JPS59220915A - Wafer cooling device in sputter equipment - Google Patents

Abstract

PURPOSE:To enable cooling of wafer while Si is deposited by blowing cooled Ar gas against the wafer. CONSTITUTION:On the wall 3 of a sputter chamber which houses a wafer 11, a block 5 with cylindrical flange is attached thereto and a copper block 2 is welded at the end of the block 5. The block 2 is faced to the back surface of the wafer 1. On the back of the block 2, a water-cooling jacket 10 is installed and cooling water is circulated through pipes 6,8 to the jacket 10 to cool the block 2. In the block 2, a cavity 13 is installed to fill Ar gas and a pipe 7 is connected to the cavity 13 whereby the Ar gas is filled in the cavity 13 through the pipe 7. In front of the block 2, plural number of small holes 11 are also provided penetrating to the cavity 13 and the Ar gas is blown on the back surface of the wafer. Since the block 2 is cooled by the jacket 10, the gas filled in the cavity 13 is cooled and blown out through the holes 11. Consequently, when Si is deposited, the temperature of the wafer 1 is lowered.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a urethane cooling device in a sputtering apparatus.

There is an aluminum wiring process in the semiconductor wafer manufacturing process. In recent years, elements have become increasingly finer, the aluminum wiring process has progressed from vapor deposition to sputtering, and the exposure equipment used for the PR (photoresist) process for forming wiring has progressed from a contact type or a grazeion type to a stepper type.

By the way, aluminum films made by sputtering used to be more likely to become cloudy due to the film formation process being more active than those produced by row-based deposition, resulting in a mirror-like film (
However, with the recent development of vacuum pumps (cryo pumps, etc.), background (Ar-
Residual gas pressure (other than gas) is 1"7 to 1O-8Torr
As a result, a film of sufficiently high purity (specularity) can now be obtained.

On the other hand, in the stepper described above, automatic alignment is performed using reflected light from a target pattern previously provided on the scribe line, so if the surface is too specular (high reflectance), this automatic alignment will not work. However, as mentioned above, it is necessary to have a sufficiently mirror surface from the viewpoint of film quality.

In such a case, the conventional method is to install a 3i thin film on top of the aluminum film to act as an interference film and control the reflectance. By the way, the S1 film becomes cloudy and does not become a transparent interference film if the temperature is high during deposition.

Therefore, conventionally, after aluminum was deposited, Si was deposited after waiting for the wafer, whose temperature had been raised by preheating and deposition, to cool down naturally. Unfortunately, it is not possible to perform continuous deposition of aluminum followed by Si deposition, resulting in a problem of extremely inefficient production.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an apparatus capable of cooling a wafer during Si deposition in order to solve the above-mentioned problems.

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to embodiments.

The figure is a sectional view of an embodiment of the invention. In the figure, 1 is a sea urchin, and sputtered flying atoms 12 fly from the left and coat the surface of the sea urchin. A cylindrical flanged block 5 made of stainless steel is attached to the wall 3 of the sputtering chamber containing the wafer via an O-ring 4, and a copper block 2 is welded to the end surface of the block 5. Place it facing the back side of 1. Attach the water cooling jacket 10 to the rear surface of the block 2 by pressing it with the nut 9, and then tighten the jacket l.
Supply and discharge cooling water to O through pipes 6 and 8, and then
to cool down.

There is still a hollow chamber 13 filled with M gas in the copper block 2.
At the same time, a pipe 7 is attached to the rear center of the block 2, and the pipe 7 is connected to the chamber 3. M gas therefore fills the chamber 13 provided in the block 2 through this pipe 7.

Furthermore, a plurality of small holes 11 are provided on the circumference of the front surface of the copper block 2.
．． 11... are provided in communication with the chamber 13. Then, M gas is blown onto the back surface of the wafer through the small hole 11 to extract heat from the wafer. Further, since the block 2 is cooled by the water cooling jacket 10, the gas filling the chamber 13 is cooled and ejected from the small hole 11. Therefore, when depositing Si, the temperature of the wafer is lowered by the M gas.

As explained above, according to the present invention, it is possible to lower the temperature of the wafer during sputtering, thereby forming a Si film without turbidity, and it is also possible to perform Si deposition subsequent to aluminum deposition. It has the effect of improving productivity.

[Brief explanation of drawings]

The figure is a sectional view showing one embodiment of the present invention. 1...Wafer, 10...Water cooling jacket, 2...
・Copper block, 11...Small hole, 3...Sputter chamber wall Patent applicant NEC Corporation Representative Patent attorney Naka Kanno □Pa1
11L'

Claims (1)

[Claims] (1) A block is attached to the wall of the sputtering chamber in which the wafer is housed, and a number of small holes are provided in the front of the block through which argon gas supplied through piping is blown toward the wafer, and cooling is carried out inside the block. A wafer cooling device for a sputtering apparatus, characterized in that a cooling section is provided for supplying and discharging water to cool argon gas spouted.