JPS59218771A - 固体撮像素子 - Google Patents

固体撮像素子

Info

Publication number
JPS59218771A
JPS59218771A JP59089399A JP8939984A JPS59218771A JP S59218771 A JPS59218771 A JP S59218771A JP 59089399 A JP59089399 A JP 59089399A JP 8939984 A JP8939984 A JP 8939984A JP S59218771 A JPS59218771 A JP S59218771A
Authority
JP
Japan
Prior art keywords
photodiode
solid
shield plate
signal line
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59089399A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6316908B2 (cg-RX-API-DMAC10.html
Inventor
Shinya Oba
大場　信彌
Masaaki Nakai
中井　正章
Toshibumi Ozaki
俊文 尾崎
Haruhisa Ando
安藤　治久
Seiji Kubo
征治 久保
Shoji Hanamura
花村　昭次
Ryuichi Izawa
井沢　龍一
Kayao Takemoto
一八男 竹本
Masakazu Aoki
正和 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59089399A priority Critical patent/JPS59218771A/ja
Publication of JPS59218771A publication Critical patent/JPS59218771A/ja
Publication of JPS6316908B2 publication Critical patent/JPS6316908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59089399A 1984-05-07 1984-05-07 固体撮像素子 Granted JPS59218771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59089399A JPS59218771A (ja) 1984-05-07 1984-05-07 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59089399A JPS59218771A (ja) 1984-05-07 1984-05-07 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS59218771A true JPS59218771A (ja) 1984-12-10
JPS6316908B2 JPS6316908B2 (cg-RX-API-DMAC10.html) 1988-04-11

Family

ID=13969564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089399A Granted JPS59218771A (ja) 1984-05-07 1984-05-07 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS59218771A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010268440A (ja) * 2009-04-17 2010-11-25 Canon Inc 光電変換装置及び撮像システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562764A (en) * 1978-11-01 1980-05-12 Mitsubishi Electric Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562764A (en) * 1978-11-01 1980-05-12 Mitsubishi Electric Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010268440A (ja) * 2009-04-17 2010-11-25 Canon Inc 光電変換装置及び撮像システム
US8872092B2 (en) 2009-04-17 2014-10-28 Canon Kabushiki Kaisha Photo-electric conversion device with current fluctuation suppression
US8957364B2 (en) 2009-04-17 2015-02-17 Canon Kabushiki Kaisha Photo-electric conversion device with current fluctuation suppression
US9253425B2 (en) 2009-04-17 2016-02-02 Canon Kabushiki Kaisha Photo-electric conversion device for current fluctuation suppression

Also Published As

Publication number Publication date
JPS6316908B2 (cg-RX-API-DMAC10.html) 1988-04-11

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