JPS5935087A - Device for pulling semiconductor single crystal - Google Patents

Abstract

PURPOSE:To provide the titled device capable of pulling a semiconductor single crystal having excellent quality, by attaching the wind-up mechanism of the vertically movable single crystal pulling rod to an extendable chamber for the take- out of the crystal, thereby reducing the length of the pulling rod and increasing the rate of rotation. CONSTITUTION:The device for pulling a semiconductor single crystal is composed of a furnace 1 and a crystal take-out chamber 4 which is composed of a lower chamber 4a, an upper chamber 4b having the shape of bellows, and a shut- off valve 5 attached to the boundary of said chambers. The seed crystal 10 held to the tip of the pulling rod 8 consisting of a string is immersed in the molten silicon 11 contained in the crucible 2 attached to the supporting rod 3, and the pulling rod 8 is wound up with the wind-up mechanism 7 under rotation while rotating the crucible 2. The silicon single crystal 12 is pulled up by this process. The wind-up mechanism 7 attached to the upper chamber 4b is lifted while extending the upper chamber 4b under the guide with the guide shaft 6, the shut- off valve 5 is closed, the upper chamber 4b is separated from the valve and contracted, and the silicon single crystal 12 is taken out of the device.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an apparatus for pulling a single crystal semiconductor such as single crystal silicon.

[Technical background of the invention]

Conventionally, the Gouyo-Colarski method (CZ method) has been known as one of the H-adic methods for single-crystal semiconductors, such as single-crystal silicon, which are used as materials for transistor substrates and integrated circuit substrates. This method &iFigure 1 As shown in FIG. 2, a polycrystalline silicon raw material and a control active impurity are placed in a crucible b placed in a furnace body a, and heated by a heater (not shown) to melt them and obtain a silicon melt C. and,
Immerse the seed crystal d in the silicon melt e and c in the crucible b, and wind up the pulling material f, which is made of a wire, chain, etc., connected via the seed crystal holder e. The structure is such that an excess amount of single crystal silicon can be obtained by pulling it up and rotating it.

When pulling single crystal silicon g,
It is generally known that increasing the rotational speed of the seed crystal d improves the specific resistance and oxygen concentration distribution characteristics in the cross section of the single crystal silicon g. is desired.

[Problems with background technology]

However, in the past, as shown in FIG. The single crystal silicon g is lifted into the crystal extraction chamber i by raising a pulling body ttm consisting of a strip by a winding mechanism j provided on the upper end side of the single crystal silicon g. Note that @) shows the seed crystal dfK: brought into contact with the silicon melt C in the crucible b. (b) is li
Finished pulling t-crystal 7 recon g. (c) Monocrystalline silicon gt on the Leahy side using the 7-off valve.
Lifting shut-off pulp k is closed. ) shows the opening of the door hl of the crystal extraction chamber 1 in order to take out the single crystal silicon gt. In this way, in the past, pulled single crystal silicon g
e To take it out of the machine, hang the monocrystalline silicon g.
As the length of the pulling body f made of strips such as wires and chains becomes longer, the length of the pulling body f consisting of strips such as wires and chains becomes longer. The length of f is required to be approximately 2.5 m. On the other hand, in the insertion and pulling device with , it is the same as a pendulum, and the maximum rotation speed of the seed crystal d is f
U! Currently, the number of rotations of the seed crystal d cannot be increased as desired due to the I limit.

That is, when an attempt is made to increase the rotational speed of the pulling body f, the vibration of the pulling mechanism j causes the swing of the single crystal silicon g in the pulling member and the perturbation of the surface of the silicon melt C. Occurred at 2 t) 1. This makes it difficult to grow crystalline silicon g. However, in 9, the rotational speed of the drag body f cannot be increased beyond a certain limit, and the specific resistance in the cross section of the medium crystalline silicon g and v! There was a drawback that it became impossible to improve the distribution characteristics of elementary concentration.

[Purpose of the invention]

The present invention has been made based on the above circumstances, and its object is to shake a tψ crystal thousand conductor during removal. By increasing the rotational speed of the seed crystal without generating vibrations on the surface of the molten semiconductor and the resistivity in the cross section and the distribution of oxygen
t'l: Manufactured an improved crystalline conductor.
C which seeks to provide a pulling device for this crystal conductor.
be.

[Summary of the Invention] In order to achieve the above object, the present invention provides a method of connecting a crystal 71 to a master crystal;
Using the baked clay mechanism to raise the body, the crystal ゛V.2, I
If the y-body can be raised and lowered freely along the two-way direction, the crystal extraction bouton 2f, in which the pulled single crystal semiconductor is accommodated, will be 41 no. From something to something that can be reduced freely - Kimie, every single song is one
(:Reduction 1..- By pulling up with r/ and one-sided deafness, the length of the pulling body can be increased by 1 and the rotation angle 9 can be increased (゛?217)〇 Example 1R, 'F, Example 6 of the invention hiIt = lr 3
This will be explained with reference to Figure 4. In the figure, 1 is a furnace body (chamber) having an opening at the top, and a crucible 2 is disposed inside this furnace body 1.
It is supported by a support rod 3 inserted therein.

Further, a crystal extracting chamber (pull chamber) 4 is mounted on the upper part of the furnace body 1 and fits into the opening formed in the upper part. This crystal extraction chamber 4 is composed of a lower chamber 4a made of a rigid member and an extensible upper chamber s4b made of a bellows, and a shut-off pulp 5 is attached to the boundary between them. Further, the upper end chamber 4a is connected to a baking mechanism 7 attached to the lower end with a guide 1 and an eighth shaft 6 guided, and the lower end side is connected to the F section channel 4a. It has a structure that allows it to be attached and detached freely and maintain an airtight state.

In addition, the above-mentioned baking mechanism 7 is installed in the crystal extraction]-chamber 4.
A puller body 8, which can also be a strip of wire, chain, etc., that can be freely wound is hung down, and a seed crystal holder 9 is attached to the lower end of the puller body 8.
The seed crystal 10 is in a state of being completely connected via the .

At L7 or I-, a polycrystalline semiconductor, a polycrystalline silicon raw material at -2, and an active impurity for control are placed in Ruth Ge 2 and heated with a heater (not shown) to melt them, and the silicon melt is heated. Obtain liquid horns.

On the other hand, the winding mechanism 7 is previously placed in the lower position side to compress the upper chamber 4b of the jumper 4 for the crystal removal 17.

Then, as shown in FIG. 4 (0), the seed crystal 10 is immersed in the silicon melt 11 in the I crucible 2, and while the crucible 2 is rotated by the support rod 3, the drag body 8 is stirred. Single crystal silicon 12 is obtained by pulling and pulling while rotating with mechanism 7.

Therefore, as shown in Figure 4 (b), single crystal silicon 12
After the pulling is completed, the winding mechanism 7 is moved upward as shown in FIG. 4(C). Turn 12 into Sha 1. Lift above to-off valve 5-C
Close the Shanotomefu Pulses 5@Next, as shown in 4th and 1), the lower end of the upper chamber 4b is cut off from the lower chamber 4a and contracted to expose the single crystal silicon 12, and in this state, the single crystal silicon 12 will be taken out.

However, in the second configuration of the present invention, the length of the pulling stop 8 during pulling can be shortened by replacing the seven chambers 1 of the conventional apparatus with extensible ones such as bellows. It partially increases the rotational speed of crystal lO,
Conventional equipment required a length of about 2.5 m to pull out a single crystal silicon 12 long piece, but with the present invention, it is possible to shorten it to about β. ,
It is now possible to increase the resonance rotation speed to 40.

Note that the resonance rotation speed N (r, p, m.) is the gravitational acceleration Q
(9,8m/s2), when the distance A from the fulcrum of the pulling body to the center of gravity is 17, it is expressed as N-:yrl\.

〔Effect of the invention〕

As explained above, according to the present invention, by increasing the rotational speed of the seed crystal without causing any vibration in the semiconductor such as single crystal silicon being pulled or vibration on the surface of the molten semiconductor, One effect is that a good single crystal semiconductor with improved resistivity and oxygen concentration distribution characteristics can be manufactured.

[Brief explanation of the drawing]

Fig. 1 is a schematic cross-sectional view of a conventional device with some parts omitted, and Fig. 2 (a) to 2) show the spout crystals included in the conventional device.
°i#); Explanatory drawings showing each process from lifting of the body to just before removal, Figures 3 and 4 (A) to 4) show one embodiment of the present invention, and Figure @3 shows - iB cross-section (not shown), schematic front view, Figures 4(a) to 4) are single-crystal half-sections, +
(4・C/Totsuki- shows each process from ○ to just before taking out・J theory HIjll IQI OI...Furnace body (chamber), 2...Rutsu rj!, 4...Crystal Tori 11j
L f-Yang Ri (Kulchan <), 4a...Lower chamber, 4b...Upper chain V-Chin Ri (Bellows ha 5...Shut-off pulp, 6...Guide Zo Yaft, 7... - Lifting mechanism, 8... Lifting body consisting of stripes, 9... Seed crystal holder, lO... Seed crystal, 1)
Silicon melt, 12...single crystal silicon.

Claims (1)

[Claims] A single crystal semiconductor is produced by bringing a seed crystal into contact with a semiconductor melt within (+1) 1ζ, and pulling up this 441 crystal by winding up a pulling body consisting of a strip connected to it. In the apparatus for pulling up a single crystal semiconductor, the winding mechanism for winding up the pulling body is directed in the direction of pulling the single crystal semiconductor. A single-crystal semiconductor pulling device characterized in that D is movable up and down, and a crystal extraction chamber in which the single-crystal semiconductor pulled by the hoisting mechanism is accommodated is extendable and retractable. (2) The apparatus for pulling a single crystal semiconductor according to claim 1, wherein the crystal extraction chamber is constructed of a bellows.