JPS5940568A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS5940568A
JPS5940568A JP57150523A JP15052382A JPS5940568A JP S5940568 A JPS5940568 A JP S5940568A JP 57150523 A JP57150523 A JP 57150523A JP 15052382 A JP15052382 A JP 15052382A JP S5940568 A JPS5940568 A JP S5940568A
Authority
JP
Japan
Prior art keywords
elements
terminals
common electrode
terminal group
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57150523A
Other languages
Japanese (ja)
Other versions
JPH024147B2 (en
Inventor
Kazumi Komiya
小宮 一三
Toshio Yamashita
敏夫 山下
Hiromitsu Taniguchi
谷口 博光
Masaru Ono
大野 勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Panasonic System Solutions Japan Co Ltd
Panasonic Holdings Corp
Original Assignee
Matsushita Graphic Communication Systems Inc
Nippon Telegraph and Telephone Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Graphic Communication Systems Inc, Nippon Telegraph and Telephone Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Graphic Communication Systems Inc
Priority to JP57150523A priority Critical patent/JPS5940568A/en
Publication of JPS5940568A publication Critical patent/JPS5940568A/en
Publication of JPH024147B2 publication Critical patent/JPH024147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain elements most appropriate for facsimile read-out by a method wherein a plurality of photo receiving elements are arranged on a glass substrate, the group of common electrodes which electrically connect the elements by pluralities in a mass is arranged on one side of these elements, and discrete electrodes which electrically connect to each of the elements on the other side, resulting in the assembly thereof. CONSTITUTION:A piece of glass substrate 1 is adhered on a base 8, and a plurality of photo receiving elements are arranged thereon. Next, the terminals of the common electrodes connected to these elements are put together into the groups of terminals 12 and 13 divided into two, which are positioned on one side of the group of elements, and each of them is connected to film leads 14 and 15 of the same shape. The discrete wirings which electrically connect to each of the elements are put together into the group 16 of common wiring terminals on discrete side via a film lead 7 and then positioned on the other side of the group of elements, and a film lead 11 is connected thereto. Thus, the connection to an external circuit is performed only by the leads 11, 14, and 15.

Description

【発明の詳細な説明】 本発明は光電変換系子に関するものである。[Detailed description of the invention] The present invention relates to a photoelectric conversion system.

従来、ファクシミリ等の送信原稿の読み取り用センサと
しては、−次元のフォトダイオードアレイと走査回路と
を集積化(IC化)した自己走査形イメージセンサが用
いられていたが送信原稿の巾が広い場合には光学レンズ
による縮小率を大きくする必要がある。送信原稿とセン
サ間の距離が長くなり、そのため装置が大形化する欠点
があった。
Conventionally, a self-scanning image sensor that integrates a -dimensional photodiode array and a scanning circuit (IC) has been used as a sensor for reading documents sent in facsimile machines, etc., but when the width of the documents to be sent is wide. It is necessary to increase the reduction ratio by the optical lens. This has the disadvantage that the distance between the transmitted document and the sensor becomes long, which increases the size of the device.

最近、ファクシミリ装置を小型化するために、送信原稿
と1:1に対応する長尺の密着形センサとセルフォック
レンズとの組合せによる読取り方式が提案されている。
Recently, in order to miniaturize facsimile machines, a reading method has been proposed that uses a combination of a long contact type sensor and a Selfoc lens that corresponds 1:1 to a transmitted document.

送信原稿がA4判の場合にはセンサ長は216欄必要で
あり、センサ密度を8本/1ranとすると、センサ数
は1728個とガる。
If the original to be sent is A4 size, 216 columns of sensor length are required, and if the sensor density is 8 lines/ran, the number of sensors will be 1728.

このような長尺のセンサは、通常Cd5−CdSe、−
CdSe、 Se −As−Te、 a −St  な
どの薄膜を、ガラス基板上に蒸着法、スパッタ法、グロ
ーディスチャージ法などによって形成し、フォトエッチ
法によって島状捷たは帯状に成形し、電極を蒸着法等に
よって被着し、フォトリン技術によって形成して作製し
ている。この場合、センサ数が多いので外部回路と接続
する端子数を減らすために同一基板上でマトリックス配
線を行っているのが普通である。例えばセンサ数が17
28個の場合にはセンサを32個づつ54個のブロック
に分割し、各ブロック毎に一方の電極を共通に結線し、
各ブロック毎の各々対応する個別電極を共通に結線して
32X54のマトリックス配線を行なうことによって、
外部端子数を32+54=86に減らすことができる。
Such long sensors are usually Cd5-CdSe, -
A thin film of CdSe, Se-As-Te, a-St, etc. is formed on a glass substrate by vapor deposition, sputtering, glow discharge, etc., and then formed into an island or strip by photoetching to form an electrode. It is produced by depositing it by a vapor deposition method or the like and forming it by photorin technology. In this case, since there are a large number of sensors, matrix wiring is usually performed on the same board to reduce the number of terminals connected to external circuits. For example, the number of sensors is 17
In the case of 28 sensors, divide the sensor into 54 blocks of 32 each, and connect one electrode in common for each block.
By connecting the corresponding individual electrodes of each block in common and performing 32x54 matrix wiring,
The number of external terminals can be reduced to 32+54=86.

第1図は密着型センサのマトリックス配線部の従来例を
拡大斜視図で示したものである。1はガラス基板、2は
受光素子、3は共通電極、4は共通電極の端子、5は個
別電極、6は各ブロックの各々に対応する個別電極を共
通に結線するためのフィルムリード7の共通配線で各ブ
ロック毎に個別電極の端子と結線されている。
FIG. 1 is an enlarged perspective view of a conventional example of a matrix wiring section of a contact type sensor. 1 is a glass substrate, 2 is a light receiving element, 3 is a common electrode, 4 is a terminal of the common electrode, 5 is an individual electrode, and 6 is a common film lead 7 for commonly connecting the individual electrodes corresponding to each block. Each block is connected to the terminal of the individual electrode by wiring.

第2図(a) 、 (b)はマトリックス結線された密
着型センサと外部回路との接続法の従来例を示す。
FIGS. 2(a) and 2(b) show a conventional example of a method of connecting a matrix-connected contact type sensor to an external circuit.

第2図(a)は共通側端子から外部回路への接続を個別
リード線とコネクターで、また個別側からはフィルムリ
ードで行なう構成の一例であり、1はガラス基板、7は
個別電極を共通に接続するためのフィルムリード、8は
基台、9は個別リード線、10はコネクター、11は個
別側のフィルムリードである。第2図(b)は共通側端
子から外部回路への接続フィルムリードで行なう構成の
一例であり、12が共通側フィルムリードである。
Figure 2 (a) is an example of a configuration in which the common side terminal is connected to the external circuit using individual lead wires and connectors, and from the individual side using film leads. 1 is a glass substrate, and 7 is an individual electrode that is commonly used. 8 is a base, 9 is an individual lead wire, 10 is a connector, and 11 is a film lead on the individual side. FIG. 2(b) shows an example of a configuration in which the common side terminal is connected to an external circuit by a film lead, and 12 is the common side film lead.

上記従来の構成ではいずれも共通側端子をガラス基板端
面にそのピッチを拡大・縮小することなくその捷ま出し
ているので、例えばA4判のセンサで、センサ密度8本
/喘の場合、32X54のマトリックス結線を行なうと
すると、共通側の端子数が54個、端子間のピッチが4
閾となり、個別にリード線またはフィルムリードの端子
を接続するのは容易であるが、一度に接続するのは困難
であり、量産する場合工数がかかる欠点がある。
In all of the above conventional configurations, the common side terminals are laid out on the end surface of the glass substrate without expanding or contracting the pitch. When performing matrix connection, the number of terminals on the common side is 54, and the pitch between terminals is 4.
Although it is easy to connect the lead wires or film lead terminals individually, it is difficult to connect them all at once, and mass production requires a lot of man-hours.

第2図(alの場合より第2図(b)の場合の方が量産
性は少しよくなるが、大型のフィルムリードを必要とす
るのでコストの点で問題がある。
Although mass productivity is slightly better in the case of FIG. 2(b) than in the case of FIG. 2(al), there is a problem in terms of cost because a large film lead is required.

本発明は上記従来例の欠点を除去するために、同一基板
上で共通側端子をその端子間のピッチを縮小して2個所
にまとめて配線するようにした光電変換!、−tであり
、以下図面にもとすいて゛本発明の詳細な説明する。
In order to eliminate the drawbacks of the above-mentioned conventional example, the present invention provides photoelectric conversion in which the common side terminals are wired in two locations by reducing the pitch between the terminals on the same substrate! , -t, and the present invention will be described in detail below with reference to the drawings.

第3図(a) 、 (b)は本発明の実施例を示す図面
である。第1図と第2図a、bとの対応部分には同一番
号を付している。第3図aは同一ガラス基板1」二で共
通電極の端子を2分割して端子群12と端子群13に捷
とめ、その端子群間のピッチおよび端子数を個別側の共
通配線の端子群16と同一にし、同一形状のフィルムリ
ード11,14.16で外部回路と接続できるようにし
たものである。
FIGS. 3(a) and 3(b) are drawings showing an embodiment of the present invention. Corresponding parts in FIG. 1 and FIGS. 2a and 2b are given the same numbers. In Figure 3a, the terminals of the common electrode are divided into two on the same glass substrate 1''2 and separated into a terminal group 12 and a terminal group 13, and the pitch and number of terminals between the terminal groups are determined by the terminal group of the common wiring on the individual side. 16, and can be connected to an external circuit using film leads 11, 14, and 16 of the same shape.

例えば34判、8本/8のセンサの場合にはセンサ長は
256 rum 、センサ数は2048個でこれを32
X64のマトリックス結線にして、共通側端子を2分割
すれば個別側端子数と同じ32本づつとなるので、端子
間のピッチを同一にすれば、外部回路との接続に同じ形
状のフィルムリードが使用できる。共通電極の端子群1
2.13および個別配線の端子群16をガラス基板に対
する密着性のよいNiCr −Au  の蒸着膜とし、
フィルムリードの先端を半田メッキしておくと、熱圧着
によりフィルムリードとガラス基板上のNiCr−Au
  端子とを一度に結線することが可能となる。
For example, in the case of a 34-size, 8/8 sensor, the sensor length is 256 rum, and the number of sensors is 2048, which is 32
If you use X64 matrix wiring and divide the common side terminal into two, you will have 32 terminals each, the same as the number of individual side terminals, so if you make the pitch between the terminals the same, you can use the same shaped film leads for connection with the external circuit. Can be used. Common electrode terminal group 1
2.13 and the terminal group 16 of the individual wiring are made of a NiCr-Au vapor deposited film that has good adhesion to the glass substrate,
If the tip of the film lead is solder-plated, the film lead and the NiCr-Au on the glass substrate are bonded by thermocompression.
It becomes possible to connect the terminals at once.

A4判、8本/rrrmのセンサの場合にはセンナ数が
1728個となり32X54のマトリックスにすると共
通電極の端子を2分割しても27となり個別側の端子数
と同一にすることはできないが、端子間のピンチさえ同
一にしておけば、同じフィルムリードが使用できる。こ
の場合フィルムリ−ド側の端子が少しあまるが何等問題
はない。
In the case of an A4 size sensor with 8 wires/rrrm, the number of sensors is 1728, and if it is a 32 x 54 matrix, even if the common electrode terminal is divided into two, it will be 27, which cannot be the same as the number of terminals on the individual side. The same film lead can be used as long as the pinch between the terminals is the same. In this case, there will be a little extra terminal on the film lead side, but there is no problem.

第3図(b)は外部回路との接続をフィルムゲートのか
わりに導電性エラストマーによって行なう方式のもので
、個別電極の共通配線の端子間ピッチをガラス基板の端
面−ばいに拡大した個別端子16′とそれと同一ピッチ
になるように共通電極の端子を2分割してまとめた共通
端子12’、13’から導電体間のピッチが上記端子間
のピッチより大巾に小さい丸棒または角棒状の導電性ニ
ジストマー17を用いて外部回路を組込んだプリント基
板との接続を行なうようにしたもので高価なフィルムリ
ードおよびそのボンディング工程も不要となシ七ンザの
交換も容易となる。
Fig. 3(b) shows a method in which the connection with the external circuit is made using a conductive elastomer instead of a film gate, and the pitch between the terminals of the common wiring of the individual electrodes is expanded to the end surface of the glass substrate. ' and common terminals 12' and 13', which are made by dividing the terminals of the common electrode into two and putting them together so that the pitch is the same as that, and the pitch between the conductors is much smaller than the pitch between the above-mentioned terminals. The electrically conductive resistor 17 is used to connect to a printed circuit board incorporating an external circuit, and expensive film leads and bonding processes are not required, making it easy to replace the circuit board.

この場合、個別側および共通側端子としてはガラス基板
に対する密着性がよく、耐触性に優れ長期の使用に耐え
るものとしてNiCr −Au の薄膜または透明導電
性薄膜が適している。
In this case, NiCr-Au thin films or transparent conductive thin films are suitable for the individual side and common side terminals because they have good adhesion to the glass substrate, are excellent in contact resistance, and can withstand long-term use.

以上説明したように本発明の光電変換會子によればファ
クシミリJ等の読み取シに用いる送信原稿と1:1に対
応する密着型センサの外部回路への接続用コネクタの取
付けが太[1]に簡易化されると同時に、コネクタ自身
も安価なものが使用できるなど工業的価値の高いもので
ある。%にフィルムリードのかわりに導電性エラストマ
を用いる場合には、高価なフィルムリードが不要になる
ばかりでなく、センサの検査や交換も非常に容易になる
という特徴も付加される。
As explained above, according to the photoelectric conversion system of the present invention, the connector for connecting the contact type sensor to the external circuit, which corresponds 1:1 to the transmitted original used for reading facsimile J, etc., can be installed thickly [1]. At the same time, the connector itself can be used at a low cost, so it has high industrial value. When a conductive elastomer is used in place of a film lead, the expensive film lead is not only unnecessary, but also the sensor can be inspected and replaced very easily.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のファクシミリの読取り用密着型センサの
受光素子およびマトリックス配線部の要部拡大斜視図、
第2図(a) 、 (b)はそれぞれ密着型センサのマ
トリックス配線から外部回路への接続構成を示す図、第
3図(a)、(b)はそれぞれ本発明の光電変換体+に
おける外部回路との接続構成の実施例を示す図である。 1・・・・・・ガラス基板、2・・・・・・受光素子、
3・・・・・・・共通電極、4・・・・・−共通電極の
端子、5・・−・・−・個別電極、6・・・・・・共通
配線、7・・・・・・フィルム’) −I’、11,1
4.15・・・−・・フィルムリード、12.12’、
13.13’  ・・・・−・共通電極から取り出した
端子群、16.16’  ・・・・・・個別電極から取
り出した端子群、17・−・・・・導電性エラストマー
。 代理人の氏名 弁理士 中 尾 敏 男 は力\1名3
2 第2図 /Q @3図 (α)
FIG. 1 is an enlarged perspective view of the main parts of the light-receiving element and matrix wiring part of a conventional facsimile reading contact type sensor;
Figures 2 (a) and (b) are diagrams showing the connection configuration from the matrix wiring of the contact type sensor to an external circuit, respectively, and Figures 3 (a) and (b) are diagrams showing the connection configuration of the photoelectric converter + of the present invention, respectively. FIG. 3 is a diagram showing an example of a connection configuration with a circuit. 1... Glass substrate, 2... Light receiving element,
3... Common electrode, 4...- Common electrode terminal, 5... Individual electrode, 6... Common wiring, 7...・Film') -I', 11,1
4.15...--Film lead, 12.12',
13.13'...Terminal group taken out from the common electrode, 16.16'...Terminal group taken out from the individual electrodes, 17...Conductive elastomer. Name of agent: Patent attorney Toshio Nakao \1 person 3
2 Figure 2/Q @Figure 3 (α)

Claims (3)

【特許請求の範囲】[Claims] (1)基板上に複数個の受光素子を配列し、前記受光素
子の一方側に同受光素子を複数個ずつまとめて電気的接
続する共通電極群を配置し、前記受光素子の他方側に前
記受光素子の各々と電気的に接続される個別電極を配置
し、前記共通電極群を外部回路に接続するための端子群
を複数の端子群に分け、同複数の端子群を異なる箇所に
集めたことを特徴とする光電変換f子。
(1) A plurality of light-receiving elements are arranged on a substrate, a common electrode group for electrically connecting a plurality of the light-receiving elements together is arranged on one side of the light-receiving element, and a common electrode group is arranged on the other side of the light-receiving element. Individual electrodes electrically connected to each of the light receiving elements are arranged, a terminal group for connecting the common electrode group to an external circuit is divided into a plurality of terminal groups, and the same plurality of terminal groups are collected at different locations. A photoelectric conversion f-son characterized by:
(2)共通電極から取シ出した端子群と個別電極から取
り出した端子群の端子の形状および端子間のピップを同
一にすることを特徴とする特許請求の範囲第1項記載の
光電変換1−F−0
(2) Photoelectric conversion 1 according to claim 1, characterized in that the shape of the terminals and the pips between the terminals of the terminal group taken out from the common electrode and the terminal group taken out from the individual electrodes are made the same. -F-0
(3)共通電極から取り出した端子群と個別電極から取
り出した端子群をNiCr −Au薄膜で形成し、外部
回路−との接続をフィルムリードにより行なうことを特
徴とする特許請求の範囲第2項記載の光電変換子+。 (3)共通電極から取り出した端子群と個別電極の共通
配線からの各端子群をNiCr −Au 薄膜または透
明導電性薄膜で形成し、外部回路との接続を導電性ニジ
ストマーにより行なうことを特徴とする特許請求の範囲
第2項記載の光電変換系子チ。
(3) Claim 2, characterized in that the terminal group taken out from the common electrode and the terminal group taken out from the individual electrodes are formed of a NiCr-Au thin film, and the connection with an external circuit is made by a film lead. Photoelectric converter + as described. (3) The terminal group taken out from the common electrode and each terminal group from the common wiring of the individual electrodes are formed with a NiCr-Au thin film or a transparent conductive thin film, and the connection with the external circuit is made with a conductive nidistomer. A photoelectric conversion system according to claim 2.
JP57150523A 1982-08-30 1982-08-30 Photoelectric transducer Granted JPS5940568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57150523A JPS5940568A (en) 1982-08-30 1982-08-30 Photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150523A JPS5940568A (en) 1982-08-30 1982-08-30 Photoelectric transducer

Publications (2)

Publication Number Publication Date
JPS5940568A true JPS5940568A (en) 1984-03-06
JPH024147B2 JPH024147B2 (en) 1990-01-26

Family

ID=15498722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150523A Granted JPS5940568A (en) 1982-08-30 1982-08-30 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5940568A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428065U (en) * 1987-08-10 1989-02-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428065U (en) * 1987-08-10 1989-02-17

Also Published As

Publication number Publication date
JPH024147B2 (en) 1990-01-26

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