JPS5922352B2 - 抑止接触部を有するテレビ撮像管用光導電体タ−ゲツト - Google Patents
抑止接触部を有するテレビ撮像管用光導電体タ−ゲツトInfo
- Publication number
- JPS5922352B2 JPS5922352B2 JP50093236A JP9323675A JPS5922352B2 JP S5922352 B2 JPS5922352 B2 JP S5922352B2 JP 50093236 A JP50093236 A JP 50093236A JP 9323675 A JP9323675 A JP 9323675A JP S5922352 B2 JPS5922352 B2 JP S5922352B2
- Authority
- JP
- Japan
- Prior art keywords
- photoconductor
- layer
- target
- junction
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 230000006798 recombination Effects 0.000 claims description 12
- 239000002800 charge carrier Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 8
- 238000005215 recombination Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 21
- 230000035945 sensitivity Effects 0.000 description 10
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 8
- 230000003321 amplification Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2436990 | 1974-08-01 | ||
| DE19742436990 DE2436990A1 (de) | 1974-08-01 | 1974-08-01 | Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5148921A JPS5148921A (enrdf_load_stackoverflow) | 1976-04-27 |
| JPS5922352B2 true JPS5922352B2 (ja) | 1984-05-25 |
Family
ID=5922091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50093236A Expired JPS5922352B2 (ja) | 1974-08-01 | 1975-08-01 | 抑止接触部を有するテレビ撮像管用光導電体タ−ゲツト |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5922352B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2436990A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1516122A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0756783B2 (ja) * | 1985-06-28 | 1995-06-14 | 日本放送協会 | 光導電膜 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5027326B1 (enrdf_load_stackoverflow) * | 1970-04-22 | 1975-09-06 | ||
| US3755002A (en) * | 1971-04-14 | 1973-08-28 | Hitachi Ltd | Method of making photoconductive film |
| BE791077A (fr) * | 1971-11-09 | 1973-03-01 | Matsushita Electric Ind Co Ltd | Element transducteur photoelectrique |
| US3783324A (en) * | 1972-09-11 | 1974-01-01 | Rca Corp | Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface |
-
1974
- 1974-08-01 DE DE19742436990 patent/DE2436990A1/de active Granted
-
1975
- 1975-07-24 GB GB3095075A patent/GB1516122A/en not_active Expired
- 1975-08-01 JP JP50093236A patent/JPS5922352B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5148921A (enrdf_load_stackoverflow) | 1976-04-27 |
| GB1516122A (en) | 1978-06-28 |
| DE2436990A1 (de) | 1976-02-12 |
| DE2436990C2 (enrdf_load_stackoverflow) | 1989-03-02 |
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