JPS592284A - Controlling system of bubble memory - Google Patents

Abstract

PURPOSE:To eliminate the need for interruption of data transfer for a switch of magnetic bubble memory elements even in case a serial read/write operation is carried out for plural magnetic bubble memory elements, by shifting the markers among the bubble elements with the number of unused of pages. CONSTITUTION:Markers ma1, ma2- are set previously among magnetic bubble memory elements with a shift equivalent to the number of unused pages. Then driving magnetic fields synchronizing with each other are applied collectively to plural magnetic bubble memory elements regardless of a read- or write-selected magnetic bubble memory element. Under such conditions, the magnetic bubble memory elements which are independent of each other in terms of functions are read and written serially. Therefore, a continuous read/write operation is possible with the same relation as the page intervals within one magnetic bubble memory element when the magnetic bubble memory elements or devices are switched and even among the magnetic bubble memory elements which are read and written with a serial switch.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a control method for a magnetic bubble memory, and in particular to a method for controlling a plurality of magnetic bubble memory elements that are independently controlled so as to be able to handle a large amount of data over a long period of time. The present invention relates to a control method for a large-capacity memory equipped with a large-capacity memory.

(Background of BL technology Figure 1 shows a known magnetic bubble memory element to explain the circuit configuration of the magnetic bubble memory element, in which the former major line, MO is 1-transfer gate Ti+ to T+n, and replicate gate Ro+. Ron is connected to the minor loops m1 to mn.Each bubble generated by the bubble generator G according to the written information is sequentially transferred to the major line old by the rotational driving magnetic field, and the bubbles for one page are transferred to each major line. When reaching the positions of the transfer gates Ti1 to Tin, the bubbles on the major line Mi are transferred all at once into the minor loops m1 to mn by energizing the conductor Ci for gate control.In the minor loops m1 to mn. The bubbles block-transferred to are rotated in each minor loop by the driving magnetic field.Next, the second page of information is generated and similarly transferred into each minor loop from the major line Mi.In this way, Information is written page by page.To read the information in the minor loop,
The bubbles to be read are replicate games I-R01~R
When reaching the on position, conductor Go is energized to replicate one page all at once onto the major line MO. Then, it is transferred along the major line Mo by the driving magnetic field, detected by the detector D, and read out. Note that swap gates may be used in place of the transfer gates Ti+ to Tin.

(C1 Prior art and its problems) When handling a large amount of continuous data using such a magnetic bubble memory, it is necessary to prepare multiple sets of magnetic bubble memory devices as shown in Fig. 1 and to adjust the timing as shown in Fig. 2. By switching the operation with , data is handled across multiple devices. In Figure 2, (a) and (c) indicate the drive magnetic field enable state of the first and second devices, respectively, and ( B) (D) are the 1st and 2nd respectively.
It shows the data output of the second device. That is, when handling data serially across multiple devices, the driving magnetic field of the #1 device operates as shown in (a), and after reading data from the device as shown in (b), The driving magnetic field of the #2 device is activated as shown in (c), and the data is read out as shown in (d). In this way, after data reading from the previous device is completed, it is stopped and the next device is activated to read the data.

However, as is clear from the explanation of Figure 1, due to the structure of bubble memory, data is not output at the same time as replication out, but at least data is transferred between the first replicate gate Ron and detector D. A delay occurs equal to the number of bits and nodes in the pattern. Therefore, as shown in FIGS. 2(c) and 2(d), the first page data is output with a delay of Td after the driving magnetic field is activated. Furthermore, the next page cannot be replicated out until after the last bubble of that page passes through the first replication gate Ron.

In the case of data writing, the data of a certain page is not swapped (or transferred) into the minor loop at the same time as it is written by the bubble generator G, but from the bubble generator G to the last swap (or transfer) gate Tin. A delay occurs by the number of bits of the transfer pattern that exists between the two.

Therefore, if the device is switched by simply stopping and starting the drive magnetic field, the interval between data blocks before and after switching will differ from the page interval in the same device. By simultaneously operating the drive magnetic field of the target device over several pages before and after switching, it is possible to make the data block spacing at the time of switching the same as the page spacing, but the control of each drive magnetic field function becomes complicated. Become.

In addition, the drive coils of multiple devices as shown in Figure 3 (a) and (b) are operated synchronously with the same coil drive pulse, and data is serially transmitted across these devices 5-Ml and M2. Even if you read or write, each device M+, Mz... is a marker ma.
+, may... are set to be aligned so that they are on the same page, and when device #1 is read out, device #2 will read based on marker 1Ila2,
Reading begins. Therefore, data output vacancies occur at the time of device switching by the number of unused pages in device #1, and from this point of view as well, it is not possible to continuously read only used pages across a plurality of devices.

The above problem also occurs when multiple magnetic bubble memory elements that can be controlled independently are installed in one drive coil, and data is serially read and written across these magnetic bubble memory elements. Occur.

(d1 Purpose of the Invention) The present invention eliminates the need to interrupt data transfer for switching between magnetic bubble memory elements even when multiple magnetic bubble memory elements are used for serial read/write operations. 6. Furthermore, it is an object of the present invention to realize a control system in which the page interval before and after switching is the same as the page interval within the same device.

te1 Structure of the Invention To achieve this object, the present invention provides an apparatus comprising a plurality of independently controlled magnetic bubble memory elements.
Continuously read and read these multiple magnetic bubble memory elements.
The width control is performed independently so that after reading and writing the last page of one magnetic bubble memory element, the first page of the next magnetic bubble memory element can be continuously read and written. The markers are set to be shifted by the number of unused pages between each magnetic bubble memory element, and the markers are set to be shifted by the number of unused pages between each magnetic bubble memory element, and the marker is set at the same time to these multiple magnetic bubble memory elements regardless of whether reading or writing is selected. A synchronized driving magnetic field is applied to continuously read and write data.

(F1 Embodiment of the Invention Next, how the bubble memory control method according to the present invention is actually implemented will be explained in the following embodiment. Fourth
The figure is a block diagram showing the control method of the magnetic bubble memory according to the present invention, and FIG. 5 is a time chart showing its operation. In FIG. 4, M+, Mz, . . . , Mn are magnetic bubble memory devices each having a configuration in which one or more magnetic bubble memory elements are mounted within a drive coil. And these devices M+, M
+...Mn are coil driver/generator function driver 11.12=4n and read/write function driver 21.22.
...2n, and the sense circuit 3 converts the analog signal into a digital signal and outputs the read data. Each coil driver/generator function driver 11.12...1n and read/write function driver 21.22...
2n, a coil drive pulse CdP, a generate pulse GP, and a read pulse RP are commonly supplied from the control circuit 4.
and a light pulse WP are supplied. Reference numeral 5 denotes a page management circuit, which is modulo n of the number of pages used by one bubble memory device and consists of a lower counter for managing the page position and an upper counter for managing its carry. 6 is an enable generation circuit which switches the enable signal of each read/write function driver 21, 22, . . . 2n every time the content of the upper counter of the page management circuit 5 is updated, and It manages the operations of the function drivers 21, 22...2n. Also, from the enable generation circuit 6 to each coil driver X/generator function driver 11, 12...I
By inputting an enable signal Ed in common to n in parallel, all the coil drivers/generator function drivers 11, 12, . . . 1n are synchronously driven with the same coil drive pulse CdP.

In addition, as shown in FIG. 6, each device M1, Mz・
...The memory elements in Mn are in a state in which the page setting position of each device is advanced by [(total number of pages per device m) - (number of pages used by one device n)) relative to the previous device ( (including m-n=o), the marker mal
Set %ma2...

9- Now the 1st to Nth devices M+, Mz...
Considering the case where Mn is read out serially, the enable signal Ed of the coil drino\ is as shown in Fig. 5 (f).
During reading/writing, all devices M1, Mz...Mn are manually operated in parallel in common, and unlike the conventional example shown in Fig. 1, all drive coils are operated with the same clock during reading/writing. . In this state, read pulses are manually applied to each device Ml, Mz...Mn, and the enable signal generation circuit 6
First, as in (b), #1 device M! Read/write function driver 21, 22...
The read function driver h of 2n is enabled, a read output is generated as shown in (e), and reading is performed. When the read pulse for the (n-1)th page is finished, the upper counter of the page management circuit 5 increments, and the enable signal Bz is inputted from the enable generation circuit 6 to the #2 denoise M2. Then (
As shown in (b), the enable signal to the read function driver #1 is stopped to stop reading, and the read function driver #210- is brought into an operating state by inputting the enable signal to it. At this time, since the #2 device M2 is advanced in pages by the number of unused pages (m-n) from the device M1 as shown in FIG. 6, the data is read from exactly the 0th page.

In the same way, when the last page of the second device M2 is read out, the first page of the third device is read out, and all the pages in use are sequentially read out sequentially until the Nth device Mn. is read out. During this time, the read pulse interval within the same device and the read pulse interval at the time of device switching are constant, so the page interval at the time of switching is also constant. As described above, even if the signal is replicated out by the read pulse, there is a delay before it is output to the sense circuit, so the read output (e) is generated with a delay.

In the case of a write operation, a write pulse is input to the write function driver while a synchronized driving magnetic field is applied to all magnetic bubble memory elements, and an enable signal is switched and inputted from the enable generation circuit 6. By doing so, similar control is performed, and information can be continuously written to all devices M+, M2, . . ., Mn.

The idea of the present invention can be applied as is even when a plurality of magnetic bubble memory elements that can be controlled independently are installed in one drive coil, and data is read and written serially across these magnetic bubble memory elements. be done. As for the circuit configuration, other than having a single coil driver,
It will be the same as Figure 4. Therefore, in the present invention, "a plurality of magnetic bubble memory elements whose read/write operations are switched" refers to [a plurality of magnetic bubble memory elements whose read/write operations are switched], which are equipped with a plurality of magnetic bubble elements in one drive coil, each of which is functionally independently controlled, and serially controlled. "A device that is read and written to" also has "a plurality of magnetic bubble devices each having one or more magnetic bubble memory elements in one drive coil, and data between each device is serially read and written.""=11-" shall also be included.

(g1 Effects of the Invention As described above, according to the present invention, after reading and writing the last page of a certain magnetic bubble memory element, the first page of the next magnetic bubble memory element can be continuously read and written. , the markers are set to be shifted by the number of unused pages between each magnetic bubble memory element, and regardless of whether the magnetic bubble memory element is selected for reading or writing, multiple magnetic bubble memory elements The structure is such that the functionally independent magnetic bubble memory elements are serially read and written while a synchronized driving magnetic field is applied to them all at once.

Therefore, even between magnetic bubble memory elements that are read and written by switching serially, when the magnetic bubble memory elements or devices are switched, one
It can be read and written in a relationship similar to the page spacing within a single magnetic bubble memory element.

As a result, even large amounts of continuous data can be read and written without having to be aware of the switching of the magnetic bubble memory element or magnetic bubble memory device. It has the unique effect of realizing bubble memory. It is also particularly effective when data to be read or written is generated over a long period of time.

[Brief explanation of the drawing]

Fig. 1 is a diagram showing the circuit configuration of a known magnetic bubble memory element, Fig. 2 is a time chart showing conventional serial read/write, and Fig. 3 is a diagram showing marker positions of a conventional serial read/write type device. , FIG. 4 and subsequent figures show embodiments of the present invention. FIG. 4 is a block diagram showing the configuration of a control circuit, FIG. 5 is a time chart, and FIG. 6 is a diagram showing the positional relationship of markers. In the figure, N4+, M2...Mn are magnetic bubble memory devices, 11.12...In are coil drivers/generator function drivers, 21.2
2...2n are read/write function drivers, 3 is a sense circuit, 4 is a control circuit, 5 is a page management circuit, and 6 is an enable generation circuit. Patent applicant: Fujitsu Ltd. Agent: Patent attorney Minoru Aoyagi 15- Figure 1

Claims (1)

[Claims] In an apparatus equipped with a plurality of independently controlled magnetic bubble memory elements, there is provided a method for successively reading and writing the plurality of magnetic bubble memory elements. Next magnetic bubble memory element after reading/writing is completed. Markers are set so that they are shifted by the number of unused pages between each magnetic bubble memory element, which is controlled independently, so that the first page of the memory can be read and written continuously. Alternatively, a bubble memory control method is characterized in that a synchronized driving magnetic field is simultaneously applied to a plurality of magnetic bubble memory elements to continuously read and write them, regardless of whether they are selected for writing or not.