JPS5932189A - Light amplifying method and device - Google Patents

Light amplifying method and device

Info

Publication number
JPS5932189A
JPS5932189A JP14310882A JP14310882A JPS5932189A JP S5932189 A JPS5932189 A JP S5932189A JP 14310882 A JP14310882 A JP 14310882A JP 14310882 A JP14310882 A JP 14310882A JP S5932189 A JPS5932189 A JP S5932189A
Authority
JP
Japan
Prior art keywords
laser
light
image information
information
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14310882A
Other languages
Japanese (ja)
Inventor
Fumitaka Kan
簡 文隆
Wahei Tokuda
徳田 和平
Hiroshi Satomura
里村 博
Masayoshi Takahashi
正義 高橋
Shinji Hanada
花田 真二
Yoshinobu Shimomura
下村 義信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14310882A priority Critical patent/JPS5932189A/en
Publication of JPS5932189A publication Critical patent/JPS5932189A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/092Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
    • H01S3/093Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp focusing or directing the excitation energy into the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To amplify a light in high sensitivity and high resolution with low voltage and low power consumption by emitting information light which contains image information in a laser array and inducing a laser oscillation in the individual laser media in accordance with the image information. CONSTITUTION:Information light 10 which contains image information is incident through an infrared filter 9, and focused on a laser rod array via a lens array. The individual laser rods 1 which form this laser rod array are excited by an exciting light from a Kr arc lamp 7, and a laser oscillation occurs in accordance with the image information by the emission of the information light. The light which contains the image information amplified by the induction and the emission is outputted from the laser rod array, and converted into an electric signal via an image pickup element 6. In this case, an LED or the like may be used instead of the lamp 7 as an exciting light source. In this manner, a light amplifier which has high sensitivity and high resolution can be obtained.

Description

【発明の詳細な説明】 本発明は光増幅方法および装置に係シ1更に詳しくけレ
ーザ媒質の誘導放出による光増幅を利用し゛C1画f象
情報を注む情報光を増幅する光増幅方ンlくおよび装F
Jに門する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical amplification method and apparatus.1More specifically, the present invention relates to an optical amplification method and apparatus. 1 and installation F
Enter J.

従来、上記のような画像情報の増幅装置として、−yt
nt子増倍管、イメージインデンジファイヤ等が知られ
ている。また近年、マイクロチャンネルプレー1・と称
さiする二次′H−子放出現象を利用した素子を多数並
列に配置することにより画像情報を電気信号として取り
出す装置も実用化されている。
Conventionally, as an image information amplification device as described above, -yt
nt multiplier tubes, image indensifiers, and the like are known. Furthermore, in recent years, a device called a microchannel play 1, which extracts image information as an electrical signal, has been put into practical use by arranging a large number of devices in parallel that utilize the secondary H-n emission phenomenon.

しかしながら、前記装置は全て情報光を電気信りに袈換
−しで増幅するもので、従来画像情報を光のまま増幅す
る)Y:増幅装置は全く知られていなかった。
However, all of the above-mentioned devices amplify information light by converting it into an electrical signal, and conventionally, image information is amplified as light.) Y: Amplification devices were completely unknown.

ヤた、1ノを来の装置にオ、5いて、上ml光屯チ増倍
管は画像情報から解闇度の、島(・情報を祷るため罠は
十分なものとは言えず、イメージインテンシファイヤは
未だ感、11(が十分ではなく、その使用に当っては十
分な霧)“(: [1iを要する。またマイクロチャン
ネルプレートは解像度及び感度共に十分なものであるが
、二次′螺子放出現象を利用するため高′電圧を要し、
素子の発熱が大きく、更にX脚等の発生も懸念される。
Ya, I put 1 in the next device, 5, and the upper ml light multiplier tube is the image information, the darkness level is clear, and the island (・The trap is not enough to pray for information, Image intensifiers still require 1i (but not enough, and enough fog for their use).Also, microchannel plates have sufficient resolution and sensitivity, but two High voltage is required to utilize the next screw release phenomenon,
The element generates a large amount of heat, and there is also a concern that X-legs may occur.

本発明しま上記@;S実に鑑み、画像情報を)Y;のま
ま増幅し、低電圧で高い感度及び解像度を実覗、する光
増幅方法および装置を提供することを目的とする。
In view of the above facts, it is an object of the present invention to provide an optical amplification method and apparatus that amplifies image information as it is and provides high sensitivity and resolution at low voltage.

本発明は、少なくとも2個v上のレーザ媒質をアレイ状
に配置してレーザーアレイを構成し、該レーザアレイに
画像11マ報を含んだ情報光を照射して、個 るものである。
In the present invention, at least two laser media are arranged in an array to form a laser array, and the laser array is irradiated with information light containing 11 images.

:I f、:本発明しよ、少々くとも2個以上のレーザ
媒11tち・アレイ4入に自Q、 ji’+したレーデ
アレイと、X1flN己個々θ)ルーリ゛ρj1ξ)+
17を励起する励起手段と、前記レーザアレイ((1・
iil l’42 ’l’1報をバんだIW報光を結像
する手I′σ、とからJil/己へ該1iijj I木
悄慢に従って削記個々のレーザlt’1. i’+にレ
ーザ発振を拘樽することによって前關悄(14、)’f
;を増幅−する光増;1v4装置1イを提供するもσ)
であて〕。
:I f, :Invent the present invention, at least two or more laser media 11t, a laser array with Q, ji'+ in the array 4, and X1flN each individual θ) Luli ゛ρj1ξ)+
17; and an excitation means for exciting the laser array ((1.
ii l'42 'l'1 The hand I'σ that images the IW information that has failed the 'l'1 signal, and the individual lasers lt'1. By restricting laser oscillation to i'+,
; amplifying the light; providing a 1v4 device with σ)
Atte].

1−J T、木y)’/+、明を実施1り11 Vm基
づき具体的に説明する。
1-J T, tree y)'/+, light will be specifically explained based on the implementation 11 Vm.

第1図〜第6図(1)) iJ、本発明に基づく光増幅
装置の2111実施14すを酸明する1ン1である。
FIGS. 1 to 6 (1)) iJ, 2111 implementation 14 of the optical amplification device based on the present invention.

、・01図シ」本実施例に用いるレーザアレイの概略を
示す図である。ここで1はレーザロッドで、直T”41
00 /l Illのファイバー状Ndニガラスから成
るレーザ媒質である。また該レーザロッド10両端は金
(4を蒸着して反!JH4k 2 、3を形成り、てい
る。また、個々のレーザロッドは第2図13に示すよう
に屈折率!1が、そのコア部において二乗分布を示す。
, 01 is a diagram schematically showing a laser array used in this example. Here, 1 is the laser rod, straight T"41
The laser medium is made of fiber-like Nd glass of 00/l Ill. Further, both ends of the laser rod 10 are evaporated with gold (4) to form anti-!JH4k 2,3.In addition, as shown in FIG. The square distribution is shown in the section.

(・ニーこで、1b、4′は夫々、レーザロット°のり
2ラド部及びレーザロッド支持部材の屈折率を示す。)
この21、うな二乗分布をt)つたレーザロッド(,1
, 3十 1)中心部′VrNd  イオンを高61度Vr、含み
、周辺部2ス 3+ 2) N(I  イ刊ン(・」一様に分布しており、ガ
ラス々へ)’Iffのhi1折率が二〕)を分布を示ず
、j9’r謂セルフメック し/ −田゛ のい−3’i)でも良い。
(At the knee, 1b and 4' indicate the refractive index of the laser rod part and the laser rod support member, respectively.)
This 21, laser rod (,1
, 31) The center contains Nd ions at a high 61 degrees Vr, and the peripheral part 2s3+ 2) If the refractive index is 2]), it may not show any distribution and may be a so-called self-mecking/-3'i).

?11.ろ1・゛旧;t) k、J、本実バV例の構成
の概略を示し、第6FG;+ (+11は第ろ[・・′
、1 (11のA、 lcおけろ断面の慣、略図である
? 11. ro 1・゛old;t)
, 1 (A of 11 is a schematic diagram of the lc cross section.

第5図(、l) 、 (lりに1・5℃・て、1はNd
ガラス製レーザロッド、2,3はアルミニウム7A ’
NV IjIλによる反射鏡、4 Ftレルーロッド程
1−1〜部材、5ケ」、レーザロッドアレイに情報光を
結1bjさビるだめの短焦点レンズアレイで、個々のレ
ンズの焦、ψ、は各々対応するレーザロッド1の中央と
なるように配置されている。
Figure 5 (,l), (1.5℃, 1 is Nd
Glass laser rod, 2 and 3 are aluminum 7A'
Reflector by NV IjIλ, 4 Ft rod length 1-1 to 5 members, connects the information light to the laser rod array 1bj A short focal length lens array, the focus of each lens, ψ, is It is arranged so as to be in the center of the corresponding laser rod 1.

よた6υ、11曽吹、Iさオ]た毘をtIj、気1d号
に(換する(:(:I)等の471+ 1象素子、9は
赤外透過フィルタである。7目クリプトンアークランプ
で第6図(1))のように対称形に4オ並んでいる。レ
ーザロッド保持部材4け円弧に囲まれた断面形状を示し
、夫々の円弧の中心はクリプトンアークランプ7に対応
している。
Yota6υ, 11 Sobuki, Isao] Tabi to tIj, Ki 1d ((:(:I) etc. 471 + 1 element, 9 is an infrared transmission filter. 7th krypton arc The lamps are lined up in a symmetrical manner as shown in Figure 6 (1)).The cross section of the laser rod holding member is surrounded by four arcs, and the center of each arc corresponds to the krypton arc lamp 7. ing.

またクリプトンアークランフ7のイS″r信を無声とす
る放物面r(,18が4つ対称に配筋さねている。
In addition, there are four paraboloids r (, 18) symmetrically arranged to make the I S''r signal of Krypton Arklumph 7 silent.

Milii+F、反射fii’i 2 、3 )反射率
r、J、夫々98%、95チであるが、情報光の入射す
る反射鏡〜2〜の中央部の径1μmの微小領域は反射率
90チさして煮干)し透過性を(−4だ・)λている。
Milii+F, reflection fii'i 2, 3) The reflectance r and J are 98% and 95 chi, respectively, but the minute area with a diameter of 1 μm at the center of the reflecting mirror ~2~ where the information light is incident has a reflectance of 90 chi. The transparency is (-4.)λ.

またクリプトンアークランフ7は約30Wの114力を
イjし、30パルス/秒でパルス発光する。該ランプ7
から発)Y、シた)Y′、はレーザロッド支4″4部材
に入射し、該部材を導?皮してイ固々のレーザロッド1
を励起する。ここで、クリプトンアークランフ゛7の出
力は、それ白瓜 休でレーザロッド1がレーザ発振を起こさない火力に十
分ii1.’i ’ltFさねなければならない。
Further, the krypton arc lamp 7 emits 114 power of approximately 30 W and emits pulse light at 30 pulses/second. The lamp 7
) Y and Y', respectively, are incident on the laser rod support 4''4 member, and guide the member to the solid laser rod 1.
excite. Here, the output of the krypton arc lamp 7 is sufficient to have enough firepower to prevent the laser rod 1 from causing laser oscillation.ii1. 'I 'ltF have to do it.

次に本実施例における−)を増幅方法を説明する。Next, the method of amplifying -) in this embodiment will be explained.

まず画像情報を含んだ4i腎報)Y; 10を赤外フー
イルタ9を介して入射させ、レンズアレイ5によってレ
ーザロッドアレイに結像させる。該レーザロッドアレイ
を構成する個々のレーザロッド1はクリプトンアークラ
ンプ7からの励起)しによって励起され、情報光の照射
によって、前記画像情報に従ってレーザ発振を起こす。
First, a 4i kidney report (Y; 10) containing image information is made incident through an infrared filter 9 and imaged onto a laser rod array by a lens array 5. The individual laser rods 1 constituting the laser rod array are excited by the excitation from the krypton arc lamp 7, and are irradiated with information light to cause laser oscillation in accordance with the image information.

このようにして’に94放出によって増幅された画体情
報を含む光がレーザロッドアレイから出力され撮像素子
6によって′T1気信号に変換される。このように本実
施例によって解像度10本/m+r+、利得20〜ろO
dBの光増幅装置が14)られる。本実施例におし・て
励起九酌としてクリプトンアークランプの代わりに発光
ダイオード等を用いてもよ(・。また本実施例において
九必四に応じて増幅部のレーザロッドアレイを多段にし
て更に増幅度を−4−げることも可能である。
In this way, the light containing image information amplified by the '94 emission is output from the laser rod array and converted into a 'T1 signal by the image pickup device 6. In this way, according to this embodiment, the resolution is 10 lines/m+r+ and the gain is 20 to 0.
dB optical amplification device 14). In this embodiment, a light emitting diode or the like may be used instead of the krypton arc lamp as the excitation source. It is also possible to further increase the degree of amplification by -4.

次に第4図、第5図で本発明に基づく光増幅装置の第2
実施例を説明する。
Next, FIGS. 4 and 5 show the second embodiment of the optical amplification device based on the present invention.
An example will be explained.

第4図は本実施例に用いろ半2!ケ体レーザアレイの概
略を示す図である。ここで該半導体レーザアレイはGa
As 、 GaA6Asから成るストライプ型半導体レ
ーザをピッチ10011 mでアレイ状に配置した+ もので、11は正電(イti、1’lは絶縁層、115
tiP型””ASt 141d P型(3aA、6As
 、 15はGaAs (活性In)、16はn型Ga
AdA、s 、 17はn型(3aAs、18け負電極
である。この半導体レーザアレイは″電極11.17間
に電流を流すことによって個々の半導体レーザが励起さ
れ、この励起電流を増していくと活性領域19でレーザ
発振が起こり、レーザアレイを発する。本実施例に用い
る場合には、励起′屯流目、それ自体でレーザ発振を起
こさな(・ようにM4整され、該半導体レーザアレイに
照射される情報)C1によって始めてルーザウY、が肪
導され、該情報光に含まれろ両イす(i’i報が増幅さ
れる。
Figure 4 is used in this example! FIG. 2 is a diagram schematically showing a laser array. Here, the semiconductor laser array is Ga
Stripe-type semiconductor lasers made of As, GaA6As are arranged in an array with a pitch of 10011 m, where 11 is a positive electrode (iti), 1'l is an insulating layer, and 115
tiP type""ASt 141d P type (3aA, 6As
, 15 is GaAs (active In), 16 is n-type Ga
AdA, s, 17 is an n-type (3aAs, 18 times negative electrode).This semiconductor laser array is designed so that the individual semiconductor lasers are excited by passing a current between the electrodes 11 and 17, and this excitation current is increased. Laser oscillation occurs in the active region 19, causing the laser array to emit light.When used in this embodiment, the excitation flow itself does not cause laser oscillation. The information irradiated on the information beam) C1 first guides Ruthau Y, and the information contained in the information light is amplified.

第51ネ1に本実施例の構成の概略を示す。第51文j
にス・ツいて、画1埃情報を含んだ情報光20は・・−
フミラー30を透通し、赤外透過フィルタ29を経て”
F if+iレンズ25により第4図に示したような半
7!一体レーザアレイ21上に結像する。ここで平面レ
ンズ25は、BK7ガラスにイオン交換法によj7T1
gOをドーグして三次元屈折率分布を有さしめたもので
あり、2次元アレイ状に100μInピツチでレンズ部
分を配置し7ている。またこの平曲レンズ25の各レン
ズ部分の焦点は半導体レーザアレイ21の帛4]閃に示
した活性領域19に夫々対応している。半導体レーザア
レイ21の各レーザ妨、質は誘2!F、放出を起こすス
レッシュホールドli blf、よりも石干低し・値の
電流により励起されている。この半導体レーザアレイ2
1に入射した情報光20は、その画像情報に従って各々
のlT’j性領域でレーザ発振を話者し、増幅されて出
力、)Y、 22となって射出されろ。該出力光22は
丙び平向レンズ25゜赤外透j1ハフィルタ29を透ノ
^゛Δし、ノ・−7ミラー60によって反射されてCC
I) 26に導かれ電気信号に変換される。本実施例で
は情報光として赤外透過フィルタ29を、’r’+’1
過した波長1゜2μmの赤外光を用い、ハロゲンランプ
等によって照明された物体からの反射光を増幅する目的
に適しているが、半導体レーザの材料等を変化さ・ヒる
ことによって異なった波長の光に対しても好適な光増I
lq’<装置tQを構成できる。
The 51st page 1 shows an outline of the configuration of this embodiment. Sentence 51 j
As a result, the information light 20 containing information on the image 1 is...
It passes through the fumirror 30 and passes through the infrared transmission filter 29.
Half 7 as shown in FIG. 4 by F if+i lens 25! An image is formed on the integrated laser array 21. Here, the plane lens 25 is made of BK7 glass using the ion exchange method.
It has a three-dimensional refractive index distribution by doogling gO, and the lens portions are arranged in a two-dimensional array with a pitch of 100 μIn. The focal point of each lens portion of the flat curved lens 25 corresponds to the active region 19 shown in Figure 4 of the semiconductor laser array 21, respectively. The quality of each laser beam in the semiconductor laser array 21 is 2! F is excited by a current with a value lower than the threshold for emission, li blf. This semiconductor laser array 2
The information light 20 incident on 1 causes laser oscillation in each lT'j characteristic region according to the image information, is amplified, and is emitted as an output, )Y, 22. The output light 22 then passes through a flat lens 25°, an infrared transmitting j1 filter 29, and is reflected by a -7 mirror 60.
I) 26 and converted into an electrical signal. In this embodiment, the infrared transmission filter 29 is used as information light.
It is suitable for the purpose of amplifying the reflected light from an object illuminated by a halogen lamp, etc., using infrared light with a wavelength of 1°2 μm. Photointensification I suitable for wavelength light
lq'<device tQ can be configured.

このように本実施例によって利#110〜2 QdH。In this way, according to this embodiment, the profit is #110 to 2 QdH.

解1辣度10本/ l11mのA′;増幅部Rが実現で
きる。また本実h’flj例はレーザ媒質として電流励
起の半導体レーザを用いているため、前述の第1実施例
と比較して、更に小型で、消a・電力の少ない装置を促
供するものでル)る。
Solution 1: A' with a sharpness of 10 lines/l11m; an amplifier section R can be realized. In addition, since this practical h'flj example uses a current-excited semiconductor laser as the laser medium, it facilitates a device that is smaller and consumes less aa and power than the first example described above. ).

前ミホの21.I41及び第2実施例にお(・て、増幅
光をCCJ)等の撮像素子で電気信号に素換する例を示
したが、本発明し」これに限らず、例えば増幅光をスク
リーンに投影して直接観、察する等、t:rt々の応用
が可11目である。
Previous Miho's 21. Although the example in which the amplified light is converted into an electrical signal using an image sensor such as a CCJ (CCJ) has been shown in I41 and the second embodiment, the present invention is not limited to this. There are 11 possible applications of t:rt, such as direct observation and observation.

以上名)ン明したように、本発明は従来の光増幅方法お
よび装jf′i、にオハ・て、高感度〜部分)管部の光
増幅を低′d1圧、低消費電力で行なう事をnJ能にす
る効果を有するものである。
As explained above, the present invention is based on the conventional optical amplification method and equipment, and it is possible to perform optical amplification in the tube section with high sensitivity and low power consumption at low pressure and low power consumption. This has the effect of making nJ possible.

牛9図山の節Jltな説明 第1図は本発明の第1実施例に用いるレーザアレイの概
略を示す図、第2図は第1実施例のレーザロッドの屈折
率分布を示す図、第6図(a)は第1実施例の(1(成
を示す概略図、第3(I9(b)は第6図(a)のAに
おける断面の概略図、Er541ヌik↓本発明のt1
〜2実施例に用いる半導体レーザアレイを示す図、第5
図は第2実施例の構成を示す概略図である。
Figure 1 is a diagram showing the outline of the laser array used in the first embodiment of the present invention, Figure 2 is a diagram showing the refractive index distribution of the laser rod of the first embodiment, Figure 6 (a) is a schematic diagram showing the (1) configuration of the first embodiment, and Figure 6 (b) is a schematic diagram of the cross section at A in Figure 6 (a).
- Figure 5 showing the semiconductor laser array used in the second embodiment
The figure is a schematic diagram showing the configuration of the second embodiment.

1−―・・・レーザロッド 2,3#・・・・反射鏡4
・・・・・レーザロッド支持部材 5・・・・・レンズ
アレイ6ゆ・・・嗜撮像素子 7・・・・・クリグトン
アークランブ8・・・・・放物面鏡 9・・・・・赤外
透ノ1カフィルタ10・・・・・情報光 出願人 キャノンぐ1、式、会71 代理人  丸 島 儀 づ、 ゛、( 2−1,’i
1--Laser rod 2,3#...Reflector 4
...Laser rod support member 5...Lens array 6...Functional image sensor 7...Crigton arc clamp 8...Parabolic mirror 9... ...Infrared transmission filter 10...Information light applicant Canon 1, ceremony, meeting 71 Representative Marushima Gizu,゛,(2-1,'i

Claims (1)

【特許請求の範囲】 (1)少(さも2個以上のレーザ媒質をアレイ状に配置
し2てルーザアし・イを構成し、該レーザアレイに画像
情報を含んだ情報光を照射して、該画像情報に従って前
記個々のレーザ媒質にレーザ発振を誘導することによっ
て前記情報光を増幅する光増幅方法。 (2)少な(とも2個以上のレーザ媒″Ilを7レイ状
に画像情報を含んだ情報−)′C1を結1寡する手段と
から成り)該画像情報に従って前記個々のレーザfI%
I質にレーザ号ら4kを計専することによってn’J 
apイrt報光を増幅するyじ増幅装置。 (ろ)前記励起手段は、前記レーザ媒質を励起光によっ
て照明する)Y;貯であるl侍r「請求のill+4囲
弔2項記載の)Y、増幅性jl/!。 (4)前記レーザ媒質は該レーザ媒質と異なった屈折率
を有する部材によって支持され、前記励起光が該部材中
を導波して該レーザ媒質を照明する特許請求のflfl
)四と443項記載の光増幅装置。 (5)前記レーザ媒質が半導体から成り、前記励起手段
が該レーザ媒質に電流を流す手段である特許Hfi求の
範囲第2項記載の光増幅装置。
[Claims] (1) arranging two or more laser media in an array to form a loser, and irradiating the laser array with information light containing image information; An optical amplification method for amplifying the information light by inducing laser oscillation in the individual laser media according to the image information. (2) A method of amplifying the information light by inducing laser oscillation in the individual laser media according to the image information. and means for increasing or decreasing the image information)'C1;
n'J by exclusively planning Laser No. 4K in I quality
yji amplification device that amplifies the ap irt signal. (b) The excitation means illuminates the laser medium with excitation light)Y; the amplification property jl/! The medium is supported by a member having a refractive index different from that of the laser medium, and the excitation light is guided through the member to illuminate the laser medium.
) The optical amplification device described in paragraphs 4 and 443. (5) The optical amplification device according to item 2 of the patent application, wherein the laser medium is made of a semiconductor, and the excitation means is means for passing a current through the laser medium.
JP14310882A 1982-08-17 1982-08-17 Light amplifying method and device Pending JPS5932189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14310882A JPS5932189A (en) 1982-08-17 1982-08-17 Light amplifying method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14310882A JPS5932189A (en) 1982-08-17 1982-08-17 Light amplifying method and device

Publications (1)

Publication Number Publication Date
JPS5932189A true JPS5932189A (en) 1984-02-21

Family

ID=15331088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14310882A Pending JPS5932189A (en) 1982-08-17 1982-08-17 Light amplifying method and device

Country Status (1)

Country Link
JP (1) JPS5932189A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232673A (en) * 1985-07-31 1987-02-12 イ−スト チヤイナ インスチチユ−ト オブ テクノロジイ Sequence pulse solid laser and transient holography apparatus using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232673A (en) * 1985-07-31 1987-02-12 イ−スト チヤイナ インスチチユ−ト オブ テクノロジイ Sequence pulse solid laser and transient holography apparatus using the same

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