O_7)z(Zn_2Nb_2O_7) (where x+y+z=1), the value of X is 0
≦x<1.0, y value is 0≦y≦0.6, z value is 0<
An oxide dielectric material characterized by having a composition that satisfies the condition of z≦0.3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50158849A JPS596002B2 (en) | 1975-12-26 | 1975-12-26 | Sankabutsuyudenzairiyou |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50158849A JPS596002B2 (en) | 1975-12-26 | 1975-12-26 | Sankabutsuyudenzairiyou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5280498A JPS5280498A (en) | 1977-07-06 |
JPS596002B2 true JPS596002B2 (en) | 1984-02-08 |
Family
ID=15680739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50158849A Expired JPS596002B2 (en) | 1975-12-26 | 1975-12-26 | Sankabutsuyudenzairiyou |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS596002B2 (en) |
-
1975
- 1975-12-26 JP JP50158849A patent/JPS596002B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5280498A (en) | 1977-07-06 |
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