JPS59208794A - Photoelectric power generating element - Google Patents
Photoelectric power generating elementInfo
- Publication number
- JPS59208794A JPS59208794A JP58082976A JP8297683A JPS59208794A JP S59208794 A JPS59208794 A JP S59208794A JP 58082976 A JP58082976 A JP 58082976A JP 8297683 A JP8297683 A JP 8297683A JP S59208794 A JPS59208794 A JP S59208794A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal
- layer
- silicon layer
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 238000009713 electroplating Methods 0.000 claims abstract description 12
- 229920003023 plastic Polymers 0.000 claims abstract description 10
- 239000004033 plastic Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 2
- 238000009499 grossing Methods 0.000 abstract 7
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はプラダ？ ＣＶＤ （Ｃｈｅｍｉｃａｌ Ｖａ
ｐｏｒＤｅｐｏｓｉｔｉｏｎ）法によって基板に光電変
換機能を有するアモルファスシリコン層又は微結晶シリ
コン層を積層して製造する光発電素子に関するものであ
る。[Detailed Description of the Invention] (Industrial Application Field) Is the present invention Prada? CVD (Chemical Va.
The present invention relates to a photovoltaic device manufactured by laminating an amorphous silicon layer or a microcrystalline silicon layer having a photoelectric conversion function on a substrate using a porDeposition method.
（従来技術）
プラズマＣＶＤ法によシ製造される従来のアモルファス
太陽′亀池の如ぎ光発電素子１′は、例えば第１図に示
すように、ガラス基板２の表面に透明導電膜３を形成し
、その上にＰ層、１層、Ｎ層からなるアモルファスシリ
コン層４を形成し、その上に金属蒸着膜５を形成した構
造になっていて、ガラス基板２側から光を入射させるこ
とによシ発冨動作を行わせるようになっている。或は、
第２図に示すように、ステンレススチール等の金属板６
の表面にＮ層、１層、Ｐ層からなるアモルファスシリコ
ン層４を形成し、その上に透明導電膜３を形成した構造
になっていて、透明導％、膜３側から光を入射させるこ
とによシ発電動作を行わせるようになっている。(Prior Art) A conventional amorphous solar photovoltaic device 1' manufactured by the plasma CVD method has a transparent conductive film 3 formed on the surface of a glass substrate 2, as shown in FIG. 1, for example. Then, an amorphous silicon layer 4 consisting of a P layer, a 1 layer, and an N layer is formed on top of the amorphous silicon layer 4, and a metal vapor deposition film 5 is formed on top of the amorphous silicon layer 4, and light is allowed to enter from the glass substrate 2 side. It is designed to perform a positive action. Or,
As shown in FIG. 2, a metal plate 6 made of stainless steel, etc.
It has a structure in which an amorphous silicon layer 4 consisting of an N layer, a 1 layer, and a P layer is formed on the surface of the substrate, and a transparent conductive film 3 is formed thereon. It is designed to perform power generation operation.
しかしながら、第１図に示す如き構造の光発電素子１′
では、ガラス基板２を使用している関係で自重が比較的
大きく、複数枚並べて光発電ユニットを形成する場合に
は、取付枠及び補強制等の構造が犬がかシなものとなっ
て設備コストがかさむ欠点がある。However, the photovoltaic element 1' having the structure shown in FIG.
Since the glass substrate 2 is used, its own weight is relatively large, and when a photovoltaic power generation unit is formed by arranging multiple sheets, the structure of the mounting frame and auxiliary force becomes bulky, making it difficult to install the equipment. The disadvantage is that it is costly.
一方、第２図に示す如き構造の光発電素子１′では、ス
テンレススチール等の薄板の金属板６を使用することに
よシ軽量化でき且つ腐蝕を防止できるが、ステンレスス
チール等の金属板６０表面は粗面であるため、その表面
に直接アモルファスシリコン層４を均一に設けることか
できない。このため、従来は金属板６の表面を鏡面研磨
して平滑にしていたので、その加工コストが上昇し、光
発電素子１′が部側になる欠点かあった。On the other hand, in the photovoltaic element 1' having the structure shown in FIG. 2, the weight can be reduced and corrosion can be prevented by using a thin metal plate 6 such as stainless steel. Since the surface is rough, it is only possible to uniformly provide the amorphous silicon layer 4 directly on the surface. For this reason, conventionally, the surface of the metal plate 6 was mirror-polished to make it smooth, which increased the processing cost and had the disadvantage that the photovoltaic element 1' was placed on the side.
（発明の目的）
本発明の目的は、軽量で且つ強固で、しかも低コストで
製造できる光発電素子を提供するにある。(Objective of the Invention) An object of the present invention is to provide a photovoltaic device that is lightweight and strong, and can be manufactured at low cost.
（発明の構ｒｔｙ、 ＞
本発明に係る光発電素子は、金属１、プラスチック又ｄ
セラミックよりなる基板の表面に電気メッキよシなる金
属平滑面が設けられ、その土に先箱：変俣機能全有する
アモルファスシリコン層又は微結晶シリコン層が設けら
れていること全性徴とするものである。(Structure of the invention, > The photovoltaic element according to the present invention is made of metal 1, plastic or
The surface of the substrate made of ceramic is provided with a smooth metal surface such as electroplating, and the substrate is provided with an amorphous silicon layer or a microcrystalline silicon layer that has all the functions of the first box. be.
（実施例）
以下不発ψＪの実施例を図面を参照して詳細に説明する
。第３図は本発明の第１実施例を示したものである。図
示のように本実施例の光発電素子１は、ステンレススチ
ールからなる薄肉の金属基板６を備え、その表面にはニ
ッケル、クローム・金１ステンレス等のアモルファスシ
リコン層４１）形成に効果的な金属の電気メッキによ多
金属平滑面７が形成されている。この金属平滑面７は、
電気メッキによるだめ、ステンレススチールよｐなる金
属基板６の粗面を所定の厚さで一様に螺うことができ、
金属基板６の表面を顕微鏡で観察した場合に見られる尖
った部分を包み込んで金属基板６の表面を渭らかにする
ことができる。この金属平滑面７の表面にはＮ層、１層
、ＰＭから々るアモルファスシリコン層４が設けられて
いる。アモルファスシリコン層４は周知のＣＶＤグロー
放電によ膜形成されるが、金属基板６の表面か電気メッ
キによる金属平滑面７で覆われているので、金属基板６
の表面には酸素や炭酸ガス等のガスが吸着しにくくなシ
、この電気メッキからなる金属平滑面７にアモルファス
シリコン層４を形成する場合に僅かに吸着しているガス
は簡単に除去することができ、円滑にアモルファスシリ
コン層４を形成することができる。また、このアモルフ
ァスシリコンＷｔ ４１ｄ、金属平滑ｍ」７の形刃に形
成するため、その馬′さを均一にすることができる。ア
モルファスシリコン）曽４の表面には透明導電膜３が形
成されている。(Example) Hereinafter, an example of misfire ψJ will be described in detail with reference to the drawings. FIG. 3 shows a first embodiment of the present invention. As shown in the figure, the photovoltaic device 1 of this embodiment includes a thin metal substrate 6 made of stainless steel, and the surface thereof is coated with a metal effective for forming an amorphous silicon layer 41) such as nickel, chromium/gold 1 stainless steel, etc. A multimetallic smooth surface 7 is formed by electroplating. This metal smooth surface 7 is
It is possible to uniformly screw the rough surface of the metal substrate 6 made of stainless steel or the like with a predetermined thickness by electroplating,
The surface of the metal substrate 6 can be made smooth by wrapping around the sharp parts that are seen when the surface of the metal substrate 6 is observed under a microscope. On the surface of this metal smooth surface 7, an amorphous silicon layer 4 consisting of an N layer, a 1 layer, and a PM layer is provided. The amorphous silicon layer 4 is formed by a well-known CVD glow discharge, but since the surface of the metal substrate 6 is covered with a smooth metal surface 7 formed by electroplating, the metal substrate 6
It is difficult for gases such as oxygen and carbon dioxide to be adsorbed on the surface of the amorphous silicon layer 4, and when forming the amorphous silicon layer 4 on the electroplated metal smooth surface 7, it is necessary to easily remove the slightly adsorbed gas. Thus, the amorphous silicon layer 4 can be smoothly formed. In addition, since this amorphous silicon Wt 41d is formed into a metal smooth m''7 shaped blade, its sharpness can be made uniform. A transparent conductive film 3 is formed on the surface of the amorphous silicon layer 4.
第４図は本発明の第２実施例を示したものである。図示
のように本実施例の光発電素子１は、導′１１カ性グラ
スチック成型板からなる導電性グラスチック基板８を侃
■え、その表面には前述したようガ金ル」；の′電気メ
ッキによる金属平滑面７が設けられ、その上にＮＷ！、
Ｉ層、Ｐ層からなるアモルファスシリコン層４が設けら
れ、その上に透明導電膜３が設けられた構造とガってい
る。FIG. 4 shows a second embodiment of the invention. As shown in the figure, the photovoltaic device 1 of this embodiment has a conductive glass substrate 8 made of a conductive glass molded plate, and the surface thereof has a metal plate as described above. A metal smooth surface 7 is provided by electroplating, and NW! ,
The structure is different from that in which an amorphous silicon layer 4 consisting of an I layer and a P layer is provided, and a transparent conductive film 3 is provided thereon.
第５図は本発明の第３実施例を示したものである。図示
のように本実施例の先発％、累子１は、非導′市性シラ
スチック又は薄肉のセラミックよりなる基板９の上に電
気メッキによる金属平滑面７が設けられ、その上にＮ層
、１層、Ｐ層からなるアモルファスシリコン層４が設け
られ、その上に透明導電膜３が設けられた構造になって
いる。FIG. 5 shows a third embodiment of the present invention. As shown in the figure, the starter 1 of this embodiment has a smooth metal surface 7 formed by electroplating on a substrate 9 made of non-conducting plastic or thin ceramic, and an N layer on top of the substrate 9. , one layer, and a P layer are provided, and a transparent conductive film 3 is provided thereon.
なお、金属平滑面７は基板６，８．９の表面に一旦蒸着
によ多金属薄膜を形成した後、金属の電気メッキを施し
て形成することもできる。Note that the metal smooth surface 7 can also be formed by once forming a multi-metal thin film on the surface of the substrates 6, 8, 9 by vapor deposition, and then electroplating the metal.
第６図は本発明の光発電素子１を用いた光発電ユニット
１０の一例を示したものである。この光発電ユニット１
０は、格子状に区画された硬質プラスチックからなる略
正方形状のフレーム１１０片面の格子状に区画された各
部分に電気メッキを施して本発明の光発電素子１を形成
したものである。このフレーム１１の外周には取付枠゛
１２が一体に設けられ、この取付枠１２の四隅には取付
孔１３ａを有する取付脚１３が設けられた構造になって
いる。このようにプラスチック拐を用いると、フレーム
１１や取付枠１２は、プラスチックの成型によシ簡単に
作ることができ、そのフレーム１１に光発電素子１′ｆ
！：直接一体重に形成し得て、組立不要で、軽量となシ
、持運びが容易となる〇なお、上記実施例では、金属基
板６としてステンレススチールを用いた場合について示
したが、本発明ではこの基板６０表面に金属平滑面７を
設けるの−〇、針板やアルミニウム板等の市販されてい
るＺ（１佃なくミ属板でも使用することができる。FIG. 6 shows an example of a photovoltaic unit 10 using the photovoltaic element 1 of the present invention. This photovoltaic unit 1
No. 0 is a photovoltaic device 1 of the present invention formed by electroplating each grid-shaped portion of one side of a substantially square frame 110 made of hard plastic partitioned into a grid. A mounting frame 12 is integrally provided on the outer periphery of the frame 11, and mounting legs 13 having mounting holes 13a are provided at the four corners of the mounting frame 12. When plastic material is used in this way, the frame 11 and the mounting frame 12 can be easily made by molding the plastic, and the photovoltaic element 1'f can be attached to the frame 11.
! : Can be directly formed into one piece, does not require assembly, is lightweight, and is easy to carry. In the above embodiment, stainless steel is used as the metal substrate 6, but the present invention Now, a metal smooth surface 7 is provided on the surface of this substrate 60.A commercially available Z (metallic plate) such as a needle plate or an aluminum plate can also be used.
）だ、＜ｔ＝ ）ｒＪ’ｊｈ平滑面７に形成させる光電
変換機能をイｊする薄膜層は、アモルファスシリコン層
４に限定されることなく、光透過性の良い微結晶シリコ
ンハ〈でもよい。), <t= )rJ'jh The thin film layer formed on the smooth surface 7 and having a photoelectric conversion function is not limited to the amorphous silicon layer 4, but may be microcrystalline silicon with good light transmittance.
（発明の効果）
以上詣、明したように本発明に係る光発電素子は、基板
の表面に′山；気メッキによる金属平滑面を設け、その
上に光・１Ｇ変換機能を有するアモルファスシリコン層
又は微結晶シリコン層を設けているので、基板の表面の
粗さに関係なく均一な厚さのアモルファスシリコン層又
は微結晶シリコン層を形成することができる。また、金
属平滑面を設けておくと、その表面には不用なガスの吸
着がなぐなシ、良狼のアモルファスシリコン層又は微結
晶シリコン融食形成でき、光電変換特性の良い光発電素
子を提供づるととかできる。更に、本発明によれば、基
板表面の鏡面仙磨加工が必要なく、加工工数を大ＩＱｔ
Ｉに低減でき、コストダウンを図ることができる。かつ
また、本発明によれは、プラスチック製の基板や薄肉の
金属又はセラミック製基板を使用でき、基板の重量及び
コストを大幅に低減でき、腐蝕の虞れもなく好適である
。従って、本発明によれは、光電変換特性が良く、＠量
で、安価で・長寿命の光発電素子を提供することができ
る。(Effects of the Invention) As explained above, the photovoltaic device according to the present invention has a smooth metal surface formed by air plating on the surface of the substrate, and an amorphous silicon layer having a light/1G conversion function on the surface of the substrate. Alternatively, since a microcrystalline silicon layer is provided, an amorphous silicon layer or a microcrystalline silicon layer with a uniform thickness can be formed regardless of the roughness of the surface of the substrate. In addition, by providing a smooth metal surface, the adsorption of unnecessary gases is prevented on the surface, and a good amorphous silicon layer or microcrystalline silicon melting layer can be formed, providing a photovoltaic element with good photoelectric conversion characteristics. You can do things like zuruto. Furthermore, according to the present invention, there is no need for mirror polishing of the substrate surface, and the number of processing steps can be reduced by a large IQt.
I, and it is possible to reduce costs. Furthermore, according to the present invention, a plastic substrate or a thin metal or ceramic substrate can be used, and the weight and cost of the substrate can be significantly reduced, and there is no risk of corrosion. Therefore, according to the present invention, it is possible to provide a photovoltaic element with good photoelectric conversion characteristics, low cost, and long life.
第１図及び第２図は従来の光発電素子の２釉の例を示す
縦断面図、第３図乃至第５図は本発明に係る光発電素子
の３種の例を示す縦断面［ン！、第６図は本発明の光発
電素子を用いた光発ちユニットの一例を示ず背面（ｆｉ
ｌｌの余１視ヒ１でちる。
１・・−光発電素子、３・・・透明導電膜、４・・・ア
モルファスシリコン層、６・・・今風基板、７・・・全
屈平滑面、８・・・導電性プラスチック基板、９・・・
非情電性プラスチック又はセラミ、りよシなる基板。1 and 2 are vertical cross-sectional views showing two examples of conventional photovoltaic devices, and FIGS. 3 to 5 are vertical cross-sectional views showing three examples of photovoltaic devices according to the present invention. ! , FIG. 6 does not show an example of a light emitting unit using the photovoltaic element of the present invention, but only the rear surface (fi
The remainder of ll is 1 and 1 is left. DESCRIPTION OF SYMBOLS 1...-Photovoltaic element, 3... Transparent conductive film, 4... Amorphous silicon layer, 6... Modern substrate, 7... Full bending smooth surface, 8... Conductive plastic substrate, 9 ...
Non-electronic plastic or ceramic, a better substrate.
Claims (1)
に電気メッキよシなる金属平滑面が設けられ、この金總
平滑面の上に光電変換機能を有するアモルファスシリコ
ン層又は微結晶シリコン層が設けられていることを特徴
とする光発電素子。A smooth metal surface made by electroplating is provided on the surface of a substrate made of metal, plastic, or ceramic, and an amorphous silicon layer or a microcrystalline silicon layer having a photoelectric conversion function is provided on this smooth metal surface. A photovoltaic element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58082976A JPS59208794A (en) | 1983-05-12 | 1983-05-12 | Photoelectric power generating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58082976A JPS59208794A (en) | 1983-05-12 | 1983-05-12 | Photoelectric power generating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208794A true JPS59208794A (en) | 1984-11-27 |
| JPH0473307B2 JPH0473307B2 (en) | 1992-11-20 |
Family
ID=13789242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58082976A Granted JPS59208794A (en) | 1983-05-12 | 1983-05-12 | Photoelectric power generating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208794A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955012A (en) * | 1982-09-24 | 1984-03-29 | Mitsubishi Chem Ind Ltd | Amorphus silicon semiconductor substrate |
-
1983
- 1983-05-12 JP JP58082976A patent/JPS59208794A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955012A (en) * | 1982-09-24 | 1984-03-29 | Mitsubishi Chem Ind Ltd | Amorphus silicon semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473307B2 (en) | 1992-11-20 |
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