JPS5932074B2 - Manufacturing method of piezoelectric ceramics - Google Patents

Manufacturing method of piezoelectric ceramics

Info

Publication number
JPS5932074B2
JPS5932074B2 JP54093021A JP9302179A JPS5932074B2 JP S5932074 B2 JPS5932074 B2 JP S5932074B2 JP 54093021 A JP54093021 A JP 54093021A JP 9302179 A JP9302179 A JP 9302179A JP S5932074 B2 JPS5932074 B2 JP S5932074B2
Authority
JP
Japan
Prior art keywords
piezoelectric ceramic
piezoelectric
piezoelectric ceramics
temperature
pbzro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54093021A
Other languages
Japanese (ja)
Other versions
JPS5617089A (en
Inventor
正光 西田
俊一郎 河島
一朗 上田
宏 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54093021A priority Critical patent/JPS5932074B2/en
Priority to EP79302828A priority patent/EP0012583B1/en
Priority to DE7979302828T priority patent/DE2966690D1/en
Publication of JPS5617089A publication Critical patent/JPS5617089A/en
Publication of JPS5932074B2 publication Critical patent/JPS5932074B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • C04B35/493Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Description

【発明の詳細な説明】 本発明は圧電磁器の製造方法に関するものであり、圧電
特性に優れ、フィルタ、超音波振動子などに適した磁器
材料を提供する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing piezoelectric ceramics, and provides a ceramic material that has excellent piezoelectric properties and is suitable for filters, ultrasonic vibrators, and the like.

従来より、Pb(BIANbl−A)Os−PbTi0
3−PbZr03(ただし、Aが1/3のときにけB1
がMg、Zn、Cd、Sn、Fe、Co、Ni、Aが1
/4のときにはB1がLi、Cuである)および、Pb
(B2BNbl−B)Os−Pb(B3CNbl−C)
Os−PbTi03−PbZr03(ただし、Bまたは
Cが1/3のときにけB2またはB3がMg、Zn、C
d、Sn、Fe、Co、Niのいずれかであり、Bまた
はCが1/4のときにはB2またはB3がLi3Cuの
いずれかであわ、B2とB3は異なつた元素である)系
の圧電磁器およびこれに添加物を加えた材料などがあわ
、広く使用されている。
Conventionally, Pb(BIANbl-A)Os-PbTi0
3-PbZr03 (However, when A is 1/3, B1
is Mg, Zn, Cd, Sn, Fe, Co, Ni, A is 1
/4, B1 is Li, Cu) and Pb
(B2BNbl-B)Os-Pb(B3CNbl-C)
Os-PbTi03-PbZr03 (However, when B or C is 1/3, B2 or B3 is Mg, Zn, C
d, Sn, Fe, Co, Ni, and when B or C is 1/4, B2 or B3 is Li3Cu, and B2 and B3 are different elements) piezoelectric ceramics and Materials with additives added to these are widely used.

本発明の方法はかかる磁器の圧電性の改善に関するもの
であり、圧電磁器を焼成した後、500〜800℃の範
囲内の温度で熱処理することを特徴とするものであわ、
これにより圧電特性を著しく改善することができる。本
発明の方法にもとづいて加熱処理された圧電磁器は無処
理のものに比べて、電気機械結合係数kpおよびktが
それぞれ1〜8%、2〜8%増加する。なお、ここで上
記圧電磁器は次の組成のものを普通焼成およびホットプ
レス焼結のいずれかを行なつたものである。
The method of the present invention relates to improving the piezoelectricity of such porcelain, and is characterized in that after firing the piezoelectric porcelain, it is heat-treated at a temperature within the range of 500 to 800°C.
This allows the piezoelectric properties to be significantly improved. The electromechanical coupling coefficients kp and kt of piezoelectric ceramics heat-treated according to the method of the present invention increase by 1 to 8% and 2 to 8%, respectively, compared to untreated piezoelectric ceramics. Here, the piezoelectric ceramic has the following composition and is subjected to either normal firing or hot press sintering.

〔1〕Pb(Znハ Nb% )Os−PbTi03一
PbZrO3で示される基本組成に、MnO2を添加成
分として含ませてなる圧電磁器。
[1] A piezoelectric ceramic in which MnO2 is included as an additive component in the basic composition shown by Pb(ZnHaNb%)Os-PbTi03-PbZrO3.

C〕Pb(Znハ Nb% )Os−Pb(SnハNb
2/3)Os−PbTi03−PbZr03(ただし、
Pbの20原子%以下をSrで置換したもの)で示され
る基本組成に、MnO2を添加成分として含ませてなる
圧電磁器。
C] Pb (Zn) Nb% Os-Pb (Sn)
2/3) Os-PbTi03-PbZr03 (however,
A piezoelectric ceramic comprising MnO2 as an additive component in a basic composition represented by Pb (20 atomic % or less of Pb is replaced with Sr).

れる圧電磁器。piezoelectric ceramic.

以下実施例により本発明を詳しく説明する。The present invention will be explained in detail below with reference to Examples.

市販原料を第1表に示した組成になるように秤量した後
、混合し、さらに混合物を約850℃で2時間仮焼した
。その後、粉砕した粉体から直径13mm1厚さ1詣程
度の円板を成形し、それをアルミナ質の容器に入れて、
1250〜1280をCの範囲内の温度で約60分間焼
成する方法で普通焼成を行なつた。また、仮焼後粉砕し
た粉体から直径30顛厚さ17mmの円板を成形し、そ
れを、1250℃で2001<9/C7lの圧力を4時
間炭化珪素質モールド中で印加しながら焼結する方法で
ホツトプレス焼結を行なつた。普通焼成およびホットプ
レス焼結を行なつた磁器を、500〜800℃の範囲内
の温度に保持して熱処理を行なつた。
Commercially available raw materials were weighed and mixed to have the composition shown in Table 1, and the mixture was calcined at about 850° C. for 2 hours. After that, a disk with a diameter of 13 mm and a thickness of about 1 mm is formed from the crushed powder, and it is placed in an alumina container.
Normal firing was carried out by firing at a temperature in the range of 1250 to 1280 C for about 60 minutes. In addition, a disk with a diameter of 30 mm and a thickness of 17 mm was formed from the powder crushed after calcination, and sintered at 1250°C while applying a pressure of 2001<9/C7l for 4 hours in a silicon carbide mold. Hot press sintering was performed using the following method. Porcelain that had been subjected to normal firing and hot press sintering was heat treated while being maintained at a temperature within the range of 500 to 800°C.

熱処理後、普通焼成した磁器については厚さ0.3詣に
研摩した。一方、ホツトプレスした磁器については直径
8顛、厚さ0.3mmの円板に加工した。
After heat treatment, the normally fired porcelain was polished to a thickness of 0.3 mm. On the other hand, the hot-pressed porcelain was processed into a disk with a diameter of 8 pieces and a thickness of 0.3 mm.

それぞれに金電極を蒸着したのち、100℃のシリコン
オイル中で3〜5kV/11Tfflの直流電界を30
分間印加して、試料を作製した。その後、これらの試料
につき電気機械結合係数KpとKt?1定した。測定結
果を下表に示した。比較のため、未処理の試料の特性も
同時に示した。
After depositing a gold electrode on each, a DC electric field of 3 to 5 kV/11 Tffl was applied for 30 minutes in silicone oil at 100°C.
A sample was prepared by applying the voltage for a minute. Then, for these samples, the electromechanical coupling coefficients Kp and Kt? It was fixed at 1. The measurement results are shown in the table below. For comparison, the characteristics of an untreated sample are also shown.

上記実施例から明らかなように、焼成後に磁器を500
〜800℃の範囲内の温度で熱処理しているので、未処
理のものに比べて、電気機械結合係数Kt,k,が向上
している。
As is clear from the above examples, after firing, the porcelain was
Since it is heat treated at a temperature within the range of ~800°C, the electromechanical coupling coefficient Kt,k is improved compared to the untreated one.

な}、熱処理温度が500℃よりも低いと、電気機械結
合係数の向上に対して熱処理の効果があまりなく、また
それが800℃を超えると、熱処理に高い温度を必要と
することから経済的でない。熱処理温度が500〜80
0℃の範囲内であれば、熱処理を比較的低い温度で実施
できるだけでなく、それに要する時間も60時間もしく
はそれよりも短い時間でよいため、工業的に実施する上
で非常に有利である。上記実施例では代表的な組成の試
料を示したが、上述の(1)〜(4)で示した試料であ
ればいずれについても、同様の効果を得ることができる
。以上のように、本発明の製造方法によれば、結合係数
の大きい圧電特性の優れた圧電磁器を得ることができる
ものである。
} If the heat treatment temperature is lower than 500℃, the effect of heat treatment on improving the electromechanical coupling coefficient is not so great, and if it exceeds 800℃, it is not economical because a high temperature is required for heat treatment. Not. Heat treatment temperature is 500-80
If the temperature is within the range of 0°C, not only can the heat treatment be performed at a relatively low temperature, but also the time required for the treatment may be 60 hours or less, which is very advantageous for industrial implementation. Although samples with typical compositions were shown in the above examples, similar effects can be obtained with any of the samples shown in (1) to (4) above. As described above, according to the manufacturing method of the present invention, a piezoelectric ceramic having a large coupling coefficient and excellent piezoelectric properties can be obtained.

なお、本発明の改善の効果は上記の実施例のみに限定さ
れるものでなく、前述の特許請求の範囲内の他の組成物
についても、同じ改善効果が得られるものである。
It should be noted that the improvement effect of the present invention is not limited only to the above-mentioned examples, and the same improvement effect can be obtained with other compositions within the scope of the above-mentioned claims.

Claims (1)

【特許請求の範囲】 1 普通焼成もしくはホットプレス焼結して得られた圧
電磁器を500〜800℃の範囲内の温度で熱処理する
ことを特徴とする圧電磁器の製造方法。 ただし、前記圧電磁器は次の〔1〕〜〔3〕に示した組
成のいずれか一つをいう。 〔1〕Fb(Zn_1_/_3Nb_2_/_3)O_
3−PbTiO_3−PbZrO_3で示される基本組
成に、MnO_2を添加成分として含ませてなる圧電磁
器。 〔2〕Pb(Zn_1_/_3Nb_2_/_3)O_
3−P_b(Sn_1_/_3Nb_2_/_3)O_
3−PbTiO_3−PbZrO_3(ただし、Pbの
20原子%以下をSrで置換したもの)で示される基本
組成に、MnO_2を添加成分として含ませてなる圧電
磁器。 〔3〕Pb(Zn_1_/_3Nb_2_/_3)O_
3−Pb(Mn_1_/_3Nb_2_/_3)O_3
−PbTiO_3−PbZrO_3で示される圧電磁器
[Claims] 1. A method for producing piezoelectric ceramics, which comprises heat-treating piezoelectric ceramics obtained by normal firing or hot press sintering at a temperature within the range of 500 to 800°C. However, the piezoelectric ceramic has any one of the compositions shown in [1] to [3] below. [1] Fb (Zn_1_/_3Nb_2_/_3)O_
A piezoelectric ceramic made of a basic composition represented by 3-PbTiO_3-PbZrO_3 and containing MnO_2 as an additive component. [2] Pb(Zn_1_/_3Nb_2_/_3)O_
3-P_b(Sn_1_/_3Nb_2_/_3)O_
3-PbTiO_3-PbZrO_3 (However, 20 atomic % or less of Pb is replaced with Sr) A piezoelectric ceramic having MnO_2 as an additive component in the basic composition. [3] Pb(Zn_1_/_3Nb_2_/_3)O_
3-Pb(Mn_1_/_3Nb_2_/_3)O_3
-PbTiO_3-PbZrO_3 piezoelectric ceramic.
JP54093021A 1978-12-08 1979-07-20 Manufacturing method of piezoelectric ceramics Expired JPS5932074B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP54093021A JPS5932074B2 (en) 1979-07-20 1979-07-20 Manufacturing method of piezoelectric ceramics
EP79302828A EP0012583B1 (en) 1978-12-08 1979-12-07 Piezoelectric ceramic production
DE7979302828T DE2966690D1 (en) 1978-12-08 1979-12-07 Piezoelectric ceramic production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54093021A JPS5932074B2 (en) 1979-07-20 1979-07-20 Manufacturing method of piezoelectric ceramics

Publications (2)

Publication Number Publication Date
JPS5617089A JPS5617089A (en) 1981-02-18
JPS5932074B2 true JPS5932074B2 (en) 1984-08-06

Family

ID=14070823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54093021A Expired JPS5932074B2 (en) 1978-12-08 1979-07-20 Manufacturing method of piezoelectric ceramics

Country Status (1)

Country Link
JP (1) JPS5932074B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040049383A (en) * 2002-12-05 2004-06-12 주식회사 스마텍 A piezo ceramic composition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082596A (en) * 1973-11-24 1975-07-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082596A (en) * 1973-11-24 1975-07-04

Also Published As

Publication number Publication date
JPS5617089A (en) 1981-02-18

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