JPS5940575A - Photo driven type semiconductor device - Google Patents
Photo driven type semiconductor deviceInfo
- Publication number
- JPS5940575A JPS5940575A JP57149995A JP14999582A JPS5940575A JP S5940575 A JPS5940575 A JP S5940575A JP 57149995 A JP57149995 A JP 57149995A JP 14999582 A JP14999582 A JP 14999582A JP S5940575 A JPS5940575 A JP S5940575A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light guide
- guide
- junction
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 229920001971 elastomer Polymers 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 230000004807 localization Effects 0.000 description 10
- 229920002379 silicone rubber Polymers 0.000 description 10
- 239000004945 silicone rubber Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 241000555745 Sciuridae Species 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 210000003097 mucus Anatomy 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は光駆動型半導体装置にかかり、特に高効率で
信頼性の高い光伝送方式の光駆動型半導体装置の構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a light-driven semiconductor device, and more particularly to a structure of a light-driven semiconductor device using a highly efficient and reliable optical transmission method.
近年、光トリガツイリスタなど、光信号を制御媒体とし
て光駆動を行なう光駆動型半導体装置が広く用いられる
ようになった。−例の光トリガサイリスタは第1図に示
す構造になっている。すなわち、図における(1)は光
駆動半導体チップ(以降チップと略称)で、その両主面
に形成されたカソード電極層(IC)、アノード電極層
(1a)に夫々圧接するカソード電極(2C)、アノー
ド電極(2a)でカソード、アノードを導出し、カソー
ド側主面のはff中央の光照射域(1g)に4Q号光を
印加することによってサイリスタがトリガされる。前記
信号光を印加するためのライトガイド(3)には光ファ
イバが用いられ、その1端面(3a)が光照射域(1g
)に対接するよう、このl端面に近いライトガイドの側
面の一部が接着剤(4)でチップに固着され、ついでラ
イトガイドは電4へ(2g)に沿ってチップの主面と平
行に外囲器側壁(5)に向けて設けられ、かつ、前記g
t11壁に貫装された管状体(6)の中を通って受光窓
(7)に他主面(3b)が対向する構造となっている。In recent years, optically driven semiconductor devices such as optically triggered twinristors that perform optical driving using optical signals as a control medium have become widely used. - An example optically triggered thyristor has the structure shown in FIG. That is, (1) in the figure is an optically driven semiconductor chip (hereinafter abbreviated as chip), which has a cathode electrode layer (IC) formed on both main surfaces thereof, and a cathode electrode (2C) that is in pressure contact with the anode electrode layer (1a), respectively. , the cathode and anode are led out by the anode electrode (2a), and the thyristor is triggered by applying No. 4Q light to the light irradiation area (1g) at the center of ff on the main surface on the cathode side. An optical fiber is used as the light guide (3) for applying the signal light, and one end surface (3a) of the light guide (3) has a light irradiation area (1g
), a part of the side surface of the light guide near this end face is fixed to the chip with adhesive (4), and then the light guide is attached to the electrode 4 along (2g) parallel to the main surface of the chip. provided toward the envelope side wall (5), and said g
The other main surface (3b) passes through a tubular body (6) inserted through the t11 wall and faces the light receiving window (7).
寸だ、光トリガサイリスクで第2図に要部が示されるラ
イトガイドがチップ(1)の受光域に1端面(3a)で
接し、ライトガイド1はチップの主面に垂直に上方へ伸
びカンード電極(2c)を貫通した構造がある。、そし
てライトガイドの上記工端面(3a)にライトガイドと
屈折率がほぼ等しく伸縮性のある一例のシリコンゴム(
8)を付着させ、硬粘性液状シリコンで付着させる何者
の際のその表面張力を>r++用してその端面に半球型
に形成している。The light guide, the main part of which is shown in Figure 2, is in contact with the light-receiving area of the chip (1) at one end surface (3a), and the light guide 1 extends upward perpendicularly to the main surface of the chip. There is a structure that penetrates the canned electrode (2c). , and an example of stretchable silicone rubber (having a refractive index almost equal to that of the light guide) is placed on the end surface (3a) of the light guide.
8) and is formed into a hemispherical shape on the end face by applying the surface tension of the hard and viscous liquid silicone to >r++.
上記従来の技術によると、チップの狭小な受光域にライ
トガイドの1端面を正確に取着けることがきわめて困難
で、例えば第3図に示す実線のライトガイドの望渣しい
取着位置のときは光伝達面積は(A)で示されるが、こ
れがずれた場合はライトガイドの端面の一部が図の破線
で示される取着位置となり、表面の電極膜上に一部が乗
り上げ光伝達面積が(A’) l/jて示されろものと
なり、前記望捷しい取着位1Nの場合の(A)よりも低
減され光伝達効率が低下する重大な欠点がある。According to the above-mentioned conventional technology, it is extremely difficult to accurately attach one end surface of the light guide to the narrow light receiving area of the chip. The light transmission area is shown in (A), but if this is shifted, part of the end face of the light guide will be at the attachment position shown by the broken line in the figure, and a part of it will ride on the electrode film on the surface, reducing the light transmission area. (A') l/j, which has the serious drawback that the light transmission efficiency is lower than that of (A) in the case of the desired attachment position 1N.
次に、接着剤を用いて強固に取着けるものでは、ザイリ
スタ本体の作動に伴なって熱的ストレスや機械的のスト
レスによってライトガイドにクラックが入ったり、折れ
たりする。これは主電、極となる銅とガラスの熱膨張係
数の差に基づくもので、その熱歪を長さ50間のライト
ガイドにつき計算すると次のようになる。Next, in the case where the light guide is firmly attached using an adhesive, the light guide may crack or break due to thermal stress or mechanical stress as the Zyristor main body operates. This is based on the difference in thermal expansion coefficient between copper and glass, which serve as the main electrode and pole, and the thermal strain calculated for a light guide with a length of 50 mm is as follows.
銅の熱膨張率・・・ 17 X 10 (deg
)ガラスの熱膨張率・・・0.5 X 10 (d
eg )dl=βJ!、dT(βは熱膨張率)からd
T=1001)にて
1dl=(17xlO−0,5xlO)x50xlo。Thermal expansion coefficient of copper... 17 x 10 (deg
) Coefficient of thermal expansion of glass...0.5 x 10 (d
eg)dl=βJ! , dT (β is the coefficient of thermal expansion) to d
1dl=(17xlO-0,5xlO)x50xlo at T=1001).
= 0.0825mm
斜上の削算によっても明らかなように大きな歪量となる
。= 0.0825mm As is clear from the reduction on the slope, the amount of distortion is large.
この発明は上記背景技術の問題点に鑑みてなされた光駆
動型半導体装置の改良構造を提供する。The present invention provides an improved structure of a light-driven semiconductor device, which has been made in view of the problems of the background art described above.
この発明は光駆動型半導体装置にかかり、チップを気密
に保持1−たパッケージと、パッケージに半導体素子の
主面に非垂直に信号光を導入する光透過窓と前記半導体
素子主面の受光域との間を折曲して連結するライトガイ
ドと、前記ライトガイドの端面に取着された伸縮性の透
光部材と、嵌合面とこの一部にライトガイドを保持する
開孔を有する一対の定位部材と、定位部材の一方を前記
チップに位置ぎめして同着する定位部材の固着手段と、
受光域に被着された伸縮性の透光部材層とを有し、ライ
トガイドにおけるチップ側の端面の透光部材が前記透光
部材層を介して受光域に接続していることを特徴とする
。The present invention relates to a light-driven semiconductor device, and includes a package that airtightly holds a chip, a light transmitting window for introducing signal light non-perpendicularly to the main surface of the semiconductor element, and a light-receiving area on the main surface of the semiconductor element. a pair of light guides that are bent and connected to each other; a stretchable light-transmitting member attached to the end surface of the light guide; and a fitting surface and a hole that holds the light guide in a part of the light guide. a positioning member, and a positioning member fixing means for positioning and attaching one of the positioning members to the chip;
and a stretchable light-transmitting member layer adhered to the light-receiving region, and the light-transmitting member on the chip-side end surface of the light guide is connected to the light-receiving region via the light-transmitting member layer. do.
以下にこの発明を1実施例の光駆動型づイリスクにつき
図面を参照して背児技術との相違点を詳細に把、明する
。Hereinafter, with reference to the drawings, the present invention will be explained in detail with reference to the drawings regarding one embodiment of the light-driven squirrel.
第4図ないし第6図に定位部材による固着方法を示す。4 to 6 show a fixing method using a positioning member.
まず、定位部材Ql)は、第1の定位部材(lla)と
第2の定位部材(llb)とからなる。第1の定位部材
は一例の中心角が90°なる扇形状の大部(llc)を
有する円板、第2の定位部材(]、llbは第1の定位
部材の大部(lie)を充填する扇形部((lid)を
有するとともに、第1の定位部材の円板部分の外周に嵌
合する環状部(lie)を備える。また、両部材の中心
部には嵌合させて円形の開孔(llf)を形成する切欠
(llf’) 、 (llf″)を備える。First, the localization member Ql) consists of a first localization member (lla) and a second localization member (llb). The first localization member is a disk having a sector-shaped large portion (llc) with a central angle of 90°, and the second localization member (], llb fills the large portion (lie) of the first localization member. It has a fan-shaped part ((lid)) and an annular part (lie) that fits on the outer periphery of the disc part of the first localization member. Notches (llf') and (llf'') forming holes (llf) are provided.
斜上の定位部材はチップの表面に第1の定位部材(ll
a)を第5図に示すように接着剤層(]O1で接着し、
この接着時に開孔(llf)を受光域に正対させる。The diagonal positioning member is attached to the first positioning member (ll) on the surface of the chip.
a) is bonded with an adhesive layer (]O1 as shown in Fig. 5,
During this bonding, the opening (llf) is made to directly face the light receiving area.
ついでライトガイド(3)の、予め端部に伸縮性の透光
部材の例えばシリコンゴム(6)を付着させたその一方
の端部を開孔に挿入【−1第2の定位部材(llb)を
ライトガイドに挿通させて近づけ嵌合させた状態が第6
図にも示される。Next, one end of the light guide (3), to which a stretchable transparent member such as silicone rubber (6) has been attached in advance, is inserted into the opening [-1 second localization member (llb)]. The state in which the light guide is inserted into the light guide and fitted close together is the sixth state.
Also shown in the figure.
さらにこの発明は、」二記ライトガイドの端面のシリコ
ンゴム(8)が受光域に接する部分の受光域の表面に被
着さねた屈折率が等しく、伸縮性の透光部材で一例のシ
リコンゴム層DIを介して接続されている。Furthermore, the present invention provides a stretchable light-transmitting member having an equal refractive index, in which the silicone rubber (8) on the end face of the light guide is adhered to the surface of the light-receiving area at the portion in contact with the light-receiving area. They are connected via a rubber layer DI.
斜上のシリコンゴムは、ぞの附着時に粘液状であるので
その表面張力を利用すれば図示の如く半球状に形成され
るが、成形を施して任意の形状にしてもよい。Since the silicone rubber on the diagonal is in the form of mucus when it is applied, its surface tension can be used to form a hemispherical shape as shown in the figure, but it may also be molded into any desired shape.
なお、この発明はチップの受光域(主面)K対してライ
トガイドが垂直に外囲器を貫通する型のものにも適用で
きる。また、透光部材もシリコンゴムに限られず屈折率
等を考慮して適宜選定してよい。さらに光トリガサイリ
スクやフォトトランジスタに限られず広く半導体装置に
適用することができる。Note that the present invention can also be applied to a type in which the light guide penetrates the envelope perpendicularly to the light receiving area (principal surface) K of the chip. Further, the light-transmitting member is not limited to silicone rubber, and may be appropriately selected in consideration of the refractive index and the like. Furthermore, it can be applied to a wide range of semiconductor devices, not limited to optical trigger transistors and phototransistors.
この発明によれば、ライトガイドをチップに固着させな
いので銅とガラスとの熱膨張係数の差によって生ずるラ
イトガイドのクラックや折れの発生が防止できる顕著な
効果がある。According to this invention, since the light guide is not fixed to the chip, there is a remarkable effect of preventing the light guide from cracking or bending caused by the difference in thermal expansion coefficients between copper and glass.
次に、受光域に対し定位部劇によってライトガイドの端
部が偏りなく接触されることから受光域直下で電子−正
孔対が均一に発生するので、初期点弧領域の狭小、臨界
オン電流上昇率(ターンオン時の立上りの急峻な電流に
より一すイリスクが熱破壊を起すことのない最大許容オ
ン電流上昇率、d i /d を耐量)の低下が防止さ
れる。Next, since the end of the light guide is evenly brought into contact with the light-receiving area due to the positioning mechanism, electron-hole pairs are generated evenly under the light-receiving area, resulting in a narrow initial ignition area and critical on-current. A decrease in the rate of increase (maximum allowable rate of increase in on-state current that does not cause thermal breakdown due to the steep current rise at turn-on, d i /d is the withstand amount) is prevented.
さらに、斜上の定位部利によってもチップ構造の微細化
とチップの特性の向上に対する高度の要望が充たせ々〈
なりつつあるため、感光域にシリコンゴム層を被着さぜ
ることによって、第7し」に示すようにライトガイドの
取着に微小偏りがあっても、(一般に微小(It■すΔ
Xによって光伝導効率は第8図に示すように顕著に低減
を見るものである。)図中に破線矢印で示したようにシ
リコンゴムの屈折率によって受光域の全域に拡張し、そ
の全面積(A)が有効になる。このため、光トリガ感度
も低下させることなく受光域全面が均一に点弧するので
di/dt耐量も低下しない顕著な利点がある。Furthermore, the use of diagonal positioning units continues to satisfy the high demands for miniaturization of chip structures and improvement of chip characteristics.
Therefore, by applying a silicone rubber layer to the photosensitive area, even if there is a slight deviation in the attachment of the light guide, as shown in Section 7, it is generally possible to
As shown in FIG. 8, the photoconductive efficiency is significantly reduced by X. ) As shown by the broken line arrow in the figure, the refractive index of the silicone rubber extends the entire light receiving area, and the entire area (A) becomes effective. Therefore, since the entire light receiving area is ignited uniformly without reducing the optical trigger sensitivity, there is a remarkable advantage that the di/dt tolerance does not decrease.
虜だ、受光域にシリコンゴム層を被着させても光伝送効
率にはほとんど影響なく、ライトガイド端との接続によ
る縦方向の応力に対してクッションになる効果もある。I'm hooked. Even if a silicone rubber layer is applied to the light-receiving area, it has almost no effect on the light transmission efficiency, and it also has the effect of cushioning against the longitudinal stress caused by the connection with the light guide end.
第1図は光トリガザイリスタの断面図、第2図は第1図
の要部の断面図、第3図は従来の欠点を示す断面図、第
4図ないし第6図はこの1実施例にかかる定位部材を示
し第4図は斜視図、第5図は断面図、第6図は上面図、
第7図は1実施例を説明するだめの断面図、第8図ヒラ
イトガイドの偏りと光伝達効率との相関を示す線図であ
る。
1 チップ
2、’l 、 2C,5パッケージ
3 ライトガイド
8 シリコンゴム
11a 第1の定位部材
11b 第2の定位部利
18 シリコンゴム層
代理人 弁理士 井 上 −男
第 1 図
第 2 図
第 3 図
第 4 図
第 5 図
第 6 図Fig. 1 is a cross-sectional view of the optical trigger zyristor, Fig. 2 is a cross-sectional view of the main part of Fig. 1, Fig. 3 is a cross-sectional view showing the conventional drawbacks, and Figs. 4 to 6 are one example of this embodiment. 4 is a perspective view, FIG. 5 is a cross-sectional view, and FIG. 6 is a top view,
FIG. 7 is a cross-sectional view for explaining one embodiment, and FIG. 8 is a diagram showing the correlation between the bias of the highlight guide and the light transmission efficiency. 1 Chip 2, 'l, 2C, 5 package 3 Light guide 8 Silicone rubber 11a First localization member 11b Second localization part 18 Silicone rubber layer agent Patent attorney Inoue 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6
Claims (1)
記パッケージに半導体素子の主面に非垂rM VC信号
光を導入する光透過窓と前記半導体素子主面の受光域と
の間を折曲して連結するライトガイドと、前記ライトガ
イドの端面に取着された伸縮性の透光部材と、一対で嵌
合面とこの嵌合面の−g(Sにライトガイドを保持する
開孔を有する定位部材と、前記定位部材の一方を半導体
素子に位置き′めして固着する定位部材の固着手段と、
前記受光域に被着された伸縮性の透光部材層とを有し、
ライトガイドにおける半導体素子側端面の透光部側が前
記透光部材層を介して受光域に接続していることを特徴
とする光駆動型半導体装置。A package that airtightly holds an optically driven semiconductor element, and a light transmitting window that introduces non-perpendicular M VC signal light into the main surface of the semiconductor element into the package and a light receiving area of the semiconductor element main surface are bent. a pair of light guides connected together, a stretchable light-transmitting member attached to an end face of the light guide, and a pair of fitting surfaces and -g(S) of the fitting surfaces having an opening for holding the light guide. a positioning member; a positioning member fixing means for positioning and fixing one of the positioning members to a semiconductor element;
a stretchable light-transmitting member layer deposited on the light-receiving area;
1. A light-driven semiconductor device, wherein a light-transmitting portion side of an end face of the light guide on the semiconductor element side is connected to a light-receiving region via the light-transmitting member layer.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149995A JPS5940575A (en) | 1982-08-31 | 1982-08-31 | Photo driven type semiconductor device |
GB08322868A GB2127220B (en) | 1982-08-31 | 1983-08-25 | Light-triggered semiconductor device and light guide thereto |
US06/526,807 US4695871A (en) | 1982-08-31 | 1983-08-26 | Light-triggered semiconductor device |
DE19833331451 DE3331451A1 (en) | 1982-08-31 | 1983-08-31 | LIGHT-CONTROLLED SEMICONDUCTOR ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149995A JPS5940575A (en) | 1982-08-31 | 1982-08-31 | Photo driven type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5940575A true JPS5940575A (en) | 1984-03-06 |
JPH0468790B2 JPH0468790B2 (en) | 1992-11-04 |
Family
ID=15487159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57149995A Granted JPS5940575A (en) | 1982-08-31 | 1982-08-31 | Photo driven type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5940575A (en) |
-
1982
- 1982-08-31 JP JP57149995A patent/JPS5940575A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0468790B2 (en) | 1992-11-04 |
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