JPS595725A - Electrode structure of thin film of zinc oxide - Google Patents
Electrode structure of thin film of zinc oxideInfo
- Publication number
- JPS595725A JPS595725A JP57114450A JP11445082A JPS595725A JP S595725 A JPS595725 A JP S595725A JP 57114450 A JP57114450 A JP 57114450A JP 11445082 A JP11445082 A JP 11445082A JP S595725 A JPS595725 A JP S595725A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide film
- thin film
- electrode structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 abstract description 9
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 2
- 229910000942 Elinvar Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Die Bonding (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は安定な特性を示す酸化亜鉛薄膜の電極構造に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode structure of a zinc oxide thin film exhibiting stable characteristics.
酸化亜鉛＋１膜は弾性表面波装置、音叉振動子、音片振
動子などの圧電体として使用されている。Zinc oxide +1 film is used as a piezoelectric material in surface acoustic wave devices, tuning fork vibrators, vibrator vibrators, etc.
この酸化亜鉛薄膜の使用例を音叉振動子にもとづいて説
明する。An example of the use of this zinc oxide thin film will be explained based on a tuning fork vibrator.
第１図は音叉振動子の一例を示覆側面図である。FIG. 1 is a side view showing an example of a tuning fork vibrator.
図において、１は音叉振動子の本体、２．３はこの本体
１の脚部を示し、脚部２．３の側壁２ａ 。In the figure, 1 indicates the main body of the tuning fork vibrator, 2.3 indicates the leg portion of this main body 1, and side wall 2a of the leg portion 2.3.
３ａには酸化亜鉛薄膜４．５が形成されている。A zinc oxide thin film 4.5 is formed on 3a.
この酸化亜鉛薄ｌ１１４．５は真空蒸着法、スパッタリ
ング法、イオンブレーティング法などにより形成される
。６．７は酸化亜鉛薄Ｍ４．５の上に形成されたＡＩ／
、電極を示す。This zinc oxide thin layer 114.5 is formed by a vacuum evaporation method, a sputtering method, an ion blasting method, or the like. 6.7 is an AI formed on zinc oxide thin M4.5
, indicates the electrode.
このへβ電極６．７は安価でボンディングができること
から選ばれたもので、電子ビーム蒸着法などにより３０
００〜１００ＯＯＡの膜厚の範囲で形成される。This β electrode 6.7 was selected because it was cheap and could be bonded, and was made by electron beam evaporation method etc.
It is formed with a film thickness in the range of 00 to 100 OOA.
しかしながら、上記したような酸化亜鉛ＩＩ！の電極構
造では次のような欠点が見られる。つまり、Ａρ主電極
のものが高い親和性を示すため、酸化亜鉛薄膜中にＡＲ
Ｍ−拡散し、電気的特性が劣化するという欠点がある。However, zinc oxide II as mentioned above! This electrode structure has the following drawbacks. In other words, since the Aρ main electrode shows high affinity, AR in the zinc oxide thin film
There is a drawback that M-diffuses and electrical characteristics deteriorate.
すなわち、２価の半導体である酸化亜鉛に３価であるＡ
ｆＬが拡散することによって酸化亜鉛薄膜の電気的特性
、たとえば撮動周波数を大きく変化させるという現象が
認められた。また高温負荷寿命試験を行うと、さらに上
記した現象が促進され、電気的特性の劣化が一層大きな
ものとなった。In other words, zinc oxide, which is a divalent semiconductor, contains A, which is trivalent.
A phenomenon was observed in which the electrical properties of the zinc oxide thin film, such as the imaging frequency, were significantly changed due to the diffusion of fL. Furthermore, when a high-temperature load life test was conducted, the above-mentioned phenomenon was further accelerated, and the deterioration of the electrical characteristics became even more significant.
したがって、酸化亜鉛薄膜を形成するに当っては、電極
を含めた構成全体について考慮する必要があり、従来の
電極構成にさらに改良を施さなければならなかった。Therefore, when forming a zinc oxide thin film, it is necessary to consider the entire structure including the electrode, and it is necessary to further improve the conventional electrode structure.
この発明はかかる背景からなされたものであり、安定な
特性を示す酸化亜鉛薄膜の電極構造を提供することを目
的とする。The present invention was made against this background, and an object of the present invention is to provide an electrode structure of a zinc oxide thin film exhibiting stable characteristics.
以下この発明を実施例にもとづいて詳細に説明する。The present invention will be described in detail below based on examples.
第２図はこの発明にかかる酸化亜鉛薄膜の電極構造を音
叉振動子に適用した例を示す側面図である。FIG. 2 is a side view showing an example in which the zinc oxide thin film electrode structure according to the present invention is applied to a tuning fork vibrator.
１１はエリンバなどからなる金属音叉、１２は酸化亜鉛
薄膜、１３はＮｉ層、１４はＡρ電極である。このうち
Ｎ１層１３は電子ビーム法、スパッタリング法、イオン
ビーム法、抵抗加熱蒸着法などによって形成される。11 is a metal tuning fork made of Erimba or the like, 12 is a zinc oxide thin film, 13 is a Ni layer, and 14 is an Aρ electrode. Of these, the N1 layer 13 is formed by an electron beam method, a sputtering method, an ion beam method, a resistance heating vapor deposition method, or the like.
第３図は屈曲振動モードの音片振動子にこの発明にかか
る酸化亜鉛薄膜の電極構造を適用した例を示した斜視図
である。FIG. 3 is a perspective view showing an example in which the electrode structure of the zinc oxide thin film according to the present invention is applied to a sound element vibrator in a bending vibration mode.
図において、２１は振動子本体を示し、振動子２２とこ
れを支持部２４で支持している枠体２３から構成されて
いる。２５は酸化亜鉛薄膜で振動子２２の表面に形成さ
れている。２６は酸化亜鉛１膜２５の上に形成されたＮ
ｉ層、２７はＮｉ層２６の上に形成されたＡｆｆｉ電極
である。In the figure, reference numeral 21 indicates a vibrator body, which is composed of a vibrator 22 and a frame 23 that supports the vibrator 22 with a support portion 24. 25 is a zinc oxide thin film formed on the surface of the vibrator 22. 26 is N formed on the zinc oxide 1 film 25.
The i layer 27 is an Affi electrode formed on the Ni layer 26.
第４図は同じくこの発明を他の屈曲振動モードの振動子
に適用した例の側面図である。FIG. 4 is a side view of an example in which the present invention is applied to another bending vibration mode vibrator.
図において、３１はセラミクス、プラスチック、ゴムな
どの基板、この基板３１表面には、へρ電極３２、Ｎｉ
層３３、酸化亜鉛薄膜３４、Ｎ１層３５、およびＡρ電
極３６が順次形成されている。In the figure, 31 is a substrate made of ceramics, plastic, rubber, etc. On the surface of this substrate 31, a ρ electrode 32, Ni
A layer 33, a zinc oxide thin film 34, an N1 layer 35, and an Aρ electrode 36 are formed in this order.
第５図は同じくこの発明を拡がり振動モードの振動子に
適用した例を示す側面図である。FIG. 5 is a side view showing an example in which the present invention is applied to a vibrator in a spread vibration mode.
図において、４１は酸化亜鉛薄膜、４２は酸化亜鉛薄膜
４１の両面に形成されたＮｉ層、４３はＮ１層４２の上
に形成されたへ！電極である。In the figure, 41 is a zinc oxide thin film, 42 is a Ni layer formed on both sides of the zinc oxide thin film 41, and 43 is a layer formed on the N1 layer 42! It is an electrode.
第６図は同じくこの発明を厚み振動モードの振動子に適
用した例を示す側面図である。FIG. 6 is a side view showing an example in which the present invention is applied to a thickness vibration mode vibrator.
図において、５１は３ｉ、ＳｉＯ２などからなる基板、
基板５１の上にはＡｎ電極５２、Ｎ１層５３が順次形成
されている。さらにＮ１層５３の上には酸化亜鉛薄膜５
４が形成されている。この酸化亜鉛薄膜５４が形成され
ている位置に相当する基板５１には空部５１ａが形成さ
れている。酸化亜鉛薄膜５４の上にはＮ１層５５、およ
びＡＩ２電極５６が順次積層して形成されている。In the figure, 51 is a substrate made of 3i, SiO2, etc.
An An electrode 52 and an N1 layer 53 are sequentially formed on the substrate 51. Furthermore, a zinc oxide thin film 5 is provided on the N1 layer 53.
4 is formed. A cavity 51a is formed in the substrate 51 corresponding to the position where the zinc oxide thin film 54 is formed. On the zinc oxide thin film 54, an N1 layer 55 and an AI2 electrode 56 are sequentially laminated.
次に具体的な実施例として、第２図に示した音叉振動子
についてこの発明にかかる酸化亜鉛薄膜の電極構造を適
用した例を説明する。Next, as a specific example, an example in which the electrode structure of the zinc oxide thin film according to the present invention is applied to the tuning fork vibrator shown in FIG. 2 will be described.
第２図を参照して説明すれば、振動子１１の上にスパッ
タリング法により酸化亜鉛薄膜１２を形成し、その上に
Ｎ１を層１３を電子ビーム法により３５０Ａの厚みに形
成し、さらにその上に厚みが１μからなるＡＲ電極１４
を電子ビーム法により形成した。Referring to FIG. 2, a zinc oxide thin film 12 is formed on the vibrator 11 by sputtering, a layer 13 of N1 is formed on it to a thickness of 350A by an electron beam method, and then The AR electrode 14 has a thickness of 1μ.
was formed by an electron beam method.
このようにして振動周波数３２Ｋｌ−１２の振動子を作
成した。In this way, a vibrator with a vibration frequency of 32 Kl-12 was created.
この振動子に直流電圧２０Ｖを印加し、１２０℃の温度
に１００００時間放置した。このときの振動周波数の経
時変化特性を試料数２０個について測定したところ第７
図に示すような結果が得られた。図中実線はこの実施例
によるものである。また破線は従来例のＡｊ２電極のみ
からなるものについて、同様にして測定した結果を示し
たものである。この振動周波数の経時変化特性（ΔＦ／
Ｆｏ）は次式また、直列共振抵抗（Ｒｏ ）についても
同様に測定し、その結果を第８図にそれぞれ示した。A DC voltage of 20 V was applied to this vibrator, and the vibrator was left at a temperature of 120° C. for 10,000 hours. At this time, the temporal change characteristics of the vibration frequency were measured for 20 samples.
The results shown in the figure were obtained. The solid line in the figure is based on this embodiment. Moreover, the broken line shows the results of measurements made in the same manner for a conventional example consisting of only Aj2 electrodes. This vibration frequency change characteristic over time (ΔF/
Fo) is expressed by the following formula.The series resonant resistance (Ro) was also measured in the same manner, and the results are shown in FIG.
第７図〜第８図から明らかなように、この発明にかかる
ものは、従来例にくらべて、振動周波数の経時変化が小
さく、またＲｏの経時変化が小さくかつその値も小さい
などの効果が得られている。As is clear from FIGS. 7 and 8, the device according to the present invention has effects such as a smaller change in vibration frequency over time and a smaller change in Ro over time than the conventional example. It has been obtained.
ここで、Ｒｏを測定したのは次のような理由による。The reason why Ro was measured here is as follows.
まず、酸化亜鉛薄膜についてその等何回路を示せば第９
図のようになる。図中、ｃｄは並列容量を示し、酸化亜
鉛薄膜をコンデンサとして考えた場合の静電容量に近い
値である。Ｒｏは直列共振抵抗、Ｃｏは等儀容量、Ｌｏ
は等価インダクタンスである。First, how many circuits can be shown for the zinc oxide thin film?
It will look like the figure. In the figure, cd indicates parallel capacitance, which is a value close to the capacitance when a zinc oxide thin film is considered as a capacitor. Ro is series resonant resistance, Co is isometric capacitance, Lo
is the equivalent inductance.
Ｒｏは第１０図に示したインピーダンスと周波数の関係
から、直列共振周波数（ｆＯ〉に対応し、このＲｏが大
きくなれば発振に大きな増幅度が必要となり、発振条件
の低下をもたらすことになることが伺える。From the relationship between impedance and frequency shown in Figure 10, Ro corresponds to the series resonant frequency (fO), and if this Ro becomes large, a large degree of amplification is required for oscillation, resulting in a decrease in the oscillation conditions. I can see it.
第８図から明らかなように、この発明の実施例によれば
、従来例のへρ電極のものにくらべＲ。As is clear from FIG. 8, according to the embodiment of the present invention, R is lower than that of the conventional hep electrode.
の経時変化が小さく、このことからこの発明にかかる酸
化亜鉛薄膜の電極構造は安定な電気的特性を有するとと
もに、高温負荷寿命試験に対しても安定した特性を示す
ものであると理解することができ、安定した発振を期待
することができる。It can be understood that the zinc oxide thin film electrode structure according to the present invention has stable electrical characteristics and also exhibits stable characteristics even in high-temperature load life tests. stable oscillation can be expected.
以上この発明によれば、酸化亜鉛薄膜とへρ電極との間
に八ρの拡散防止層としてＮｉ層を介在させたものであ
り、従来のものにくらべて実用上十分な特性を示す酸化
亜鉛薄膜を提供することができる。特にこの発明によれ
ば、高温負荷寿命試験に対してＲｏの変化が小さく、周
波数変化が少ないなど信頼性の高い酸化亜鉛薄膜が得ら
れる。As described above, according to the present invention, a Ni layer is interposed between the zinc oxide thin film and the ρ electrode as a diffusion prevention layer of 8 ρ, and the zinc oxide film exhibits practically sufficient characteristics compared to conventional ones. A thin film can be provided. In particular, according to the present invention, a highly reliable zinc oxide thin film with small changes in Ro and small changes in frequency can be obtained in a high-temperature load life test.
第１図は音叉振動子の一例を示す側面図、第２図は音叉
振動子にこの発明にかかる酸化亜鉛薄膜の電極構造を適
用した例を示す側面図、第３図は音片振動子にこの発明
にかかる酸化亜鉛薄膜の電極構造を適用した例の斜視図
、第４図〜第６図は同じくこの発明にかかる酸化亜鉛薄
膜の電極構造を各振動子に適用した例の側面図、第７図
はこの発明の具体的実施例にもとづく振動周波数の経時
変化特性図、第８図は同じ＜Ｒｏの経時変化特性図、第
９図は酸化亜鉛薄膜の等両回略図、第１０図はインピー
ダンスと周波数の関係特性図である。
１１・・・・・・基板、１２・・・・・・酸化亜鉛簿膜
、１３・・・・・・Ｎｉ層、１４・・・・・・Ａ！電極
。
特 許 出 願 人
株式会社村田製作所
第４日
第５図
菊乙囮
第７ＴｉＪ
第８図Fig. 1 is a side view showing an example of a tuning fork vibrator, Fig. 2 is a side view showing an example in which the zinc oxide thin film electrode structure according to the present invention is applied to a tuning fork vibrator, and Fig. 3 is a side view showing an example of a tuning fork vibrator. FIGS. 4 to 6 are a perspective view of an example in which the zinc oxide thin film electrode structure according to the present invention is applied, and FIGS. 4 to 6 are side views and FIGS. Figure 7 is a diagram of the change in vibration frequency over time based on a specific embodiment of the present invention, Figure 8 is a diagram of the change in vibration frequency over time of the same <Ro, Figure 9 is a schematic diagram of the same cycle of a zinc oxide thin film, and Figure 10 is a diagram of the change in vibration frequency over time. FIG. 3 is a characteristic diagram showing the relationship between impedance and frequency. 11...Substrate, 12...Zinc oxide film, 13...Ni layer, 14...A! electrode. Patent application: Murata Manufacturing Co., Ltd., Day 4, Figure 5, Kikuotsu Decoy No. 7, TiJ, Figure 8
Claims (1)
たことを特徴とする酸化亜鉛薄膜の電極構造。An electrode structure of a zinc oxide thin film characterized in that a Ni layer is interposed between the surface of the zinc oxide thin film and the Aρ main electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114450A JPS595725A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
| US06/509,028 US4445066A (en) | 1982-06-30 | 1983-06-29 | Electrode structure for a zinc oxide thin film transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114450A JPS595725A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595725A true JPS595725A (en) | 1984-01-12 |
| JPH0115210B2 JPH0115210B2 (en) | 1989-03-16 |
Family
ID=14638031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57114450A Granted JPS595725A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595725A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7770275B2 (en) * | 2007-09-03 | 2010-08-10 | Nihon Dempa Kogyo Co., Ltd. | Methods for manufacturing tuning-fork type piezoelectric vibrating devices |
-
1982
- 1982-06-30 JP JP57114450A patent/JPS595725A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7770275B2 (en) * | 2007-09-03 | 2010-08-10 | Nihon Dempa Kogyo Co., Ltd. | Methods for manufacturing tuning-fork type piezoelectric vibrating devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0115210B2 (en) | 1989-03-16 |
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