JPS59229860A - Photoelectric conversion element and manufacture thereof - Google Patents
Photoelectric conversion element and manufacture thereofInfo
- Publication number
- JPS59229860A JPS59229860A JP58090327A JP9032783A JPS59229860A JP S59229860 A JPS59229860 A JP S59229860A JP 58090327 A JP58090327 A JP 58090327A JP 9032783 A JP9032783 A JP 9032783A JP S59229860 A JPS59229860 A JP S59229860A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photoelectric conversion
- layer
- conversion element
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 12
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光電変換素子にかかり、特にファ〔従来技術
〕
最近、ファクシミリ等の画像入方部の小型化をはかるた
めに１原稿と同一寸法の長尺読取り素子の開発が活発に
行なわれている。この長尺読取り素子としては、光導電
体として非晶質シリコンを使用し、これを金属゛電極等
からなる第１電極と透光性の第２電極とで挾んだサンド
イッチ構造をもつ薄膜受光素子が、光応答性が早＜、＠
環境性に優れていることから、実用上有望である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to photoelectric conversion elements, and particularly to facsimiles [Prior Art] Recently, in order to reduce the size of the image input unit of facsimiles, etc. 2. Description of the Related Art Long reading elements are being actively developed. This long reading element uses amorphous silicon as a photoconductor, and has a thin film light-receiving structure with a sandwich structure in which it is sandwiched between a first electrode made of a metal electrode, etc., and a transparent second electrode. The element has fast photoresponsiveness<, @
It is promising for practical use because it is environmentally friendly.
しかしながら、これらの素子は、周囲の温度上昇に伴い
、素子温度が上昇すると、暗電流が増大し、信号対雑音
比（８Ｎ比）が悪（なるという不都合があった。たとえ
ば素子温度６０Ｃのときの暗電流は２５Ｃのときに比べ
２０倍以上となり、高温での使用は不可能であった。However, these devices have the disadvantage that when the device temperature rises as the ambient temperature rises, the dark current increases and the signal-to-noise ratio (8N ratio) becomes poor.For example, when the device temperature is 60C, The dark current was more than 20 times that at 25C, making it impossible to use at high temperatures.
本発明は、前記実情に鑑みてなされたもので、〔発明の
構成〕
すなわち、本発明は、透明電極と光４電体層の間に、！
極からの電荷の注入及び光導電体層内で熱的に励起され
た電荷の移動を阻止するためのブロッキング層として絶
縁層を介在せしめることにより、暗電流の温度特性を改
善しようとするものである。The present invention has been made in view of the above-mentioned circumstances. [Structure of the Invention] In other words, the present invention provides a structure between the transparent electrode and the photoquaternary layer!
This method attempts to improve the temperature characteristics of dark current by interposing an insulating layer as a blocking layer to prevent charge injection from the pole and movement of thermally excited charges within the photoconductor layer. be.
次に１本発明実施例の光電変換素子を、図面な参照しつ
つ説明する。Next, a photoelectric conversion element according to an embodiment of the present invention will be explained with reference to the drawings.
本発明実施例の光電変換素子は、第１図忙平面図、第２
図にそのＡ−Ａ断面図を示すように１絶縁性のセラミッ
ク基板ｌ上に、所定形状にパターン分割し？形成された
クロム（Ｏｒ ）電極２と、このＯｒｒ極上に形成され
た光導電体としての非晶質水素化シリコン（ｉ８ｉｏ）
３と、前記非晶質水素化シリコン３上に、ブロッキング
層としての酸化シリコン層４７に介して形成された酸化
錫膜５からなる透明電極とより構成されている。The photoelectric conversion element of the embodiment of the present invention is shown in FIG.
As shown in the A-A cross-sectional view in the figure, a pattern is divided into predetermined shapes on an insulating ceramic substrate l. The formed chromium (Or) electrode 2 and the amorphous hydrogenated silicon (i8io) as a photoconductor formed on this Or
3, and a transparent electrode consisting of a tin oxide film 5 formed on the amorphous hydrogenated silicon 3 with a silicon oxide layer 47 as a blocking layer interposed therebetween.
次に、この光電変換素子の製造方法について説明する。Next, a method for manufacturing this photoelectric conversion element will be explained.
まず、絶縁性のセラミック基板ｌ上に、電子ビーム蒸着
法によって約０．２μｍの膜厚を有するＯｒ薄薄膜層着
膜たのち、フォトリソグラフィニによって、所定の形状
に、Ｏｒｒ極２のパターンを形成する。First, a thin layer of Or with a thickness of about 0.2 μm is deposited on an insulating ceramic substrate l by electron beam evaporation, and then a pattern of Orr pole 2 is formed into a predetermined shape by photolithography. Form.
次いで、プラズマ化学蒸着法（プラズマＯ，ＴＤ法）Ｋ
より、約１μｍの厚さに非晶質水素化シリコン膜を着膜
する。Next, plasma chemical vapor deposition method (plasma O, TD method) K
Then, an amorphous hydrogenated silicon film is deposited to a thickness of about 1 μm.
こののち、スパッタリング法によって、酸化シリコン層
を約５０〜１０００オングストローム〔ｌ）着膜し、続
いて、スパッタリング法を用いて、酸化インジウムｌを
約８００ｘの厚さに着膜することにより、この光電変換
素子は形成される。Thereafter, a silicon oxide layer with a thickness of approximately 50 to 1000 angstroms (l) is deposited by sputtering, and then indium oxide (l) is deposited to a thickness of approximately 800 angstroms (l) by sputtering. A conversion element is formed.
このようにして形成された光電変換素子の電圧−電流特
性を第３図に示す、Ｍ軸は電流（Ａ／−）、横軸は電圧
（Ｖ）である。曲１ｊＡは、１００ルクスＣＩ！χ）の
照度で光照射を行なった時の光電流の電圧−電流特性曲
線な示し、曲線Ｂ、０は夫々７０Ｃ，２５Ｃにおける暗
電流の電流−電圧特性曲線を示す。また点線で示されて
いる曲線Ａ、Ｂ、Ｏは従来の光電変換素子ブロッキング
層をもたないだけで他は本発明実施例の光電変換素子と
同一構成をもつものと同様一つ電流−電圧特性曲線を示
す。The voltage-current characteristics of the photoelectric conversion element thus formed are shown in FIG. 3, where the M axis is current (A/-) and the horizontal axis is voltage (V). Song 1jA is 100 lux CI! Curves B and 0 show the current-voltage characteristic curves of dark current at 70C and 25C, respectively. Curves A, B, and O shown by dotted lines are the same as those of the conventional photoelectric conversion element that does not have a blocking layer but has the same structure as the photoelectric conversion element of the embodiment of the present invention. Characteristic curves are shown.
７０Ｃにおゆる暗電流の電流−電圧特性曲線である本発
明実施例の光電変換素子についての曲線Ｂと従来例の光
電変換素子につい℃の曲線Ｂとの比較から明らかなよう
に、暗電流は、７０得ることができる。As is clear from the comparison of curve B for the photoelectric conversion element of the present invention example, which is the current-voltage characteristic curve of dark current at 70C, and curve B at °C for the photoelectric conversion element of the conventional example, the dark current is , 70 can be obtained.
また２５Ｃにおいても同様九曲線に曲線Ｃと以下に抑制
されている。Also at 25C, the curve is similarly suppressed to the nine curves and the curve C.
上記測定結果から明らかなように、本発明の光電変換素
子によれば、暗電流を低減し、良好なりＭ比を得ること
が可能である。これは、ブロッキング層が存在している
ことによって、電極からの電荷の注入及び光導電体層で
あるアモルファスシリコーン層で熱的に励起された電荷
の移動が抑制されるためと考えられる。As is clear from the above measurement results, according to the photoelectric conversion element of the present invention, it is possible to reduce dark current and obtain a good M ratio. This is considered to be because the presence of the blocking layer suppresses charge injection from the electrode and movement of thermally excited charges in the amorphous silicone layer that is the photoconductor layer.
なお、実施例においてはブロッキング層として、スパッ
タリング法によって形成した酸化シリコン膜を用いたが
、これに代えて、光導電体として非晶質水素化シリコン
層を着膜したのち、大気又は酸素雰囲気中で加熱するこ
とにより、この非晶質水素化シリコン層表面が酸化され
てできる酸化７リコン膜を使用してもよい。In the examples, a silicon oxide film formed by sputtering was used as the blocking layer, but instead of this, an amorphous hydrogenated silicon layer was deposited as a photoconductor and then exposed to air or an oxygen atmosphere. An oxidized 7-licon film formed by oxidizing the surface of this amorphous hydrogenated silicon layer by heating at a temperature may be used.
また、同様に、非晶質水素化シリコン層表面を陽極酸化
することによっても、良好なブロッキング層としての酸
化シリコン膜り％形成される。Similarly, by anodizing the surface of the amorphous hydrogenated silicon layer, a silicon oxide film can be formed as a good blocking layer.
更にまた、透明電極に用いられている酸化錫及び酸化イ
ンジウム処膜の形成途上で酸素量を高めて符形成した高
抵抗の酸化膜も、プ０′ツキング４として有効である。Furthermore, a high-resistance oxide film formed by increasing the amount of oxygen during the formation of the tin oxide and indium oxide treatment film used for the transparent electrode is also effective as the plug 4.
この場合は、透明′ｄＬｉ形成のためのスパッタリング
に比べ酸素分圧比乞高くしてスパッタリングを行ない、
ブロクキング層としての高抵抗の酸化錫又は酸化インジ
ウム腸ヲ形成したのち、酸素の流入を停止し、Ｉａ索分
圧比を下げて、透明′電極形成用のスパッタリングを行
なえばよい。In this case, sputtering is performed at a much higher oxygen partial pressure ratio than in sputtering for forming transparent 'dLi.
After forming a high-resistance tin oxide or indium oxide layer as a blocking layer, the flow of oxygen may be stopped, the partial pressure ratio of the Ia cable may be lowered, and sputtering for forming a transparent electrode may be performed.
この他、ブロッキング層としては、窒化シリ；ン膜など
の他の絶縁膜でも同様の効果を呈する。In addition, other insulating films such as a silicon nitride film can also be used as the blocking layer to provide similar effects.
さらＫまた、実施例においては、セラミック基板を使用
したが、ガラス基板等の他の絶縁性基板でもよいことは
言うまでもない。Furthermore, although a ceramic substrate was used in the embodiment, it goes without saying that other insulating substrates such as a glass substrate may also be used.
以上、説明してきたように、本発明によれば、透光性の
第２電極と半導体層との間にブロッキング層を介在せし
めたので暗電流の温度％性が良好で、ＳＮ比の優れたサ
ンドイッチ構造の光電変換素子を得ることができる。As described above, according to the present invention, since the blocking layer is interposed between the transparent second electrode and the semiconductor layer, the temperature % characteristic of dark current is good and the S/N ratio is excellent. A photoelectric conversion element with a sandwich structure can be obtained.
第１図は本発明実施例の光電変換素子の平面概要図、第
２図は、第１図のＡ−入断面図、第３図は電流−電圧特
性曲＠を示す図である。
ｌ・・・セラミック基板、２・・・クロム電極、３・・
・非晶質水素化シリコン（光導電体）、４・・・酸化シ
リコン層（ブロクキング層）、５・・・酸化インジウム
錫Ｒ（透明電極）、Ａ・・・本発明実施例の光電変換素
子の光電流の電流−電圧特性曲線、Ｂ・・・同光電変換
素子の７０Ｇにおける暗電流の電流−電圧特性曲線、Ｃ
・・・同光電変換素子の２５Ｃにおける暗電流の電流−
電圧特性曲線・Ａ′・Ｂ’、 Ｏ’−・・従来例の光電
変換素子のＡ、Ｂ、Ｏとの比較曲線。
−）
特許庁長官 殿
１．生着の表示
Ｉ１１和５８年特訂願第９０３２７号
２、発明の名称
光電変換素子およびそのＭ胎方法
３、補正をする者
事ヂｌとの関係 １梶′１出願人
富士ゼロックス株式会社
４、代理人
（〒１０４）東京都中央区銀座２丁目１１番２号銀座大
作ビル６階 電話０３−５４５−３５０８ （代表）昭
和５８年８月１０日
変換素子およびその製造方法」に訂正する。
１１FIG. 1 is a schematic plan view of a photoelectric conversion element according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line A in FIG. 1, and FIG. 3 is a diagram showing a current-voltage characteristic curve @. l... Ceramic substrate, 2... Chrome electrode, 3...
・Amorphous hydrogenated silicon (photoconductor), 4... silicon oxide layer (blocking layer), 5... indium tin oxide R (transparent electrode), A... photoelectric conversion of the embodiment of the present invention Current-voltage characteristic curve of photocurrent of the device, B...Current-voltage characteristic curve of dark current at 70G of the same photoelectric conversion element, C
...Dark current of the same photoelectric conversion element at 25C -
Voltage characteristic curves A', B', O'--Comparison curves with A, B, and O of conventional photoelectric conversion elements. -) Commissioner of the Patent Office, 1. Indication of engraftment I11 Special Edition No. 90327 of 1958 2 Name of the invention Photoelectric conversion element and its method 3 Relationship with the person making the amendment 1 Kaji'1 Applicant Fuji Xerox Co., Ltd. 4 , Agent (6th floor, Ginza Daisaku Building, 2-11-2, Ginza, Chuo-ku, Tokyo 104) Telephone: 03-545-3508 (Representative) August 10, 1980 Corrected to ``Conversion element and its manufacturing method''. 11
Claims (1)
第２電極とで挾持してなるサンドイッチ構造の光電変換
素子において、前記第２電極と前記半導体層との間に絶
縁層を介在せしめたことを特徴とする光電変換素子。 （２） 前記７絶Ｒ層が、前記第２電極の構成物質の
酸化物又は、前記半導体層の酸化物からなることを特徴
とする特許請求の範囲第（１）項に記載の光電変換素子
。 （３） 前記絶縁層が、酸化シリコン、窒化シリコン
、高抵抗の峨化錫、高抵抗の酸化インジウム錫のうちの
いずれかであることを特徴とする特許請求の範囲第（１
）項に記載の光電変換素子。 （４）第１電極と、透光性の第２電極との間に光導電体
Ｊｚヲ挾持してなるサンドイッチ構造の光電変換素子を
形成するにあたり、前記光導電体層を形成したのち、こ
の光導電体層の表面を酸化することによって、絶縁ｊ―
を形成し、次いで第２電極を形成することを特徴とする
光電変換素子の製造方法。 （５）絶縁層及び透光性の第２’ｉＫ極として同一の成
分元素から成る金属酸化物を用い、各層の着膜忙際して
は反応性ガス中の酸素のガス分圧比を変化させることに
より、ｌ！！！縁層及び透光性の第２電極を形成するこ
とを特徴とする光電変換素子の製造方法。[Claims] (13) In a photoelectric conversion element having a sandwich structure in which a semiconductor layer as a body is sandwiched between a first electrode and a transparent second electrode, the second electrode and the semiconductor layer are A photoelectric conversion element characterized in that an insulating layer is interposed between the photoelectric conversion elements. The photoelectric conversion element according to claim (1), characterized in that: (3) the insulating layer is made of any one of silicon oxide, silicon nitride, high resistance tin oxide, and high resistance indium tin oxide; Claim No. 1 (1) characterized in that
) The photoelectric conversion element described in item 1. (4) In forming a photoelectric conversion element having a sandwich structure in which a photoconductor is sandwiched between a first electrode and a light-transmitting second electrode, after forming the photoconductor layer, By oxidizing the surface of the photoconductor layer, insulation
1. A method for manufacturing a photoelectric conversion element, the method comprising forming a first electrode, and then forming a second electrode. (5) Metal oxides consisting of the same component elements are used as the insulating layer and the transparent 2'iK electrode, and the gas partial pressure ratio of oxygen in the reactive gas is changed during the deposition of each layer. By the way, l! ! ! A method for manufacturing a photoelectric conversion element, comprising forming an edge layer and a transparent second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090327A JPS59229860A (en) | 1983-05-23 | 1983-05-23 | Photoelectric conversion element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090327A JPS59229860A (en) | 1983-05-23 | 1983-05-23 | Photoelectric conversion element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59229860A true JPS59229860A (en) | 1984-12-24 |
Family
ID=13995426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58090327A Pending JPS59229860A (en) | 1983-05-23 | 1983-05-23 | Photoelectric conversion element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59229860A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8592931B2 (en) | 2008-01-30 | 2013-11-26 | Fujifilm Corporation | Photoelectric conversion element and solid-state imaging device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
| JPS5863164A (en) * | 1981-10-13 | 1983-04-14 | Fuji Xerox Co Ltd | Optical read-out element |
-
1983
- 1983-05-23 JP JP58090327A patent/JPS59229860A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
| JPS5863164A (en) * | 1981-10-13 | 1983-04-14 | Fuji Xerox Co Ltd | Optical read-out element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8592931B2 (en) | 2008-01-30 | 2013-11-26 | Fujifilm Corporation | Photoelectric conversion element and solid-state imaging device |
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