JPS595731Y2 - High frequency ionization plating equipment - Google Patents

Description

[Detailed description of the invention] The present invention is a high-frequency ionization plate that ionizes evaporated particles using a high-frequency electric field such as radio frequency (RF), accelerates the ionized evaporated particles using a DC electric field, and deposits them on a substrate. TECHNICAL RELATED TECHNOLOGY

Conventional high frequency ionization plating equipment, for example,
As shown in the figure, reference numeral 1 denotes a vacuum housing in which a small amount of nitrogen gas or the like is sealed.Inside the vacuum housing 1, there is an evaporation source 2 for the adhered substance, and an evaporation source 2 is placed opposite the evaporation source 2. A substrate 3 to which the above-described substance is deposited, and a coil-shaped RF electrode 4 for ionizing vaporized particles of the deposited substance are arranged.

An RF power source 5 is provided to supply radio waves to the RF electrode 4. In order to effectively supply power from the RF power source to the RF coil 4, the RF electrode 4 and the RF power source 5 are connected to an impedance matching circuit 6. connected via.

The impedance matching circuit 6 includes first and second variable capacitors 7 and 8 and a coil 9.

10 is a DC power supply for maintaining the substrate 3 at a negative high potential, and 11 and 12 are insulators.

In such a structure, when the deposited material is evaporated from the evaporation source 2, the evaporated and particle-formed deposited material is ionized by the RF electric field created by the RF electrode 4 and becomes positive ions, and the substrate Accelerated towards 3.

The accelerated ion particles of the deposited material collide with the substrate 3 and are buried, forming a film of the deposited material on the surface of the substrate 3.

However, in the conventional device, since the RF electrode 4 is floating from the ground, electrons with high mobility are
The electrode 4 is supplemented and charged, and the RF electrode is charged with several 100 V.
A negative floating potential that reaches even

For this reason, some of the adhering material particles that have become cations are
Because it is attracted to the electrode 4, it does not fly toward the substrate 3, but instead collides with the RF electrode.

Therefore, not only is the propagation velocity of the deposited material layer formed on the surface of the substrate 3 insufficient, but also the deposited material particles, which have become cations due to the collision, are ionized by the material forming the RF electrode. Some of the sputtered particles also adhere to the substrate, resulting in undesirable contaminants in the layer of deposited material formed on the surface of the substrate.

The present invention has been made to solve the drawbacks of the conventional high frequency ionization plating apparatus, and one embodiment of the present invention will be described in detail below with reference to the drawings.

In FIG. 2, where the same numbers are assigned to the same structural elements as in FIG. 1, the difference from FIG. The other end is connected to the positive electrode of a DC power source 14, which is connected to ground.

With this configuration, since the inductance of the coil 13 is extremely large, the DC power source 14 is connected to the RF electrode 4 in a DC manner while remaining disconnected from the RF power source.

Therefore, the potential of the RF electrode 4 can be maintained at the positive potential provided by the power source 14 without any loss in function as a conventional high frequency ionization plating device.

Therefore, the positive ions of the particles of the deposited material evaporated from the evaporation source 2 and ionized by the RF electrode 4 are no longer attracted to the RF electrode due to the negative floating potential of the RF electrode, so that the deposited material particles on the substrate 3 are no longer attracted to the RF electrode due to the negative floating potential of the RF electrode. The deposition efficiency can be improved, and the layer of deposited material applied to the substrate 3 is free from undesirable contaminants.

FIG. 3 is a diagram for explaining an embodiment in which the impedance when looking at the RF electrode 4 from the RF power source 5 side is lower than the embodiment shown in FIG. Components that are the same as those in the figures are given the same numbers.

In FIG. 3, 15 and 16 are variable capacitance capacitors, and 17 is a coil, but in this embodiment, the coil is not only used for connecting the DC power source 14 to the RF electrode 4, but also for impedance matching. It also serves as an element involved in the matching conditions of the circuit 6, and its inductance is not large enough to completely isolate the DC power source 14 from the radio waves of the RF power source 5.
Capacitor 18 for radio frequency bypass to protect
is provided in parallel with the power supply 14.

Even with this configuration, the RF electrode 4 is connected to the power source 14 in a direct current manner and is maintained at a positive potential, so that the same effect as the embodiment shown in FIG. 3 can be obtained.

In the above embodiment, the RF electrode 4 is connected to the ground via the DC power supply 14, but it may be connected directly to the ground.

[Brief explanation of drawings]

FIG. 1 is a diagram for explaining a conventional device, FIG. 2 is a diagram for explaining one embodiment of the present invention, and FIG. 3 is a diagram for explaining another embodiment of the present invention. It is a diagram. 1: Vacuum housing, 2: Evaporation source, 3: Substrate, 4: RF electrode,
5: RF power supply, 6: Impedance matching circuit, 7, 8,
15, 16: Variable capacitor, 9, 13, 17:
Coil, 10, 14: DC power supply, 18: Bypass capacitor.

Claims (1)

[Scope of utility model registration request] A high frequency electrode disposed within a vacuum housing, a substrate disposed within the housing and onto which a substance to be deposited is deposited, means for evaporating the substance deposited on the substrate, and supplying high frequency waves to the high frequency electrode. and a matching circuit disposed between the power source and the high-frequency electrode, characterized in that the high-frequency electrode is connected to the ground or a power source that provides a positive potential via a coil. High frequency ionization plating equipment.