JPS59211566A - Electroless solder plating method - Google Patents
Electroless solder plating methodInfo
- Publication number
- JPS59211566A JPS59211566A JP8424883A JP8424883A JPS59211566A JP S59211566 A JPS59211566 A JP S59211566A JP 8424883 A JP8424883 A JP 8424883A JP 8424883 A JP8424883 A JP 8424883A JP S59211566 A JPS59211566 A JP S59211566A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- solder plating
- bath
- electroless
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は無′邂解はんだめつきを施す方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for applying non-decomposition solder plating.
はんだめつ@は防錆上の点から、また、各他機器部品の
祠立作業を能率よくするために近年電子機器、精密機器
、自動車などの部材に広範に施されるようにな、りた。Soldering has come to be widely applied to parts of electronic equipment, precision equipment, automobiles, etc. in recent years for the purpose of preventing rust and improving the efficiency of repair work for other equipment parts. It was.
はんだめっきを施すKは、電気めっき法と無電解めっき
法とが、林られるが、電気めつき法は被めっき体の杉放
いかんによって均一に′I4L着させることができない
場合がめシ、特にパイプ状などの岐め?き、体の内部や
侑造上内側に空所を有する岐めっき体の内部に対しては
電気めっきによつ1めつきを行なうことができなかった
。There are two methods of solder plating: electroplating and electroless plating, but the electroplating method is used when it is not possible to apply the solder uniformly due to the cedar wood of the object to be plated, especially on pipes. A crossroads such as a state? However, it was not possible to perform electroplating on the inside of a plated body having voids inside the body or on the inside of the body.
さらに電気4%L性を有さない鼓めっき体やプリント基
敬Igl路などにおける電気的非短絡部分に □もめつ
きすることができなかった。Furthermore, it was not possible to plate electrically non-short-circuited parts such as drum plating bodies and printed Igl circuits that do not have electrical 4% L properties.
無゛亀解はんだめつき法は飲めつき体が複雑な構造を有
する空所を有し1(・ても、その構造体内部にまではん
だめっきを施すことができ、また、非電気?W導往の破
めっき体や電気的非短絡部分圧もはんだめっきを施すこ
とができる。しかし、従来の無′「α解はんだめつき法
はめつき速度が小δく、かつ、+uられる板温めっき厚
みが3〜4μmであり、さらにはんだめっき屑の素地と
の密着性は必ずしも十分でなかった。とくにめつき速度
を大として、めっき厚みを犬にすると、めつさ仕上面は
粗大結晶面となり、密着性がいっそう低下した。In the non-mechanical soldering method, solder plating can be applied to the inside of the structure even though the body of the receptacle has a cavity with a complicated structure, and it is also non-electrical. Solder plating can also be applied to broken plated parts and electrically non-short-circuited partial pressure.However, the conventional non-alpha solution soldering method requires a small plating speed and a board temperature that increases +u. The plating thickness was 3 to 4 μm, and the adhesion of the solder plating scraps to the substrate was not necessarily sufficient.Especially, when the plating speed was increased and the plating thickness was increased, the finished surface of the plating was a coarse crystal surface. As a result, the adhesion was further reduced.
本発明者は析出したはんだめっき層の粒子が微細で、か
つ、密着性よくめつきでき、また破めつき体の内部外部
一様に勾−性のよい無電解はんだめっきを施し優る方法
を提供するよう研死した結果、少くとも二段階で、かつ
、段階をホ1−るごとにその段階に用いられるめっき浴
の濃度なtriJ段bカのりれよりも高めて無′【α解
めつきを行なうことによりイセられるめっきj−はいっ
そうち缶となり、密着性もよく、厚いはんだめっきが優
られるとの知見を野1本兄明を完成するにいたった。The present inventor provides an excellent method in which the particles of the deposited solder plating layer are fine and can be plated with good adhesion, and electroless solder plating with a good gradient is uniformly applied to the inside and outside of a broken body. As a result of the grinding, the concentration of the plating bath used for each step was increased to a level higher than the concentration of the plating bath used in that step, and the concentration of the plating bath used in that step was increased to zero By doing this, the solder plating becomes more solid, has better adhesion, and the knowledge that thicker solder plating is superior led to Noichimoto's completion.
すなわち、本発明の冒旨は少くとも二段階で無゛亀町t
はんだめっきを、段階を性るjυに順次めっき浴の金目
成分IA曳を高めて行なうことを特許
徴とする無% t’+¥はんだめつ転注である。That is, the gist of the present invention is to solve the problem in at least two stages.
This is a patented solder plating process in which the metal component IA of the plating bath is successively increased in stages.
このように無′亀解はんだめつきを桜数段階で行/よう
には、最初の無電解はんだめっき浴の金閤成分諜度は最
終段階のめつき浴の濃度のi〜化とすることが好ましい
。成功の1:j、階でのめつき浴の山開が最終↓父南で
のめつき浴のそれに対ると、初明の無電解はんだめつき
の厚さが余りにも薄すぎて好ましくな(・。In this way, the electroless solder plating is carried out in several steps, and the concentration of the metal component in the first electroless solder plating bath is the concentration of the final step plating bath. It is preferable. Success 1: j, Yamagai of the plating bath on the floor is the final ↓ Compared to that of the plating bath at Chinan, the thickness of the electroless solder plating at Hatsume is too thin and undesirable. (・.
無′蹴)仔(1んだめつき浴には、慣用の塩化鉦易、塩
化鉛、チオ尿素の毘合市液を主成分とするものが用いら
れるtよか、不発明番が発明し本日特許出願した無’t
E l=#はんだめっき浴が用いられる。For the bath, the main ingredients are the conventional chloride solution, lead chloride, and thiourea. No patent application filed.
E l=# solder plating bath is used.
不発明者が発明した無゛紙解はんだめつき浴はホウフッ
化錫、ホウフッ化鉛、ホウノツ化水素酷、チオ尿素、還
元削及び心安に応じて#面活性剤等を添加するもので、
この無−P+lFはんだめっき浴を前記塩化鶴−塩化鉛
−チオ尿素を主成分とするめつき浴に代えて用(・れば
、一段と低温域でめっき浴をj’J!6製できるので、
調製が′8易であること、および無゛龜解めつき作業に
おいて、破めつき捧をめつき浴に浸潤したさい、めっき
浴の湿度低下によるめつき浴成分の沈殿析出と、これに
伴なうトラブルが避けられること、さらに得られるめっ
き層の粒子は微細で密着性がよく、折り曲げてもめつき
1曽が剥市すること4J(ないなどの諸点で有利である
。The paper-free soldering bath invented by the inventor contains tin borofluoride, lead fluoroboride, hydrogen borofluoride, thiourea, reduction cutting, and #surfactants depending on safety.
If this P+lF-free solder plating bath is used instead of the plating bath whose main components are crane chloride, lead chloride, and thiourea, the plating bath can be made at a lower temperature.
It is easy to prepare, and when the plating solution is infiltrated into the plating bath during the fast dissolving process, precipitation of the plating bath components due to a decrease in the humidity of the plating bath and the accompanying precipitation are avoided. It is advantageous in that such problems can be avoided, the particles of the resulting plating layer are fine and have good adhesion, and the plating does not peel off even when bent.
初段時で被めっき体を浸漬する無′亀りすめつさ浴の湿
度け、浴組成によって異なるが、めつき俗が常温におい
τもめつき浴成分の沈殿を析出しな(・かき゛シ常渇で
あることが好ましい。もし沈殿を析出するときは、沈p
すが消失するまでより高温として、沈殿によるめっき面
のトラブルを防止することが好葦しい。w段階における
肢めつき俸をめっき浴に浸漬する時間は特に限定されな
いが5〜30秒間で十分である。Although it varies depending on the humidity and bath composition of the non-resistance bath in which the object to be plated is immersed in the first stage, the plating bath has an odor at room temperature to prevent precipitation of the plating bath components. If a precipitate is to be precipitated, the precipitate p
It is preferable to raise the temperature to a higher temperature until the sludge disappears to prevent problems with the plated surface due to precipitation. The time for immersing the limb-plated bale in the plating bath in step w is not particularly limited, but 5 to 30 seconds is sufficient.
不発ψ」は上述のように構成されているので、岐めつき
体を平滑に、かつ、均−住よく、さらに′#着性に秀九
たはんだめつきを施すことができる。Since the non-explosion ψ is constructed as described above, it is possible to apply solder plating to the curved body with a smooth and even fit, and with excellent adhesion.
これは下記理由によるものである。すなわち、無電解を
ゴんだめつ@においては、七の浴の成分である顧、鉛が
自己触媒性を有さないので、(/r)被めっき体との化
学的置挾反地、(ロ)ね元剤による還元反応、(ハ)こ
れらの反LLの微視的局部の電位差に基づく局部′ai
、流による′電解析出がおこなわれるものとされ1いる
。彼めっき捧(金−)を無′亀)好はんだめっき浴に浸
漬直後に起こる反LEは、(イ)の化学的叙侠反比であ
るが、この反応は破めつき体面上に存在する多数の局部
陽極と局部陰極間にで行なわれるので、反応速度が大き
く、優られるめっき増は多孔實皮膜となる。This is due to the following reasons. In other words, in the case of electroless electrolyte, lead, which is a component of the seventh bath, does not have self-catalytic properties, so (/r) chemical placing reaction with the object to be plated, ( b) Reduction reaction by the primary agent, (c) Local 'ai based on the microscopic local potential difference of these anti-LLs.
It is assumed that electrolytic deposition is carried out by means of a current. The anti-LE that occurs immediately after immersing a solder plate (gold) in a solder plating bath is a chemical comparison of (a), but this reaction is caused by the large number of cracks that exist on the surface of the solder. Since the plating is carried out between the local anode and the local cathode, the reaction rate is high and the superior plating increase results in a porous film.
その結果鼓めつき俸を長時聞この無電解めっき浴に浸漬
すれば、局部隘極上に析出する結晶が戎持して粗大結晶
質となりめっき面は粗暴な仕上は曲となることを避けら
れない。As a result, if the plating plate is immersed in this electroless plating bath for a long time, the crystals precipitated on the local surface will be held together and become coarse crystalline, and the plated surface will have a rough finish and curves can be avoided. do not have.
本発明は多段階に希博濃曳のめつき浴から順次蔀厚なめ
つき浴にt& mすることにより、取初に(イ)の化学
的14侠反地を可及的速かに終らせ1、次の段階の〆J
漬に移るので、第1段階の浸漬によって形収される岐め
つき捧面上の微細結晶が成長しないうちKその反応を終
結させ、引き続いて第2段階の浸漬により前記(ロ)と
(ハ)の反応による無′屯屏めっきのはんだ粒子を析出
させるので、fυられるめっき層はち密平滑であり、均
一性よく、かつ密着註にすぐれている。The present invention is designed to quickly complete the chemical 14 battles in (a) at the beginning by performing T&M in multiple stages from a thick plating bath to a thick plating bath. 1. Next stage finale
Since the process proceeds to dipping, the reaction is terminated before the microcrystals formed on the forked surface formed by the first dipping are grown, and then the above (b) and (c) are completed in the second dipping step. ), the solder particles are precipitated without a layer of plating, so the resulting plating layer is dense and smooth, has good uniformity, and has excellent adhesion.
希薄なめつき浴から濃厚なめつき浴に移行する段階数F
1通常2段階でほぼ目的が遂行される。Stage number F of transition from dilute licking bath to rich licking bath
1 The purpose is usually accomplished in two steps.
また、不党明によれば、被のつき体が七の偽造上内部を
外壁で俺われている場合でも、その内部、例えばパイプ
、蛇管の内撫面、あるいは構造上咳雑な杉状を有する内
側部分におい1も無′亀解めつき浴が自由にmI人でき
るかき゛シ空tノrの内周側面にも十分に無゛颯解はん
だめつきを施すことができる。Furthermore, according to Futomei, even if the inside of the covered body is covered by an outer wall due to the fabrication of seven, the inside of the body, such as the inside of a pipe or a serpentine pipe, or the structure of a cedar-like structure, Since the inner part of the solder plate has a free melting bath, it is possible to apply a sufficient heatless soldering bath to the inner circumferential side surface of the empty hole.
つきに本発明を実施例について説明するが、本発明はこ
れら罠よって限定されるものではない。The present invention will now be described with reference to examples, but the present invention is not limited by these traps.
実施例1
下記組成を有する無′亀t;mはんだめっき浴を調製し
た。Example 1 A free solder plating bath having the following composition was prepared.
ホウフッ化第−錫 (J、 1モル/lホウフ
ッ化船 0.04ttチオ尿素
2,0μ
次亜リン酸ナトリウム 0.2〃EDTA
O,05N非イオン界@活性剤
0.5 if’ / l(ポリエチレングリコール
ノニルフェノールエーテル)
慢られ1こ無′亀解はんだめっき浴(これをめつき原浴
という)の一部を水で希釈して、めつき原、1
浴の鋺叫戎分の濃1kか百になるようにして右釈浴を−
“4製した。Tinn borofluoride (J, 1 mol/l fluoroborate 0.04tt Thiourea
2.0μ Sodium hypophosphite 0.2〃EDTA
O,05N nonionic field activator
0.5 if'/l (polyethylene glycol nonyl phenol ether) Dilute a part of the solder plating bath (this is called the plating base bath) with water to make the plating base. Ushaku bath with a concentration of 1k or 100 for the amount of sukiyaki.
“I made 4.
つ(・で黄銅&(100x100xO,4m)を脱Qj
i 、酸洗浄、水洗してのち、第1段階として前記希釈
浴に室@(18℃)で10秒+11i浸漬し、被めっき
体面に極め″を薄いがち田な無電附けんだめつきj−を
形層させた。つぎに第2段階としてこの黄銅板を1′J
ii記めつさ原浴に80℃で15分lhiυでビ1した
ところ、合金組成がSl 56九、p b 4a 96
で、厚みが2.8μI11 のはんだめっきが山、ら
れた。このようにめっきされた黄銅板の対角線の交点(
中心点という)及び対角線上中心点から4 Qllの距
離にを)る4点計5点の個所のめつさ1曽のj厚みをi
lI!iuした。Remove brass & (100x100xO, 4m) with
After washing with acid and water, the first step is to immerse the plate in the dilution bath for 10 seconds at room temperature (18°C) to apply a thin, non-electro-applied Kendamezuki j- to the surface of the body to be plated. In the second step, this brass plate was
ii) When exposed to the Metsusa raw bath at 80°C for 15 minutes, the alloy composition was found to be Sl 569, p b 4a 96
Then, a pile of solder plating with a thickness of 2.8μI11 was deposited. The intersection of the diagonals of the plated brass plate (
The thickness of the 4 points at a distance of 4 Qll from the center point) and the center point on the diagonal) is 1
lI! iu did it.
その結果、中心点が2.6μm1その他の点はそれぞれ
2.9μIn、3.0μrus2.8μ”%2.7μm
であり、中心点との偏差値は0.1へ・0.4μInで
めった。As a result, the center point is 2.6μm, the other points are 2.9μIn, 3.0μrus2.8μ”%2.7μm, respectively.
The deviation value from the center point was 0.1/0.4 μIn.
また、めつ@結晶はに+¥llIでその大きさは0.5
〜2.0μInでめった。Also, the size of Metsu@CrystalHani+¥llI is 0.5
~2.0 μIn was found.
比較例1
実施例1に用いためつきj基浴中に、実施例1に用いた
と同じような黄銅板を、第1段階の布ル(浴に浸ff1
fする操作をしない以外はすべて実施例1と同じ鉛1午
で無’t441rfはんだめっきをおこなった。Comparative Example 1 A brass plate similar to that used in Example 1 was placed in the base bath used in Example 1.
No-t441rf solder plating was carried out using the same lead as in Example 1 except that the operation of f-f was not performed.
fjられためつ@jψの合金和成はSn 59丸、〜1
0(pのでめった。また、めっきされた黄鉤板の厚みを
実施例1によつ’(lυた黄−板の厚み測定°に準じて
測定した結果、中心点は2.92m1対角線上中心点よ
シ4 crpr cr)i(4躯でのめつき厚みは8.
2.3.6.2.4.4・、2μmで第5す、中心虞と
の(119ルは−0,5〜1.3μmで4うった。The alloy Kazsei of fj @jψ is Sn 59 circles, ~1
In addition, the thickness of the plated yellow plate was measured according to Example 1, and the center point was 2.92 m1 on the diagonal line. Point Yoshi 4 crpr cr) i (The plating thickness with 4 pieces is 8.
2.3.6.2.4.4., 2 μm, 5th hole, center point (119) was −0.5 to 1.3 μm, 4 points.
実施例1と比V、←111を対比すれは明らかなように
1失態例1によつ1優ためつきj針を格技する打!晶は
比軟ト11によって饅たそれよシも微却1で、密着性よ
く、かつめっき層の厚みは中心点に対して偏差値が小さ
く、平fi?で均一でるることが認められた。Comparing Example 1 and ratio V, ← 111, it is clear that 1 blunder example 1 is a 1 superior tame j needle attack! The crystal has a softness of 11, and the thickness is slightly 1, and the adhesion is good, and the thickness of the plating layer has a small deviation from the center point, and the thickness is flat. It was observed that the results were uniform.
シミ施tZ12
下記組成を有する慣用の無゛屯廣はんだめつき浴(以下
めつ@原浴という)を調装した。Staining tZ12 A conventional non-soldering bath (hereinafter referred to as Metsu@raw bath) having the following composition was prepared.
塩化第−銚 207/13
塩化船 11//
チオ原票 110//l
次亜リン酸ナトリウム 209−/IEDTA、
’ 30 Nセラチン
1 〃
p HrIl、:h整(8Cl) ¥)Hl、
211られたV)つき原酒を90℃萱で加湿しτ完全に
透明なん液としたものの一部を水で希釈して、めつ口(
浴C,戯國収分誤tすを1になるようrC哨。Chloride 207/13 Chloride ship 11// Thio original 110//l Sodium hypophosphite 209/IEDTA,
'30 N Seratin
1 〃 p HrIl, :h adjustment (8Cl) ¥) Hl,
The unprocessed sake with 211 V) was humidified at 90℃ to make a completely transparent liquid, and a part of it was diluted with water to make Metsuguchi (
Bath C, play rC so that the error rate becomes 1.
0 u<Hjケ〜;シンした。0 u<Hjke~;
つきに実Mq世j1に用いたと同じ大きさの黄銅板を実
施例IK嘔じてHIJ処理して、第1段階としてロリ記
希釈浴中に正編(18℃ンで15秒曲浸瀘した。七の結
果黄銅似にはち密で極めて薄(・めっき層が優られた。Finally, a brass plate of the same size as that used in Example IK was treated with HIJ, and as the first step, it was immersed in a dilution bath for 15 seconds at 18°C. As a result of step 7, it was dense and extremely thin, similar to brass (the plating layer was excellent).
この黄銅板を水洗しな(・でさらに第2段階としてnl
」記めつき1阜浴中に90℃で15分IMi浸漬したと
ころ、合金組成がsn 52 X% pb” 96であ
シ、結晶粒子の大きさが0.5〜l、 7 p mでめ
るはんだめつさ;ンIが1−7られた。このめっきされ
た黄鉛&面上のめつき層の厚みを実施例1に串じて測定
したところ、中心点では2,4μ■1、対角線上中心点
から4cmの距離の点では2.8.2、’l、2.7.
2.9μmであシ、中心点に対する偏差1直は0.3〜
0.5μmであった。Do not wash this brass plate with water.
When the alloy was immersed in IMi for 15 minutes at 90°C in a bath marked with ", the alloy composition was sn 52 The solder thickness was 1-7.The thickness of the plated layer on the plated yellow lead surface was measured using the same method as in Example 1, and it was found to be 2.4μ■ at the center point. 1. At a point 4 cm away from the center point on the diagonal line, 2.8.2, 'l, 2.7.
It is 2.9μm, and the deviation from the center point is 0.3~
It was 0.5 μm.
比較例2
実施例2に用いためつきj象洛中に、実施例2に用いた
と同じような黄銅板を第1段階として希釈浴に浸漬する
操作をしない以外はすべて実施例2と同じ条件で無電解
はんだめっきをおこなった。Comparative Example 2 A brass plate similar to that used in Example 2 was washed under the same conditions as Example 2, except that the same brass plate as used in Example 2 was not immersed in the dilution bath as the first step. Electrolytic solder plating was performed.
5〜10μmと粗大であシ、めっき層表面は一目瞭然粗
動であった。黄銅liR面上のめつき層の厚みを実施例
2に帖じて求めたところ、中心点では2.6μmであり
、対角線上中心点から4crnの距離では8.6μm、
2.4μm、(7,9μm12゜5μmであシ、中心点
に対する偏差値は−1,7μn)〜+1.0μmでめっ
た。The roughness was 5 to 10 μm, and the surface of the plating layer was clearly rough. When the thickness of the plating layer on the brass liR surface was determined according to Example 2, it was 2.6 μm at the center point, and 8.6 μm at a distance of 4 crn from the center point on the diagonal line.
2.4 μm, (7.9 μm 12° 5 μm, deviation value from the center point -1.7 μm) to +1.0 μm.
以上のことから実施例2と比較例2とを対比すると、実
施例2によって得ためつ@層の結箭隨憔は比軟例2のそ
れよシも微細で、かつ、中心点に対する6、1差値が小
さく、密Xi a VC秀れ、平滑で均一であると11
eめられた。Comparing Example 2 and Comparative Example 2 from the above, it can be seen that the grain size of the @ layer obtained in Example 2 is finer than that of Comparative Example 2, and 6. 1. If the difference value is small, dense Xi a VC is excellent, smooth and uniform, 11
I was praised.
実施例3
火D’vh fl・l I K用いたと同じめっき原酒
を3分して、その一部はめつきIJJ(浴そのままとし
、残り残りの一部をiの濃度に希釈した。Example 3 The same plating stock as used was divided into 3 parts, a part of which was left in the plating IJJ (bath), and the remaining part was diluted to the concentration of i.
実施’ryli I K LHいたと同じ黄銅板を、最
初に第1段階として最も希薄なめつき浴に常湿で10秒
l1つ(・で第2段階として残りの2缶に希釈しためつ
き浴に30℃で30秒1iAI浸漬し、さらに第3段陸
?としてめっきj紙浴に80℃で15分間浸6iシた。The same brass plate as was used was first diluted into the diluted plating bath for 10 seconds at normal humidity in the diluted plating bath (as the second step). It was immersed in AI for 30 seconds at 30°C, and then immersed in a plating paper bath for 15 minutes at 80°C as the third step.
f騨られためつき層はきわめて冶泊住よく、ち台平滑で
、厚さは2.8μm1合余組合金5n55%、pb45
96であった。The textured layer is extremely smooth and smooth, with a thickness of 2.8 μm and 55% alloy, PB45.
It was 96.
実が!]t?リ 4
9.6施例16二用いたと同じめつき原酒の一笥iを採
つ1、七の一部を水で希釈して金目収分嬢1にを7とし
た。The fruit! ]t? 4 9.6 Take the same amount of unblended sake as used in Example 162 and dilute part of 1 and 7 with water to make 1 to 7.
第1段階としてこの希釈めっき浴に、外径25關、肉厚
I・5面の一バイブをスノくイラル状に加工したものを
、脱tJtn 、水洗、1載抗、水洗したのち常湿で1
5秒向浸積し、ついで第21友ト古としてめつさ原酒に
80℃で15分114i浸τaした。In the first step, a vibrator with an outer diameter of 25 cm and a wall thickness of I/5 sides processed into a cylindrical shape was placed in this diluted plating bath, after which it was removed from TJtn, washed with water, washed with water, washed with water, and then placed at normal humidity. 1
It was soaked for 5 seconds, and then soaked for 114 hours at 80°C for 15 minutes in Metsusa unblended sake as the 21st batch.
浸油後、パイプをl7Jh+ L、て内部ン鮪、祭した
ところ密措性よく平mKち輩にはんだめっきが施されて
いた。After immersing the pipe in oil, I placed the pipe inside the pipe and found that it had been solder-plated in a well-protected manner.
特許出’7ユ1人 巧ミ式会社 東以阪金1℃堆人弁地
士 棧 野 W 司Patent issued by 1 person, Takumi Shikisha Toisakakin 1°C Bench Attorney W. Tsukasa Sono
Claims (1)
つ、段階をAするごとに順次無′亀暦はんだめっき浴の
金叫戎分濃反を高め1行なうことを特徴とする無電解け
んだめ′)き方法(2) 特許請求の範囲第1項でi
゛亀解んだめっき工程を二段階で行なうことを特徴゛と
する無′屯)Wはんだめっき方法 (3)特許請求の範囲第2項で、第一段階の無電解はん
だめっき浴の金&la収分濃度が第二段階の無電j1ユ
んだめつき浴顧1延のE〜lであることを特徴とする無
゛魁)奔はんだめっき方法(4) 待6千−氷の範囲
第1項から第3項におい1、無411イはんだめっき浴
がホウフッ化錫、ホウフッ化錫、チオ尿素及び還元剤を
含むことを特徴とする無゛−1i8はんだめっき方法[Claims] (13) The electroless solder plating process is carried out in at least two stages, and each time the step A is performed, the concentration of the electroless solder plating bath is increased. Electroless sharding method (2) In claim 1, i
``W solder plating method characterized by carrying out the electroless plating process in two steps'' (3) Claim 2 states that gold & la in the electroless solder plating bath in the first step. Free solder plating method characterized in that the yield concentration is E to L in the second stage electroless plating bath (4) Range of 6,000 - ice Item 1 1. A non-1i8 solder plating method, characterized in that the non-411 solder plating bath contains tin borofluoride, tin borofluoride, thiourea, and a reducing agent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8424883A JPS59211566A (en) | 1983-05-16 | 1983-05-16 | Electroless solder plating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8424883A JPS59211566A (en) | 1983-05-16 | 1983-05-16 | Electroless solder plating method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59211566A true JPS59211566A (en) | 1984-11-30 |
JPS6217029B2 JPS6217029B2 (en) | 1987-04-15 |
Family
ID=13825155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8424883A Granted JPS59211566A (en) | 1983-05-16 | 1983-05-16 | Electroless solder plating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59211566A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997046732A1 (en) * | 1996-06-05 | 1997-12-11 | Sumitomo Light Metal Industries, Ltd. | Internally tin-plated copper pipe manufacturing method |
WO2004031447A1 (en) * | 2002-10-07 | 2004-04-15 | Tokyo Electron Limited | Method of electroless plating |
-
1983
- 1983-05-16 JP JP8424883A patent/JPS59211566A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997046732A1 (en) * | 1996-06-05 | 1997-12-11 | Sumitomo Light Metal Industries, Ltd. | Internally tin-plated copper pipe manufacturing method |
WO2004031447A1 (en) * | 2002-10-07 | 2004-04-15 | Tokyo Electron Limited | Method of electroless plating |
Also Published As
Publication number | Publication date |
---|---|
JPS6217029B2 (en) | 1987-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090038949A1 (en) | Copper plating process | |
US20070007144A1 (en) | Tin electrodeposits having properties or characteristics that minimize tin whisker growth | |
US20070158204A1 (en) | Tin and tin alloy electroplating method with controlled internal stress and grain size of the resulting deposit | |
Donten et al. | Pulse electroplating of rich-in-tungsten thin layers of amorphous Co-W alloys | |
JP2005523995A (en) | Minimizing whisker growth in tin electrodeposits | |
US2814589A (en) | Method of plating silicon | |
EP3004429A1 (en) | Electroplating baths of silver and tin alloys | |
TW562880B (en) | Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating method, and semiconductor wafer having low particle adhesion plated with said method and anode | |
JP2006009039A (en) | Tin based plating film in which growth of whisker is suppressed and forming method therefor | |
EP0198038A1 (en) | Bath and process for plating tin/lead alloys on composite substrates. | |
US3622470A (en) | Continuous plating method | |
US2457059A (en) | Method for bonding a nickel electrodeposit to a nickel surface | |
US3669852A (en) | Electroplating gold | |
JPH03236476A (en) | Manufacture of aluminium memory disk finished by flat and smooth metal plating | |
JPS59211566A (en) | Electroless solder plating method | |
US20050199507A1 (en) | Chemical structures and compositions of ECP additives to reduce pit defects | |
Blair | Silver plating | |
US2662054A (en) | Method of electrodepositing chromium directly on aluminum | |
US3037896A (en) | Masking process | |
JP6521553B1 (en) | Substitution gold plating solution and substitution gold plating method | |
US3472742A (en) | Plating nickel on aluminum castings | |
Bullough et al. | The Quantitative Adhesion of Nickel Electrodeposits to Aluminium Alloys | |
US2966448A (en) | Methods of electroplating aluminum and alloys thereof | |
JP2023069841A (en) | Metal replacement process liquid, surface treatment method for aluminum or aluminum alloy | |
CN103238184A (en) | Method for producing substrate for hard disk, and substrate for hard disk |