JPS59214859A - Manufacture of electrostatic latent image bearing body - Google Patents
Manufacture of electrostatic latent image bearing bodyInfo
- Publication number
- JPS59214859A JPS59214859A JP8948283A JP8948283A JPS59214859A JP S59214859 A JPS59214859 A JP S59214859A JP 8948283 A JP8948283 A JP 8948283A JP 8948283 A JP8948283 A JP 8948283A JP S59214859 A JPS59214859 A JP S59214859A
- Authority
- JP
- Japan
- Prior art keywords
- latent image
- electrostatic latent
- layer
- insulating layer
- plasma discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Abstract
Description
【発明の詳細な説明】
（イ） 蘇葉の利用分野
本発明は、アモルファスシリコンを主成分とする光心電
脂と、有機物にてなる透明絶縁層とが形成される静電潜
像担持体の製造方法に関するものである。[Detailed description of the invention] (a) Field of application of Soyo The present invention relates to an electrostatic latent image carrier in which a photocardial resin whose main component is amorphous silicon and a transparent insulating layer made of an organic substance are formed. The present invention relates to a manufacturing method.
（ロ）従来技術
アモルファスシリコンを主成分とするｆＬ導電７層が形
成された静電潜像担持体は、セレンや硫ｆヒカドミウム
を主成分とする光導％Ｐ４が形成されたものに比べ、種
々の点で優れている。ｌｌｊち、前者は後者に比較して
耐熱性や耐磨耗性に富み、無害であるととも（−１高光
感度を有し工いる。また、長波長の光に対し王も、充分
な感１ｗを有するので、電子複写機のみならず、レーザ
プリンタ等に応用することができる。(b) Prior art An electrostatic latent image carrier on which seven fL conductive layers mainly composed of amorphous silicon is formed, compared to one in which a photoconductive %P4 mainly composed of selenium and sulfur hycadmium is formed. It is excellent in various respects. Compared to the latter, the former has better heat resistance and abrasion resistance, is harmless, and has a high light sensitivity (-1).Also, the former has sufficient sensitivity to long wavelength light. Since it has 1W, it can be applied not only to electronic copying machines but also to laser printers and the like.
しかしながら、光導電層がアモルファスシリコンにて形
成された静電潜像担持体は、帯電を繰り返すことによっ
て表面が劣化し、像が流れるという現象が生じる。この
理由は必ずしも明確ではない。しかしながら、光導電層
の表面を有機物にてなる透明絶縁層で被覆すると、これ
を防止できることは公知文献（特開昭５４−１１６９３
０号）により判明している。However, the surface of an electrostatic latent image carrier whose photoconductive layer is formed of amorphous silicon deteriorates due to repeated charging, resulting in a phenomenon in which the image is washed away. The reason for this is not always clear. However, it is known in the literature (Japanese Unexamined Patent Publication No. 54-11693) that this can be prevented by coating the surface of the photoconductive layer with a transparent insulating layer made of organic matter
0).
そこで合成樹脂をフィルム状（二形成して光導電層の上
に貼付したり、液状の合成樹脂を塗布して、透明絶縁層
を形成していた。Therefore, a transparent insulating layer was formed by forming a synthetic resin into a film and pasting it on the photoconductive layer, or by applying a liquid synthetic resin.
しかしながら、このような方法にてブＣ導電層を被覆し
ていたのでは、透明絶縁層が殉］離しやすく、耐久性に
乏しかった。また、ピンホールも発生し易すがった。However, when the conductive layer was coated using this method, the transparent insulating layer was easily separated, resulting in poor durability. In addition, pinholes were also likely to occur.
更（−、アモルファスシリコンを主成分ヒする光導電層
は、通常プラズマ０ＶＤ装置にて形成されるのに対して
、透明絶縁層は全く別の装置で形成されるので、静電潜
像担持体の支持体をハンドリングさせねばならず、生産
効率が悪かった。Furthermore, the photoconductive layer mainly composed of amorphous silicon is usually formed using a plasma 0VD device, whereas the transparent insulating layer is formed using a completely different device. The support had to be handled, resulting in poor production efficiency.
（ハ）発明の目的
本発明は前記従来技術の有する難点に鑑みてなされたも
ので、アモルファスシリコンを主成分とする光導電ｒｒ
ｅの上に、有機物にて成る透明絶縁層を形成するに際し
、透明絶＃＆心を光Ｓ電層の表面（二堅固（二被着させ
んとするものである。(c) Purpose of the Invention The present invention has been made in view of the drawbacks of the prior art described above, and is a photoconductive material mainly composed of amorphous silicon.
When forming a transparent insulating layer made of an organic material on top of the transparent insulating layer, a transparent insulating layer and core are to be adhered to the surface of the photoelectric layer.
また、支持体のへンドリング工程を排除して生産効率を
も高めんとするものである。It is also an attempt to improve production efficiency by eliminating the support handling step.
に）発明の構成
本発明は、シランガスが導入される容器内に支持体を位
置せしめ、プラズマ放電（−よりこの支持体表面１ニア
モルファスシリコンを主成分とする光導電層を形成した
後、前記容器内に有機物上ツマ−のガスを導入し、再度
プラズマ放電させること：二より、この七ツマ−をプラ
ズマ重合させて、前記光導電層の表面を前記有機物（二
て被覆するものである。2) Structure of the Invention The present invention involves positioning a support in a container into which silane gas is introduced, and forming a photoconductive layer mainly composed of near-morphous silicon on the surface of the support by plasma discharge. Introducing a gas containing an organic material into the container and causing plasma discharge again: Second, this material is plasma-polymerized to coat the surface of the photoconductive layer with the organic material.
犀）実施例
第１図および第２図は、本発明の具体例により製造され
た静電潜像担持体を示すもので、第１図はその斜視図、
第２図は部分拡大断面図である。Rhinoceros) Example Figures 1 and 2 show an electrostatic latent image carrier manufactured according to a specific example of the present invention, and Figure 1 is a perspective view thereof;
FIG. 2 is a partially enlarged sectional view.
第２図（二おいて、（１）は表面が超仕上されたアルミ
ニウム製の円筒状の支持体である。この支持体（１）の
表面Ｃ二は、厚さが２０μｍ程度の水素化アモルファス
シリコン（ａ−８１：Ｈ）＠（２）が形成されている。Figure 2 (1) is a cylindrical support made of aluminum with a super-finished surface. Surface C2 of this support (1) is a hydrogenated amorphous material with a thickness of about 20 μm. Silicon (a-81:H)@(2) is formed.
そし又この水素化アモルファスシリコン胸（２）の表面
には、原さが５μｍ程度の透明絶縁層（３）が形成され
ている。この透明絶縁層（３）はポリスチレン若しくは
ポリアセチレンの重合体（二て形成されている。Furthermore, a transparent insulating layer (3) with an original thickness of about 5 μm is formed on the surface of this hydrogenated amorphous silicon chest (2). This transparent insulating layer (3) is made of a polystyrene or polyacetylene polymer.
第３図および第４図は、本発明静電潜像世持体の製造方
法を具体化するためのプラズマ０ＶＤ装置を示すもので
、第６図は一部断面斜視図、第４図は模式図である。こ
れらの図において、（４）は、静電潜像千す指体（５）
および各種のガスを封入する中９円筒状の容器である。3 and 4 show a plasma 0VD apparatus for embodying the method of manufacturing an electrostatic latent image carrier of the present invention, FIG. 6 is a partially sectional perspective view, and FIG. 4 is a schematic diagram. It is a diagram. In these figures, (4) represents the electrostatic latent image (5)
It is a cylindrical container that encloses various gases.
この容器（４）には内部のガスを吸引排気するための、
ロータリーポンプ（６）およびメカニカルブースターポ
ンプ（７）が直列接続されている。容器（４）の内部に
は円柱状でかつ断面がコ字状のプラズマシールド部材（
８）が備えられている。そしてこのプラズマシールド部
材（８）の内部（二は円柱状でかつ中窒環状の電極（９
）が備えられ、この電極（９）の内側には、静電潜像相
持体（５）が回転自社に内挿されている。この静電潜像
相持体（５）は、モータＨの回転軸（Ｉｌｌ（二固着さ
れたホルダ（１２１上に載置され、その上端には、開孔
を閉塞するカバー０３１が装着され工いる。（神は容器
（４）、プラズマシールド部材（８）および電極（９）
の外側壁を軸線と直交方向に貫通するガス供給用パイプ
である。そしてこのガス供給用パイプａ４の内部Ｃ二は
、電極（９）に高周波電力を印加するための導電線Ｑ四
が押通され又いる。This container (4) has a container for suctioning and exhausting the gas inside.
A rotary pump (6) and a mechanical booster pump (7) are connected in series. Inside the container (4) is a cylindrical plasma shield member (with a U-shaped cross section).
8) is provided. The inside of this plasma shield member (8) has a cylindrical shape and an annular electrode (9).
), and an electrostatic latent image carrier (5) is inserted into the rotating body inside this electrode (9). This electrostatic latent image carrier (5) is placed on a holder (121) fixed to the rotating shaft (Ill) of the motor H, and a cover 031 for closing the opening is attached to the upper end of the holder (121). (God is a container (4), plasma shield member (8) and electrode (9)
This is a gas supply pipe that penetrates the outer wall of the cylinder in a direction perpendicular to the axis. A conductive wire Q4 for applying high frequency power to the electrode (9) is pushed through the interior C2 of the gas supply pipe a4.
また、電極（９）の内側壁には、ガスな噴出するための
複数個の貫通孔（９Ｂ）・・・か、回転軸線と平行して
連続的に開設されている。なお、この１１通孔（９ａ）
・・・は、電Ｆｊ＜ （９）の内側壁の全面（二ゎた・
っ又開設されていてもよいし、また部分的に開設されて
いてもよい。（１ｅは電極（９）（＝高周波電力を印加
するための高周波電源である。Further, in the inner wall of the electrode (9), a plurality of through holes (9B) for ejecting gas are continuously opened in parallel with the axis of rotation. In addition, this 11 through hole (9a)
...is the entire inner wall of electric Fj< (9) (2ゎta・
It may be opened completely, or it may be partially opened. (1e is an electrode (9) (= a high frequency power source for applying high frequency power).
前記静電潜像担持体（５）の内部には棒状のヒータ往り
が挿入され、このヒータ面の下端は前記ホルダａ力上に
固設されている。なお、回転軸Ｑｌｌｌ二は前記ヒータ
αＤに給電するブラシ０υｕ８が備えられている。A rod-shaped heater guide is inserted into the interior of the electrostatic latent image carrier (5), and the lower end of the heater surface is fixed on the holder a force. Incidentally, the rotating shaft Qlll2 is provided with a brush 0υu8 for feeding power to the heater αD.
ａ９は酸ｆ（０２）ガスボンベ、（イ）は水素（Ｈ２）
ガスボンベ、Ｑυはモノシクン（８１Ｈ４）ガスボンベ
、（２７Ｊはシボラン（ＢｚｌＨ６）ガスボンベ、ｒ２
３はアルゴン（Ａｒ）ガスボンベそして１２４はガス化
されたポリスチレンモノマーのボンベである。A9 is acid f(02) gas cylinder, (a) is hydrogen (H2)
Gas cylinder, Qυ is Monoshikun (81H4) gas cylinder, (27J is Ciborane (BzlH6) gas cylinder, r2
3 is an argon (Ar) gas cylinder and 124 is a gasified polystyrene monomer cylinder.
ＣＩ！５１ （２６）（２η１２８）（２９＋ ０３１
ハ、各ホ７ ヘａ傷ａａａυ＋２２１ＣＩ’３１（２
４１カｂ （７）がスの流量をコントロールするコント
ローラである。CI! 51 (26) (2η128) (29+ 031
Ha, each ho7 hair aaaυ+221CI'31(2
41 (7) is a controller that controls the flow rate of the bath.
Ｃ３１）ないしく４３は各ガスの通路を開閉するバルブ
である。C31) to 43 are valves that open and close passages for each gas.
上記のようなプラズマＯＶ’Ｄ装置にて、静電潜像担持
体を製造するには、次のような工程にてこれを行なえば
よい。In order to manufacture an electrostatic latent image carrier using the plasma OV'D apparatus as described above, the following steps may be performed.
先ず、静電潜像担持体（５）の支持体となるアルミニウ
ム製の円筒体（１）をホルダσ２上に載置する。なお、
この円筒体（１）の外側壁は超仕上がされている。First, an aluminum cylinder (1) serving as a support for the electrostatic latent image carrier (5) is placed on the holder σ2. In addition,
The outer wall of this cylinder (1) is superfinished.
次いで、カバーａ３で閉塞した後、容器（４）内の９気
を、２種類のポンプ（６）（７）でｌＸ１０−’ Ｔ
Ｏｒｒ程度まで吸引排気する。そして円筒体（１）内に
挿入され、たヒータ鰭（二て、これを２００℃〜３００
℃まで昇温する。Next, after closing with cover a3, the 9 air in the container (4) is pumped to lX10-' T by two types of pumps (6) and (7).
Suction and exhaust to about Orr. Then, the heater fin (2) is inserted into the cylindrical body (1) and heated to 200°C to 300°C.
Raise the temperature to ℃.
その後、容器（４）内（ニアルゴンガスを充満させて０
．２〜ｔＯ気圧に保持し、電極（９）と円筒体（１）と
の間（二周波数が１３．５６ＭＨｚ、電圧が５ＫＶの高
周波電力を印加して、約１０分間プラズマ放電を生起さ
せる。すると円筒体＜１）の表面に極微細な凹凸が形成
される。このように円筒体（１）の表面（＝凹凸を形成
するのは、その上（二元導電層（２）を被狛させやすく
するためである。円筒体（１）の表面に凹凸を形成した
後、前記ポンプ（６１７）ｌ二でアルボ／ガスを排出し
て、容器（４）内の圧力を再度１Ｘ１０ ’Ｔｏｒｒ
にする。After that, the inside of the container (4) (filled with nitrogen gas and
．． A plasma discharge is generated for about 10 minutes by maintaining the pressure at 2 to tO and applying high frequency power with a dual frequency of 13.56 MHz and a voltage of 5 KV between the electrode (9) and the cylinder (1). Very fine irregularities are formed on the surface of the cylindrical body <1). The reason for forming the surface (= unevenness) of the cylinder (1) in this way is to make it easier to cover the binary conductive layer (2) thereon. After that, the albo/gas is discharged using the pump (617) and the pressure inside the container (4) is reduced to 1X10'Torr again.
Make it.
次いで、容器（４）内（−モノシランガスを２Ｌ１０Ｃ
Ｃ／分、水素ガスをＩ Ｑ ｃｃ／分、ν′ボランガス
を５ｏｏｘ１ｏ ｏｏ／分、酸累ガスを１Ｑ ００１
分の流量で導入して、圧力を１’ｌ’ｏｒｒに保持する
。Next, in the container (4) (-2L10C of monosilane gas
C/min, hydrogen gas at I Q cc/min, ν' borane gas at 5oox1ooo/min, acid accumulation gas at 1Q 001
The pressure was maintained at 1'l'orr.
このように各ガスを導入しつつ前記と同様に約２時間プ
ラズマ放電を生起させる。この際、未反応のガスは図示
せぬパルプから排出され、容器（４）内の圧力は常に１
’Ｉ’ｏｒｒに保持される。そうすると、円筒体（１）
の表面に厚さが２０μｍの水１化アモルファスシリコン
層（２）が形成される。While each gas is introduced in this manner, plasma discharge is generated for about 2 hours in the same manner as described above. At this time, unreacted gas is discharged from the pulp (not shown), and the pressure inside the container (4) is always 1.
It is held in 'I'orr. Then, the cylinder (1)
An amorphous silicon layer (2) having a thickness of 20 μm is formed on the surface of the substrate.
その後、前記と同様Ｃ二し℃、容器（４）内（＝残留す
るガスを排気する。次いで、容器（４）内にポリスチレ
ンモノマーのガスを１０ ［１ｃｃ／分の流量で導入し
、気圧を１’ｌ’ｏｒｒ（＝保持しつつ、前記と同様に
して１０分間プラズマ放電をさせると、プラズマ重合に
より厚さが５μｍ程度のポリステ・レン重合体（二でな
る透明絶縁層（３）が形成される。Thereafter, the temperature was raised to 2°C as above, and the remaining gas inside the container (4) was evacuated.Next, polystyrene monomer gas was introduced into the container (4) at a flow rate of 10 [1 cc/min, and the atmospheric pressure was increased. When plasma discharge is performed for 10 minutes in the same manner as above while holding 1'l'orr (=), a transparent insulating layer (3) consisting of a polystyrene polymer (2) with a thickness of about 5 μm is formed by plasma polymerization. be done.
而して、円筒体（１）を容器（４）から取り出せは、首
１１！ ｉ 佼担指体（５）の完成品を得ることができ
る。So, take out the cylinder (1) from the container (4)! Neck 11! i A completed product of the pedestal body (5) can be obtained.
なお、有機物モノマーをプラズマ重合させると、次のよ
うな特徴を有する重合体が形成される。先ず、分子か高
度（＝架橋された網目構造を有するため、面密度となり
、剛性、耐薬品性、耐熱性に富む。また、細目構造が原
因となって、一般に非晶質である。更に、ピンホールが
でき難い。In addition, when an organic monomer is subjected to plasma polymerization, a polymer having the following characteristics is formed. First, because it has a highly cross-linked network structure, it has a high areal density, high rigidity, chemical resistance, and heat resistance.Also, due to its fine structure, it is generally amorphous.Furthermore, Pinholes are difficult to form.
なお、有機物としでは、ガス化しトいことと、その重合
体が透明で高抵抗かつ耐摩耗性に富んでいればどのよう
なものでもよいが、経済性の点から、ポリスチレンやポ
リアセチレンが最も適している。Note that any organic substance may be used as long as it does not easily gasify and its polymer is transparent, has high resistance, and is highly abrasion resistant, but polystyrene and polyacetylene are most suitable from an economic point of view. ing.
（へ）発明の効果
本発明では、）Ｌ導電層の表面に、プラズマ重合Ｅ”Ｃ
有機物の透明絶縁層を形成するので、透明絶縁層は元導
尼層上に堅固に被着される。また、このようにし”Ｃ形
成された透明絶縁層は、耐薬品性、剛摩耗性に富むと共
に、ピンホールは殆んど存在しない。従って、高品質の
静電潜像担持体を得ることができる。(f) Effects of the invention In the present invention, plasma polymerized E"C is applied to the surface of the L conductive layer.
Since a transparent insulating layer of organic material is formed, the transparent insulating layer is firmly adhered to the organic layer. In addition, the transparent insulating layer formed in this way has excellent chemical resistance and hard abrasion resistance, and has almost no pinholes. Therefore, it is possible to obtain a high-quality electrostatic latent image carrier. can.
吏（二、有機物上ツマ−な、アモルファスシリコンを形
成する容器と同一の容器内で形成するので、支持体をハ
ンドリングする必要がすく、生ｕＭ効率も向上する。2. Since it is formed in the same container as that used to form amorphous silicon, which is difficult to use for organic substances, it is less necessary to handle the support, and the production uM efficiency is also improved.
史（二また、有機物としてポリスチレン若しくはボリア
セブーレンを使用するので、安価（−製造“４ることが
できる。Furthermore, since polystyrene or boriaceburene is used as the organic substance, it can be manufactured at low cost.
図面はいずれも本発明の一実施例を示し、第１図は静電
潜像担持体の斜視図、第２図はその部分拡大断面図であ
る。第３図はプラズマ０ＶＤ装置の一部断面斜視図、第
４図はその模式図、である。
（１）・・・支持体（円筒体） 、 （２１・・・水素
化アモルファスシリコン層（ｆｔ、導電層） 、（３）
・・・透明絶縁層、（４）・・・容器、（５）・・・静
ｍ：潜便Ｊ［１持体、（９１・・・電極、α６）・・・
高周波電源、ｆｌｌｆ２和ＩＩ １２２１咀東・・・各
種ガスボンベ。The drawings all show one embodiment of the present invention, with FIG. 1 being a perspective view of an electrostatic latent image carrier, and FIG. 2 being a partially enlarged sectional view thereof. FIG. 3 is a partially cross-sectional perspective view of the plasma 0VD device, and FIG. 4 is a schematic diagram thereof. (1) Support (cylindrical body), (21... Hydrogenated amorphous silicon layer (ft, conductive layer), (3)
... Transparent insulating layer, (4) ... Container, (5) ... Static m: Submerged stool J [1 carrier, (91 ... Electrode, α6) ...
High frequency power supply, fllf2wa II 1221 Kuitong...Various gas cylinders.
Claims (1)
を主成分とする光導電層と、有機物質（二でなる透明絶
縁層とが積層形成される静電潜像担持体の製造方法にお
いて、 シランガスが導入される容器内に支持体を位置せしめ、
プラズマ放電によりこの支持体表面にアモルファスシリ
コンを主成分とする光導電Ｒ１を形成した後、前記容器
内に有機物上ツマ−のガスを導入し、再度プラズマ放電
させることによりこの七ツマ−をプラズマ重合させて、
前記）°Ｃ導電層の表面を前記有機物の本合体にて被覆
することを特徴とする静電潜像担持体の製造方法。 ２、杓機物が＋Ｊ？リスブーレン若しくはポリアセチレ
ンである特許請求の範囲第１項記戦の静電潜像相持体の
製造方法。[Claims] 1. An electrostatic latent image carrier in which a photoconductive layer containing amorphous silicon as a main component and a transparent insulating layer consisting of an organic material (2) are laminated on a conductive support. In the manufacturing method, a support is placed in a container into which silane gas is introduced;
After forming a photoconductive layer R1 mainly composed of amorphous silicon on the surface of this support by plasma discharge, a gas containing an organic substance is introduced into the container, and plasma polymerization of this layer is performed by plasma discharge again. Let me,
A method for manufacturing an electrostatic latent image carrier, characterized in that the surface of the above-mentioned 0.degree. C. conductive layer is coated with the main body of the organic substance. 2. Is the ladle +J? A method for producing an electrostatic latent image carrier according to claim 1, which is lisburene or polyacetylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8948283A JPS59214859A (en) | 1983-05-20 | 1983-05-20 | Manufacture of electrostatic latent image bearing body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8948283A JPS59214859A (en) | 1983-05-20 | 1983-05-20 | Manufacture of electrostatic latent image bearing body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59214859A true JPS59214859A (en) | 1984-12-04 |
Family
ID=13971951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8948283A Pending JPS59214859A (en) | 1983-05-20 | 1983-05-20 | Manufacture of electrostatic latent image bearing body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59214859A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60221766A (en) * | 1984-04-18 | 1985-11-06 | Stanley Electric Co Ltd | Electrophotographic sensitive body |
| US4738912A (en) * | 1985-09-13 | 1988-04-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon transport layer |
| US4741982A (en) * | 1985-09-13 | 1988-05-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member having undercoat layer of amorphous carbon |
| US4743522A (en) * | 1985-09-13 | 1988-05-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US4749636A (en) * | 1985-09-13 | 1988-06-07 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US4797338A (en) * | 1986-09-16 | 1989-01-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| US4810606A (en) * | 1986-07-07 | 1989-03-07 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| US4851313A (en) * | 1986-06-10 | 1989-07-25 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same |
| US4863821A (en) * | 1986-07-07 | 1989-09-05 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon |
| US4882256A (en) * | 1986-10-14 | 1989-11-21 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer comprising amorphous carbon |
| US4886724A (en) * | 1987-03-09 | 1989-12-12 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer and process for manufacturing the same |
| US5000831A (en) * | 1987-03-09 | 1991-03-19 | Minolta Camera Kabushiki Kaisha | Method of production of amorphous hydrogenated carbon layer |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
-
1983
- 1983-05-20 JP JP8948283A patent/JPS59214859A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60221766A (en) * | 1984-04-18 | 1985-11-06 | Stanley Electric Co Ltd | Electrophotographic sensitive body |
| US4738912A (en) * | 1985-09-13 | 1988-04-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon transport layer |
| US4741982A (en) * | 1985-09-13 | 1988-05-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member having undercoat layer of amorphous carbon |
| US4743522A (en) * | 1985-09-13 | 1988-05-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US4749636A (en) * | 1985-09-13 | 1988-06-07 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US4851313A (en) * | 1986-06-10 | 1989-07-25 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same |
| US4810606A (en) * | 1986-07-07 | 1989-03-07 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| US4863821A (en) * | 1986-07-07 | 1989-09-05 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon |
| US4797338A (en) * | 1986-09-16 | 1989-01-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member comprising charge generating layer and charge transporting layer |
| US4882256A (en) * | 1986-10-14 | 1989-11-21 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer comprising amorphous carbon |
| US4886724A (en) * | 1987-03-09 | 1989-12-12 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer and process for manufacturing the same |
| US5000831A (en) * | 1987-03-09 | 1991-03-19 | Minolta Camera Kabushiki Kaisha | Method of production of amorphous hydrogenated carbon layer |
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