JPS5954233A - Manufacture of hybrid integrated circuit - Google Patents

Abstract

PURPOSE:To solder a lead onto a thick-film circuit positively by forming the thick-film circuit on an insulating substrate, plasma-ashing a fouling and foreign- matter depositing layer generated on the circuit and the substrate and removing the ashed substances through ultrasonic washing using a washing liquid. CONSTITUTION:Conductor layers 2, 22, 32, 42 are formed on the insulating substrate 1 washed sufficiently through screen printing, a section extending over the end section of the layer 32 from the surface of the substrate 1 exposed from the layer 42 is coated with a resistance layer 3, and the layer 3 is coated with an insulating layer 4. Since the depositing layer 5 of fouling and foreign matters is generated to the surface, etc. of the substrate 1 from the layer 2 during a forming process for these layers at that time, a thick-film substrate 11 manufactured in this manner is ashed in plasma 9, and the depositing layer 5 is changed into a fragile depositing layer 10 which can be removed easily. The layer 10 is removed through ultrasonic washing using trichloroethylene, isopropyl alcohol, pure water, etc. Accordingly, the hybrid thick-film integrated circuit of high reliability is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a hybrid thick film integrated circuit, and more particularly to a method for manufacturing a hybrid thick film integrated circuit.
The present invention relates to a method for manufacturing a thick film substrate with excellent i properties.

Conventionally, as a method for manufacturing thick film substrates, a method of forming a desired thick film circuit on an insulating substrate by screen printing is widely known.

No. 11 is a cross-sectional view for explaining an example of a conventional thick film substrate manufacturing method.

A conductive layer 2.22. is formed on the insulating substrate 1 by screen printing.
32.42 (Fig. 1(a)). Next, a resistor 1 and 3 and then an insulating layer 4 are formed by screen printing (FIG. 1(1))').

However, in order to form the resistive layer 3 and the insulating layer 4 after forming the conductive layers 2.22, 32, and 42, for example, during the process of forming the resistive layer 3 and further the insulating layer 4 on the conductive layer 2-F. A deposited layer 5 of dirt, foreign matter, etc. is formed (
Figure 1 (C)). Note that FIG. 1(C) is an enlarged cross-sectional view of the vicinity of the conductor layer 2 in FIG. 1(b). Therefore, when the IJ-1 wire is attached to the conductor layer by wire honting, there is a drawback that the adhesive strength of the lead wire to the conductor layer deteriorates. Furthermore, when a thick film substrate is dipped in solder, there is a drawback that the adhesion of the solder to the conductor layer becomes poor.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a hybrid film integrated circuit which eliminates the above-mentioned drawbacks.

The features of the present invention include a step of forming a thick film circuit on an insulating substrate, a step of plasma ashing the thick film substrate, and
A method of manufacturing a hybrid integrated circuit includes at least a step of ultrasonically cleaning a membrane substrate.

Hereinafter, the present invention will be explained in detail with reference to Examples. Second
Figures (a) to 2(d) and 3 are cross-sectional views showing the steps of manufacturing a hybrid thick film integrated circuit according to the present invention. Similar to the conventional process for forming thick film substrates, conductor layers 2, 22, .
32.42. Subsequently, a resistive layer 3 and then an insulating layer 4 are formed (see Figure 2 (a)).

At this time, for example, a deposited layer 5 of dirt, foreign matter, etc. during the process of forming the resistance layer 3 and the insulating layer 4 is formed on the conductor layer 2 (FIG. 2(b)). In addition, Fig. 2 (I)) is similar to Fig. 2 (I)).
FIG. 3 is an enlarged cross-sectional view of the vicinity of the conductor layer 2 in a). Next, the formed thick film substrate 11 is subjected to ashing treatment in, for example, oxygen plasma 9 (FIG. 2(C)). At this time, for example, the nine laminated layers 5 of dirt, foreign matter, etc. on the conductor layer 2 become a deposited layer 10 of dirt, foreign matter, etc. in a brittle state that can be relatively easily removed by collision with oxygen plasma (see Fig. 2). (d)). Note that FIG. 2(d) is an enlarged cross-sectional view of the vicinity of the conductor layer 2 after the oxygen plasma ashing treatment. Next) λ-film substrate 11 is fi? (
-71 Nami L cleaning, brittle dirt, figurines, etc. accumulation layer 1
Remove 0 (Figure 3).

As a cleaning liquid, V↓ has a high exfoliating effect, such as OM i-? manufactured by Tokyo Ohka Kogyo ■. , Green Box 1 Liquid + 502, Trichlorethylene, Improvir Alcono, Pure Water, etc. are used alone or in combination. Figures 3 and 3 are enlarged cross-sectional views of the vicinity of the conductor layer 2 after ultrasonic cleaning.

As described above in the embodiments, according to the method of the present invention, the deposited layer of dirt, foreign matter, etc. that is formed on the conductor layer when forming a thick film substrate is subjected to plasma ashing treatment. Plasma collision can make the material brittle and light, and since ultrasonic cleaning is applied, the deposited layer of dirt, foreign matter, etc. is removed by the physical action of the ultrasound and the chemical action of the cleaning solution.

Therefore, when the lead wire is bonded to the 4th body layer by wire bonding, the surface of the mth body layer remains clean, so the adhesion strength of the lead wire to the conductor layer is improved as shown in Figure 4. Furthermore, when immersed in solder, the hang adhesiveness to the 27y free layer became good, making it possible to manufacture a hybrid thick film integrated circuit with excellent stability and reliability. That is, the fourth
In the figure, 100 is the case of a thick film substrate manufactured by the manufacturing method of the embodiment of the present invention, and 200 is the case of a thick film substrate manufactured by the manufacturing method of the prior art.

[Brief explanation of drawings]

1(a) to 1(C) are cross-sectional views for explaining the conventional method of manufacturing a hybrid thick film integrated circuit, and FIG.
) to FIG. 2(d) and FIG. 3 are cross-sectional views of the manufacturing process of a hybrid thick film integrated circuit for explaining the present invention in detail, and FIG.
The figure is a rough diagram comparing the adhesion strength of lead wires formed by wire bonding to a conductor layer on a membrane substrate formed by a conventional manufacturing method and a manufacturing method of the present invention. In the figure, 1...Insulating substrate, 2,22゜32.42...Conductor layer, 3...Resistance layer, 4...Insulating layer , 5...Deposition layer of dirt, foreign matter, etc., 9...Oxygen plasma, 10...
...Brittle dirt, foreign matter, etc. deposited U layer, 11...
... Thickness 1iiJ substrate, 100 ... 1, j, '5. according to the manufacturing method of the embodiment of the present invention. A) Adhesive strength of lead wire, 200...
In the conventional manufacturing method, the tangent strength of the wire is 10゜. 〃Mei/Figure/7' 3rd Saekaku 4th

Claims (1)

[Claims] A method for manufacturing a hybrid integrated circuit, comprising at least the steps of forming a thick film circuit on an insulating substrate, plasma ashing the thick film substrate, and ultrasonically cleaning the thick film substrate. .