JPS5933261U - Amorphous semiconductor solar cell - Google Patents
Amorphous semiconductor solar cellInfo
- Publication number
- JPS5933261U JPS5933261U JP12796282U JP12796282U JPS5933261U JP S5933261 U JPS5933261 U JP S5933261U JP 12796282 U JP12796282 U JP 12796282U JP 12796282 U JP12796282 U JP 12796282U JP S5933261 U JPS5933261 U JP S5933261U
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- amorphous semiconductor
- semiconductor solar
- transparent electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の非晶質シリコン太陽電池の拡大一部断面
図、第２図は本考案の一実施例の拡大断面図、第３図は
その金属集電電極の平面図、第４図及び第５図はそれぞ
れ本考案の実施例の変換効率特性図、第６図は従来例の
変換効率特性図である。
１・・・透光性基板、２・・・透明電極第１形成層、３
・・・金属集電電極、４・・・透明電極第２形成層、５
・・・非晶質シリコン半導体層、６・・・背面電極。Fig. 1 is an enlarged partial sectional view of a conventional amorphous silicon solar cell, Fig. 2 is an enlarged sectional view of an embodiment of the present invention, Fig. 3 is a plan view of its metal current collector electrode, and Fig. 4. 5 and 5 are conversion efficiency characteristic diagrams of an embodiment of the present invention, and FIG. 6 is a conversion efficiency characteristic diagram of a conventional example. 1... Transparent substrate, 2... Transparent electrode first formation layer, 3
...Metal current collecting electrode, 4...Transparent electrode second forming layer, 5
... Amorphous silicon semiconductor layer, 6... Back electrode.
Claims (1)
池において、前記透明電極は、前記透光性基板上に形成
された透明電極第１形成層と、その表面上に形成された
櫛状等の金属集電電極と、前記透明電極第１形成層及び
金属集電電極の表面に形成された透明電極第２形成層と
より成ることを特徴とする非晶質半導体太陽電池。In an amorphous semiconductor solar cell in which a transparent electrode is formed on a transparent substrate, the transparent electrode includes a transparent electrode first formation layer formed on the transparent substrate and a comb formed on the surface thereof. 1. An amorphous semiconductor solar cell comprising: a metal current collector electrode having a shape, etc.; and a second transparent electrode formation layer formed on the surfaces of the first transparent electrode formation layer and the metal current collection electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12796282U JPS5933261U (en) | 1982-08-26 | 1982-08-26 | Amorphous semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12796282U JPS5933261U (en) | 1982-08-26 | 1982-08-26 | Amorphous semiconductor solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5933261U true JPS5933261U (en) | 1984-03-01 |
Family
ID=30290447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12796282U Pending JPS5933261U (en) | 1982-08-26 | 1982-08-26 | Amorphous semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5933261U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282088A (en) * | 1975-12-27 | 1977-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric converting element |
-
1982
- 1982-08-26 JP JP12796282U patent/JPS5933261U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282088A (en) * | 1975-12-27 | 1977-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric converting element |
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