JPS595746A - Coil driving circuit - Google Patents

Coil driving circuit

Info

Publication number
JPS595746A
JPS595746A JP11503482A JP11503482A JPS595746A JP S595746 A JPS595746 A JP S595746A JP 11503482 A JP11503482 A JP 11503482A JP 11503482 A JP11503482 A JP 11503482A JP S595746 A JPS595746 A JP S595746A
Authority
JP
Japan
Prior art keywords
transistor
zener diode
state
voltage
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11503482A
Other languages
Japanese (ja)
Inventor
Kenji Kano
賢次 加納
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11503482A priority Critical patent/JPS595746A/en
Publication of JPS595746A publication Critical patent/JPS595746A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads

Abstract

PURPOSE:To obtain easily a small-sized, compact integrated structure, by connecting a Zener diode between the base and collector of a transistor (TR). CONSTITUTION:When the base-emitter voltage of the TR1 is VBE, the collector voltage of the TR1 is limited to VZ+VBE(VZ: breakdown voltage of Zener diode). Then, when the impedance of a signal source connected to the input of the TR1 is sufficiently high while an input signal is in a low level state, the current flowing through the TR1 is nearly VCC/R (where VCC is a power supply voltage and R is the resistance of coil) at the moment the TR1 is transfered from turned on state to off state. Further, the current flowing through the Zener diode 31 is VCC/hFE.R, where hFE is the common emitter current amplification factor of the TR1. Consequently, the current flowing through the Zener diode 31 is reduced to extremely small, so a small-sized element is usable.

Description

【発明の詳細な説明】 この発明は、出力トランジスタがON状態からOFF状
態に急激に変化した時、コイルの逆起電力によって上記
出力トランジスタが破壊するのを防止する機能をもった
コイル駆動回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a coil drive circuit having a function of preventing the output transistor from being destroyed by the back electromotive force of the coil when the output transistor suddenly changes from an ON state to an OFF state. It is something.

第1図および、第2図に従来のこの種駆動回路の異なる
例を示す、同図において、(l)はトランジスタで、ペ
ースを入力信号印加端子Pに接続しである。(2)は電
源(3)と上記トランジスタ(りのコレクタとの間に接
続されたコイ/&%(4)はコイfi/(2)に並列に
接続されたダイオードで、第2図のものではこのダイオ
ードに代ってトランジスタ(1)のコレクタ・工電ツタ
間にツェナーダイオードが接続されている。
FIG. 1 and FIG. 2 show different examples of conventional drive circuits of this type. In the figures, (l) is a transistor, and the pace is connected to the input signal application terminal P. (2) is a coil connected between the power supply (3) and the collector of the transistor (ri); In this case, instead of this diode, a Zener diode is connected between the collector of the transistor (1) and the power plant.

上記構成において、仮にダイオード(4)やツェナーダ
イオード(5)がないならば、トランジスタ(1)がO
N状態からOFF状態に遷移した時、コイ/I/(2)
の逆起電力により、トランジスタ(1)のコレクタに過
大な電圧が印加されるため、このトランジスタ(1)の
破壊を招く。
In the above configuration, if there were no diode (4) or Zener diode (5), the transistor (1) would be
When transitioning from N state to OFF state, Koi/I/(2)
An excessive voltage is applied to the collector of the transistor (1) due to the back electromotive force, leading to destruction of the transistor (1).

第1図のダイオード(4)や第2図のツェナーダイオー
ド(6)はこれを防止するためのものである。
The diode (4) in FIG. 1 and the Zener diode (6) in FIG. 2 are for preventing this.

つtb、いま電源電圧をVco 、ダイオード(4)の
順方向電圧降下をη、ツェナーダイオードのブレークダ
ウン電圧をVz (Vz )Woo )とすると、第1
図の構成では、トランジスタ(1)がONからOFFに
なった時、そのコレクタKかかる電圧はVOO+Vfに
制限される。
tb, now the power supply voltage is Vco, the forward voltage drop of the diode (4) is η, and the breakdown voltage of the Zener diode is Vz (Vz)Woo), then the first
In the configuration shown, when the transistor (1) turns from ON to OFF, the voltage applied to its collector K is limited to VOO+Vf.

また、第2図の構成では、トランジスタ(1)がONか
らOFFになった時、そのコレクタにかかる電圧はVz
に制限される。
Furthermore, in the configuration shown in FIG. 2, when the transistor (1) turns from ON to OFF, the voltage applied to its collector is Vz
limited to.

コイy(2)は、トランジスタ(1)がON状態からO
FF状態になった瞬間、いtまでの電流を保持しようと
する働きがあるため、コイpy (りの抵抗をRとする
と、Vcc/Rの電流がダイオード(4)もしくはツェ
ナーダイオード(6)に流れる。
Carp y (2) changes from the ON state of transistor (1) to O
The moment the FF state is entered, there is a function to hold the current up to t, so if the resistance of the coil py is R, the current of Vcc/R flows into the diode (4) or Zener diode (6). flows.

コイ/I/(2)として、たとえばリレーの駆動コイル
を考えたとき、100mA以上の電流を流すことが多い
。集積回路構造で最小サイズの素子に流し得る電流値は
せいぜい数鮎どtシであるため、上記第1図、および第
2図の回路においては、トランジスタ(1)として大容
量のものが必要となるのみならず、ダイオード(4)も
しくはツェナーダイオード(5)も大きなサイズの4の
を用いなければならず、集積構造での小型コンパクト化
の障害となる。
For example, when considering a drive coil for a relay, a current of 100 mA or more is often passed through the coil /I/ (2). Since the amount of current that can flow through the smallest element in an integrated circuit structure is at most a few ounces, the circuits shown in Figures 1 and 2 above require a large capacity transistor (1). Not only this, but also a large diode (4) or Zener diode (5) must be used, which becomes an obstacle to miniaturization in an integrated structure.

この発明は上記従来のものの欠点を除去するためになさ
れたもので、トランジスタのベース・コレクタ間にツェ
ナーダイオードを接続することによシ、集積構造の小型
コンパクト化を容易に推進し得るコイル駆動回路を提供
することを目的としている。
This invention was made in order to eliminate the drawbacks of the above-mentioned conventional ones, and by connecting a Zener diode between the base and collector of a transistor, a coil drive circuit that can easily promote miniaturization of the integrated structure. is intended to provide.

以下、この発明の一実施例を図面にしたがって説明する
An embodiment of the present invention will be described below with reference to the drawings.

第3図はこの発明に係るコイル駆動回路の一例を示すも
ので、第1図と同一部所には同一符号を付して説明を省
略する。
FIG. 3 shows an example of a coil drive circuit according to the present invention, and the same parts as in FIG.

同図に訃いて、(ロ)はツェナーダイオードで、このツ
ェナーダイオード01のアノードがトランジスタ(1)
のベースに、カソードが上記トランジスタ(1)のコレ
クタに接続されている。
In the same figure, (b) is a Zener diode, and the anode of this Zener diode 01 is a transistor (1).
The base of the transistor (1) has its cathode connected to the collector of the transistor (1).

上記構成において、トランジスタ(1)のベース・エミ
ッタ間電圧をVBICとすると、トランジスタ(1)の
コレクタ電圧はVZ+VBKに制限される。そしてトラ
ンジスタ(1)の入力に接続される信号源のインピーダ
ンスが、入力信号が低レベル状態の時十分高いとすれば
、トランジスタ(1)がON状態からOFF状態になっ
た瞬間、トランジスタ(1)に流れる電流はほぼToo
 /R、となる。またツェナーダイオードに)に流れる
電流は、トランジスタ(1)のエミッタ接地電流増巾率
をhymとすれば、Vcc/hym 、 Rとなる。つ
まシツエナーダイオードGIIに流れる電流は極めて小
さくなシ、集積回路化した場合、最小サイズの素子を用
いることができる。
In the above configuration, when the base-emitter voltage of transistor (1) is VBIC, the collector voltage of transistor (1) is limited to VZ+VBK. If the impedance of the signal source connected to the input of transistor (1) is sufficiently high when the input signal is in a low level state, the moment transistor (1) changes from the ON state to the OFF state, the transistor (1) The current flowing in is almost Too
/R. Further, the current flowing through the Zener diode becomes Vcc/hym, R, where hym is the common emitter current amplification rate of the transistor (1). The current flowing through the energizer diode GII is extremely small, so when it is integrated into an integrated circuit, the smallest sized element can be used.

以上のように、この発明は出力トランジスタのベース・
コレクタ間にツェナーダイオードを接続することによシ
、上記トランジスタがON状態からOFF状態になった
際の上記トランジスタのコレクタ電圧を制限できること
は勿論のこと、集積構造における小型化を容易に推進す
ることができる効果がある。
As described above, the present invention provides a base for the output transistor.
By connecting a Zener diode between the collectors, it is possible not only to limit the collector voltage of the transistor when the transistor changes from an ON state to an OFF state, but also to easily promote miniaturization in an integrated structure. It has the effect of

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は従来のコイル駆動回路の異なる例
を示す電気回路図、第3図はこの発明に係るコイル駆動
回路の一例を示す電気回路図である。 (1)・−・トランジスタ、(2)・・・コイル、(3
)・・・電m、o])・・・ツェナーダイオード。 なお図中、同一符号は同一もしくは相当部分を示す。 第1図       第2図 第3図
1 and 2 are electric circuit diagrams showing different examples of conventional coil drive circuits, and FIG. 3 is an electric circuit diagram showing an example of a coil drive circuit according to the present invention. (1)...Transistor, (2)...Coil, (3
)...Electric m, o])... Zener diode. In the drawings, the same reference numerals indicate the same or corresponding parts. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] (1)、ペースに入力信号が印加されるトランジスタと
、このトランジスタのコレクタと電源との間に接続され
たコイルと、前記トランジスタのペースにアノードを、
コレクタにカソードをそれぞれ接続したツェナーダイオ
ードとを備えたコイル駆動回路。
(1) A transistor to which an input signal is applied to the pace, a coil connected between the collector of this transistor and a power supply, and an anode to the pace of the transistor,
A coil drive circuit equipped with Zener diodes whose collectors and cathodes are respectively connected.
JP11503482A 1982-06-30 1982-06-30 Coil driving circuit Pending JPS595746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11503482A JPS595746A (en) 1982-06-30 1982-06-30 Coil driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11503482A JPS595746A (en) 1982-06-30 1982-06-30 Coil driving circuit

Publications (1)

Publication Number Publication Date
JPS595746A true JPS595746A (en) 1984-01-12

Family

ID=14652566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11503482A Pending JPS595746A (en) 1982-06-30 1982-06-30 Coil driving circuit

Country Status (1)

Country Link
JP (1) JPS595746A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63159016U (en) * 1987-04-06 1988-10-18
JPS642815U (en) * 1987-06-22 1989-01-10
US5219512A (en) * 1988-10-13 1993-06-15 Seiki Corporation Improved pressure-holding chamber type injection molding process and apparatus for injection molding of products

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63159016U (en) * 1987-04-06 1988-10-18
JPS642815U (en) * 1987-06-22 1989-01-10
US5219512A (en) * 1988-10-13 1993-06-15 Seiki Corporation Improved pressure-holding chamber type injection molding process and apparatus for injection molding of products

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