JPS5928345A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5928345A JPS5928345A JP13831882A JP13831882A JPS5928345A JP S5928345 A JPS5928345 A JP S5928345A JP 13831882 A JP13831882 A JP 13831882A JP 13831882 A JP13831882 A JP 13831882A JP S5928345 A JPS5928345 A JP S5928345A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- cell
- photochemical
- xenon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 3
- 239000003504 photosensitizing agent Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000001235 sensitizing effect Effects 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 10
- 229910052753 mercury Inorganic materials 0.000 description 6
- 230000005281 excited state Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- 230000005283 ground state Effects 0.000 description 2
- 208000017983 photosensitivity disease Diseases 0.000 description 2
- 231100000434 photosensitization Toxicity 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は化学気相反応を用いて膜を形成する装置に関し
、特に、光照射下での膜を形成する方法に関している。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for forming a film using a chemical vapor phase reaction, and particularly to a method for forming a film under light irradiation.
従来、低温で膜を形成する方法として、プラズマ化学気
相反応を用いるのが一般的であった。しかしながら、プ
ラダｉを用いた化学気相成長に於いては、膜の堆積過程
で、プラズマ中に含まれるイオン、電子等の荷電粒子や
又プラズマから発生ずるＸ線等に因る下地や堆積膜への
照射損傷を避けることが回前「であった。近年プラズマ
エネルギーに代わって、光エネルギーを用いた光化学気
相反応に依る膜形成法が提唱された。この光化学気相反
応を用いることに依シ、上述したプラズマ法に因る損傷
の問題をとシ除く仁とが可能となる。Conventionally, plasma chemical vapor phase reactions have been commonly used as a method for forming films at low temperatures. However, in chemical vapor deposition using Prada i, during the film deposition process, charged particles such as ions and electrons contained in the plasma and In recent years, instead of plasma energy, a film formation method based on a photochemical vapor phase reaction using light energy has been proposed. In addition, it is possible to eliminate the problem of damage caused by the plasma method described above.
しかしながら、反応ガスへの光照射のみでｄ、堆積速度
が著しく遅く実用に供する事が難しかった。However, simply irradiating the reaction gas with light results in an extremely slow deposition rate, making it difficult to put it to practical use.
この為に水銀蒸気を光増感剤として使用し、堆積水銀蒸
気を光増感剤として用いる製造方法によると、非常に微
量ではあるが堆積膜に水銀原子が入シ込み、それが膜質
の低下の要因となるという欠点や、又、水銀は有′Ｒ物
質であシ光増感剤として使用した水銀の処理法が難しく
かつ面倒であるという欠点がある。For this reason, mercury vapor is used as a photosensitizer, and according to the production method that uses deposited mercury vapor as a photosensitizer, mercury atoms enter the deposited film, albeit in a very small amount, resulting in a decrease in film quality. Another drawback is that mercury is an R-containing substance and the method for treating mercury used as a photosensitizer is difficult and troublesome.
本発明の目的は、上記問題を除去し良質の堆ｆＩ（膜を
陸産的に形成する為の方法を提供することにある。An object of the present invention is to eliminate the above-mentioned problems and provide a method for producing a high-quality FI film on land.
木兄ツＪの特徴は、光化学気相反応によシ堆積膜を形成
する際にキセノンガスを光増感剤として用い、発光体に
キセノンガスを含む光源を用いることを特徴とする。キ
セノンガスは、不活性ガスでありそのだめ堆積膜に微景
にはいったとしても、水銀の場合の様に膜質の低下をひ
きおとす事はない。さらに、光増感剤として使用したキ
セノンガスの後処理も水銀の場合の様に困）１１Ｇでｌ
−，１：なく、使用し易い利点がある。Kientsu J is characterized by using xenon gas as a photosensitizer when forming a deposited film by photochemical vapor phase reaction, and by using a light source containing xenon gas as a light emitter. Xenon gas is an inert gas, so even if it enters the deposited film, it will not reduce the quality of the film as it does with mercury. Furthermore, the post-treatment of the xenon gas used as a photosensitizer is also difficult as in the case of mercury).
-, 1: None, which has the advantage of being easy to use.
キセノンガスを光化学増感剤として使用して、例えば、
Ｓ目−１４とＮ２０を反応ガスに用い、５１０２膜を堆
積する際の反応過程は以下の通りである。Using xenon gas as a photochemical sensitizer, e.g.
The reaction process when depositing the 5102 film using S-14 and N20 as reaction gases is as follows.
（１）Ｘ・（基底状態）」ｙ−＞Ｘ・（励起状態）（２
） Ｎ２０ ＋Ｎａ （励起状態）→Ｎ２−１−０
（励起状μｊｌ ） ＋Ｎａ （基底状態）
（３） Ｓ＋ １．Ｔ ４−Ｆ ２０ （励起状態）
−＞ ８ ｉ ０２↓」−２１■２
ここで、光増感に主に開力しているＸｅの励起状態は、
λ＝ｚｓ９．ｉｉのものと考えられる。(1) X・(ground state)”y−>X・(excited state)(2
) N20 +Na (excited state) → N2-1-0
(Excited state μjl) +Na (ground state) (3) S+ 1. T 4-F 20 (excited state)
-> 8 i 02↓"-21■2 Here, the excited state of Xe that is mainly active in photosensitization is
λ=zs9. It is thought to be from ii.
次に、実施例に基づき図面を用いて説明する。Next, an explanation will be given based on an example using drawings.
第１図は本実施例に用いたガスハンドリング系および反
応セルの概要を示す。第１図において、反応セル１は、
λ＝２８９４人の紫外光を透過するように石英管を用い
ており、ガスノ・ンドリング系はパイレックスガラスを
用いている。まず、膜を堆積する基板２を反応セル１に
導入後ｓｂ合わせ部３を閉じ、パルプ４．パルプ５およ
びパルプ（３ａ。FIG. 1 shows an overview of the gas handling system and reaction cell used in this example. In FIG. 1, the reaction cell 1 is
A quartz tube is used to transmit ultraviolet light of λ=2894, and Pyrex glass is used for the gas-no-end ring system. First, after introducing the substrate 2 on which a film is to be deposited into the reaction cell 1, the sb mating section 3 is closed, and the pulp 4. Pulp 5 and Pulp (3a.
６ｂ 、５ｃを開き、反応セル１全体を赤外ランプ１０
で２００°Ｃに加熱し、クライオポンプで約１０分間排
気しパルプ４を閉じ反応セル１全体を１００°Ｃの温度
に降下させる。その後、パルプ５ ａ 、６ｂ。6b and 5c are opened, and the entire reaction cell 1 is illuminated with an infrared lamp 10.
The reaction cell 1 is heated to 200°C, evacuated for about 10 minutes using a cryopump, the pulp 4 is closed, and the temperature of the entire reaction cell 1 is lowered to 100°C. Then pulp 5a, 6b.
６Ｃを閉じ、パルプ７ａ、７ｂ、７Ｃを開いて、ストレ
ージベッセル３ａ、８ｂ、８ｃに８ｉＨ，ガス、Ｎ２０
ガスおよび光化学増感剤のキセノンガスをそれぞれ導入
し、パルプ７ ａ 、 ７１） 、 ７ ｃを閉じ、パ
ルプ６ａ、６ｂ、６ｃを開き反応セル１にそれぞれのガ
スを導入してパルプ５を閉じる。Close 6C, open pulp 7a, 7b, 7C, and add 8iH, gas, N20 to storage vessels 3a, 8b, 8c.
A gas and xenon gas as a photochemical sensitizer are respectively introduced, and the pulps 7a, 71) and 7c are closed.The pulps 6a, 6b and 6c are opened and the respective gases are introduced into the reaction cell 1, and the pulp 5 is closed.
この時点において、５ｉｌｌ、ガスは１５ ’Ｊ”ｏｒ
ｒ、Ｎ２０ｊＪスはＩ Ｑ Ｔｏｒｒおよび光化学増感
剤のキセノンガスは５’ｌ’ｏｒｒになる様、それぞれ
のストレージベッセルの体積であらかじめ調整されてい
る。ここで、光増感剤としてのキセノンガスの分圧を５
１’ ｏ ｒ ｒと高くしている理由は、キセノン原子
の増感作用が水銀原子に比べ小さく、水銀の場合１Ｏ−
３Ｔｏｒｒで充分であるのに対し、キセノンガスの場合
５１’ｏｒｒ以上にしないと増感効果がみられない小実
圧基づくものである。次に基板２の幅度−１１００℃の
状態のま咬で反応セル１に５００Ｗの発光体にキセノン
を含む光源９によシ光を照射し、硅素酸化膜の」ｆｌ・
積を行なった。At this point, 5ill, gas is 15'J”or
r, N20jJ, IQ Torr, and photochemical sensitizer xenon gas were adjusted in advance according to the volumes of the respective storage vessels so that the xenon gas was 5'l'orr. Here, the partial pressure of xenon gas as a photosensitizer is 5
The reason for the high value of 1'o r r is that the sensitizing effect of xenon atoms is smaller than that of mercury atoms, and in the case of mercury, 1O-
While 3 Torr is sufficient, in the case of xenon gas, the sensitizing effect is not seen unless the pressure is 51' or more, which is based on the small actual pressure. Next, with the width of the substrate 2 at -1100°C, the reaction cell 1 is irradiated with light from the light source 9 containing xenon as a 500W light emitter, and the silicon oxide film is
I did the product.
以上の様にして形成した硅素酸化膜を用いて、Ｍ０８型
↑；２Ｊ造を作り、Ｃ−Ｖ特性を従来の水銀光増感法に
よる硅素酸化膜を用いたものと比較したととろ、同波数
分散が少なく特性の再現性も良く、又ヒステリシスも少
ない良好な結果を？’）ることかできた。Using the silicon oxide film formed as described above, a M08 type ↑; 2J structure was fabricated, and the C-V characteristics were compared with those using a silicon oxide film formed by the conventional mercury photosensitization method. Good results with low dispersion, good reproducibility of characteristics, and low hysteresis? ') I was able to do that.
以上の様に木兄Ｆ！ＩＪは、低温で良質の堆積膜を量産
的に形成するのに役立つものである。As mentioned above, Ki-ni-F! IJ is useful for mass-producing deposited films of high quality at low temperatures.
尚、本実施例においては反応ガスとして５ＩＨ４とＮ２
０ を用い、硅素酸化膜を形成したが反応ガスとして
Ｓ目■４とＮ１．Ｉ３ を用い良質の硅素窒化膜を反
応ガスとして５ＩＩＩ４のみを用いることにより、良質
の非晶質硅素膜を光増感剤としてキセノンガスを用いる
ことによシ、量産的に形成することが可能である。In this example, 5IH4 and N2 are used as the reaction gases.
0 was used to form a silicon oxide film, but the reaction gases were S4 and N1. By using I3 and only 5III4 as a high quality silicon nitride film as a reaction gas, it is possible to form a high quality amorphous silicon film in mass production by using xenon gas as a photosensitizer. be.
尚、第１図において１・・・・・・反応セル、２・・・
・・・基板、３・・・・・・磨υ合わせ、４，５，６．
７・・・・・・パルプ、８・・・・・・ストレージベッ
セル、９・・印・発光体にキセノンを含む光源、１０・
・・・・・反応セル１を加熱する赤外ラングである。In addition, in FIG. 1, 1... reaction cell, 2...
...Substrate, 3...Polishing, 4, 5, 6.
7...Pulp, 8...Storage vessel, 9...Mark, light source containing xenon in the luminous body, 10...
...This is an infrared rung that heats the reaction cell 1.
Claims (2)
素窒化膜等の絶縁膜、あるいは非晶質硅素膜を形成する
工程において、光化学増感剤としてキセノンガスを用い
、発光体にキセノンガスを含む光源を用いることをｌ時
機とする半導体装置の製造方法。(1) In the process of forming an insulating film such as a silicon oxide film, a silicon nitride film, or an amorphous silicon film on a substrate by photochemical vapor phase reaction, xenon gas is used as a photochemical sensitizer, and a luminescent material is used. A method of manufacturing a semiconductor device using a light source containing xenon gas.
の製造方法において、光増感剤のキセノンガスを５ Ｔ
ｏｒｒ以上で用いることを特徴とする半導体装置の製造
方法。(2) Scope of Patent No. 811 In the method for manufacturing a semiconductor device described in item 1, xenon gas as a photosensitizer is
A method for manufacturing a semiconductor device, characterized in that it is used at orr or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13831882A JPS5928345A (en) | 1982-08-09 | 1982-08-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13831882A JPS5928345A (en) | 1982-08-09 | 1982-08-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5928345A true JPS5928345A (en) | 1984-02-15 |
Family
ID=15219089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13831882A Pending JPS5928345A (en) | 1982-08-09 | 1982-08-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928345A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140175A (en) * | 1984-12-13 | 1986-06-27 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPS61144014A (en) * | 1984-12-17 | 1986-07-01 | Semiconductor Energy Lab Co Ltd | Thin film formation |
| US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| EP0289963A1 (en) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Apparatus for, and methods of, obtaining the movement of a substance to a substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124401A (en) * | 1975-04-23 | 1976-10-29 | Sony Corp | Regenerative apparatus in stereophonic system |
-
1982
- 1982-08-09 JP JP13831882A patent/JPS5928345A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124401A (en) * | 1975-04-23 | 1976-10-29 | Sony Corp | Regenerative apparatus in stereophonic system |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140175A (en) * | 1984-12-13 | 1986-06-27 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPS61144014A (en) * | 1984-12-17 | 1986-07-01 | Semiconductor Energy Lab Co Ltd | Thin film formation |
| US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| JPH01500444A (en) * | 1986-07-25 | 1989-02-16 | ヒユーズ・エアクラフト・カンパニー | Photochemical vapor deposition method with increased oxide layer growth rate |
| JPH0219189B2 (en) * | 1986-07-25 | 1990-04-27 | Hughes Aircraft Co | |
| EP0289963A1 (en) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Apparatus for, and methods of, obtaining the movement of a substance to a substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4371587A (en) | Low temperature process for depositing oxide layers by photochemical vapor deposition | |
| JPS6324923B2 (en) | ||
| JPH03286531A (en) | Formation of silicon oxide film | |
| JP2752235B2 (en) | Semiconductor substrate manufacturing method | |
| JPS5928345A (en) | Manufacture of semiconductor device | |
| JPS60117711A (en) | Forming apparatus of thin film | |
| JPS60117712A (en) | Forming method of thin film | |
| JPS5982732A (en) | Manufacture for semiconductor device | |
| JPS63317676A (en) | Production of thin metallic compound film having non-grained structure | |
| JPH07118854A (en) | Formation of silicon carbide film | |
| JPS634454B2 (en) | ||
| JPH04111362A (en) | Thin-film transistor and its manufacture | |
| JPS5994829A (en) | Manufacture of semiconductor device | |
| JPH01152631A (en) | Formation of sixoynz insulating film | |
| JPS63317675A (en) | Plasma vapor growth device | |
| JPS63258016A (en) | Manufacture of amorphous thin film | |
| JPS6050168A (en) | Production of thin solid film by photo cvd method | |
| JPH04105314A (en) | Manufacture of amorphous silicon | |
| JPS62180074A (en) | Formation of deposited film by plasma cvd method | |
| JPS60211847A (en) | Forming method of insulating film | |
| JPS61119028A (en) | Photo-chemical vapor deposition equipment | |
| JPH0420982B2 (en) | ||
| JPS6193630A (en) | Manufacture of silicon dioxide film | |
| JPS6125213B2 (en) | ||
| JPS61281872A (en) | Formation for amorphous silicon germanium film |