JPS59226831A - Pyroelectric type infrared sensor - Google Patents
Pyroelectric type infrared sensorInfo
- Publication number
- JPS59226831A JPS59226831A JP58102115A JP10211583A JPS59226831A JP S59226831 A JPS59226831 A JP S59226831A JP 58102115 A JP58102115 A JP 58102115A JP 10211583 A JP10211583 A JP 10211583A JP S59226831 A JPS59226831 A JP S59226831A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pyroelectric
- type semiconductor
- joined
- cooled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 3
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
Abstract
Description
【発明の詳細な説明】
本発明は、赤外線を受けて温度変化したときに電圧を発
生する焦電型赤外線センサの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a pyroelectric infrared sensor that generates a voltage when the temperature changes upon receiving infrared rays.
九゛
焦電型赤外線センサは、センサ自身の温度変化がなけれ
ば電圧を発生しないものであるため、赤外線受光面を外
部より断続的に遮光して強制的に温度変化を与えなけれ
ばならない。一般的な遮光方法としては、モータに遮光
板を取り付は回転させるか、チョッパにより断続的に遮
光する方法がとられる。しかし、これらは機械的なもの
であるため、形状が大きくなり、信頼性も劣るという問
題があった。Since a pyroelectric infrared sensor does not generate voltage unless there is a temperature change in the sensor itself, the infrared receiving surface must be intermittently shielded from light from the outside to force a temperature change. As a general light shielding method, a light shielding plate is attached to a motor and rotated, or a chopper is used to intermittently shield light. However, since these are mechanical, there are problems in that they are large in size and have poor reliability.
本発明は上記点に鑑み、焦電型赤外線センサの温度を強
制的に変化させる構成として、焦電素子と熱電冷却素子
を一体化する構造により行い、生形化、高信頼性を得る
ことができる焦電型赤外線センサを提供することを目的
とする。In view of the above points, the present invention employs a structure that integrates a pyroelectric element and a thermoelectric cooling element as a configuration for forcibly changing the temperature of a pyroelectric infrared sensor, thereby achieving bioformation and high reliability. The purpose is to provide a pyroelectric infrared sensor that can
以下本発明を図に示す一実施例により説明する。The present invention will be explained below with reference to an embodiment shown in the drawings.
図において、■はＬｉＴａＯ３，ＬｉＮｂＯ３゜ＰＺＴ
等の材料から成る焦電素子で、片面に電極２を設け、他
の片面に導電性接着剤等で電極３が設けられている。４
はＢｉ２Ｓｅ２．Ｂｉ２Ｔｅ３等の材料から成るＮ形半
導体、５はＢｉ２Ｔｅ３゜Ｓ ｂ ２ Ｔ ｅ ３等の
材料から成るＰ形半導体である。In the figure, ■ indicates LiTaO3, LiNbO3゜PZT
It is a pyroelectric element made of materials such as, and has an electrode 2 on one side and an electrode 3 on the other side with a conductive adhesive or the like. 4
is Bi2Se2. 5 is an N-type semiconductor made of a material such as Bi2Te3, and 5 is a P-type semiconductor made of a material such as Bi2Te3°S b 2 Te 3.
Ｎ形半導体４の片端とＰ形半導体５の片端は、導電性接
着剤等で電極３の片面に接着される。またＮ形半導体４
とＰ形半導体５の他片面は、それぞれ電極６．７が接着
される。これら電極６，７は絶縁ｌ！８を介して放熱板
９に接合される。１０はＦＥＴ等の電気回路素子、１１
は電気回路素子１０の支持台、１２はセラミック、樹脂
等で形成される固定土台、１３はケース、１４は透明状
基板からなる受光窓である。One end of the N-type semiconductor 4 and one end of the P-type semiconductor 5 are adhered to one side of the electrode 3 with a conductive adhesive or the like. Also, N-type semiconductor 4
An electrode 6.7 is bonded to the other side of the P-type semiconductor 5 and the other side of the P-type semiconductor 5, respectively. These electrodes 6, 7 are insulated! It is joined to a heat sink 9 via 8. 10 is an electric circuit element such as FET, 11
12 is a support base for the electric circuit element 10, 12 is a fixed base made of ceramic, resin, etc., 13 is a case, and 14 is a light receiving window made of a transparent substrate.
そこで、Ｎ形半導体４とＰ形半導体５とでもって熱電冷
却素子１５を形成し、電極３側が冷却面、電極６，７側
が加熱面となる。加熱面は放熱板９に接合されているた
め自然放熱を行ない異常温度上昇を防止している。また
、冷却面は電極３に接合され、焦電素子１に接合される
ため、焦電素子１は冷却されることになる。受光窓１４
より赤外線が入光すると焦電素子１の温度が上昇する。Therefore, a thermoelectric cooling element 15 is formed by the N-type semiconductor 4 and the P-type semiconductor 5, with the electrode 3 side serving as a cooling surface and the electrodes 6 and 7 sides serving as a heating surface. Since the heating surface is joined to the heat radiating plate 9, natural heat radiation is performed and abnormal temperature rise is prevented. Moreover, since the cooling surface is joined to the electrode 3 and to the pyroelectric element 1, the pyroelectric element 1 is cooled. Light receiving window 14
As more infrared rays enter, the temperature of the pyroelectric element 1 increases.
この時に断続的に焦電素子１を冷却する。すなわち熱電
冷却素子１５にパルス状の電圧を印加すれば、焦電素子
１が断続的に冷却・加熱を繰り返すことになるので、焦
電素子１はパルス状の電圧が発生ずることになる。第２
図は、第１図の焦電型赤外線センサの等価回路図であり
、Ａ−０間に熱電冷却素子１５へのパルス状電圧を印加
する。焦電素子１の出力はＳ−０間に現れる。At this time, the pyroelectric element 1 is intermittently cooled. That is, if a pulsed voltage is applied to the thermoelectric cooling element 15, the pyroelectric element 1 will intermittently repeat cooling and heating, and thus a pulsed voltage will be generated in the pyroelectric element 1. Second
The figure is an equivalent circuit diagram of the pyroelectric infrared sensor shown in FIG. 1, in which a pulsed voltage is applied to the thermoelectric cooling element 15 between A-0. The output of the pyroelectric element 1 appears between S-0.
以上述べたように本発明に成る焦電型赤外線センサは、
機械的チョッパを使用することなく焦電素子の加熱・冷
却が行なえるので信頼性が高く小形軽量なものを提供す
ることができる。As described above, the pyroelectric infrared sensor according to the present invention is
Since the pyroelectric element can be heated and cooled without using a mechanical chopper, it is possible to provide a highly reliable, small and lightweight device.
第１図及びｍ２図は本発明の一実施例を示１−断面図及
び等価回路図である。
１・・・焦電素子、２，３，６．７・・・電極、４・・
・Ｎ型半導体、５・・・Ｐ型半導体、８・・・絶縁膜、
９・・・方’１熱板、１０・・・電子回路素子、１１・
・・支（青白、１２・・・固定土台、１３・・・ケース
、１４・・・受光窓、１５・・・熱電冷却素子。
代理人弁理士 岡 部 隆FIGS. 1 and 2 are a sectional view and an equivalent circuit diagram showing an embodiment of the present invention. 1... Pyroelectric element, 2, 3, 6.7... Electrode, 4...
・N-type semiconductor, 5...P-type semiconductor, 8...insulating film,
9...way'1 hot plate, 10...electronic circuit element, 11...
... Support (blue and white, 12... Fixed base, 13... Case, 14... Light receiving window, 15... Thermoelectric cooling element. Patent attorney Takashi Okabe
Claims (1)
却素子の冷却面を配置したことを特徴とする焦電型赤外
線センサ。A pyroelectric infrared sensor characterized in that a cooling surface of a thermoelectric cooling element is arranged on a surface other than the infrared receiving surface of the pyroelectric element via an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58102115A JPS59226831A (en) | 1983-06-07 | 1983-06-07 | Pyroelectric type infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58102115A JPS59226831A (en) | 1983-06-07 | 1983-06-07 | Pyroelectric type infrared sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59226831A true JPS59226831A (en) | 1984-12-20 |
Family
ID=14318797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58102115A Pending JPS59226831A (en) | 1983-06-07 | 1983-06-07 | Pyroelectric type infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59226831A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2365209A (en) * | 2000-07-22 | 2002-02-13 | Bae Sys Electronics Ltd | Thermal sensing apparatus with reset means involving intermittently providing thermal path between a detector and a thermal sink |
-
1983
- 1983-06-07 JP JP58102115A patent/JPS59226831A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2365209A (en) * | 2000-07-22 | 2002-02-13 | Bae Sys Electronics Ltd | Thermal sensing apparatus with reset means involving intermittently providing thermal path between a detector and a thermal sink |
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