JPS5952901A - Microstrip line circuit device - Google Patents

Microstrip line circuit device

Info

Publication number
JPS5952901A
JPS5952901A JP16370382A JP16370382A JPS5952901A JP S5952901 A JPS5952901 A JP S5952901A JP 16370382 A JP16370382 A JP 16370382A JP 16370382 A JP16370382 A JP 16370382A JP S5952901 A JPS5952901 A JP S5952901A
Authority
JP
Japan
Prior art keywords
wire
microstrip line
line
strip line
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16370382A
Other languages
Japanese (ja)
Inventor
Mitsuo Ohashi
大橋 光雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16370382A priority Critical patent/JPS5952901A/en
Publication of JPS5952901A publication Critical patent/JPS5952901A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08Microstrips; Strip lines
    • H01P3/081Microstriplines

Landscapes

  • Waveguides (AREA)

Abstract

PURPOSE:To use a titled device even in case of a large current, by wire-bonding an Au wire which is narrower than electric conductor width of a microstrip line, to its strip line having a characteristic of high impedance. CONSTITUTION:An Au wire 4 is wire-bonded onto a microstrip line 3 for the bias. When a DC resistance portion of the microstrip line 3 and DC resistance of the Au wire 4 are connected in parallel, the composite resistance becomes low, and a voltage drop in case when a current flows is reduced. As for a microwave signal, an electric field is not concentrated on the center of the strip line 3, but is concentrated in the dielectric substrate onto both ends and the reverse side of the strip line, therefore, even if the Au wire 4 is installed onto the center of the strip line 3, no influence is exerted on a microwave signal.

Description

【発明の詳細な説明】 この発明は大電流用に使用できるマイクロストリップ線
路回路装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microstrip line circuit device that can be used for large currents.

従来この柚のマイクロストリップ線路を用いた回路装置
には、第1図に示すものがあった。図において、(1)
は誘電体基板、(2)は誘電体基板(1)上に形成され
るマイクロ波斃合用ストリップ線路であり、(3)はバ
イアス用のマイクロストリップ線路である。
Conventionally, there has been a circuit device using this microstrip line as shown in FIG. In the figure, (1)
is a dielectric substrate, (2) is a microwave coupling strip line formed on the dielectric substrate (1), and (3) is a bias microstrip line.

第2図はバイアス用マイクロストリツ7゛線路附近の断
面拡大図であり、(3a)はバイアス用マイクロストリ
ップ線路(3)の導体幅で、(3b)は導体の厚みであ
る。
FIG. 2 is an enlarged cross-sectional view of the vicinity of the bias microstrip line (3), where (3a) is the conductor width of the bias microstrip line (3), and (3b) is the thickness of the conductor.

次に動作について説明する。誘電体基板(1)上でマイ
クロストリップ線路+21. +3)を使用するマイク
ロ波回路装置では、整合を行なう為に、−・イ・インピ
ータンスの特性をもつ細いマイクロストリップ線路を使
用する。特ζこ、バイアスを供給する為のマイクロスト
リップ線路(3)はマイクロ波信号に影胸〉を与えない
為、極力導体幅(3a)を細くしなければならない。即
ち、細い導体幅をもつマイクロストリップ線路でバイア
スを供給しなければならない。
Next, the operation will be explained. Microstrip line +21. on dielectric substrate (1). In a microwave circuit device using +3), a thin microstrip line having a characteristic of -I impedance is used for matching. Specifically, the conductor width (3a) of the microstrip line (3) for supplying bias must be made as thin as possible so as not to affect the microwave signal. That is, the bias must be supplied using a microstrip line with a narrow conductor width.

従来この押のストリップ線路には以上のようにマイクロ
ストリップ線路が形成されている為、必然的にバイアス
用マイクロストリップ線路の電流容L4が、バイアス用
マイクロストリップ線路(3)の導体幅(3a)と厚み
(3b)で決まる面積で決定され、電流を流しすぎると
マイクロストリップ線路(3)自体が焼ききれ断線する
か、又はマイクロストリツグ線路(3)自体の直流抵抗
が大きいことにより、電流を流すと電圧降下が大きくな
るなどの欠点かあつ ブこ。
Since the microstrip line is conventionally formed in this push strip line as described above, the current capacity L4 of the bias microstrip line is necessarily the same as the conductor width (3a) of the bias microstrip line (3). If too much current is passed, the microstrip line (3) itself will burn out and break, or the DC resistance of the microstrip line (3) itself is large, causing the current to There are drawbacks such as a large voltage drop when the current is applied.

この発明は上記のような従来のものの欠点を除去する為
になされたもので、バイアス用マイクロストリップ線路
又はその他の一イ・インピーダンスの特性をもつマイク
ロストリップ線路にそのストリップ線路の導体幅よりも
細いAuワイヤをストリップ線路上にワイヤホントする
ことにより、大電流でも使用可能なマイクロスト17ツ
グ線路回路装置を提供することを目的としている。
This invention was made in order to eliminate the drawbacks of the conventional ones as described above. The object of the present invention is to provide a microst 17 strip line circuit device that can be used even with large currents by wire-bonding an Au wire onto a strip line.

以下、この発明の一実施例を図について説明する。An embodiment of the present invention will be described below with reference to the drawings.

第3図は本発明の一実施例によるマイクロストリップ線
路の第2図相当断面図であり、5B 2図と同一符号は
同一のものを示す。そして(4)はバイアス用マイクロ
ストワッグ線PJf31上にワイヤボンドされた該線路
(3)の幅よりも細い4’Jl細のAaワイヤーCある
FIG. 3 is a sectional view corresponding to FIG. 2 of a microstrip line according to an embodiment of the present invention, and the same reference numerals as in FIG. 5B2 indicate the same parts. And (4) is a 4'Jl thin Aa wire C which is thinner than the width of the line (3) wire-bonded on the bias microstowag line PJf31.

次に動作について説明する。誘電体基板i1) J= 
iこ形成されたバイアス用マイクロストリップ線路(3
)は、導体幅(3a)と厚み引りとで面積が決定され、
バイアス電流容量が制限されてしまうので、Auワイヤ
(4)をバイアス用マイクロストリップ線路(3)」二
にワイヤボンドを行なう。このAuワイヤ(4)を施こ
した事により、Auワイヤ(4)がマイクロストリップ
線路(3)と並列となる為、 AHワイヤ(4)自体の
電流容−1itが元のマイクロス) l)ラグ線路(3
)の電流容量と加算され、又マイクロストリップ線路(
3)の直流抵抗分とAuワ5イヤ(4)の直流抵抗が並
列接続されることにより、合成抵抗が低くなり、電流が
流れた中心には電界が集中せず、ストリップ線路の両端
したところで、マイクロ波信号には影響がない。
Next, the operation will be explained. Dielectric substrate i1) J=
A bias microstrip line (3
), the area is determined by the conductor width (3a) and the thickness,
Since the bias current capacity is limited, the Au wire (4) is wire-bonded to the bias microstrip line (3). By applying this Au wire (4), the Au wire (4) becomes parallel to the microstrip line (3), so the current capacity of the AH wire (4) itself - 1it is the original microstrip line) Lag track (3
) is added to the current capacity of the microstrip line (
By connecting the DC resistance of 3) and the DC resistance of Au wire 5 wire (4) in parallel, the combined resistance is lowered, and the electric field is not concentrated at the center where the current flows, but at both ends of the strip line. , the microwave signal is not affected.

なお、上記実施例では、Auワイヤとしてストリップ線
路に比べると極細のものを1本使用しているが、マイク
ロ波信号に影響がなければ、ストリッツ線路中心上に数
木施こしてもよい。
In the above embodiment, one Au wire, which is extremely thin compared to the strip line, is used, but several pieces of Au wire may be placed over the center of the strip line as long as it does not affect the microwave signal.

以上のように、この発明によれは、紐(嘲マイク −ロ
ストリップ線路の中心ti仄訂ワイヤを施こしたので、
今まで、実現できなかった太電流容館に使用可能なスト
リング線路を得られる効果がある。
As described above, according to the present invention, since the wire is inserted at the center of the strip line,
This has the effect of making it possible to obtain string lines that can be used in large current capacity buildings, which has not been possible until now.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のマイクロストリップ線路回路装置を示す
図、第2図は第1図のマイクロストリップ線路回路装飾
、の断面拡大図、第3図はこの発明)−実Ma 例によ
るマイクロストリップ線路回路装置で第2図和尚の断面
拡大図である。 (1)・・・誘電体基板、(2)・・・マイクロ波整合
用ストリップ線路、(3)・・・バイアス用ストリップ
線路、(4)・・・Auワイヤ。 なム・口中1]−符号1.71句−71与不llp分奢
1云す。 代 理 人   葛  野  信  −2 第1図 第3図
Fig. 1 is a diagram showing a conventional microstrip line circuit device, Fig. 2 is an enlarged cross-sectional view of the microstrip line circuit decoration of Fig. 1, and Fig. 3 is a microstrip line circuit according to an actual example of the present invention. This is an enlarged cross-sectional view of the device shown in Figure 2. (1)... Dielectric substrate, (2)... Strip line for microwave matching, (3)... Strip line for bias, (4)... Au wire. nam・mouth 1] - sign 1.71 phrase - 71 give no lp 1 say. Agent Shin Kuzuno -2 Figure 1 Figure 3

Claims (1)

【特許請求の範囲】[Claims] (1)誘電体基板上に形成された−へイ・インピーダン
ス特性をもつ細いマイクロストリップ線路と。 このマイクロストリップ線路上にワイヤボンドされた該
ストリップ線路の幅よりも細いAuワイヤとを備えたこ
とを特徴とするマイクロストリップ線路回路装置。
(1) A thin microstrip line with -H impedance characteristics formed on a dielectric substrate. A microstrip line circuit device comprising: an Au wire that is thinner than the width of the strip line wire-bonded onto the microstrip line.
JP16370382A 1982-09-18 1982-09-18 Microstrip line circuit device Pending JPS5952901A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16370382A JPS5952901A (en) 1982-09-18 1982-09-18 Microstrip line circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16370382A JPS5952901A (en) 1982-09-18 1982-09-18 Microstrip line circuit device

Publications (1)

Publication Number Publication Date
JPS5952901A true JPS5952901A (en) 1984-03-27

Family

ID=15779011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16370382A Pending JPS5952901A (en) 1982-09-18 1982-09-18 Microstrip line circuit device

Country Status (1)

Country Link
JP (1) JPS5952901A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192902A (en) * 1990-11-27 1992-07-13 Nec Yamagata Ltd Hybrid integrated circuit device for high frequency
US5130402A (en) * 1988-07-01 1992-07-14 Sanyo Chemical Industries, Ltd. Coating composition and plastisol composition, and articles coated therewith
US5493263A (en) * 1991-07-19 1996-02-20 Fujitsu Limited Microstrip which is able to supply DC bias current

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130402A (en) * 1988-07-01 1992-07-14 Sanyo Chemical Industries, Ltd. Coating composition and plastisol composition, and articles coated therewith
JPH04192902A (en) * 1990-11-27 1992-07-13 Nec Yamagata Ltd Hybrid integrated circuit device for high frequency
US5493263A (en) * 1991-07-19 1996-02-20 Fujitsu Limited Microstrip which is able to supply DC bias current

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