JPS5933279B2 - レ−ザ装置 - Google Patents

レ−ザ装置

Info

Publication number
JPS5933279B2
JPS5933279B2 JP9973376A JP9973376A JPS5933279B2 JP S5933279 B2 JPS5933279 B2 JP S5933279B2 JP 9973376 A JP9973376 A JP 9973376A JP 9973376 A JP9973376 A JP 9973376A JP S5933279 B2 JPS5933279 B2 JP S5933279B2
Authority
JP
Japan
Prior art keywords
laser
laser device
oscillation
single crystal
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9973376A
Other languages
English (en)
Other versions
JPS5325392A (en
Inventor
忠雄 小見
俊夫 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP9973376A priority Critical patent/JPS5933279B2/ja
Publication of JPS5325392A publication Critical patent/JPS5325392A/ja
Publication of JPS5933279B2 publication Critical patent/JPS5933279B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants

Description

【発明の詳細な説明】 本発明はレーザ用単結晶に関し、特にＹ３Ａｌ５Ｏ、２
／Ｎｄ単結晶（Ｎｄ二ＹＡＧと略記）を使用したレーザ
装置に関する。
Ｎｄ：ＹＡＧレーザは非常にすぐれているが高人力化す
ると発振出力は第１図の如く飽和現象が ２見られる。
このため発振が不安定になりレーザの応用上問題が生じ
る。この欠点を改良するため本発明者等はＮｄ：ＹＡＧ
単結晶中に微量のＳｉイオンを添加することにより発振
閾値も下がりレーザ装置として非常にすぐれた特性を持
つ事がわか 。つた。Ｎｄ：ＹＡＧ単結晶を引上げる際
にメルト中にＳｉＯ２を添加して、得られた結晶を分析
し、Ｓｉイオン濃度とレーザ発振の閾値（ｔｈｒｅｓｈ
ｏｌｄ）の関係を測定した所第２図の如くになり、結晶
中のＳｉイオン濃度としては２Ｙｉμｍから１０３ｗｍ
の範囲が良い事がわかつた。以下、本発明の一実施例に
ついて説明する。
第１図は従来のＹ３Ａｌ５Ｏ、２／Ｎｄと本実施例のＹ
３Ａｌ５Ｏ、２／ Ｎｄ、、Ｓｉとを比較した入カー発
振出力相関図であり、Ｎｄ濃度は２原子％及びＳｉ含有
量＆魚 １００ｐμｍのもので引上法によつて育成され
た。図示されている様に従来のＹ３Ａｌ５Ｏ１２／Ｎｄ
では飽和現象を示したが、Ｓｉが含有された本実施例の
Ｙ３Ａｌ５０１２／Ｎｄ、Ｓｉでは発振出力も大きく、
飽和が見られなかつた。
第２図は発振開始エネルギーとレーザ結晶中のＳｉ含有
量との関係を示すもので、化学分析によりＳｉ含有量を
測定した。第２図の結果から２ｐμｍから１０３ｐμｍ
の間のＳｉ量が有効にレーザ育成に働くことがわかつた
。従つて本発明におけるＳｉの含有量を定める理由とし
た。以上、実施例から明らかなように本発明のＮｄ二Ｙ
ＡＧ単結晶中にＳｉを含有させたレーザロッドをレーザ
装置に具備させる事によつて発振出力の飽和が見られな
い、レーザ発振開始エネルギーの低い、効率の良い高性
能のレーザ装置を得る事が出来、例えば穴あけの様な加
工等に使用する場合非常に精度を向上させることができ
るものである。
【図面の簡単な説明】
第１図は従来のレーザ用単結晶と本発明の単結晶とのそ
れぞれ入カー発振出力関係を示す相関図、第２図は本発
明におけるＮｄ：ＹＡＧ単結晶中のＳｉが及ぼす発振開
始エネルギーを示す図である。

Claims (1)

    【特許請求の範囲】
  1. １ ２ｐｐｍから１０３ｐｐｍのＳｉイオンを含んだＹ
    ＿３Ａｌ＿５Ｏ＿１＿２／Ｎｄ単結晶を具備したレーザ
    装置。
JP9973376A 1976-08-23 1976-08-23 レ−ザ装置 Expired JPS5933279B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9973376A JPS5933279B2 (ja) 1976-08-23 1976-08-23 レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9973376A JPS5933279B2 (ja) 1976-08-23 1976-08-23 レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5325392A JPS5325392A (en) 1978-03-09
JPS5933279B2 true JPS5933279B2 (ja) 1984-08-14

Family

ID=14255240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9973376A Expired JPS5933279B2 (ja) 1976-08-23 1976-08-23 レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5933279B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007112951A (ja) * 2005-10-24 2007-05-10 Fujifilm Corp 無機化合物及びこれを含む組成物と成形体、発光装置、固体レーザ装置

Also Published As

Publication number Publication date
JPS5325392A (en) 1978-03-09

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