JPS59231747A - Driving circuit for semiconductor laser - Google Patents

Driving circuit for semiconductor laser

Info

Publication number
JPS59231747A
JPS59231747A JP58104120A JP10412083A JPS59231747A JP S59231747 A JPS59231747 A JP S59231747A JP 58104120 A JP58104120 A JP 58104120A JP 10412083 A JP10412083 A JP 10412083A JP S59231747 A JPS59231747 A JP S59231747A
Authority
JP
Japan
Prior art keywords
semiconductor laser
disk
light emission
emission power
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58104120A
Other languages
Japanese (ja)
Inventor
Masuo Oku
万寿男 奥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58104120A priority Critical patent/JPS59231747A/en
Publication of JPS59231747A publication Critical patent/JPS59231747A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126Circuits, methods or arrangements for laser control or stabilisation

Abstract

PURPOSE:To ensure the uniform quality of reproduced information signals over the entire area of a disk by controlling the average light emission power of a semiconductor laser with the output of a potentiometer which detects the disk radius and therefore increasing said light emission power toward the outer circumference of the disk and linearly to the disk radius. CONSTITUTION:The power supply of -VEE is supplied to a potentiometer 5 from a laser driving circuit via a terminal A; while the voltage linear to the radius of a disk 1 emerges at an output terminal B as an optical head 3 moves toward the radius of the disk 1. This voltage is used to the reference voltage to decide the average light emission power of a semiconductor laser 6. Then the light emission power given from the rear face of the laser 6 is received by a photodiode 7 to obtain a current linear to the light emission power. This current is converted into the voltage by a light emission power detecting resistance 11. This voltage is used as the reference voltage. For this purpose, the light emission power of the laser 6 is controlled.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、記録可能なビデオディスクプレーヤ等、情報
の記録および再生装置における半導体レーザ駆動回路に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor laser drive circuit in an information recording and reproducing apparatus such as a recordable video disc player.

〔発明の背景〕[Background of the invention]

従来よりディスク基板上にrl+、低酸化物を蒸着して
記録薄膜を形成し、この記録薄膜上に情報イば号で変調
されたレーザ光を照射することにより前記記録薄膜の反
射率変化として情報信号を記録し、その後−足の弱いレ
ーザ光を照射し又前記記録薄膜の反射率変化を読み取り
情報を再生する装置が知られている。該装置を用いてテ
レビジョン信号を記録/再生する場合は静止画やコマ送
り再生等を行ない易くするためにディスクの回転数を1
8□00γpm iC設定し、丁度デイスり1回転分が
テレビジョン信号の1フレ一ム分に相当するようにして
いる。
Conventionally, a recording thin film is formed by vapor-depositing rl+, low oxide on a disk substrate, and by irradiating this recording thin film with a laser beam modulated by an information signal, information is recorded as a change in the reflectance of the recording thin film. There is known an apparatus that records a signal, then irradiates it with a weak laser beam, reads the change in reflectance of the recording thin film, and reproduces the information. When recording/reproducing television signals using this device, the number of revolutions of the disc should be set to 1 to facilitate still image or frame-by-frame playback.
8□00γpm iC is set so that exactly one revolution of the dial corresponds to one frame of the television signal.

また前記した記録薄膜の反射率変化は単位面積あた・り
に照射されるエネルギに太き(依存し。
Furthermore, the change in reflectance of the recording thin film mentioned above depends on the energy irradiated per unit area.

該エネルギーが小さいと反射率変化が少なくなり再生情
報信号のい劣化につながり、逆に過大であると記録ドツ
トが広がり情報信号の高次歪を増大させてしまうことが
知られている。
It is known that if the energy is too small, the change in reflectance will be small, leading to severe deterioration of the reproduced information signal, whereas if the energy is too large, the recorded dots will spread out, increasing high-order distortion of the information signal.

しかし前記したようにテレビジョン信号を記録/再生す
る装置ではディスクの回転数を一定に保っているためデ
ィスクの外周では内周よりも記録線速度が大きく、もし
ディスクの半径によらず同じレーザ光を照射すると、デ
ィスクの半径により記録条件が変化し、ディスクの全域
にわたって均一で良好な情報信号が再生できないという
問題点があった。
However, as mentioned above, in devices that record and reproduce television signals, the number of revolutions of the disk is kept constant, so the recording linear velocity is greater at the outer circumference of the disk than at the inner circumference. When irradiating the disc, the recording conditions change depending on the radius of the disc, resulting in the problem that uniform and good information signals cannot be reproduced over the entire disc.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、前記した問題点を解決し。 The object of the present invention is to solve the above-mentioned problems.

ディスクの全域にわたりおおむね同一・記録および再生
条件となるような半導体レーザ駆動回路を提供すること
にある。
It is an object of the present invention to provide a semiconductor laser drive circuit that provides approximately the same recording and reproducing conditions over the entire area of a disk.

〔発明の概要〕[Summary of the invention]

前記した目的を達成するために、本発明ではポテンショ
メータを用いてディスク半径を検出し、該ポテンショメ
ータの出力より半導体レーザの平均発光パワを制御する
回路の基準値を作成し、平均発光パワをディスク半径に
線形でかつ外周に行くにつれ増大するようにして、ディ
スクに照射される単位面積あたりの元エネルギをディス
ク全域にわたり均一となるようにする。
In order to achieve the above object, the present invention detects the disk radius using a potentiometer, creates a reference value for a circuit that controls the average light emission power of a semiconductor laser from the output of the potentiometer, and calculates the average light emission power as a function of the disk radius. The original energy per unit area irradiated onto the disk is made uniform over the entire disk area by linearly increasing the energy toward the outer periphery.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例を図を用いて説明する。 Embodiments of the present invention will be described with reference to the drawings.

第1図はディスクの内外周位置を検出する手段を示す図
であり、第2図は位置検出手段の出力電圧とディスク半
径との関係を示す図である。
FIG. 1 is a diagram showing means for detecting the inner and outer peripheral positions of the disk, and FIG. 2 is a diagram showing the relationship between the output voltage of the position detecting means and the disk radius.

1はディスク、2はディスク回転モータ、3は光学ヘッ
ド、4は光学ヘッド移動装置、5はポテンショメータで
ある。ポテンショメータ5の一端は接地されており、図
中端子Aは後述するレーザ駆動回路から一■EEの電源
が供給される。
1 is a disk, 2 is a disk rotation motor, 3 is an optical head, 4 is an optical head moving device, and 5 is a potentiometer. One end of the potentiometer 5 is grounded, and a terminal A in the figure is supplied with a power of 1EE from a laser drive circuit to be described later.

従って該位置検出手段の出力端子Bからは第2図に示す
とと(、光ヘッド6がディスクの半径方向に移動するに
伴ない、ディスクの半径に線形な電圧が現われる。
Therefore, as shown in FIG. 2, as the optical head 6 moves in the radial direction of the disk, a voltage linear in the radius of the disk appears from the output terminal B of the position detection means.

第6図は本発明によるレーザ駆動回路の具体例であり、
第4図は半導体レーザの発光パワとディスク半径との関
係を示す図である。6は半導体レーザ、7はホトダイオ
ード、8)’;j−VER電源、9はバッファ、10は
可変アッテネータ。
FIG. 6 is a specific example of a laser drive circuit according to the present invention,
FIG. 4 is a diagram showing the relationship between the light emission power of the semiconductor laser and the disk radius. 6 is a semiconductor laser, 7 is a photodiode, 8)'; j-VER power supply, 9 is a buffer, and 10 is a variable attenuator.

11は発光パワ検出抵抗、12は演算増幅器、16はL
PF 、 14は電圧−電流変換トランジスタ、15は
11 is a light emitting power detection resistor, 12 is an operational amplifier, and 16 is L.
PF, 14 is a voltage-current conversion transistor, and 15 is a voltage-current conversion transistor.

レーザ変調回路である。This is a laser modulation circuit.

始めにディスクに情報信号を記録する場合の動作につい
て説明する。前記位置検出手段の出力は図中端子Bに入
力され、バッフ−19を介し可変アッテネ−710に供
給される。可変アッテネータ10内に設けられたスイッ
チは、端子Cから供給される外部制御信号により閉じた
状態とし、即ち演算増幅器12の正相入力端子には、端
子Bから供給されている電圧が現われる。この電圧が半
導体レーザ6の平均発光パワを定める基準電圧(以下V
rgfと記す)となる。演算増幅器12 、 LPFl
 3 、電圧−電流変換トランジス釦14゜半導体レー
ザ6、ホトデイラクタ7および発光パワ検出抵抗11は
ネガテイブフードノ(ツクループを構成しており、半導
体レーザ6の後面からの発光パワをホトダイオード7で
受け、発光)くワに線形な電流を得9発光ノくワ検出抵
抗11で電圧に変換して、この電圧が前記した基準電圧
Vrafとなるように半導体レーザ6の発光ノくワを制
御して℃する。
First, the operation when recording information signals on a disc will be explained. The output of the position detecting means is input to terminal B in the figure, and is supplied to variable attenuation 710 via buffer 19. The switch provided in the variable attenuator 10 is closed by an external control signal supplied from the terminal C, that is, the voltage supplied from the terminal B appears at the positive phase input terminal of the operational amplifier 12. This voltage is the reference voltage (hereinafter referred to as V
rgf). Operational amplifier 12, LPFl
3. Voltage-to-current conversion transistor button 14° The semiconductor laser 6, the photodiode 7, and the light emitting power detection resistor 11 form a negative hood loop, and the photodiode 7 receives the light emitting power from the rear surface of the semiconductor laser 6, and emits light. ) A linear current is obtained through the hoe and converted into a voltage by the light-emitting nozzle detection resistor 11, and the light-emitting nozzle of the semiconductor laser 6 is controlled so that this voltage becomes the reference voltage Vraf described above. .

またクランプ回路、電圧−電流変換トランジスタで構成
されているレーザ変調回路15は端子りから入力される
情報信号に応じて半導体レーザ6に変調電流を流し、半
導体レーザ6の発光パワを変調させる。従って記録モー
ドにおける発光パワは第4図に示すように平均値は基準
値Vrefの変化に追従して、ディスク0)半径に線形
な関係(図中(イ))となり、また情報信号による変調
分はディスクの半径に依存せず一定なレベルを保つこと
になる。
Further, a laser modulation circuit 15 composed of a clamp circuit and a voltage-current conversion transistor causes a modulation current to flow through the semiconductor laser 6 in accordance with an information signal inputted from a terminal, thereby modulating the emission power of the semiconductor laser 6. Therefore, as shown in Figure 4, the light emitting power in the recording mode has an average value that follows changes in the reference value Vref and has a linear relationship with the disk radius ((a) in the figure), and the modulation by the information signal remains at a constant level regardless of the radius of the disk.

次に記録された情報信号を再生する場合につ゛いて説明
する。このとき可変アッテネータ10内のスイッテは端
子Cからの外部制御信号で開の・状態にされる0従って
演算増幅器12の正相入力端子の基準電圧Vrafは端
子Bから構成される装置検出手段出力を2つの抵抗で分
割することにより記録時よりも低い値に設定され、また
端子りは無人力状態であるからレーザ変調回路15を介
して半導体レーザ61Cは電流は流れず、半導体レーザ
6の発光パワは、第4図の(ロ)に示す・ように低いレ
ベルと7よる。
Next, the case of reproducing the recorded information signal will be explained. At this time, the switch in the variable attenuator 10 is opened by the external control signal from the terminal C. Therefore, the reference voltage Vraf at the positive phase input terminal of the operational amplifier 12 is set to By dividing by two resistors, the value is set lower than that during recording, and since the terminal is in an unmanned state, no current flows through the semiconductor laser 61C through the laser modulation circuit 15, and the emission power of the semiconductor laser 6 is reduced. According to 7, the level is low as shown in (b) of Fig. 4.

第4図において、Pは最内絢での記録パワ。In Figure 4, P is the recorded power at the innermost Aya.

Qは取外用での記録パワを示す。Q indicates the recording power for external use.

本実施例によるならば、ディスクの内外周によらず常に
同一条件でレーザ光を照射して情報信号の記録および再
生が行なわれることになり。
According to this embodiment, information signals are recorded and reproduced by always irradiating laser light under the same conditions regardless of the inner or outer circumference of the disk.

再生情報信号の質が均一に保たれる。The quality of the reproduced information signal is maintained uniform.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、ディスク全域にわ
たり均一で良好な画質が得られる。
As explained above, according to the present invention, uniform and good image quality can be obtained over the entire disk area.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、ディスク位置検出手段を示す構成図、第2図
は、ポテンショメータσ〕出力電圧とディスク半径との
関係を示す特性図、第3図(エレーザ駆動回路の実施例
を示す回路図、第4図は2本発明による半導体レーザの
発光)くワとディスク半径との関係を示す特性図である
。 5・・・ポテンショメータ 6・・・半導体レーザ 7・・・ホトダイオード 11・・・発光パワ検出抵抗 12・・・演算増幅器 15・・・レーザ変調回路 第  1 閉 第2画 第 31 第4図 最80  テンスクチネ%烏 時閉 ゝP
FIG. 1 is a configuration diagram showing the disk position detection means, FIG. 2 is a characteristic diagram showing the relationship between the potentiometer σ output voltage and the disk radius, and FIG. 3 is a circuit diagram showing an embodiment of the laser drive circuit. FIG. 4 is a characteristic diagram showing the relationship between the light emission of the semiconductor laser according to the present invention and the disk radius. 5...Potentiometer 6...Semiconductor laser 7...Photodiode 11...Emission power detection resistor 12...Operation amplifier 15...Laser modulation circuit 1st closed 2nd picture 31 Fig. 4-80 TEN SUKUTINE % CLOSED P

Claims (1)

【特許請求の範囲】 1、 半導体レーザを情報信号に応じて変調し、ディス
ク上に前記変調されたレーザブCを照射することにより
情報信号を記録し、その後弱いレーザ光を照射して前記
々録された情報信号の再生を行う装置の半導体レーザ駆
動回路であって半導体レーザの後面IC対向して配置さ
れた発光パワ検出用ディテクタと、該ディテクタからの
。 信号を入力として発光パワの略直流成分を基準値となる
ように制御する回路と情報信号に応じて前記半導体レー
ザの発光パワを変調する回路と、ディスクの内外周位置
を検出する手段と。 該内外周位置検出手段の出力に基づいて前記発光パワの
略直流成分を制御する回路の基準値を制御する手段にて
構成したことを特徴とする半導体レーザ駆動回路。 2、特許請求の範囲第1項記載の半導体レーザ駆動回路
であって、前記発光パワの略直流成分を制御する回路の
基準値をディスクの半径とおJ6むね線形でかつ外周方
向に対し増加する関係になるよう制御するようにしたこ
とを特徴とする半導体レーザ駆動回路。
[Claims] 1. Record the information signal by modulating a semiconductor laser according to the information signal, irradiating the modulated laser beam C onto the disk, and then irradiating the disk with a weak laser beam to record the information signal. A semiconductor laser driving circuit of a device for reproducing information signals generated by the semiconductor laser includes a detector for detecting light emitting power disposed opposite to an IC on the rear surface of the semiconductor laser, and a detector for detecting light emitting power from the detector. A circuit that inputs a signal and controls a substantially DC component of the emitted light power to a reference value, a circuit that modulates the emitted power of the semiconductor laser according to the information signal, and means for detecting the inner and outer circumferential positions of the disk. A semiconductor laser drive circuit comprising means for controlling a reference value of a circuit for controlling a substantially direct current component of the light emission power based on the output of the inner and outer circumferential position detecting means. 2. The semiconductor laser drive circuit according to claim 1, wherein the reference value of the circuit for controlling the substantially DC component of the emitted light power is in a relationship that is generally linear with the radius of the disk and increases in the direction of the outer circumference. 1. A semiconductor laser drive circuit characterized in that the semiconductor laser drive circuit is controlled so that
JP58104120A 1983-06-13 1983-06-13 Driving circuit for semiconductor laser Pending JPS59231747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104120A JPS59231747A (en) 1983-06-13 1983-06-13 Driving circuit for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104120A JPS59231747A (en) 1983-06-13 1983-06-13 Driving circuit for semiconductor laser

Publications (1)

Publication Number Publication Date
JPS59231747A true JPS59231747A (en) 1984-12-26

Family

ID=14372262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104120A Pending JPS59231747A (en) 1983-06-13 1983-06-13 Driving circuit for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS59231747A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255540A (en) * 1985-05-07 1986-11-13 Mitsubishi Electric Corp Laser emission quantity controller
JPS62241141A (en) * 1986-04-14 1987-10-21 Teac Co Optical disk recording device
US5003529A (en) * 1986-12-20 1991-03-26 Kabushiki Kaisha Toshiba Information recording and reproducing device having bias selecting means
US5586099A (en) * 1995-05-22 1996-12-17 International Business Machines Corporation Optimized laser read power based upon scan speed of optical medium and erasure characteristics of the medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255540A (en) * 1985-05-07 1986-11-13 Mitsubishi Electric Corp Laser emission quantity controller
JPS62241141A (en) * 1986-04-14 1987-10-21 Teac Co Optical disk recording device
US5003529A (en) * 1986-12-20 1991-03-26 Kabushiki Kaisha Toshiba Information recording and reproducing device having bias selecting means
US5586099A (en) * 1995-05-22 1996-12-17 International Business Machines Corporation Optimized laser read power based upon scan speed of optical medium and erasure characteristics of the medium

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