JPS5921074A - Semiconductor diaphragm - Google Patents
Semiconductor diaphragmInfo
- Publication number
- JPS5921074A JPS5921074A JP13079382A JP13079382A JPS5921074A JP S5921074 A JPS5921074 A JP S5921074A JP 13079382 A JP13079382 A JP 13079382A JP 13079382 A JP13079382 A JP 13079382A JP S5921074 A JPS5921074 A JP S5921074A
- Authority
- JP
- Japan
- Prior art keywords
- rigid body
- diaphragm
- central rigid
- groove
- peripheral fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 239000007787 solid Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】 との発明は圧力測定用の半導体ダイヤフラムに関する。[Detailed description of the invention] The invention relates to a semiconductor diaphragm for pressure measurement.
差圧等の圧力を測定するのに第１図に示すような周辺固
定部２を有する平板状の半導体ダイヤフラム１がよく１
史用されている。しかし−＆からこの下板法σ）崖導体
ダイー＼ｒフ“ツムｋＪ、１１７カが３００ （１ｗ。To measure pressure such as differential pressure, a flat semiconductor diaphragm 1 having a peripheral fixing part 2 as shown in FIG. 1 is often used.
It is used historically. However, from - & this lower plate method σ) cliff conductor die ＼ rfu "zum kJ, 117 ka is 300 (1w.
ｌＴ２ＯＬ：）、！二でないと良好なリニアリティを（
４）るととができない。そこで近イ１低差ＦＦをｌｌ１
ｌｌ ”ＡＩするために第２図に示す、ｈｌｌ、 ；Ｎ
体ダ・（Ａ’フワＪ・１が提案されていＺｌ。この半導
体ダイヤフラム１に周辺固定部２の内側に中心剛体３
ｋ ！ｆ’Ｊは、さらに１周辺部−ｊ！部２と１）ｉ踊
−！ １１１４心剛体５の間に溝部４を設け、この溝部
４の薄肉部５０表面にピエゾ抵抗素子６を形成して構成
されている。この半導体ダイヤフラムによれば、１ユ記
した平板ダイヤフラムに比してピエゾ抵抗素子のり工ア
リイディを低Ｎ１］−４で得ることができる。しかしそ
れも１０００ｔｉ）Ｔ２Ｏの稈屑゛までである。lT2OL:),! good linearity (
4) I can't do it. Therefore, the near-i 1 low difference FF is ll1
ll” shown in Figure 2 for AI, hll, ;N
Body DA・(A'FuwaJ・1 is proposed. Zl. This semiconductor diaphragm 1 has a central rigid body 3 inside the peripheral fixing part 2.
K! f'J is one more periphery -j! Part 2 and 1) i-odori-! A groove portion 4 is provided between the 1114-core rigid bodies 5, and a piezoresistive element 6 is formed on the surface of a thin wall portion 50 of the groove portion 4. According to this semiconductor diaphragm, it is possible to obtain piezoresistive element gluing efficiency with lower N1]-4 compared to the flat plate diaphragm described in 1. However, it is only 1000ti) T2O culm waste.
この発明の］」的は、−［−記した従来の半導体ダイヤ
フラムよりもさらに低差圧、すなわち１ｏｏｏｉａＩ■
２０以下の極低差１丁でも良好なりニアリティの得られ
る半導体ダイヤフラムを提供するにある。The purpose of this invention is to achieve a lower differential pressure than the conventional semiconductor diaphragm described above, that is, 1oooiaI
To provide a semiconductor diaphragm which can obtain good or near accuracy even with a very low difference of 20 or less.
一般に、ダイヤフラムに発生する応力σダイヤフラム厚
１．ダイヤフラＡ変位Ｗ、ダイヤフラムの大きさく径）
ｒ：；’；６’ ｉび等分布荷重−Ｐｈ）１ｊＪ汗＋
よＷＯＯ二ｘｒ・・・・・・・・・（１）ｔ３
０−〒−Ｘ ｒ゛°°゛°゛−°（２１で表わせる。Generally, the stress generated in the diaphragm σDiaphragm thickness 1. Diaphragm A displacement W, diaphragm size and diameter)
r:;';6' i Equally distributed load - Ph) 1j J sweat +
Yo WOO2
ここでダイヤフラム厚ｔをたとえばｔ２からｔｌに変更
して測定レンジを変更するのに、ｔｌ＝２ｔ２とした場
合同じ圧力を得るのに、すなわちピエゾ抵抗素子の抵抗
変化を一定にする条件σｌ＝σ２とするため」二記（２
）式より圧力ＰはＰＩ ＝ ４Ｐ２．変位Ｗ２
はＷｌ−／／２とする必要がある。Here, when changing the diaphragm thickness t from t2 to tl and changing the measurement range, if we set tl = 2t2, the conditions for obtaining the same pressure, that is, keeping the resistance change of the piezoresistive element constant σl = σ2 In order to
) formula, the pressure P is PI = 4P2. The displacement W2 needs to be Wl-//2.
一方ダイヤフラム変位Ｗ及び応力σが等分布荷重に比例
する範囲は、ダイヤフラム厚りにほぼ比例する。したが
って荷重に対する応力σが比例する範囲は、ダイヤフラ
ム厚もの２乗に反比例する。On the other hand, the range in which the diaphragm displacement W and the stress σ are proportional to the uniformly distributed load is approximately proportional to the diaphragm thickness. Therefore, the range in which the stress σ is proportional to the load is inversely proportional to the square of the diaphragm thickness.
すなわちダイヤフラム厚ｔが薄くなるほどピエソ゛斯す
１−ｉｙの抵抗変化はノンリニアとなり逆に厚くなるほ
どリニアとなる。この発明はこの点に着目して創出され
たものである。That is, as the diaphragm thickness t becomes thinner, the piezoelectric 1-iy resistance change becomes non-linear, and conversely, as the diaphragm becomes thicker, it becomes more linear. This invention was created by paying attention to this point.
上記目的を達成するためにこの発明の半導体ダイヤフラ
ムは１表面にピエゾ抵抗素子が形成される位置に対応す
る溝部に周辺固定部と中火剛体を連接する肉厚のビーム
（梁）部を設けている。In order to achieve the above object, the semiconductor diaphragm of the present invention has a thick beam part connecting the peripheral fixing part and the medium-heat rigid body in the groove part corresponding to the position where the piezoresistive element is formed on one surface. There is.
以下１図面に示す実施例によりこの発明の詳細な説明す
る。The present invention will be explained in detail below with reference to an embodiment shown in one drawing.
第６図はこの発明の一実施例を示す半導体ダイＡ１フラ
ムの底面図、第４図はその」二面図である。FIG. 6 is a bottom view of a semiconductor die A1 flammable according to an embodiment of the present invention, and FIG. 4 is a two-sided view thereof.
Ｓｉ （シリコン）ｔ＊１ｄＧｏ（ゲルマニューム）
等の半導体単結晶で形成されるダイヤフラム本体１に肉
厚の周辺同定部２．同じく肉厚の中央剛体３、及び周辺
固定部２と中央剛体３間に設けられる溝部４を備える点
は、従来の半導体ダイヤフラムと同様である。Si (silicon)t*1dGo (germanium)
The diaphragm body 1 is formed of a semiconductor single crystal such as a thick peripheral identification portion 2. It is similar to the conventional semiconductor diaphragm in that it includes a similarly thick central rigid body 3 and a groove 4 provided between the peripheral fixing part 2 and the central rigid body 3.
ダイヤフラム１の表面の、溝部４の各辺の中火部に対応
する位置に圧力検出中相のピエゾ抵抗素子６が形成され
、さらにこのピエゾ抵抗素子６が形成される位置に対応
する溝部４に周辺固定部２と中央剛体ろを連接するビー
ム部７が設けられている。On the surface of the diaphragm 1, a piezoresistive element 6 for pressure detection is formed at a position corresponding to the medium heat part on each side of the groove 4, and a piezoresistive element 6 for pressure detection is formed in the groove 4 corresponding to the position where the piezoresistive element 6 is formed. A beam section 7 is provided that connects the peripheral fixing section 2 and the central rigid body filter.
溝部４が形成されるダイヤフラム本体１ハ第５図に示す
ように肉薄部５を持つが、ビーム部７が設けられる位置
は、第６図に示すように周辺固定部２や中央剛体６と同
じ肉厚となっている。これによυリニアリティが改善さ
れる。The diaphragm body 1 in which the groove portion 4 is formed has a thin wall portion 5 as shown in FIG. It is thick. This improves υlinearity.
なおピエゾ抵抗素子６は第７図（Ａ）の拡大図に示すよ
うにビーム部７の周辺固定部２と連接される線上及び中
火剛体６と連接される線」二に形成され。The piezoresistive element 6 is formed on a line connected to the peripheral fixing part 2 of the beam part 7 and on a line connected to the medium-heat rigid body 6, as shown in the enlarged view of FIG. 7(A).
ビーム部７の応力は第７図（Ｂ）に示すように、ピエゾ
抵抗素子６が形成される位置が最も大となる。As shown in FIG. 7(B), the stress in the beam portion 7 is greatest at the position where the piezoresistive element 6 is formed.
上記実施例において、ビーム部７の肉厚を周辺固定部２
や中央剛体５と同じにしているが、測定レンジ、溝部４
の薄肉部５との関係によｐ、第８図に示すようにビーム
部フを周辺固定部２等よりも薄肉とし２段差が生じるよ
うにしてもよい。In the above embodiment, the wall thickness of the beam part 7 is set to the peripheral fixing part 2.
and central rigid body 5, but the measurement range and groove 4
As shown in FIG. 8, the beam part may be made thinner than the peripheral fixing part 2, etc., so that there is a two-step difference in relation to the thin part 5.
また上記実施例では、ビーム部７を溝部４の各辺に設け
ているが、相対向する１対の辺のみに設けるものであっ
てもよい。Further, in the above embodiment, the beam portions 7 are provided on each side of the groove portion 4, but they may be provided only on a pair of opposing sides.
以上のようにこの発明の半導体ダイヤフラムによれば１
表面にピエゾ抵抗素子が形成される位置に対応する溝部
に１周辺固定部と中央剛体を連接する肉厚のビーム部を
設けるものであるから。As described above, according to the semiconductor diaphragm of the present invention, 1
This is because a thick beam portion connecting one peripheral fixing portion and the central rigid body is provided in the groove portion corresponding to the position where the piezoresistive element is formed on the surface.
１０００ ｒａｔｂ Ｈ２０以下の低差圧の測定が可能
であり。It is possible to measure differential pressures as low as 1000 ratb H20 or less.
しかもリニアリティの良い測定を行なうことができる０Moreover, it is possible to perform measurements with good linearity.
第１図は従来の平板状の半導体ダイヤフラムの側断面図
、第２図は従来の中央剛体付の半導体ダイヤフラムを示
す図であって同図（内はその底面図。
（均は第２図内をＩ−Ｉで切った断面図、同図（ｑは第
２図（Ｂｌのａ部分の拡大図、第６図、第４図、第５図
、第６図、第７図はこの発明の一実施例の半導体ダイヤ
フラムを示す図であって第３図はその底面図、第４図は
その上面図、第５図は第５図を１−Ｉで切断した断面図
、第６図は第３図を■−フラムの要部断面図である。
１；半導体ダイヤフラム本体、 ２：周辺固定部、 ３
−中心剛体、 ４：溝部、 ５：薄肉部、 ６Ｓピエ
ゾ抵抗素子、 ７；ビーム部。
（６）
勢１図
第２ＰｉＪ
−第、９図 第４ｍ第６図
第１図
手続補正書〔自発〕
昭和５７１−１１月１３［１
１事イ１１の人手
昭ｆ１１５７年特許願 第１３０７９３号２ 発明の名
称 半導体ダイヤフラム５ 浦−１１ケする昔
事件との関係 特許出願人
４代り１１人
１５ 補止の対象
明卸１書の図面の簡単な説明の欄
６ 補正の内容 、１丁■
）、明、細書の第６ペ・−ジの１−１から第５ （］１
−１より、第１６行目にかけて［−第１図は従来の＼１
ｆ扱状の・・・・・・半導体ダイヤフ”ｙ １１の要部
断面図である３、−１とあるを
［−第１図は従来のｒＶ根板状半導体タイ−・フラノ・
の側断面図、第２図は従来の中央剛体何の土導体ダイヤ
フフＡｉ示）図であって同図（Ａ）ｉｄぞの１■【面図
、同図（Ｂ）は同図（Ａ）ｋｌ−Ｉで切った断面図、同
図Ｃ）は同図（Ｂ）の８部分の拡大図、第６図、第４図
。
第５図、第６図１第７図はこの発明の−・実施例の十導
住ダイヤフワム全示す図であって第５図はその肛面図、
第４図←Ｌその１−面図、第５図は第６図をト」で切断
した断面図、第６図は第ろ図を■−■で切１θ「した断
面図、第７図は第４図の１）部分の拡大部を示す図であ
って５同図（Ａ）は同拡大図。
同図０３）は同郡の応力特性図２第８図は他の実施例を
示す半導体ダイ−■フブムの要部断面図である。」と補
正する。
以 １−Figure 1 is a side sectional view of a conventional flat semiconductor diaphragm, and Figure 2 is a diagram showing a conventional semiconductor diaphragm with a central rigid body. A cross-sectional view taken along I-I, the same figure (q is an enlarged view of part a of Fig. 2 (Bl), Fig. 6, Fig. 4, Fig. 5, Fig. 6, and Fig. 7 are 3 is a bottom view, FIG. 4 is a top view, FIG. 5 is a cross-sectional view of FIG. 5 taken along line 1-I, and FIG. Figure 3 is a cross-sectional view of main parts of the flam. 1: Semiconductor diaphragm body, 2: Peripheral fixing part, 3
- Central rigid body, 4: Groove portion, 5: Thin wall portion, 6S piezoresistive element, 7: Beam portion. (6) Figure 1, Figure 2, PiJ - Figure 9, Figure 4m, Figure 6, Figure 1, procedural amendment [self-motivated] November 13, 1971 [1, 1, 11, 1157, Patent Application No. 130793, 2 Name of the invention Semiconductor diaphragm 5 Ura-11 Relationship with the old case Patent applicant 11 people instead of 4 15 Target of amendment Column 6 for brief explanation of the drawings of Meikashi 1 Book Contents of amendment, 1 book ■
), Specification, page 6, 1-1 to 5 (]1
-1 to the 16th line [-Figure 1 shows the conventional \1
3, which is a cross-sectional view of the main part of the semiconductor diaphragm "y 11" in the f-handling shape.
Figure 2 is a side sectional view of the conventional central rigid body (showing the earth conductor diaphragm Ai), and Figure (A) is a side view of ID 1. A sectional view taken along the line kl-I, Figure C) is an enlarged view of 8 parts of Figure 6 and Figure 4. Figures 5, 6, and 7 are diagrams showing the whole ten-conductor housing diaphragm according to an embodiment of the present invention, and Figure 5 is an annular view thereof;
Figure 4 is a 1-plane view of ←L, Figure 5 is a sectional view of Figure 6 taken at ``G'', Figure 6 is a sectional view of Figure 6 taken by 1θ'', and Figure 7 is a sectional view of Figure 6 taken by FIG. 5 is an enlarged view of part 1) in FIG. 4. FIG. It is a cross-sectional view of the main part of the die-■ Fubum.'' Below 1-
Claims (1)
前記中心剛体間の裏面に設けられる溝ｔ４１９と。 との溝部にｚ１応′する表面位置の所宇ｆｊ’Ｒ所に形
成される圧力検出用ピエゾ抵抗素子とよりなる半導体ダ
・イヤソラトにおいて。 前記ピエゾ抵抗素ｒが形成される位置に対応する溝部に
、前記周辺固定部と中心剛体に連接され、前記溝部の底
部に対し段差を持つ肉厚のビーム部を設けたことを特徴
とする半導体ダイヤフラム。(1) Peripheral solid 5? a central rigid body, and a groove t419 provided on the back surface between the peripheral fixing part and the central rigid body. In a semiconductor diasolate comprising a piezoresistive element for pressure detection formed at a surface position fj'R corresponding to the groove part z1'. A semiconductor characterized in that a groove portion corresponding to the position where the piezoresistive element r is formed is provided with a thick beam portion that is connected to the peripheral fixing portion and the central rigid body and has a step with respect to the bottom of the groove portion. diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13079382A JPS5921074A (en) | 1982-07-27 | 1982-07-27 | Semiconductor diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13079382A JPS5921074A (en) | 1982-07-27 | 1982-07-27 | Semiconductor diaphragm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5921074A true JPS5921074A (en) | 1984-02-02 |
| JPS6337512B2 JPS6337512B2 (en) | 1988-07-26 |
Family
ID=15042819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13079382A Granted JPS5921074A (en) | 1982-07-27 | 1982-07-27 | Semiconductor diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5921074A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021029397A1 (en) | 2019-08-15 | 2021-02-18 | 東レ株式会社 | Separator for batteries and method for producing same |
| CN114303281A (en) | 2020-03-11 | 2022-04-08 | 东丽株式会社 | Battery separator |
-
1982
- 1982-07-27 JP JP13079382A patent/JPS5921074A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6337512B2 (en) | 1988-07-26 |
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