JPS59218727A - 半導体基体への不純物導入方法 - Google Patents

半導体基体への不純物導入方法

Info

Publication number
JPS59218727A
JPS59218727A JP9321883A JP9321883A JPS59218727A JP S59218727 A JPS59218727 A JP S59218727A JP 9321883 A JP9321883 A JP 9321883A JP 9321883 A JP9321883 A JP 9321883A JP S59218727 A JPS59218727 A JP S59218727A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
boron
substrate
impurity
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9321883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436454B2 (enrdf_load_stackoverflow
Inventor
Noritada Sato
則忠 佐藤
Yasukazu Seki
康和 関
Osamu Ishiwatari
石渡　統
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP9321883A priority Critical patent/JPS59218727A/ja
Priority to US06/613,778 priority patent/US4618381A/en
Publication of JPS59218727A publication Critical patent/JPS59218727A/ja
Publication of JPH0436454B2 publication Critical patent/JPH0436454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP9321883A 1983-05-26 1983-05-26 半導体基体への不純物導入方法 Granted JPS59218727A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9321883A JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法
US06/613,778 US4618381A (en) 1983-05-26 1984-05-24 Method for adding impurities to semiconductor base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9321883A JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法

Publications (2)

Publication Number Publication Date
JPS59218727A true JPS59218727A (ja) 1984-12-10
JPH0436454B2 JPH0436454B2 (enrdf_load_stackoverflow) 1992-06-16

Family

ID=14076415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9321883A Granted JPS59218727A (ja) 1983-05-26 1983-05-26 半導体基体への不純物導入方法

Country Status (1)

Country Link
JP (1) JPS59218727A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439721A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Introduce method for impurity to semiconductor
JPH01194320A (ja) * 1988-01-28 1989-08-04 Fuji Electric Co Ltd 半導体基体への不純物導入方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0323627A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd プラズマドーピング方法及びその装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197824A (en) * 1981-05-12 1982-12-04 Siemens Ag Method and device for filling impurity to semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197824A (en) * 1981-05-12 1982-12-04 Siemens Ag Method and device for filling impurity to semiconductor material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439721A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Introduce method for impurity to semiconductor
JPH01194320A (ja) * 1988-01-28 1989-08-04 Fuji Electric Co Ltd 半導体基体への不純物導入方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH0323627A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd プラズマドーピング方法及びその装置

Also Published As

Publication number Publication date
JPH0436454B2 (enrdf_load_stackoverflow) 1992-06-16

Similar Documents

Publication Publication Date Title
Hofker et al. Influence of annealing on the concentration profiles of boron implantations in silicon
Fuller et al. Diffusion of donor and acceptor elements in silicon
CA2095449C (en) Supersaturated rare earth doped semiconductor layers by chemical vapor deposition
JPS6355856B2 (enrdf_load_stackoverflow)
Tietjen et al. The preparation and properties of vapor‐deposited epitaxial GaAs1− x P x using arsine and phosphine
US4565588A (en) Method for diffusion of impurities
Rai-Choudhury et al. Doping of epitaxial silicon: Effect of dopant partial pressure
JP2947828B2 (ja) 半導体装置の製造方法
US4618381A (en) Method for adding impurities to semiconductor base material
US20040069213A1 (en) Method and device for producing an electronic gaas detector for x-ray detection for imaging
MaGee et al. Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometry
US4344984A (en) Process for producing a layer containing silicon
JPS59218727A (ja) 半導体基体への不純物導入方法
Kamins Deformation occurring during the deposition of polycrystalline‐silicon films
US4321420A (en) Process for producing a layer containing silicon and photoelectric conversion device utilizing this process
EP1458017A1 (en) Silicon wafer and method for production of silicon wafer
Joshi Precipitates of Phosphorus and of Arsenic in Silicon
Wolley et al. Formation of precipitates in gold diffused silicon
Taft Epitaxial Growth of Doped Silicon Using an Iodine Cycle
JPH0639688B2 (ja) シリコン薄膜の形成方法
Rai‐Choudhury et al. Carbon in Epitaxial Silicon
George et al. The Diffusion of Nickel and Chlorine into P‐Type Lead Telluride at 700° C
TW202403077A (zh) 磊晶晶圓及磊晶晶圓的製造方法
JPH01103832A (ja) プラズマドーピング方法
JPH03218622A (ja) 不純物ドーピングの方法