JPS5926277A - Production of thermal head - Google Patents
Production of thermal headInfo
- Publication number
- JPS5926277A JPS5926277A JP57135932A JP13593282A JPS5926277A JP S5926277 A JPS5926277 A JP S5926277A JP 57135932 A JP57135932 A JP 57135932A JP 13593282 A JP13593282 A JP 13593282A JP S5926277 A JPS5926277 A JP S5926277A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- gold
- photoresist
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000005299 abrasion Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000010931 gold Substances 0.000 abstract description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052737 gold Inorganic materials 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 5
- 229910001120 nichrome Inorganic materials 0.000 abstract description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 13
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
に電極構造を改良した薄膜型サーマルヘソドの製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film type thermal hesode with an improved electrode structure.
サーマルヘッドには、例えば第1図に示されるように、
セラミック基板1の表面にその長手方向に沿って形成さ
れた発熱抵抗体2に接して、その一方の側に駆動回路に
接続される駆動用電極3、他方の側に共通電極4が形成
されたもの、あるいは第2図に示されるように、発熱抵
抗体2の両側に駆動用電極3と共通電極4が適当な単位
で交互に繰り返して配列されるように形成されたものな
どがある。5は発熱抵抗体の露出部シの全てと、駆動用
電極3の一部及び共通電極4の一部を含む領域に形成さ
れた保護膜と耐摩耗層との2層構造(以下耐摩耗層等と
いう)である。The thermal head includes, for example, as shown in FIG.
A driving electrode 3 connected to a driving circuit was formed on one side of the ceramic substrate 1, and a common electrode 4 was formed on the other side, in contact with a heating resistor 2 formed along the longitudinal direction on the surface of the ceramic substrate 1. Alternatively, as shown in FIG. 2, driving electrodes 3 and common electrodes 4 are alternately arranged on both sides of a heating resistor 2 in appropriate units. Reference numeral 5 denotes a two-layer structure of a protective film and a wear-resistant layer (hereinafter referred to as the wear-resistant layer) formed on the entire exposed portion of the heating resistor, a part of the driving electrode 3, and a part of the common electrode 4. etc.).
駆動用電極3と駆動回路との接続はテープキャリア方式
などの方法を用いてボンディングにより行なわれ、壕だ
共通電極4には大電流が流れる。The driving electrode 3 and the driving circuit are connected by bonding using a method such as a tape carrier method, and a large current flows through the trench common electrode 4.
ところで、薄膜型サーマルヘッドは薄膜形成技術により
製造されるので駆動用電極3や共通電極4のような電極
はせいぜい1〜211mの厚さであり、あまり厚く形成
することができない。そのため、駆動用電極3へのボン
ディングの強度が弱く、また共通電極4に十分な電流を
流すことができない問題がある。By the way, since the thin film type thermal head is manufactured by thin film forming technology, the electrodes such as the driving electrode 3 and the common electrode 4 have a thickness of 1 to 211 m at most, and cannot be formed very thick. Therefore, there is a problem that the strength of bonding to the drive electrode 3 is weak and that sufficient current cannot flow through the common electrode 4.
そこで本出願人はこのようなサーマルヘッドにおいて、
更に耐摩耗層等5をマスクとして、露出し2ている電極
上にメッキにより金層を厚く付着させることにより上記
問題を解決する技術を開発し、既に出願した。その方法
により製造されるサーマルヘッドの一例の断面図は、第
3図に示されるように、セラミック基板1上に発熱抵抗
体となる窒化タンタル(Ta2N)層10がパターン化
されており、その上に駆動用電極3及び共通電極4のよ
うな電像としてニクロム(NiCr)層11、金(Au
)層12及び金メッキ層13がパターン化されて形成さ
れている。駆動用電極3及び共通電極4で挾まれた領域
が発熱に寄与する発熱抵抗体パター72である。この発
熱抵抗体パターン2の上部に電極3及び4の一部の上部
を含んで保護膜としての二酸化ケイ素(si02)層1
4と耐摩耗層とL7ての五酸化タンタル層(’l’a2
0s ) 15が形成されている。そしてこれら耐摩耗
層等5の外側の電極3及び4上には金層16がメッキに
より形成されている。メッキによる金層16は厚く形成
できるので」二記の問題が解決でき、しかもこの方しか
しながら、この方法では駆動用電極3のボンディング部
以外の他の広い領域にも金が付着するため金の消費量が
多くなり、コストアップにつながる問題がある。寸だ保
護膜】4及び耐摩耗層15はマスクスパッタリング法で
形成するだめ通常その端部17は急峻ではなく、なだら
かな勾配をもつ。そのだめ駆動用電極3のパターン上で
耐摩耗層等5がなだらかに変化する部分、所謂だれ、の
部分では駆動用電極3のパター7のエツジ部にGってメ
ッキか0・げ状に成長し、この0・げ状の金メッキ層か
剥れ、電極間に何着して%極間で短絡が生じる問題もあ
る。Therefore, in such a thermal head, the present applicant
Furthermore, we have developed a technique to solve the above problem by plating a thick layer of gold onto the exposed electrodes 2 using the wear-resistant layer 5 as a mask, and have already filed an application. As shown in FIG. 3, a cross-sectional view of an example of a thermal head manufactured by this method includes a patterned tantalum nitride (Ta2N) layer 10 serving as a heating resistor on a ceramic substrate 1; A nichrome (NiCr) layer 11 and a gold (Au
) layer 12 and gold plating layer 13 are formed in a patterned manner. The area sandwiched between the drive electrode 3 and the common electrode 4 is a heating resistor pattern 72 that contributes to heat generation. A silicon dioxide (siO2) layer 1 as a protective film is provided on the heating resistor pattern 2, including the upper part of the electrodes 3 and 4.
4, wear-resistant layer and L7 tantalum pentoxide layer ('l'a2
0s) 15 is formed. A gold layer 16 is formed on the electrodes 3 and 4 outside the wear-resistant layer 5 by plating. Since the gold layer 16 formed by plating can be formed thickly, the two problems mentioned above can be solved.However, with this method, gold adheres to a wide area other than the bonding part of the drive electrode 3, so the amount of gold consumed is reduced. There is a problem that this increases the number of times, leading to an increase in costs. Since the protective film 4 and the wear-resistant layer 15 are formed by a mask sputtering method, the ends 17 are not steep but have a gentle slope. Therefore, in the part where the wear-resistant layer 5 changes gently on the pattern of the driving electrode 3, the so-called sagging part, the edge part of the pattern 7 of the driving electrode 3 is plated with G or grows in a burr shape. However, there is also the problem that this thin gold plating layer peels off and short circuits occur between the electrodes.
本発明は、従来のサーマルヘッドの電極上に更にメッキ
により金層を形成するに当り、」二記不具合を解消する
方法を提供することを1]的とするものであって、従来
の方法によりltI摩耗摩耗層形成しまた後、耐摩耗層
等5を含み、少なくとも電極のボンディング部を除いた
領域にフォトレジスタなどのレジストの層のパターンを
形成し、このレジストパターンをマスクとして電極上に
金メッキを施すことにより上記目的を達成せんとするも
のである。An object of the present invention is to provide a method for solving the problems described in "2" in forming a gold layer by plating on the electrodes of a conventional thermal head. After forming the ltI abrasion layer, a pattern of a resist layer such as a photoresist is formed in the area including the abrasion resistant layer 5 and excluding at least the bonding part of the electrode, and using this resist pattern as a mask, the electrode is plated with gold. The aim is to achieve the above objective by applying the following.
以下本発明の一実施例について説明する。An embodiment of the present invention will be described below.
第4図(5)は耐摩耗層15捷で形成した状態を示す断
面図である。この状態までの製造工程としては、セラミ
ック基板1上に窒化タンタル層10、ニクロム層11、
金層12及び金メッキ層13を適当な手段で4層に形成
した後、フォトリソグラフィー技術によりパターン化を
行なって発熱抵抗体と電極を形成する。次に同図のよう
な領域に保護膜としての二酸化ケイ素層14と耐摩耗層
としての五酸化タンタル層15とをマスクスパッタリン
グ法により2層に形成すればよい。FIG. 4(5) is a sectional view showing a state in which the wear-resistant layer is formed by 15 layers. The manufacturing process up to this state includes a tantalum nitride layer 10, a nichrome layer 11,
After forming the gold layer 12 and the gold plating layer 13 into four layers using an appropriate method, patterning is performed using photolithography to form heating resistors and electrodes. Next, a silicon dioxide layer 14 as a protective film and a tantalum pentoxide layer 15 as a wear-resistant layer may be formed in two layers by mask sputtering in the region shown in the figure.
次にこの状態のサーマルヘッドの上面全面にフォトレジ
ストを塗布した後、マスクを介して露光し、現像して、
第4図(B)に示されるように、第2図の破線で囲まれ
るようなパターン20にフォトレジスタを残存させる。Next, after applying photoresist to the entire upper surface of the thermal head in this state, it is exposed through a mask, developed, and
As shown in FIG. 4(B), the photoresist is left in the pattern 20 surrounded by the broken line in FIG.
すなわち、この状態では駆動用電極3のボンディング部
21と共通電極4(7) −部がフォトレジスト20で
被接されずに露出していることになる。また、フ第1・
レジスト20のパターン端部22にはだれは発生[7な
い。That is, in this state, the bonding part 21 of the drive electrode 3 and the common electrode 4 (7) - part are not covered with the photoresist 20 and are exposed. Also, the first
No droop occurs at the pattern end 22 of the resist 20 [7].
次に、同図に示されているように、このフォトレジスト
パターン20をマスクとして金メッキ処理を施す。メッ
キは電極3及び4の露出部でのみ進行する。メッキ層1
6の厚さは数μm以上、例えば7層乳以上程度が好まし
い。メッキ完了後、)第1・レジスト層20を剥離液に
て除去すれば、第4図0)に示されるような共通電極4
の一部と駆動用電極3のボンディング部21の電極膜厚
が厚くなったサーマルヘッドか得られる。Next, as shown in the figure, gold plating is performed using this photoresist pattern 20 as a mask. Plating proceeds only on the exposed portions of electrodes 3 and 4. Plating layer 1
The thickness of the layer 6 is preferably several μm or more, for example, about 7 layers or more. After plating is completed, the first resist layer 20 is removed using a stripping solution to form a common electrode 4 as shown in FIG.
A thermal head is obtained in which the electrode film thickness of a part of the bonding portion 21 of the driving electrode 3 is increased.
なお、本発明は電極の一部の膜厚を厚くする方法に持仏
を有するものであるので、第4図(A)の状態までは実
施例のものに限定されないξとは言うまでもない。すな
わち、例えば、発熱抵抗体層10としては窒化タンタル
の外、ニクロム、ネサ膜その他既知の適当な利料を使用
してもよく、また、電極構造も例示の3層構造に限らず
、最上層だけが金であれば下層に他の適当な導電飼料を
使用することも可能である。さらに、耐摩耗層等5も、
例示の構造以外に、炭化ケイ素(SiC)、酸化アルミ
ニウム(AJzO3)などを用いることも可能である。Incidentally, since the present invention has a method of increasing the film thickness of a part of the electrode, it goes without saying that the state shown in FIG. 4(A) is not limited to that of the embodiment. That is, for example, as the heating resistor layer 10, other than tantalum nitride, nichrome, Nessa film, or other known suitable materials may be used, and the electrode structure is not limited to the three-layer structure illustrated, but may also include the uppermost layer. It is also possible to use other suitable conductive materials in the lower layer, provided that only gold is used. Furthermore, the wear-resistant layer etc. 5
In addition to the illustrated structure, it is also possible to use silicon carbide (SiC), aluminum oxide (AJzO3), and the like.
以上のように、本発明によればレジスト層を耐摩耗層等
より広い領域に形成し、そのレジスト層をマスクとして
電極の一部に金メッキが施されるので、金が付着する領
域が狭くなり、したがって全付着量も減少してコスト低
下全図ることができる。まだ、レジスト層が耐摩耗層等
を完全に包含し、しかもレジスト層の端部には、だれが
発生しないので、仮に耐摩耗層等の端部にだれが発生し
ていてもメッキがひげ状に成長するようなことはなく、
しだがってそのひげ状メッキ層の剥離による電極短絡な
どの不良が発生することもない。更に厚くメッキされる
領域が狭くなることとも相俟って電極間の短絡の確率も
減少し、製造歩留りを上げることができる。As described above, according to the present invention, the resist layer is formed in a wider area than the wear-resistant layer, etc., and gold plating is applied to a part of the electrode using the resist layer as a mask, so the area where gold adheres becomes narrower. Therefore, the total amount of adhesion is reduced, and the cost can be reduced. Still, the resist layer completely covers the wear-resistant layer, etc., and there is no scum at the edges of the resist layer, so even if there is some scum at the edges of the abrasion-resistant layer, the plating will not look like whiskers. There is no such thing as growing into
Therefore, defects such as electrode short circuits due to peeling of the whisker-like plating layer do not occur. Coupled with the fact that the region to be plated thicker becomes narrower, the probability of short circuit between electrodes is also reduced, and manufacturing yield can be increased.
第1図及び第2図は本発明が適用されるサーマルヘッド
のパターンの例を示す平面図、第3図は既に提案された
改良されたサーマルヘッドの発熱抵抗体近傍を示す断面
図、第4図(A)ないしくC)は本発明の工程を示す発
熱抵抗体近傍の断面図である。
1・・・セラミック基板、2・・・発熱抵抗体、3,4
・・・電極、5・・・耐摩耗層等(保護膜及び耐摩耗層
)、20・・・レジストパターン、21・・・電極のボ
ンディング部、16・・・金メッキ層。
特許出願人 株式会社 リコー
代 理 人 弁理士 青白 葆 外2名第1eA
第2図
ζ1 and 2 are plan views showing examples of patterns of a thermal head to which the present invention is applied, FIG. 3 is a sectional view showing the vicinity of the heating resistor of an improved thermal head that has already been proposed, and FIG. Figures (A) to (C) are cross-sectional views of the vicinity of the heating resistor, showing the steps of the present invention. 1...Ceramic substrate, 2...Heating resistor, 3, 4
... Electrode, 5... Wear-resistant layer etc. (protective film and wear-resistant layer), 20... Resist pattern, 21... Bonding part of electrode, 16... Gold plating layer. Patent Applicant Ricoh Co., Ltd. Agent Patent Attorney Aobai Ao and two others No. 1eA Fig. 2ζ
Claims (1)
に電極、更に上記発熱抵抗体の露出部上面及び上記電極
の一部の上面に保護膜及び耐摩耗層がそれぞれパターン
化されて形成された状態において、更に保護膜及び耐摩
耗層を含み、少なくとも上記電極のボンディングが行な
われる部分を除く領域にレジストパターンを形成し、該
レジストノくターンをマスクとして電極にメッキを施す
ことを特徴とするサーマルヘッドの製造方法。(1) A heating resistor is formed on the substrate, an electrode is formed on the upper surface of the connecting portion of the heating resistor, and a protective film and a wear-resistant layer are patterned on the upper surface of the exposed portion of the heating resistor and the upper surface of a part of the electrode, respectively. In the formed state, a resist pattern is further formed in the area including a protective film and an abrasion resistant layer and excludes at least the part where the electrode is bonded, and the electrode is plated using the resist pattern as a mask. The manufacturing method of the featured thermal head.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57135932A JPS5926277A (en) | 1982-08-04 | 1982-08-04 | Production of thermal head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57135932A JPS5926277A (en) | 1982-08-04 | 1982-08-04 | Production of thermal head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5926277A true JPS5926277A (en) | 1984-02-10 |
Family
ID=15163210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57135932A Pending JPS5926277A (en) | 1982-08-04 | 1982-08-04 | Production of thermal head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5926277A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002082474A1 (en) * | 2001-04-09 | 2002-10-17 | Vishay Dale Electronics, Inc. | Thin film resistor having tantalum pentoxide moisture barrier |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5357046A (en) * | 1976-11-02 | 1978-05-24 | Matsushita Electric Ind Co Ltd | Thin film type thermal head |
JPS55103982A (en) * | 1979-02-01 | 1980-08-08 | Matsushita Electric Ind Co Ltd | Thermal printing head and preparation therefor |
JPS5730388A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Light emitting device |
-
1982
- 1982-08-04 JP JP57135932A patent/JPS5926277A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5357046A (en) * | 1976-11-02 | 1978-05-24 | Matsushita Electric Ind Co Ltd | Thin film type thermal head |
JPS55103982A (en) * | 1979-02-01 | 1980-08-08 | Matsushita Electric Ind Co Ltd | Thermal printing head and preparation therefor |
JPS5730388A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Light emitting device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002082474A1 (en) * | 2001-04-09 | 2002-10-17 | Vishay Dale Electronics, Inc. | Thin film resistor having tantalum pentoxide moisture barrier |
US7214295B2 (en) * | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
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